CN105140310B - A kind of light-transmission type copper indium gallium selenide cell component preparation technology - Google Patents
A kind of light-transmission type copper indium gallium selenide cell component preparation technology Download PDFInfo
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- CN105140310B CN105140310B CN201510370358.8A CN201510370358A CN105140310B CN 105140310 B CN105140310 B CN 105140310B CN 201510370358 A CN201510370358 A CN 201510370358A CN 105140310 B CN105140310 B CN 105140310B
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- 238000005516 engineering process Methods 0.000 title claims abstract description 21
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 210000003850 cellular structure Anatomy 0.000 title claims abstract description 18
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910052733 gallium Inorganic materials 0.000 title claims abstract description 18
- 238000002360 preparation method Methods 0.000 title claims abstract description 18
- 230000031700 light absorption Effects 0.000 claims abstract description 41
- 239000010409 thin film Substances 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 8
- 238000007747 plating Methods 0.000 claims abstract description 8
- 239000000758 substrate Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 8
- 239000008367 deionised water Substances 0.000 claims description 7
- 229910021641 deionized water Inorganic materials 0.000 claims description 7
- 239000010408 film Substances 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- 238000003475 lamination Methods 0.000 claims description 5
- 229920000298 Cellophane Polymers 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- 239000004411 aluminium Substances 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 239000008393 encapsulating agent Substances 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 239000012459 cleaning agent Substances 0.000 claims description 3
- 238000001816 cooling Methods 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000010030 laminating Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 abstract description 11
- 238000012545 processing Methods 0.000 abstract description 6
- 210000004027 cell Anatomy 0.000 abstract description 3
- 230000005611 electricity Effects 0.000 description 7
- 229910052980 cadmium sulfide Inorganic materials 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000009738 saturating Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 1
- 238000007596 consolidation process Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000007634 remodeling Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
A kind of light-transmission type copper indium gallium selenide cell component preparation technology, belongs to solar cell processing technique field.In hearth electrode（200）Upper delineation printing opacity groove（5）, printing opacity groove（5）The hearth electrode of both sides（200）For the first hearth electrode（201）With the second hearth electrode（202）；In hearth electrode（200）Upper plating light-absorption layer（300）；In light-absorption layer（300）Upper delineation series connection groove（6）；In light-absorption layer（300）Upper plating Top electrode（500）, printing opacity groove（5）With series connection groove（6）Make Top electrode（500）With the first hearth electrode（201）Connection, while making Top electrode（500）With the second hearth electrode（202）Disconnect；In the first hearth electrode（201）The Top electrode of upside（500）Upper delineation insulated trench（7）.The Top electrode series connection hearth electrode formed at the middle part of battery thin film in transmission region, and transmission region, can also connect into battery thin film while printing opacity one entirety.
Description
Technical field
A kind of light-transmission type copper indium gallium selenide cell component preparation technology, belongs to solar cell processing technique field.
Background technology
With increasingly sharpening for problem of environmental pollution, the development of clean energy resource has obtained people and more and more paid close attention to.Light
The combination of volt and building is a new direction of solar energy development, and the preparation of building integrated photovoltaic component is current photovoltaic manufacture
The new competition spot in field.In the long run, BIPV has boundless market prospects, but light-transmitting component is saturating
The structure design of light groove is a key factor for restricting the reduction of its process costs at present.Current light-transmitting component is in routine
It is further processed on the basis of impermeable optical assembly, battery layers is etched away to the euphotic zone to be formed completely.Referring in particular to attached
Fig. 1, the processing technology of existing light-transmitting component is to process multiple row battery thin film 2 on substrate 1 first, adjacent battery thin film 2
Turned on by connection member, adjacent battery thin film 2 is spaced very small, it is impossible to printing opacity, in order to realize printing opacity, utilizes laser ablation
Method etch multiple transmission regions 3 at the middle part of battery thin film 2, be so by 2 points of the battery thin film of original permutation just
Battery grid one by one, the both sides of substrate 1 processing busbar 4, using busbar 4 is reconnected the battery thin film 2 of every row
Get up, this not only adds the difficulty of production, and delineate the power output that more cell areas reduce battery, increase
The cost of battery, and adjacent battery thin film 2 disconnects or short circuit once there is connection, and the battery thin film 2 of full line can all be reported
Give up, reliability is very low.
The content of the invention
The technical problem to be solved in the present invention is：Overcoming the deficiencies in the prior art, there is provided a kind of processing technology is simple, cost
Low light-transmission type copper indium gallium selenide cell component preparation technology, on battery thin film formed transmission region while, battery thin film according to
Secondary to be connected in series, the damage to battery is small, easy to connect.
The technical solution adopted for the present invention to solve the technical problems is：The light-transmission type copper indium gallium selenide cell component prepares work
Skill, it is characterised in that comprise the following steps：
1）, laying substrate；
2）, battery thin film is plated on substrate；
3）, encapsulation；
Wherein step 2）Specifically include following steps：
201）, hearth electrode is plated on substrate, delineate printing opacity groove on hearth electrode, the hearth electrodes of printing opacity groove both sides is the
One hearth electrode and the second hearth electrode；
202）, light-absorption layer is plated on hearth electrode；
203）, on light-absorption layer delineation series connection groove；
204）, plate Top electrode on light-absorption layer, printing opacity groove and series connection groove make Top electrode be connected with the first hearth electrode, together
When disconnect Top electrode and the second hearth electrode；
205）, in the Top electrode on the upside of the first hearth electrode delineate insulated trench.
It is preferred that, the step 203）Specific method is：Cushion is plated on light-absorption layer, in the first hearth electrode close to printing opacity
On the light-absorption layer and cushion of groove side, printing opacity groove string is delineated on the light-absorption layer and cushion of the first hearth electrode side
Joining in groove, the printing opacity groove between series connection groove and the second hearth electrode has light-absorption layer.
It is preferred that, in delineation series connection groove, delineation is close to the hearth electrode of part first of printing opacity groove, the first bottom of adjustment electricity
Width between pole and the second hearth electrode.
It is preferred that, the insulated trench runs through light-absorption layer.
It is preferred that, the light-absorption layer material is CIGS.
It is preferred that, the thickness of the cushion is 30 ~ 100nm.
It is preferred that, the material of the cushion is CdS or ZnS.
It is preferred that, the light-absorption layer thickness is 1 ~ 3 μm；The thickness of the Top electrode is 50 ~ 1500nm.
It is preferred that, the step 1）In substrate is cleaned, specifically include following steps：
101）, deionized water rinsing；
102）, cleaning agent hairbrush cleaning；
103）, deionized water rinsing；
104）, air-dry.
It is preferred that, the step 3）Specifically include following steps：
301）, foreboard and/or substrate surrounding lay encapsulant；
302）, draw electrode, welding aluminium strip；
303）, on the upside of flexible battery film lay sealed Cellophane；
304）, laying foreboard；
305）, lamination, using laminating machine by foreboard, battery thin film and substrate layer consolidation；
306）, cooling；
307）, connection terminal box.
Compared with prior art, the present invention is had an advantageous effect in that：Insulated trench makes the upper electricity on the first hearth electrode
Pole forms open circuit, the Top electrode on the second hearth electrode is connected with the formation of the first hearth electrode, by whole battery thin after setting gradually
Film cascade gets up, and forms one and generates electricity overall, it is not necessary to which busbar is connected, and connection is reliable.In the middle part shape of battery thin film
Into the Top electrode series connection hearth electrode in transmission region, and transmission region, battery thin film can also be connected into while printing opacity
One entirety.
Brief description of the drawings
Fig. 1 is the front view of existing light-transmitting component.
Fig. 2 is the front view of the light-transmission type copper-indium-gallium-selenium photovoltaic battery component.
Fig. 3~Fig. 9 is step 2）The schematic diagram of one embodiment.
Figure 10 is step 3）Schematic diagram.
Figure 11~Figure 16 is step 2）Another embodiment schematic diagram.
Wherein：1st, substrate 2, battery thin film 200, hearth electrode 201, the first hearth electrode 202, the second hearth electrode 300,
Light-absorption layer 400, cushion 500, Top electrode 3, transmission region 4, busbar 5, printing opacity groove 6, series connection groove 7, insulation
Groove 8, sealed Cellophane 9, foreboard.
Embodiment
Fig. 1 ~ 10 are the most preferred embodiments of light-transmission type copper indium gallium selenide cell component preparation technology, below in conjunction with the accompanying drawings 1 ~ 16
The present invention will be further described.
Reference picture 2, using euphotic solar energy battery made from light-transmission type copper indium gallium selenide cell component preparation technology, in electricity
The series connection hearth electrode 200 of Top electrode 500 that the middle part of pond film 2 is formed in transmission region 3, and transmission region 3, in the same of printing opacity
When battery thin film 2 can also be connected into an entirety, lower mask body is entered to light-transmission type copper indium gallium selenide cell component preparation technology
Row is explained.
Light-transmission type copper indium gallium selenide cell component preparation technology, comprises the following steps：
1）, laying substrate 1；
2）, on substrate 1 plate battery thin film 2；
3）, encapsulation；
Wherein step 2）Specifically include following steps：
201）, reference picture 3, on substrate 1 plate hearth electrode 200；
Reference picture 4, delineates printing opacity groove 5, the hearth electrode 200 of the both sides of printing opacity groove 5 is the first bottom electricity on hearth electrode 200
The hearth electrode 202 of pole 201 and second.
202）, reference picture 5, on hearth electrode 200 plate light-absorption layer 300, can not accurately be carried out during plated film, so
Can only whole plated films, this will plate light-absorption layer 300 in printing opacity groove 5.
203）, on light-absorption layer 300 delineation series connection groove 6；
Specific method is：Reference picture 6, plates cushion 400 on light-absorption layer 300；Reference picture 7, in the side of printing opacity groove 5
Delineation series connection groove 6, the also extinction in the upside of the first hearth electrode 201 on first hearth electrode 201, light-absorption layer 300 and cushion 400
Delineation series connection groove 6 on layer 300 and cushion 400, such Top electrode 500 can be just directly overlayed first in series connection groove 6
On hearth electrode 201, it is ensured that Top electrode 500 can be connected reliably with the first hearth electrode 201, the side of the second hearth electrode 202 it is saturating
Still there is light-absorption layer 300 in light groove 5；Delineation can adjust the first bottom close to the first hearth electrode of part 201 of printing opacity groove 5
Width between the hearth electrode 202 of electrode 201 and second, can thus draw narrow printing opacity groove 5, processing in start time
It is convenient.
204）, reference picture 8, on light-absorption layer 300 plate Top electrode 500, printing opacity groove 5 and series connection groove 6 make Top electrode 500
Connected with the first hearth electrode 201, while the light-absorption layer 300 in printing opacity groove 5 makes Top electrode 500 be disconnected with the second hearth electrode 202.
205）, reference picture 9, insulated trench 7, insulated trench 7 are delineated in the Top electrode 500 of the upside of the first hearth electrode 201
The Top electrode 500 on the first hearth electrode 201 is formed open circuit, make the hearth electrode of Top electrode 500 and first on the second hearth electrode 202
201 form series connection, and whole battery thin film 2 is together in series after setting gradually, and form one and generate electricity overall, it is not necessary to busbar 4
Connection, and connection is reliable.Insulated trench 7 runs through light-absorption layer 300, naturally it is also possible to only run through Top electrode 500.Printing opacity groove 5
Interior and the other layers of battery thin film 2 are printing opacity because without hearth electrode 200 and light-absorption layer 300, thus on substrate 1
Form transmission region 3.
The material of light-absorption layer 300 is CIGS in the present embodiment；The material of cushion 400 is CdS（Cadmium sulfide）.Further
, the thickness of cushion 400 is 30 ~ 100nm；The thickness of Top electrode 500 is 50 ~ 1500nm；The thickness of light-absorption layer 300 is 1 ~ 3 μ
m。
Reference picture 10, step 3）Specifically include following steps：
301）, in the surrounding of foreboard 9 and/or substrate 1 encapsulant is laid, in the downside surrounding of foreboard 9 in the present embodiment
Encapsulant is set；
302）, draw electrode, welding aluminium strip, the Top electrode 500 of the hearth electrode 200 of the side of battery thin film 2 and opposite side is welded
Aluminium strip is connected, so as to which the electricity of battery thin film 2 is drawn；
303）, in the upside of flexible battery film 2 laying sealed Cellophane 8；
304）, laying foreboard 9；
305）, lamination, using laminating machine by foreboard 9, battery thin film 2 and substrate 1 lamination be integrated；
306）, cooling；
307）, connection terminal box.
Step 1 in the present embodiment）Need to clean substrate 1 before laying substrate 1, specifically include following steps：
101）, deionized water rinsing；
102）, cleaning agent hairbrush cleaning；
103）, deionized water rinsing；
104）, air-dry.Pass through deionized water rinsing twice, it is ensured that improve the reliability of battery without any pollution in the surface of substrate 1
Property.
In another embodiment, reference picture 11, step 201）In, delineated on hearth electrode 200 one it is relatively wide saturating
Light groove 5, the width of transmission region 3 disposably is depicted, reference picture 12 and Figure 13, and plating is inhaled successively on hearth electrode 200
Photosphere 300 and cushion 400.
Step 203）Specific method is：Reference picture 14, printing opacity groove 5 close to the side of the first hearth electrode 201 light-absorption layer
300 and cushion 400 on and light-absorption layer 300 and cushion 400 on the first hearth electrode 201 on draw series connection groove 6, reference
There is light-absorption layer 300 to realize open circuit between Top electrode 500 in Figure 15 and 16, the second hearth electrode 202 and printing opacity groove 5, and on
Electrode 500 is connected with the first hearth electrode 201.
In another embodiment, the material of light-absorption layer 300 is CIGS；The material of cushion 400 is ZnS.Further, delay
The thickness for rushing layer 400 is 30 ~ 100nm；The thickness of Top electrode 500 is 10 ~ 100nm；The thickness of light-absorption layer 300 is 1 ~ 3 μm.
A floor height resistance layer can also be plated in the present invention on cushion 400, the thickness of resistive formation is 10 ~ 100nm；Certainly also
It should be appreciated that battery thin film 2 has far more than the layer structure listed by the present invention, the present invention is simply by necessary layer structure
Draw and explain.Described delineation can be laser grooving and scribing or mechanical scratching in the present invention.
The above, is only presently preferred embodiments of the present invention, is not the limitation for making other forms to the present invention, appoints
What those skilled in the art changed or be modified as possibly also with the technology contents of the disclosure above equivalent variations etc.
Imitate embodiment.But it is every without departing from technical solution of the present invention content, the technical spirit according to the present invention is to above example institute
Any simple modification, equivalent variations and the remodeling made, still fall within the protection domain of technical solution of the present invention.
Claims (8)
1. a kind of light-transmission type copper indium gallium selenide cell component preparation technology, it is characterised in that comprise the following steps：
1）, laying substrate（1）；
2）, in substrate（1）Upper plating battery thin film（2）；
3）, encapsulation；
Wherein step 2）Specifically include following steps：
201）, in substrate（1）Upper plating hearth electrode（200）, in hearth electrode（200）Upper delineation printing opacity groove（5）, printing opacity groove（5）
The hearth electrode of both sides（200）For the first hearth electrode（201）With the second hearth electrode（202）；
202）, in hearth electrode（200）Upper plating light-absorption layer（300）；
203）, in light-absorption layer（300）Upper delineation series connection groove（6）；
204）, in light-absorption layer（300）Upper plating Top electrode（500）, printing opacity groove（5）With series connection groove（6）Make Top electrode（500）With
First hearth electrode（201）Connection, while making Top electrode（500）With the second hearth electrode（202）Disconnect；
205）, in the first hearth electrode（201）The Top electrode of upside（500）Upper delineation insulated trench（7）；
The step 203）Specific method is：In light-absorption layer（300）Upper plating cushion（400）, in the first hearth electrode（201）It is close
Printing opacity groove（5）The light-absorption layer of side（300）And cushion（400）Upper, printing opacity groove（5）Close to the first hearth electrode（201）One
The light-absorption layer of side（300）And cushion（400）Upper delineation series connection groove（6）, groove of connecting（6）With the second hearth electrode（202）It
Between printing opacity groove（5）It is interior that there is light-absorption layer（300）；The cushion（400）Thickness be 30 ~ 100nm.
2. light-transmission type copper indium gallium selenide cell component preparation technology according to claim 1, it is characterised in that：In delineation series connection
Groove（6）When, delineation is close to printing opacity groove（5）The hearth electrode of part first（201）, adjust the first hearth electrode（201）With second
Hearth electrode（202）Between width.
3. light-transmission type copper indium gallium selenide cell component preparation technology according to claim 1, it is characterised in that：The isolation trench
Groove（7）Through light-absorption layer（300）.
4. light-transmission type copper indium gallium selenide cell component preparation technology according to claim 1, it is characterised in that：The light-absorption layer
（300）Material is CIGS.
5. light-transmission type copper indium gallium selenide cell component preparation technology according to claim 1, it is characterised in that the cushion
（400）Material be CdS or ZnS.
6. light-transmission type copper indium gallium selenide cell component preparation technology according to claim 1, it is characterised in that：The light-absorption layer
（300）Thickness is 1 ~ 3 μm；The Top electrode（500）Thickness be 50 ~ 1500nm.
7. light-transmission type copper indium gallium selenide cell component preparation technology according to claim 1, it is characterised in that：The step 1）
In will be to substrate（1）Cleaned, specifically include following steps：
101）, deionized water rinsing；
102）, cleaning agent hairbrush cleaning；
103）, deionized water rinsing；
104）, air-dry.
8. light-transmission type copper indium gallium selenide cell component preparation technology according to claim 1, it is characterised in that：The step 3）
Specifically include following steps：
301）, in foreboard（9）And/or substrate（1）Surrounding laying encapsulant；
302）, draw electrode, welding aluminium strip；
303）, in flexible battery film（2）Lay sealed Cellophane in upside（8）；
304）, laying foreboard（9）；
305）, lamination, using laminating machine by foreboard（9）, battery thin film（2）And substrate（1）Lamination is integrated；
306）, cooling；
307）, connection terminal box.
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| US11715805B2 (en) | 2017-09-29 | 2023-08-01 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Semitransparent thin-film solar module |
| WO2019062788A1 (en) | 2017-09-29 | 2019-04-04 | (Cnbm) Bengbu Design & Research Institute For Glass Industry Co., Ltd | Semitransparent thin-film solar module |
| US11515440B2 (en) | 2017-09-29 | 2022-11-29 | Cnbm Research Institute For Advanced Glass Materials Group Co., Ltd. | Semitransparent thin-film solar module |
| CN114551635A (en) * | 2021-04-19 | 2022-05-27 | 北京劲吾新能源科技有限公司 | Method for eliminating color photovoltaic hot spot phenomenon |
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| AU2013255707A1 (en) * | 2012-05-03 | 2014-11-13 | Nexcis | Laser etching a stack of thin layers for a connection of a photovoltaic cell |
| CN204741024U (en) * | 2015-05-16 | 2015-11-04 | 山东淄博汉能薄膜太阳能有限公司 | Novel printing opacity type photovoltaic cell subassembly |
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Address after: 255086 No. 1999, Min Xiang Road, hi tech Zone, Zibo, Shandong Patentee after: National thin film solar technology (Zibo) Co.,Ltd. Address before: 255086, Zibo high tech Zone, Shandong province hi tech Industrial Innovation Park, B block, 15 Floor Patentee before: SHANDONG ZIBO HANERGY FILM SOLAR ENERGY Co.,Ltd. |