CN109888027A - Back electrode, solar battery and preparation method thereof - Google Patents
Back electrode, solar battery and preparation method thereof Download PDFInfo
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- CN109888027A CN109888027A CN201910048917.1A CN201910048917A CN109888027A CN 109888027 A CN109888027 A CN 109888027A CN 201910048917 A CN201910048917 A CN 201910048917A CN 109888027 A CN109888027 A CN 109888027A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 47
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 42
- 238000000034 method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 230000008569 process Effects 0.000 claims abstract description 15
- 238000004140 cleaning Methods 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 19
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 19
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000004528 spin coating Methods 0.000 claims description 6
- 238000005192 partition Methods 0.000 claims description 5
- 238000005507 spraying Methods 0.000 claims description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000010248 power generation Methods 0.000 abstract description 4
- 230000011218 segmentation Effects 0.000 abstract description 3
- 238000006467 substitution reaction Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 13
- 239000000243 solution Substances 0.000 description 12
- 239000010408 film Substances 0.000 description 10
- 238000006748 scratching Methods 0.000 description 6
- 230000002393 scratching effect Effects 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 210000003850 cellular structure Anatomy 0.000 description 2
- 239000003292 glue Substances 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 description 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Photovoltaic Devices (AREA)
Abstract
A kind of back electrode, solar battery and preparation method thereof, the preparation method of the back electrode of solar cell includes the following steps: to prepare photoresist layer in substrate, and prepares on photoresist layer a plurality of through photoresist layer thickness and spaced apart first delineation area；Insulating layer is prepared on the surface of substrate and photoresist layer；Non-metallic layer is prepared on the insulating layer；It is removed using cleaning process insulating layer by photoresist layer and thereon and non-metallic layer；Back electrode layer is prepared on substrate and non-metallic layer；The back electrode layer on non-metallic layer and non-metallic layer is removed using cleaning process, forms back electrode.The segmentation that back electrode is completed using photoetching technique substitution laser grooving and scribing, avoids damage of the laser grooving and scribing to substrate；Dielectric filling is carried out in first delineation area (P1) score line simultaneously, the area in dead zone is reduced, increases the area of power generation area, improve generating efficiency.
Description
Technical field
The present invention relates to photovoltaic technology field, the preparation method of specifically a kind of back electrode of solar cell and pass through this side
The back electrode of method preparation and the preparation method of solar battery and the solar battery prepared by the method.
Background technique
It is usually all the back using metal molybdenum as battery in existing copper-indium-galliun-selenium film solar cell preparation process
Electrode.In order to realize the power output of copper indium gallium selenide cell component high voltage, low current, the side of laser or mechanical scratching is introduced
Formula cuts back electrode, preceding electrode and other functional film layers, entire battery is divided into multiple sub- battery units, simultaneously
There is series connection and parallel relationship between sub- battery.
Laser or mechanical scratching are to be realized in a manner of removing corresponding film layer, therefore necessarily will cause score line region
And the region between score line lacks necessary film layer structure, causes the region to cannot achieve photoelectric conversion, becomes battery
" dead zone " so-called in structure.
It for ease of description, will be in copper-indium-galliun-selenium film solar cell preparation process according to the introducing sequence of delineation
Scoring procedure be divided into the first delineation area (P1), second delineation area (P2) and third delineate area (P3) (some technology paths there are also P4,
More scribing process such as P5).In order to avoid short circuit caused by score line or breaking problem, the first delineation area (P1), the second delineation
Need to exist between area (P2) and third delineation area (P3) score line it is certain it is interregional every.
As shown in Figure 1, being usually all to delineate area (P1) first in current copper-indium-galliun-selenium film solar cell structure
After delineation, directly progress CIGS thin-film preparation, i.e. CIGS thin-film can be filled into the delineation of the first delineation area (P1)
Line first is delineated in area, and " insulation " medium of the first delineation area (P1) score line two sides is served as.
In existing copper-indium-galliun-selenium film solar cell technology of preparing, the first quarter of molybdenum back electrode layer is completed using laser
After partition (P1) delineation, CuInGaSe absorbed layer is directly prepared on substrate, utilizes the first delineation area (P1) of copper indium gallium selenide filling
The first delineation area that score line is formed.Since the thickness of molybdenum back electrode layer is usually 300~500nm, CuInGaSe absorbed layer
Thickness is at 2 μm or so, therefore copper indium gallium selenide may be implemented preferably to fill, so that copper indium gallium selenide acts as the first delineation area (P1)
" dielectric " of score line.It is mechanical since the second delineation area (P2), third delineation area (P3) delineation generally use mechanical scratching
Score line is easy to that copper indium gallium selenide film layer edge is caused to generate chipping phenomenon.Therefore, the first delineation area (P1), the second delineation area
(P2) it needs to keep certain interval between third delineation area (P3), is just avoided that short circuit or breaking problem occurs in battery,
It just can guarantee that battery just produces work.
The considerations of being limited to limitation and the cost control faces of prior art technical level, the width and precision of mechanical scratching
It can only be maintained at certain level, cannot achieve significantly improve in a short time.Laser scribing process to the translucency of substrate, swash
Light type, laser energy etc. have very high requirement, it is also difficult to realize and effectively be promoted, and laser grooving and scribing can make film layer and substrate
At certain damage.
Dead zone area is reduced, improving effective photoelectric conversion area is to promote the conversion of copper-indium-galliun-selenium film solar cell component
One key factor of efficiency, and the width by reducing laser and mechanical scratching line, promote precision and reduce dead zone area, short
It is difficult to obtain remarkable progress in time.
Summary of the invention
The object of the present invention is to provide a kind of preparation methods of back electrode of solar cell that generating efficiency is high.
To solve the above problems, the present invention provides a kind of preparation methods of back electrode of solar cell, including walk as follows
It is rapid:
S11, photoresist layer is prepared in substrate, and prepared on the photoresist layer a plurality of through the photoresist thickness
Degree and spaced apart first delineation area；
S12, insulating layer is prepared on the surface of the substrate and the photoresist layer；
S13, non-metallic layer is prepared on the insulating layer；
S14, it is removed using the cleaning process insulating layer by the photoresist layer and thereon and the non-metallic layer；
S15, back electrode layer is prepared on the substrate and the non-metallic layer；
S16, the back electrode layer on the non-metallic layer and the non-metallic layer is removed using cleaning process, shape
At the multiple back electrodes separated by the insulating layer in first delineation area.
Based on the above technical solution, the present invention can also be improved as follows.
Further, it is described prepared on photoresist layer it is a plurality of through the photoresist layer thickness and spaced apart the
A moment partition step includes:
S111, setting has the mask plate of a plurality of seam on the photoresist；
S112, the first delineation area is formed by the way of exposure, development.
Further, it is characterised in that: the insulating layer is prepared using sputtering, spraying or spin coating.
Further, the thickness of the back electrode layer is identical as the thickness of the insulating layer.
Further, the back electrode layer and the insulating layer with a thickness of 300~500nm.
The present invention also provides a kind of back electrode of solar cell, using the solar energy as described in any of the above-described technical solution
The preparation method of battery back electrode is prepared.
The present invention also provides a kind of preparation method of solar battery,
S21, solar energy is prepared using the preparation method of the back electrode of solar cell as described in any of the above-described technical solution
Back electrode；
S22, absorbed layer is prepared on the back electrode；
S23, cadmium sulfide layer is prepared on the absorbed layer；
S24, the second delineation of delineation formation area is carried out on the absorbed layer and the cadmium sulfide layer, described second is delineated
The absorbed layer of area region and the cadmium sulfide layer remove, and second delineation area is parallel to first delineation area；
S25, preceding electrode layer is prepared on the cadmium sulfide layer, the insulating layer and the back electrode layer；
S26, carried out on the absorbed layer, the cadmium sulfide layer and the preceding electrode layer delineation formed third delineation area,
The absorbed layer of third delineation area region, the cadmium sulfide layer and the preceding electrode layer are removed, the third
Delineation area is parallel to the first delineation area.
Based on the above technical solution, the present invention can also be improved as follows.
Further, the absorbed layer is prepared using coevaporation method, sputtering selenizing method or spraying process.
Further, using laser or mechanical scratching the processing first delineation area and/or second delineation area.
The present invention also provides a kind of solar batteries, using the system of the solar battery as described in any of the above-described technical solution
Preparation Method is prepared.
The beneficial effects of the present invention are: completing the segmentation of back electrode using photoetching technique substitution laser grooving and scribing, laser is avoided
The damage to substrate is delineated, limitation of the laser scribing process to delineation line width is avoided；It is carried out in the first delineation area simultaneously exhausted
Edge media filler keeps the insulating layer in the first delineation area be overlapped with the second delineation area, and then reduces the area in dead zone, increases
The area of power generation area improves generating efficiency.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of solar battery involved in background technique in the present invention；
Fig. 2 is the preparation flow figure of back electrode of solar cell in the present invention；
Fig. 3 is to delineate the flow chart in area in preparation first in the present invention；
Fig. 4 is preparation method step S11 counter structure figure provided in an embodiment of the present invention；
Fig. 5 is preparation method step S12 counter structure figure provided in an embodiment of the present invention；
Fig. 6 is preparation method step S13 counter structure figure provided in an embodiment of the present invention；
Fig. 7 is preparation method step S14 counter structure figure provided in an embodiment of the present invention；
Fig. 8 is preparation method step S15 counter structure figure provided in an embodiment of the present invention；
Fig. 9 is preparation method step S16 counter structure figure provided in an embodiment of the present invention；
Figure 10 is the preparation flow figure of solar battery in the present invention.
Figure 11 is the structural schematic diagram of solar battery in the present invention.
Appended drawing reference:
1, substrate, 2, photoresist layer, 3, insulating layer, 4, non-metallic layer, 5, back electrode layer, 6, absorbed layer, 7, cadmium sulfide layer,
8, preceding electrode layer.
Specific embodiment
In order to make the objectives, technical solutions and advantages of the present invention clearer, With reference to embodiment and join
According to attached drawing, the present invention is described in more detail.It should be understood that these descriptions are merely illustrative, and it is not intended to limit this hair
Bright range.In addition, in the following description, descriptions of well-known structures and technologies are omitted, to avoid this is unnecessarily obscured
The concept of invention.
First embodiment
Fig. 2 is the preparation flow figure of back electrode of solar cell in the present invention.As shown in Fig. 2, solar battery of the present invention
The preparation method of back electrode, includes the following steps:
S11, photoresist layer 2 is prepared in substrate 1, and prepared on photoresist layer 2 a plurality of thick through the photoresist layer 2
Degree and spaced apart first delineation area.Specifically, a plurality of first delineation area is in array distribution.
As shown in figure 3, the specific method is as follows in the first delineation of preparation area on photoresist layer 2:
S111, setting has the mask plate of a plurality of seam on a photoresist；
S112, the first delineation area is formed by the way of exposure, development, obtains the structure such as Fig. 4.
Specifically, photoresist can be selected on ultraviolet photoresist.First on substrate 1 spin coating or printing one layer of ultraviolet photolithographic
Glue 2 (positive photoresist), then overlays on mask plate on ultraviolet photoresist；It is provided with a plurality of spaced seam on mask plate, a plurality of
It is arranged in array every the seam of setting；Then it is exposed using ultraviolet source, recycles developer solution (common as potassium hydroxide is molten
Liquid etc.) and fixing solution (common such as water) developed and be fixed respectively, be removed the photoresist stitched on corresponding substrate,
Form the first delineation area.
Can also on substrate 1 spin coating or printing one layer of ultraviolet photoresist 2 (negtive photoresist), mask plate is then overlayed on into ultraviolet light
In photoresist；A plurality of spaced seam is provided on mask plate, a plurality of spaced seam is arranged in array；Then using ultraviolet
Light source is exposed, recycle developer solution (common such as potassium hydroxide solution) and fixing solution (common such as water) respectively into
Row development and fixing, are removed the photoresist on the corresponding substrate of mask plate, form the first delineation area.
For guarantee exposure quality, mask plate should as far as possible with ultraviolet photolithographic glue laminating.Ultraviolet photoresist with a thickness of 2~5 μm,
Specifically, can be 2 μm, 3 μm, 4 μm or 5 μm.
S12, insulating layer 3 is prepared on the surface of the substrate 1 and the photoresist layer 2, obtains the structure such as Fig. 5.Tool
Body, be the one floor dielectric of bottom aggradation in photoresist layer 2 and the first delineation area, such as SiO2.Insulating layer 3 with a thickness of
300~500nm；Specifically, can be 300nm, 350nm, 400nm or 500nm
Specifically, insulating layer 3 can be prepared using vacuum magnetic-control sputtering method, spraying or spin coating.
Dielectric can also select SiNx, Al2O3Or other insulating materials.
S13, non-metallic layer 4 is prepared on the insulating layer 3, obtains the structure such as Fig. 6.Specifically, using evaporation etc.
Mode prepares one layer of non-metallic layer 4 insoluble in photoresist cleaning solution on the insulating layer 3, and 2-5 μm of thicknesses of layers.
S14, it is removed using the cleaning process insulating layer 3 by the photoresist layer 2 and thereon and the non-metallic layer 4
It goes.Obtain the structure such as Fig. 7.Specifically, ultraviolet photolithographic glue-line is removed using cleaning process.(such as using photoresist cleaning solution
Polar organic solvent etc.), it is removed by cleaning way insulating layer 3 by photoresist mask and above and non-metallic layer 4.
S15, back electrode layer 5 is prepared on the substrate 1 and the non-metallic layer 4.Obtain the structure such as Fig. 8.Specifically may be used
To use vacuum magnetic-control sputtering method, in preparation process, 0.1~1.0Pa of sputtering pressure；The back electrode layer 5 of preparation is with a thickness of 300-
500nm is consistent with 3 thickness of insulating layer.
S16, the back electrode layer 5 on the non-metallic layer 4 and the non-metallic layer 4 is removed using cleaning process.Tool
Body, using corresponding acid or alkaline solution by insulating layer non-metallic layer 4 and back electrode layer 5 remove, obtain such as Fig. 9
Structure.
The above method realizes the segmentation that back electrode is completed using photoetching technique substitution laser grooving and scribing, avoids laser grooving and scribing to base
The damage of plate avoids limitation of the laser scribing process to delineation line width；The setting of insulating layer makes in the first delineation area simultaneously
Insulating layer can be overlapped with the second delineation area, and then reduces the area in dead zone, increases the area of power generation area, improves generating efficiency.
In a preferred embodiment, back electrode layer 5 is molybdenum layer.
Second embodiment
Fig. 9 is preparation method step S16 counter structure figure provided in an embodiment of the present invention, that is, solar battery back electricity
The structural schematic diagram of pole.
A kind of back electrode of solar cell, using the preparation method of back electrode of solar cell as described in the first embodiment
It is prepared.
Third embodiment
Figure 10 is the preparation flow figure of solar battery in the present invention, as shown in Figure 10, the system of solar battery of the present invention
Preparation Method, comprising the following steps:
S21, solar energy back electrode is prepared using method as described in the first embodiment.
S22, absorbed layer 6 is prepared on the back electrode.Specifically, being prepared on above-mentioned back electrode using coevaporation method
CuInGaSe absorbed layer.
CuInGaSe absorbed layer can also utilize the preparation of the methods of sputtering selenizing method, spin coating.
Copper indium selenide, copper gallium selenium can also be selected to prepare absorbed layer.
S23, cadmium sulfide layer 7 is prepared on the absorbed layer 6；Vulcanize specifically, being prepared using chemical thought method
Cadmium layer 7.It can also be prepared by vacuum sputtering or other methods.
S24, the second delineation of delineation formation area is carried out on the absorbed layer 6 and the cadmium sulfide layer 7, by second quarter
The absorbed layer 6 and the cadmium sulfide layer 7 of partition region remove, and second delineation area is parallel to first delineation
Area.First delineation area can be processed using laser grooving and scribing.
S25, preceding electrode layer 8 is prepared on the cadmium sulfide layer 7, the insulating layer 3 and the back electrode layer 5.
S26, carried out on the absorbed layer 6, the cadmium sulfide layer 7 and the preceding electrode layer 8 delineation formed third delineation
Area removes the absorbed layer 6, the cadmium sulfide layer 7 and the preceding electrode layer 8 of third delineation area region, institute
It states third delineation area and is parallel to the first delineation area.Second delineation area can be processed using laser grooving and scribing, obtain solar battery, such as
The structure of Figure 11.
Based on the solar energy back electrode of first embodiment preparation, the first delineation area can be closer apart from insulating layer
It carries out delineating at position.If the first delineation area can precision under strict control the state of the art, the first score line is very
It is overlapping that part can be extremely generated with insulating layer, reduced dead zone area, increased power generation area area, and not will lead to battery and go out
Existing short circuit problem.
4th embodiment
Figure 11 is the structural schematic diagram of solar battery in the present invention.
A kind of solar battery is prepared using the preparation method of the solar battery as described in third embodiment.
It should be understood that above-mentioned specific embodiment of the invention is used only for exemplary illustration or explains of the invention
Principle, but not to limit the present invention.Therefore, that is done without departing from the spirit and scope of the present invention is any
Modification, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.In addition, appended claims purport of the present invention
Covering the whole variations fallen into attached claim scope and boundary or this range and the equivalent form on boundary and is repairing
Change example.
Claims (10)
1. a kind of preparation method of back electrode of solar cell, which comprises the steps of:
S11, photoresist layer (2) are prepared on substrate (1), and prepare on the photoresist layer (2) a plurality of through the photoetching
Glue-line (2) thickness and spaced apart first delineation area；
S12, insulating layer (3) is prepared on the surface of the substrate (1) and the photoresist layer (2)；
S13, non-metallic layer (4) are prepared on the insulating layer (3)；
S14, the insulating layer (3) and the non-metallic layer (4) using cleaning process by the photoresist layer (2) and thereon
It removes；
S15, back electrode layer (5) are prepared on the substrate (1) and the non-metallic layer (4)；
S16, the back electrode layer (5) on the non-metallic layer (4) and the non-metallic layer (4) is removed using cleaning process
It goes, forms the multiple back electrodes separated by the insulating layer (3) in first delineation area.
2. the preparation method of back electrode of solar cell as described in claim 1, it is characterised in that: described in photoresist layer
(2) prepared on it is a plurality of through the photoresist layer (2) thickness and it is spaced apart first delineation area's step include:
S111, setting has the mask plate of a plurality of seam on the photoresist layer (2)；
S112, the first delineation area is formed by the way of exposure, development.
3. the preparation method of back electrode of solar cell as described in claim 1, it is characterised in that: it is characterized by: using
Vacuum magnetic-control sputtering method, spraying or spin coating prepare the insulating layer (3).
4. the preparation method of back electrode of solar cell as described in claim 1, it is characterised in that: the back electrode layer (5)
Thickness it is identical as the thickness of the insulating layer (3).
5. the preparation method of back electrode of solar cell as claimed in claim 4, it is characterised in that: the back electrode layer (5)
With the insulating layer (3) with a thickness of 300~500nm.
6. a kind of back electrode of solar cell, which is characterized in that using the solar battery as described in any one of claim 1 to 5
The preparation method of back electrode is prepared.
7. a kind of preparation method of solar battery, which is characterized in that
S21, solar energy back electrode is prepared using method as described in any one of claims 1 to 3；
S22, absorbed layer (6) are prepared on the back electrode；
S23, cadmium sulfide layer (7) are prepared on the absorbed layer (6)；
S24, the second delineation of delineation formation area is carried out on the absorbed layer (6) and the cadmium sulfide layer (7), by second quarter
The absorbed layer (6) and the cadmium sulfide layer (7) of partition region remove, and second delineation area is parallel to described first
Delineate area；
S25, preceding electrode layer (8) is prepared on the cadmium sulfide layer (7), the insulating layer (3) and the back electrode layer (5)；
S26, carried out on the absorbed layer (6), the cadmium sulfide layer (7) and the preceding electrode layer (8) delineation formed third quarter
Partition, by the absorbed layer (6), the cadmium sulfide layer (7) and the preceding electrode layer (8) of third delineation area region
It removes, third delineation area is parallel to first delineation area.
8. the preparation method of back electrode of solar cell as claimed in claim 7, it is characterised in that: using coevaporation method, splash
Selenizing method or spraying process are penetrated to prepare the absorbed layer (6).
9. the preparation method of back electrode of solar cell as claimed in claim 7, it is characterised in that: using laser or mechanical quarter
It draws the processing second delineation area and/or the third delineates area.
10. a kind of solar battery, which is characterized in that using the preparation of the solar battery as described in any one of claim 7 to 9
Method is prepared.
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| CN201910048917.1A CN109888027A (en) | 2019-01-18 | 2019-01-18 | Back electrode, solar battery and preparation method thereof |
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| CN201910048917.1A CN109888027A (en) | 2019-01-18 | 2019-01-18 | Back electrode, solar battery and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111900219A (en) * | 2020-07-10 | 2020-11-06 | 唐山科莱鼎光电科技有限公司 | Method for preparing first reticle and third reticle of thin film solar cell |
| CN112635600A (en) * | 2020-12-22 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | Conductive backboard, manufacturing method thereof and back contact photovoltaic module |
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| US20120048333A1 (en) * | 2010-08-30 | 2012-03-01 | Karpenko Oleh P | Photovoltaic device interconnect |
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| CN112635600A (en) * | 2020-12-22 | 2021-04-09 | 泰州隆基乐叶光伏科技有限公司 | Conductive backboard, manufacturing method thereof and back contact photovoltaic module |
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