CN104538468A - Silicon-based film solar battery and manufacturing method thereof - Google Patents
Silicon-based film solar battery and manufacturing method thereof Download PDFInfo
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- CN104538468A CN104538468A CN201510031893.0A CN201510031893A CN104538468A CN 104538468 A CN104538468 A CN 104538468A CN 201510031893 A CN201510031893 A CN 201510031893A CN 104538468 A CN104538468 A CN 104538468A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 53
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 53
- 239000010703 silicon Substances 0.000 title claims abstract description 53
- 238000004519 manufacturing process Methods 0.000 title abstract description 12
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 95
- 239000002002 slurry Substances 0.000 claims abstract description 94
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 67
- 229910052802 copper Inorganic materials 0.000 claims abstract description 67
- 239000010949 copper Substances 0.000 claims abstract description 67
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 60
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 56
- 238000000034 method Methods 0.000 claims abstract description 21
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 6
- 239000002184 metal Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 122
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 25
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- UORVGPXVDQYIDP-UHFFFAOYSA-N trihydridoboron Substances B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 claims description 12
- 238000006243 chemical reaction Methods 0.000 claims description 9
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- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 8
- 229910000077 silane Inorganic materials 0.000 claims description 8
- 239000001488 sodium phosphate Substances 0.000 claims description 8
- 229910000162 sodium phosphate Inorganic materials 0.000 claims description 8
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 claims description 8
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 3
- 229910052796 boron Inorganic materials 0.000 claims description 3
- 239000011538 cleaning material Substances 0.000 claims description 3
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- 239000002131 composite material Substances 0.000 description 11
- 239000004411 aluminium Substances 0.000 description 9
- 229910052782 aluminium Inorganic materials 0.000 description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 8
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- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910000792 Monel Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 210000001142 back Anatomy 0.000 description 2
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- 238000013084 building-integrated photovoltaic technology Methods 0.000 description 2
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- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 1
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- 238000005728 strengthening Methods 0.000 description 1
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PIN type, e.g. amorphous silicon PIN solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
- H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses manufacturing and process of a silicon-based film solar battery and belongs to the technical field of solar batteries. The invention aims to solve the technical problems that an existing silicon-based film battery is large in leakage current under a weak light condition, and the surface of the battery has hard spots and is subjected to demolding and the like. The silicon-based film solar battery is technically characterized by comprising a front electrode graphics array, an anti-creeping shielding wire or an insulated wire at an edge of a front electrode, and various through holes penetrating through PIN amorphous silicon layers, wherein the back electrode of the PIN amorphous silicon N layer is a compound metal back electrode or a carbon paste electrode; the width of the shielding wire between the front electrode graphics array and adjacent nodes is 0.3-0.6mm, the doping ratio of a P layer is smaller than 1%, and the leakage current is significantly reduced. The adhesive force for the back electrode to draw out a copper slurry electrode reaches 0.6kg and more than 0.6kg. The implementation of the manufacturing and the process of the silicon-based film solar battery, disclosed by the invention, has the positive effects that the yield and appearance quality are greatly improved, the voltage is stable, the production cost is reduced, the yield is greatly improved, and the technical innovation is more detailed.
Description
Technical field
The invention discloses a kind of silicon-based film solar cells yields to promote, be more tending towards the refinement of technological innovation, trickle improvement, belong to technical field of solar cell manufacturing.
Background technology
The thin-film solar cells commercially produced is divided into silica-base film, cadmium telluride, Copper Indium Gallium Selenide three class substantially.Wherein the most cheap relative cost performance of silicon-based film solar cells is the most reasonable.The low light level and the large class of high light two is divided into again from application point silicon-based film solar cells.Illumination ten thousand grades of more than LUX are high light type silicon-based film solar cells, use under being applicable to outdoor environment.Illumination several thousand below LUX is dyssophotic silicon-based film solar cells, and product is applicable to being applied in the more weak environment of light.Non-crystal silicon solar cell is widely used in consumer electronics product along with the development of lcd technology and does battery chip, sensor.High light type silicon-based film solar cells and cadmium telluride, the same energy of copper-indium-galliun-selenium film solar cell, for photovoltaic (PV) power station and BIPV (BIPV).Chinese invention patent ZL95104992.5 is a kind of non-crystal silicon solar cell used under low light environment, this invention solves many technical barriers and technological problems in amorphous silicon thin-film solar cell manufacture, but still there is a problem such as raising yields and presentation quality etc.At present, leading thin-film solar cells is (hereinafter referred to as cell panel, battery or battery chip) its cost performance of silicon-based film solar cells in market is reasonable, market potential is large, but still be faced with lifting again and the appearance quality of the yields of product, need break-through skill bottleneck, innovative ability achieves the goal.As silicon-based film solar cells still exists an electrical leakage problems, sometimes there is the phenomenons such as voltage jump, make voltage stable not.Trace it to its cause relevant with the course of processing, the conducting film in front electrode pattern can produce burr and chip, causes the insulation isolation spacing of conducting film between adjacent cell joint to reduce.In addition, film comes off relevant with thin-film solar cells substrate (or claiming substrate) adhesion performance with electrode adhesion difference.As dyssophotic amorphous solar cell, leakage current is large, and under unglazed radiation situation, forward applies 1.7V direct voltage, and leakage current is much larger than 0.3 microampere.Tool add up, during batch production, usually nearly 5% battery chip copper slurry electrode adhesion do not reach 0.6 kilogram, film can come off, and serious meeting causes non-crystal silicon solar cell complete failure.Product appearance quality, mainly concentrates on surface and occurs " pit ".ITO nesa coating exists dirty electric leakage to be also exposed to the shielding wire of ITO conducting film and outer to be infected with moist dirt in dirty or air, also all can cause electric leakage.In addition, carbon slurry back electrode is carried on the back enamelled coating with protection and is not overlapped completely, causes carbon slurry back electrode edge to be exposed to and also can produce electric leakage outward.Only have adhesive force reach 0.6 kilogram and more than, copper slurry electrode just difficult drop-off.
Summary of the invention
The present invention by the above analysis to the subject matter that prior art exists and research, and by commerical test, to the product quality difficult problem that urgently will solve, provides technical solution.
The object of the invention is: further electrode electrograph shape before silicon-based film solar cells is improved in refinement, overcomes and is come off by rete and cause spread of voltage; Reduce leakage current; " pit " of eliminating the appearance of product appearance surface improves product yields.
Another object of the present invention is: the technical barrier that under solution low light condition, non-crystal silicon solar cell leakage current is large, changes the inner impurity defect density of silicon-based film solar cells P layer, significantly reduces leakage current, improve battery performance.
Another object of the present invention is: the back electrode structure improving non-crystal silicon solar cell, strengthens battery pond back electrode and comprises the copper slurry electrode adhesion of being drawn by back electrode, reduce production cost.
For realizing task and the object of the present invention's proposition, technology is provided to solve support scheme: a kind of silicon-based film solar cells, comprises substrate, front electrode,
pINphotoelectric conversion layer and back electrode, its technical characteristic is that said front electrode is electrode pattern array before nesa coating, at least comprises ITO, ZnO, one in graphene transparent conductive film, said front electrode pattern array is coated on transparent substrate, comprises the edge of substrate; Said PIN photoelectric conversion layer is silica-based amorphous silicon layer, and front electrode pattern array also comprises the insulated wire of anti-creeping shielding wire or front electrode edge, the various through holes of through PIN amorphous silicon layer; The back electrode of said PIN amorphous silicon N layer is the one that composition metal back electrode or carbon starch in electrode; Said carbon slurry electrode is the PIN amorphous silicon N layer back electrode having back of the body paint protective layer, it is drawn in back of the body paint protective surface and carbon slurry electrode surface that copper slurry electrode covers back of the body paint protective layer opening part, and the adhesive force starching electrode to strengthen copper prevents rete from coming off.
The solution of the present invention also comprises silicon-based film solar cells preparation method, its technical characteristic is with ITO, ZnO,, graphene transparent conductive film a kind of nesa coating wherein prepare on substrate before electrode pattern array, nesa coating, comprise, saidly transparently be coated on transparent substrate, comprise the edge of substrate; Be included in electrode pattern before electro-conductive glass substrate or conductivity polyimide substrate conducting film are formed, its technical characteristic is that preparing front electrode pattern method comprises laser grooving and scribing and silk screen printing; Electrode pattern before selection silk screen printing, is equipped with the shielding wire of one fixed width with anticreep between the figure of adjacent connection; Element cell periphery has the ITO conducting film strengthening adhesive force in case rete comes off; Adopt ablution eliminate before electrodes conduct patterned surface " pit " can, comprise water cleaning, Ultrasonic Cleaning; The N layer dorsum electrode layer of PIN selects carbon to starch electrode, makes back electrode draw with copper slurry electrode, back of the body paint protective layer carbon coated slurry electrode layer.
Implementing good effect of the present invention is by technological innovation, breaches traditional design thinking, greatly improves and has risen non-crystal silicon solar cell yields and presentation quality, eliminate front electrode pit, and leakage current obviously work reduces, voltage stabilization, and production cost reduces.
Before the ITO nesa coating of conventional Weak light type amorphous silicon solar battery process, the surrounding of electrode is along being removed, cause easily coming off at the amorphous silicon film on the edge, surrounding without ITO film, amorphous silicon before further initiation ITO nesa coating on electrode isolation line comes off, the present invention changes the structure of electrode before ITO nesa coating, retain the ito film on edge, non-crystal silicon solar cell surrounding, be not removed, just can solve the adeciduate problem of amorphous silicon film layer.
Weak light type amorphous silicon solar cell P layer amorphous silicon adopts heavy doping to prepare often, the dopant ratio of usual boron and silicon is even higher 1%, so inner impurity defect density of p layer that will cause is very large, produces a large amount of Carrier recombination centers, significantly increases the leakage current of inside battery.
The present invention adopts the flowrate proportioning of suitable silane and trimethyl borine, when ensureing that battery open circuit voltage is constant, makes the dopant ratio of boron be less than 1%, greatly reduces the inner impurity defect density of p layer, significantly reduces leakage current.
The back electrode of usual Weak light type amorphous silicon solar cell adopts carbon slurry conductive layer; copper slurry electrode makes extraction electrode; in order to protect carbon slurry back electrode, one deck back of the body paint protective layer to be made thereon, and then make one deck copper slurry electrode layer on the opening that back of the body paint protective layer is reserved.Usually the thinking of general designer is that increase copper slurry electrode and carbon starch the contact area of dorsum electrode layer as far as possible; to reduce contact resistance as much as possible; and copper slurry is material costly; its area can not do very large; therefore the copper slurry electrode designed starches back electrode contact area as far as possible with carbon large; and with the back of the body, to paint the contact area of protective layer as far as possible little, to save cost.But like this design have an appointment 5% cell piece copper slurry electrode adhesion do not reach 0.6 kilogram, cause copper starch electrode easily come off.Find that the adhesive force of copper slurry electrode on back of the body paint protective layer is larger than the adhesive force of copper slurry electrode on carbon slurry back electrode by testing us, think through carefully analyzing us on the other hand, amorphous silicon membrane is a kind of semi insulating material, its electron mobility is low, usually 0.5cm2/v.s is no more than, therefore the internal resistance of non-crystal silicon solar cell is large, its series resistance (comprises volume resistance, the lateral resistance of electrode before carbon slurry back electrode lateral resistance and nesa coating) also large, and the contact resistance of back electrode is starched much larger than copper slurry electrode and carbon, even if the contact area therefore reducing copper slurry electrode and carbon slurry back electrode also can not have an impact to the electrical property of non-crystal silicon solar cell, analyze based on this, when keeping copper slurry electrode area constant, reduce the aperture area on protection back of the body enamelled coating, reduce the contact area of copper slurry electrode and carbon slurry back electrode, the corresponding contact area increasing copper slurry electrode and protection back of the body enamelled coating, because of copper slurry electrode, to paint protective layer adhesion good with the back of the body, the adhesive force making copper starch electrode significantly increases, the copper of all batteries sheet can be made to starch electrode adhesion and to reach more than 0.6 kilogram, the firm difficult drop-off of copper slurry electrode.
The reason of said spread of voltage has three aspects above, one is because all there is ITO film on cell piece limit, when cutting into cell piece by large plate cell panel, the ITO film of adjacent segments easily produces burr or chip makes the shielding wire spacing of adjacent segments ITO film reduce, and causes the possibility of electric leakage greatly to increase; Two is outside the shielding wire of the ITO film at edge is exposed to, and in cell piece transportation, in the dirty or air that shielding wire is infected with, moist dirt causes electric leakage; Three is that carbon slurry back electrode carry on the back enamelled coating do not overlap completely with protection, causes outside carbon slurry back electrode edge is exposed to, and also can cause leaking electricity because of moist dirt in dirty or air that shielding wire is infected with.The operating current of usual Weak light type amorphous silicon solar cell is tens microamperes, if therefore leakage current reaches 1 microampere, will produce its voltage and compare considerable influence, and the voltage of adjacent two internodes is 0.8V, according to Ohm's law R=U/I, R=0.8/ (1x10-6)=0.8x106 Ω, that is, if the insulation resistance of adjacent two internodes is little of 0.8x106 Ω and 0.8M Ω, larger impact will be produced to cell voltage, the ito film burr produced when usually cutting cell piece in actual production or the length of chip are less than 0.3mm, if it is 0.001mm that ITO burr length reaches its width of 0.28mm, just in time adjacent two joint ito film are connected together, and the thickness of the actual ITO film used is about 77nm, the resistivity of ito film is 3.85x10-4 Ω cm, the resistance that can calculate burr according to resistance formula R=ρ L/S is:
R=3.85x10-4x0.28x10-1/ (0.001x10-1x77x10-7)=1.4x104 Ω, this resistance is much smaller than above-mentioned 0.8x106 Ω, the leakage current that this burr causes is much larger than 1 microampere, voltage will be had a strong impact on, therefore the shielding wire width of ITO nesa coating fixes on more than 0.3mm, consider the too wide effective area that can reduce battery of shielding wire, shielding wire width of the present invention is 0.3 ~ 0.6mm simultaneously;
On the other hand protection back of the body enamelled coating is designed to larger than carbon slurry back electrode area, makes it complete coated carbon slurry back electrode.Cell voltage wild effect is eliminated by above measure.
The present invention is as follows for the technology contents that dyssophotic silicon-based film solar cells is detailed:
Adopt the ITO transparent conducting glass of 14 inches of x16 inches, can arrange thereon and make many Weak light type amorphous silicon solar battery sheets.
First electrode pattern before making ITO nesa coating.On ITO transparent conducting glass, silk screen printing one deck acid-proof ink is as mask layer, and form electrode pattern before required ITO by wet chemical etching technique method, the isolation live width before adjacent segments nesa coating between electrode is in 0.4mm ~ 0.6mm scope.
After removing acid-proof ink, clean, for eliminating pit, adopt unique cleaning solution composition and engineering, first carry out oil removing, adopt the mixed solution of NaOH and sodium phosphate, weight proportion is water: NaOH: sodium phosphate=(135 ~ 155): (1 ~ 3): (3 ~ 5), the ito glass removing acid-proof ink is put into the solution prepared, and soak 2 ~ 10 minutes, solution temperature controls at 45 ~ 50 degrees Celsius;
Carry out ultrasonic cleaning afterwards, ultrasonic cleaning liquid adopts unique formula, and weight proportion is water: elite cleaning powder=(1200 ~ 1400): (6 ~ 8), and the ito glass after deoiling is put into the solution prepared, ultrasonic cleaning 40 ~ 80 minutes, solution temperature controls at 45 ~ 60 degrees Celsius;
Ito glass cleans after automatic rinser carries out again, and puts into deposition clamp and vacuum chamber deposition P, I, N layer amorphous silicon after having cleaned.In order to reduce the leakage current of Weak light type amorphous silicon solar cell, P layer amorphous silicon have employed special deposition process parameters and raw material gas flow proportioning, flowrate proportioning is: trimethyl borine: methane: silane: hydrogen=(5 ~ 7): (30 ~ 40): (60 ~ 65): (15 ~ 17), wherein the concentration of trimethyl borine is 3%, i.e. trimethyl borine: (trimethyl borine+silane)=3%, depositing temperature 225 degrees Celsius, deposition pressure 60Pa, discharge power 85W;
Adopt laser grooving and scribing amorphous silicon film afterwards; then silk screen printing carbon slurry makes carbon slurry back electrode successively; silk screen printing back of the body paint makes back of the body paint protective layer; in order to eliminate spread of voltage phenomenon; back of the body paint protective layer is done larger than carbon slurry back electrode; with complete coated carbon slurry back electrode, consider that screen printing is brushed with certain misalignment tolerances, back of the body paint protective layer 0.5 ~ 2mm larger than carbon slurry back electrode surrounding.
Then silk screen printing copper slurry makes copper slurry electrode, starches the adhesive force of electrode in order to increase copper, adopts and increases copper slurry electrode and carry on the back the contact area painting protective layer, and corresponding reduction copper slurry electrode and carbon starch the contact area of back electrode.The long x wide region of copper slurry electrode is (1.3 ~ 1.6) x (2.6 ~ 3.5) mm, large more than the 1mm of the length of side of the side ratio back of the body paint opening of copper slurry electrode, wide roomy more than the 0.6mm than back of the body paint opening of copper slurry electrode.
Accompanying drawing explanation
Operation principle of the present invention is described further by reference to the accompanying drawings:
Fig. 1, be the generalized section of the silica-based non-crystal silicon solar cell structure of the present invention.
Electrode 1 before wherein doing with ITO nesa coating; the silica-based amorphous silicon layer 2 of PIN; carbon slurry electrode 3; back of the body paint protective layer 4, copper slurry electrode 5,5-1 is drawn as negative electrode; 5-2 draws as positive electrode; substrate 6 is glass, and 2-2 choosing then saves the PIN amorphous silicon layer of no longer opto-electronic conversion one, the N layer wherein electrode 1 before ITO nesa coating being guided to PIN amorphous silicon layer 2 is positive electrode 3-2.
Fig. 2, be the front electrode generalized section of prior art ITO nesa coating.
The wherein shielding wire 1 '-1 of electrode before electrode 1 ', ITO nesa coating before glass substrate 6, ITO nesa coating.Glass substrate surrounding does not have ITO nesa coating as we can see from the figure, this design subsequent there will be the serious demoulding of glass substrate week border area amorphous silicon, and then the amorphous silicon film before causing ITO nesa coating on electrode isolation line comes off, and causes solar cell failure.
Accompanying drawing 3, be electrode pattern 1 schematic diagram before ITO nesa coating in Fig. 1 of the present invention.
Wherein 6 is glass substrate, and the shielding wire 1-1 of electrode 1 before electrode 1, ITO nesa coating before ITO nesa coating, the ITO nesa coating on edge, glass substrate 6 surrounding is retained as we can see from the figure, can effectively prevent coming off of follow-up amorphous silicon film.Can see that the shielding wire 1-1 width (0.4 ~ 0.6mm) of electrode 1 is wider than the shielding wire (below 0.3mm) 1 '-1 of prior art before ITO nesa coating of the present invention, to reduce because cutting produces the possibility that Fig. 2 conducting film chip and burr or dirt cause leaking electricity.
Fig. 4, be back electrode in Fig. 1 of the present invention carbon slurry electrode 3 generalized section.
Wherein 6 is glass substrate, and the shielding wire 1-1 of electrode 1 before electrode 1, ITO nesa coating before ITO nesa coating, the ITO nesa coating on edge, glass substrate 6 surrounding is retained as we can see from the figure, can effectively prevent coming off of follow-up amorphous silicon film.Can see that the shielding wire 1-1 width (0.4 ~ 0.6mm) of electrode 1 is wider than the shielding wire (below 0.3mm) 1 '-1 of prior art before ITO nesa coating of the present invention, to reduce because cutting produces the possibility that Fig. 2 conducting film chip and burr or dirt cause leaking electricity.
Fig. 5, be in Fig. 1 of the present invention the back of the body paint protective layer 4, carbon oar electrode 3 generalized section.
Wherein glass substrate 6, back of the body paint protective layer 4,4-1,4-2 is all back of the body paint opening.Draw negative electrode by back of the body paint opening 4-1 copper slurry electrode, draw positive electrode by back of the body paint opening 4-2 copper slurry electrode.
Fig. 6, be the diagram that the back of the body paint protective layer of conventional Weak light type amorphous silicon solar cell and carbon slurry back electrode are superimposed together.Wherein 6 is glass substrates, and 3 ' is carbon slurry back electrode, and 4 is back of the body paint protective layers, and 5 is copper slurry electrodes.Because silk screen printing exists misalignment tolerances; make when being and producing, to carry on the back paint protective layer 4 and can not cover carbon slurry back electrode 3 ' completely; the shielding wire of the not coating carbon slurry back electrode 3 ' edge covered easily is caused electric leakage by dirty being infected with, and is one of reason making spread of voltage.
Fig. 7, be the generalized section of the copper slurry back of the body paint protective layer 4 of electrode 5 in Fig. 1 and carbon slurry electrode 3.
Figure A amplifies circle interior expression copper slurry electrode 5 starches electrode 3 extraction respectively positive electrode 3-2 at back of the body paint protective layer 4 and carbon, glass substrate 6, carbon slurry back electrode 3, back of the body paint protective layer 4, copper slurry electrode 5, carbon slurry electrode 3 is less than back of the body paint protective layer 4 area, even if therefore screen printing is brushed with misalignment tolerances, back of the body paint protective layer 4 also can encase carbon slurry back electrode 3 in surrounding along covering completely, the probability producing spread of voltage can be reduced, copper slurry electrode 5 covers back of the body paint opening 4-1, the upper (see figure 5) of 4-2, copper slurry electrode 5 and the back of the body paints the contact copper of area ratio routine non-crystal silicon solar cell in region of protective layer 4 and starch electrode and carry on the back that to paint the protective layer region area that contacts large, make the copper slurry electrode adhesion of all element cells all to more than 0.6 kilogram, copper slurry electrode very firmly difficult drop-off, display back of the body paint protective layer keeps carbon slurry back electrode edge placement.
Fig. 8, be the generalized section of electrode before the embodiment of the present invention 6 circular non-opaque conducting film.
Wherein glass substrate 6D, electrode 1D before ZnO nesa coating, the insulated wire 1D-2 of electrode rim before interelectrode shielding wire 1D-1, ZnO nesa coating before adjacent segments ZnO nesa coating, causes short circuit for preventing from overlapping when electrode 1D before cutting ZnO nesa coating and back electrode.
Fig. 9, be the embodiment of the present invention 6 laser incising except the generalized section of PIN film.
Wherein PIN amorphous silicon-based film 2D, the score line 2D-1 that the silica-based thin laser drilling of PIN amorphous is formed, as positive and negative electrode channels in series between adjacent single battery, glass substrate 6D, interelectrode shielding wire 1D-1 before electrode 1D, adjacent segments ZnO nesa coating before ZnO nesa coating.
Figure 10, be electrode and metal back electrode generalized section before the embodiment of the present invention 6.
Interelectrode shielding wire 1D-1 before electrode 1D, adjacent segments ZnO nesa coating before ZnO nesa coating, laser grooving and scribing composite back electrode 3D is the composite membrane of silverskin and monel, laser runs through the laser incising line 3D-1 of delineation amorphous silicon-based film and composite back electrode formation, shielding wire 2D between single battery, amorphous silicon-based film, glass substrate 6D.
Figure 11, be the generalized section of the transparent window of the embodiment of the present invention 6.
Circular non-crystal silicon solar energy element cell has made back of the body paint protective layer and generalized section after removing the amorphous silicon-based film in central, circular region and back electrode formation transparent window; wherein back of the body paint protective layer 4D; back of the body paint opening 4D-1; the use of welding positive and negative lead wires; PIN amorphous silicon-based film 2D, electrode 1D before glass substrate 6D, ZnO nesa coating; interelectrode shielding wire 1D-1, transparent window 2D-2 before adjacent segments ZnO nesa coating.
Figure 12, be the schematic diagram of pod apertures that the embodiment of the present invention 7 first time punching is formed.
Flexible amorphous silicon and amorphous silicon germanium lamination solar cell first time punching after schematic diagram.
Wherein polyimide flex substrate 6R, the pod apertures that first time punching is formed, for guiding to polyimide flex substrate back by back electrode.
Figure 13, be the first time punching schematic diagram of the embodiment of the present invention 7.
Continuous sputtering aluminium film is plated in polyimide flex substrate front after flexible amorphous silicon and the first time punching of amorphous silicon germanium lamination solar cell, silverskin and ITO nesa coating and the profile after polyimide flex substrate back jet-plating metallization aluminium film, wherein aluminium film 3R-1, metal silverskin 3R-2, ITO nesa coating 3R-3, pod apertures is filled rear pod apertures 3R-4 by above-mentioned each tunic, polyimide flex substrate 6R, the pod apertures 6R-1 that first time punching is formed is, the aluminium film 7R of polyimide flex substrate back.
Figure 14, be the embodiment of the present invention 7 second time punching cross-section illustration intention.
Being formed after flexible amorphous silicon and the punching of amorphous silicon germanium lamination solar cell second time to conflux hole 3R-5, by this adjacent single battery both positive and negative polarity being in series for collecting electric current.
Figure 15, be the folded face schematic diagram of the flexible amorphous silicon of the embodiment of the present invention 7 and amorphous silicon germanium.Flexible amorphous silicon becomes the N-type amorphous silicon film 2R-N1 after silica-base film with amorphous silicon germanium stack deposition, intrinsic amorphous silicon germanium film 2R-I1, P-type non-crystalline silicon film 2R-P1, N-type silica (SiO
x) 2R-N2, be intrinsic amorphous silicon germanium film 2R-I2, P-type non-crystalline silicon film 2R-P2, the pod apertures 2R-1 after silica-base film is filled, the hole 2R-2 that confluxes after silica-base film is filled.
Figure 16, be the embodiment of the present invention 7 laser grooving and scribing after generalized section.
Flexible amorphous silicon and amorphous silicon germanium lamination solar cell have deposited ITO nesa coating and after laser grooving and scribing, wherein ITO nesa coating 1R, as front electrode, through the hole 1R-1 that confluxes that ITO nesa coating is filled, that laser runs through delineation composite back electrode, the shielding wire 3R-6 that silica-base film and ITO nesa coating are formed, the aluminium film laser grooving and scribing shielding wire 7R-1 of polyimide flex substrate back.
Figure 17, be the laminating packaging of the embodiment of the present invention 7 complete after generalized section.
Flexible amorphous silicon and amorphous silicon germanium lamination solar cell laminating packaging complete after, wherein PET(PETG) 4R, both positive and negative polarity is drawn and is coated with tin band 5R, ETFE(ethylene-tetrafluoroethylene copolymer) 8R is, EVA(ethylene-vinyl acetate copolymer) 9R is.
Embodiment
Example 1, embodiment of the present invention Fig. 3, Fig. 5, Fig. 7
Concrete manufacture method is as follows:
Electrode pattern before preparation
Before the ITO transparent conducting glass of 356x406 square millimeter needs design according to Weak light type amorphous silicon solar cell, (element cell is composed in series by four single batteries electrode pattern, whole ITO transparent conducting glass is of a size of periodic array arrangement with element cell length and width) adopt method for printing screen to print one deck acid-proof ink, and solidification is as etching mask layer, then by the ITO transparent conducting glass of solidification acid-proof ink, put into ferric trichloride, corrode in the mixed solution of hydrochloric acid and water, exposed ITO nesa coating is eroded, electrode 1 before formation ITO nesa coating, before adjacent segments ITO nesa coating, the width of interelectrode shielding wire 1-1 is 0.5mm,
Water cleans
The transparent conducting glass corroded is put into sodium hydroxide solution and removes acid-proof ink, and rinse well with running water, then mixed solution ITO transparent conducting glass being put into NaOH and sodium phosphate carries out oil removing, the weight proportion of mixed solution is water: NaOH: sodium phosphate=144:2.6:3.5, the ito glass of removing acid-proof ink is put into the solution prepared, soak 10 minutes, solution temperature controls at 45 ~ 50 degrees Celsius;
Ultrasonic cleaning
The cleaning fluid that ITO transparent conducting glass after oil removing puts into unique formula is carried out ultrasonic cleaning, cleaning fluid weight proportion is water: cleaning material=1450:6.5, ito glass after deoiling is put into the solution prepared, ultrasonic cleaning 80 minutes, solution temperature controls at 45 ~ 60 degrees Celsius, rear cleaning is carried out afterwards with automatic rinser and pure water, and stand-by through air knife drying;
PIN amorphous silicon film deposits
By cleaned ITO transparent conducting glass, to load in deposition clamp and put into vacuum chamber using plasma chemical vapour deposition technique and carry out PIN amorphous silicon film deposition, wherein P layer amorphous silicon adopts special deposition process parameter and raw material gas flow proportioning, flowrate proportioning is: trimethyl borine: methane: silane: hydrogen=7:30:60:15, depositing temperature 200 ~ 250 degrees Celsius, deposition pressure 50 ~ 70Pa, discharge power 80 ~ 90W, sedimentation time 85 ~ 95 seconds;
Laser grooving and scribing shielding wire
Green laser grooving and scribing amorphous silicon film, form the laser drilling score line connecting adjacent two joint single batteries, often restrainting laser power is 0.4 ~ 0.6 watt, laser grooving and scribing live width 0.1 ~ 0.2mm, delineation while carry out powerful dust suction, prevent because of delineation formed amorphous silicon chip be scattering into laser drilling delineation shielding wire in affect battery performance;
Back electrode is formed
Successively silk screen printing carbon slurry and baking and curing become carbon starch back electrode 3, curing temperature controls at 145 ~ 155 degrees Celsius, and curing time is 55 ~ 65 minutes; Silk screen printing back of the body paint also baking and curing forms back of the body paint protective layer 4, curing temperature controls at 135 ~ 145 degrees Celsius, curing time is 40 minutes, to eliminate electric leakage and spread of voltage hidden danger, back of the body paint protective layer 4 makes back of the body paint protective layer 4 reliably can starch back electrode 3 by coated carbon than the large 1mm object of carbon slurry back electrode 3 surrounding;
Back electrode is drawn
At back of the body paint opening 4-1 place silk screen printing copper slurry, and baking and curing forms copper starches electrode 5, is cured in two steps, first 75 ~ 85 degrees Celsius of lower constant temperature 75 ~ 85 minutes, and then raised temperature to 145 ~ 155 degree Celsius, constant temperature 35 ~ 45 minutes.Wherein back of the body paint opening 4-1 length and width are 1.8x0.7mm, and copper slurry electrode 5 length and width are 2.9x1.4mm, the copper of all element cells can be made to starch electrode 5 adhesive force and reach 0.6 kilogram.Finally cut, by test stone test, qualified rear packaging warehouse-in.
Embodiment 2 making step is identical with embodiment 1.Only change the technological parameter in water cleaning link:
The transparent conducting glass corroded is put into sodium hydroxide solution and removes acid-proof ink, and rinse well with running water, then the mixed solution ITO transparent conducting glass removing acid-proof ink being put into NaOH and sodium phosphate carries out oil removing, the weight proportion of mixed solution is water: NaOH: sodium phosphate=150:2.0:5.0, the ito glass removing acid-proof ink is put into the solution prepared, soak 10 minutes, solution temperature controls at 45 ~ 50 degrees Celsius;
Embodiment 3
Making link is identical with embodiment 1.Only change the technological parameter of ultrasonic cleaning link:
The cleaning fluid that ITO transparent conducting glass after oil removing puts into unique formula is carried out ultrasonic cleaning, cleaning fluid weight proportion is water: cleaning material=1200:8.0, ito glass after deoiling is put into the solution prepared, ultrasonic cleaning 80 minutes, solution temperature controls at 45 ~ 60 degrees Celsius, rear cleaning is carried out afterwards with automatic rinser and pure water, and stand-by through air knife drying; Embodiment 4 making step is identical with embodiment 1.Only change
pIN amorphous silicon film depositstechnological parameter in rapid:
By rear cleaned ITO transparent conducting glass, to load in deposition clamp and put into vacuum chamber and carry out P, I, N amorphous silicon film deposits, and wherein P layer amorphous silicon adopts special deposition process parameters and raw material gas flow proportioning, and flowrate proportioning is: trimethyl borine: methane: silane: hydrogen=5:40:65:17, depositing temperature 200 ~ 250 degrees Celsius, deposition pressure 50 ~ 70Pa, discharge power 80 ~ 90W, sedimentation time 85 ~ 95 seconds;
Embodiment 5
Making step is identical with embodiment 1, only change back electrode formed in technological parameter: successively silk screen printing carbon slurry and baking and curing become carbon starch back electrode 3, curing temperature controls at 145 ~ 155 degrees Celsius, curing time is 55 ~ 65 minutes, silk screen printing back of the body paint also baking and curing forms back of the body paint protective layer 4, curing temperature controls at 135 ~ 145 degrees Celsius, curing time is 50 minutes, for eliminating electric leakage hidden danger, back of the body paint protective layer 4 0.6mm larger than carbon slurry back electrode 3 surrounding, make back of the body paint protective layer 4 reliably can starch back electrode 3 by coated carbon, as shown in Figure 5;
back electrode is drawn as shown in Figure 7.
At back of the body paint opening 4-1 place silk screen printing copper slurry, and baking and curing forms copper starches electrode 5, is cured in two steps, first 75 ~ 85 degrees Celsius of lower constant temperature 75 ~ 85 minutes, and then raised temperature to 145 ~ 155 degree Celsius, constant temperature 35 ~ 45 minutes.Wherein back of the body paint opening 4-1 length and width are 2.0x0.9mm, and copper slurry electrode length 5 is wide is 3.0x1.8mm, the copper of all element cells can be made to starch electrode 5 adhesive force and reach more than 0.6 kilogram.Finally cut, by test stone test, qualified rear packaging warehouse-in.
Embodiment 6
See accompanying drawing 8 ~ 11:
This embodiment example is circular non-crystal silicon solar cell, is mainly used in solar energy wrist-watch, is produced as follows:
electrode pattern before preparation
On the ZnO transparent conducting glass of 356x406 square millimeter, according to the figure of non-crystal silicon solar cell needs, (element cell is circular, be composed in series by four single batteries, each single battery is circular shape, centre is circular transparent window, whole ZnO transparent conducting glass is of a size of periodic array arrangement element cell using element cell) adopt acid-proof ink as mask, wet chemical etching technique ZnO nesa coating, electrode 1D before formation ZnO nesa coating, the ZnO nesa coating of surrounding retains, before adjacent segments ZnO nesa coating, the width of interelectrode shielding wire 1D-1 is 0.6mm, wherein insulated wire 1D-2, width 0.3mm to prevent from when cutting electrode and back electrode before ZnO nesa coating to overlap to cause short circuit.
Except acid-proof ink
Then remove acid-proof ink, after oil removing and ultrasonic cleaning, then clean with automatic rinser and pure water, and stand-by through air knife drying;
PIN amorphous silicon-based film deposits
by cleaned ZnO transparent conducting glass, to load in deposition clamp and put into vacuum chamber using plasma chemical vapour deposition technique and carry out PIN amorphous silicon-based film deposition, wherein N is N-type silica (SiO
x), to increase the reflection to short-wave band light, improve the short circuit current of laminated cell.N-type silica (SiO
x) deposition gases flow-rate ratio be: CO
2: SiH
4=0.5, radio-frequency power supply discharge power 90W, depositing temperature 220 degrees Celsius;
Laser grooving and scribing
adopt green laser grooving and scribing amorphous silicon-based film, form the laser drilling score line 2D-1 connecting adjacent two joint single batteries, often restrainting laser power is 0.5 watt, laser grooving and scribing live width 0.2mm, while delineation, carry out powerful dust suction, preventing the amorphous silicon-based film chip formed because of delineation to be scattering into laser drilling score line affects battery performance;
preparation composite back electrode
Adopt planar magnetic control sputtering method sputter ZnO film successively, silverskin and monel film, thickness is respectively 100nm, 80nm and 120nm, forms composite back electrode 3D, to increase the reflection to light, improves battery conversion efficiency.
Laser runs through delineation shielding wire 3D-1
green laser is adopted to run through delineation amorphous silicon-based film 2D and composite back electrode 3D, form the shielding wire 3D-1 between joint and joint, often restraint laser power be 1.0 watts and adjust laser frequency, laser grooving and scribing live width 0.5mm, while delineation, carry out powerful dust suction, preventing the amorphous silicon-based film chip formed because of delineation to be scattering into shielding wire affects battery performance;
Form transparent window
Adopt laser grooving and scribing method design to be needed the amorphous silicon-based film on transparent region and composite back electrode to remove, form transparent window, often restraint laser power 7W, infrared laser wavelength is 1064nm.
Silk screen printing back of the body paint also baking and curing forms back of the body paint protective layer 4D, and curing temperature controls at 135 ~ 145 degrees Celsius, and curing time is 40 minutes, and the back of the body paints the use that opening 4D-1 is welding positive and negative lead wires;
Finally cut, by test stone test, qualified rear packaging warehouse-in.
Embodiment 7
This example is flexible amorphous silicon and amorphous silicon germanium lamination solar cell, sees accompanying drawing 12 to 17 figure:
Flexible substrate first time punching
On the polyimide flex substrate 6R of 356x406 square millimeter, according to the figure of non-crystal silicon solar cell needs, (in this example, be divided into 40 joints along width 566mm direction decile, whole element cell is made up of 40 single battery inside.Each element cell is rectangular shape.) dual-side of broad ways along going out to carry out first time punching apart from edge 10mm, as pod apertures 6R-1, aperture 2.5mm, adjacent holes spacing 9mm, and totally dry up by pure water rinsing;
Preparation composite back electrode 3R
adopt planar magnetic control sputtering method front continuous sputtering aluminium film on the polyimide flex substrate of punching, silverskin and ITO nesa coating, as composite back electrode 3R, to increase the reflection to incident light; And jet-plating metallization aluminium film 7R overleaf;
Second time punching
The polyimide flex substrate of jet-plating metallization film is carried out second time punching along its length, as the hole 3R-5 that confluxes, aperture 1.5mm, adjacent holes spacing 5mm, and clean and dry up by pure water rinsing;
vapour deposition photoelectric conversion layer
The polyimide flex substrate of second time punching to be loaded in deposition clamp and put into vacuum chamber using plasma chemical vapour deposition technique and carry out continuous two sub-battery N1, I1, P1 and N2, I2, P2 silica-base film deposits, form amorphous silicon amorphous silicon germanium laminated cell opto-electronic conversion layer main body 2R, wherein I1 is intrinsic amorphous silicon germanium film, and N1 is N-type amorphous silicon film, P1 is P-type non-crystalline silicon film, I2 is intrinsic amorphous silicon film, and P2 is P-type non-crystalline silicon film, and N2 is N-type silica (SiO
x), to increase the reflection to short-wave band light, improve the short circuit current of laminated cell.N-type silica (SiO
x) deposition gases flow-rate ratio be: CO
2: SiH
4=0.4, radio-frequency power supply discharge power 90W, depositing temperature 200 degrees Celsius;
Planar magnetic control sputtering
Planar magnetic control sputtering method is adopted on the polyimide flex substrate having deposited silica-base film, to spatter coated ITO (Indium Tin Oxide) transparent conductive film as front electrode 1R, at substrate back sputter layer of metal aluminium film to form the intraconnection of both positive and negative polarity;
Adopt green laser by ITO nesa coating, all silica-base film layers and composite back electrode layer run through delineation and form shielding wire 3R-6, the aluminium film at the back side is carried out dislocation delineation by respective graphical simultaneously and form shielding wire 7R-1, the final element cell forming adjacent single battery internal series-connection.Often restrainting laser power is 0.6 watt, and laser grooving and scribing isolation live width 0.5mm, carries out powerful dust suction while delineation, prevents the amorphous silicon-based film chip formed because of delineation to be scattering into laser and beats score line and affect battery performance;
Ready-made element cell is coated with tin band positive and negative electrode is drawn 5R, and spread EVA(ethylene-vinyl acetate copolymer in its front) 9R and ETFE(ethylene-tetrafluoroethylene copolymer) 8R, lay EVA(ethylene-vinyl acetate copolymer overleaf) 9R and PET(PETG) 4R, then put into laminating machine and carry out laminating packaging, laminating temperature 140 degrees Celsius, lamination times 50 minutes.Carry out deburring after lamination, detect, so far all manufacturing process completes.
Below by reference to the accompanying drawings the embodiment of the invention is explained in detail, but the invention be not limited to above-described embodiment, those of ordinary skill in the art possess ken in all right, under the prerequisite not departing from the invention aim, make various change.
Claims (17)
1. a silicon-based film solar cells, comprises substrate, front electrode,
pINphotoelectric conversion layer and back electrode, it is characterized in that said front electrode is electrode pattern array before nesa coating, at least comprise the one in ITO, ZnO, graphene transparent conductive film, said front electrode pattern array is coated on transparent substrate, comprises the edge of substrate; Said PIN photoelectric conversion layer is silica-based amorphous silicon layer, and front electrode pattern array also comprises the insulated wire of anti-creeping shielding wire or front electrode edge, the various through holes of through PIN amorphous silicon layer; The back electrode of said PIN amorphous silicon N layer is the one that composition metal back electrode or carbon starch in electrode; Said carbon slurry electrode is the PIN amorphous silicon N layer back electrode having back of the body paint protective layer, it is drawn in back of the body paint protective surface and carbon slurry electrode surface that copper slurry electrode covers back of the body paint protective layer opening part, and the adhesive force starching electrode to strengthen copper prevents rete from coming off.
2. silicon-based film solar cells as claimed in claim 1; it is characterized in that said the back of the body paint protective layer expose carbon slurry electrode surface on draw copper slurry electrode refer to the back of the body paint protective layer reserve opening part prepare one deck copper slurry electrode layer; and copper slurry electrode area is certain value; strengthen copper slurry electrode and paint protective layer opening part peripheral contact face with the back of the body; relative reduction copper slurry electrode and carbon starch the contact-making surface of electrode, make its copper starch electrode adhesion and reach more than 0.6 kilogram.
3. silicon-based film solar cells as claimed in claim 1, it is characterized in that electrode pattern array before said nesa coating, comprise the front electrode of PIN amorphous silicon P layer, the front electrode of element cell, have anti-creeping shielding wire between its adjacent segments, its live width scope is 0.3mm ~ 0.6mm.
4. silicon-based film solar cells as claimed in claim 1, is characterized in that said carbon slurry electrode is the PIN amorphous silicon N layer back electrode having back of the body paint protective layer, and the carbon slurry electrode layer of said N layer back electrode covers completely by carrying on the back paint protective layer.
5., as the silicon-based film solar cells in claim 1-4 as described in any one, it is characterized in that said front electrodes conduct figure comprises square, circular, annular and distortion, said substrate is hard substrate glass or soft substrate.
6. silicon-based film solar cells as claimed in claim 5, it is characterized in that said front electrodes conduct figure is circular non-opaque conductive film layer or annular transparent conductive film layer, this rete is the front electrode of the front electrode of PIN amorphous silicon layer, element cell.
7. silicon-based film solar cells as claimed in claim 6, it is characterized in that said front electrodes conduct figure is circular non-opaque conductive film layer, before its adjacent segments nesa coating, have shielding wire between electrode, before before circular non-opaque conducting film is saturating, electrode rim has insulated wire to prevent, electrode hyaline membrane overlaps short circuit because cutting with back electrode.
8. silicon-based film solar cells as claimed in claim 6, it is characterized in that said front electrode is the PIN amorphous silicon-based film solar cell of circular non-opaque conducting film, its battery center has transparent window or transparent window at its arbitrary region.
9. silicon-based film solar cells as claimed in claim 1, is characterized in that the various through holes of said through PIN amorphous silicon layer are the score line that laser drilling is formed, to connect positive and negative electrode channels in series between adjacent single battery.
10. silicon-based film solar cells as claimed in claim 9, is characterized in that the laser incising line of said through PIN amorphous silicon layer is close in the shielding wire position of above said front electrode leakproof.
11. 1 kinds of silicon-based film solar cells preparation methods, it is characterized in that with electrode pattern array before electrically conducting transparent film preparation, nesa coating at least comprises the one in ITO, ZnO, graphene transparent conductive film, is saidly transparently coated on transparent substrate, comprises the edge of substrate; Said PIN photoelectric conversion layer is silica-based amorphous silicon layer, and front electrode pattern array also comprises anti-creeping shielding wire, and graphic array also comprises the various through holes of through PIN amorphous silicon layer; Its preparation method comprises: adulterate to the P layer of PIN amorphous silicon, adopts flowrate proportioning method to control silane and trimethyl borine flowrate proportioning, makes the dopant ratio of boron be less than 1%, to reduce the inner impurity defect density of p layer, reduces leakage current;
Eliminate PIN amorphous silicon layer surface pit, comprise and adopt silk screen printing to prepare electrode pattern before nesa coating; Adopt
Cleaning, comprises water cleaning, Ultrasonic Cleaning, and after wet etching ITO film, preparation cleaning solution and matting, clean the dirty of ITO nesa coating surface;
Prevent from copper from starching electrode film layer to come off, reserve opening part at back of the body paint protective layer and make one deck copper slurry electrode layer, copper slurry electrode area is kept to be certain value at it, strengthen copper slurry electrode and paint protective layer opening part peripheral contact face with the back of the body, the contact area that relative copper slurry electrode and carbon starch electrode reduces, and copper slurry electrode adhesion significantly increases;
Anti-creeping method: comprise insulation shielding wire, makes the isolation live width of the front electrode of front electrode pattern ito film be 0.3mm ~ 0.6mm.
12. silicon-based film solar cells preparation methods as claimed in claim 11, is characterized in that said anti-creeping method comprises:
Electrode pattern before selecting ITO nesa coating to do;
On ITO transparent conducting glass, silk screen printing one deck acid-proof ink makes mask layer, forms electrode before required ITO, before adjacent segments nesa coating, establish certain distance between electrode by wet chemical etching technique method, comprises shielding wire or insulation isolated area.
13. silicon-based film solar cells preparation methods as claimed in claim 11, it is characterized in that said elimination PIN amorphous silicon layer surface pit method comprises the mixed solution adopting NaOH and sodium phosphate, weight proportion is water: NaOH: soak 2 ~ 10 minutes in sodium phosphate=135 ~ 155:1 ~ 3:3 ~ 5, solution temperature controls at 45 ~ 50 degrees Celsius.
14. silicon-based film solar cells preparation methods as claimed in claim 13, is characterized in that said elimination PIN amorphous silicon layer surface pit method, comprise further
Ultrasonic cleaning, ultrasonic cleaning liquid adopts weight proportion water: cleaning material=1200 ~ 1400:6 ~ 8, ultrasonic cleaning 40 ~ 80 minutes, solution temperature controls at 45 ~ 60 degrees Celsius.
15. silicon-based film solar cells preparation methods as claimed in claim 11, it is characterized in that the leakage current of said reduction non-crystal silicon solar cell, the raw material gas flow proportioning of the deposition process parameters that P layer amorphous silicon adopts, flowrate proportioning is: trimethyl borine: methane: silane: hydrogen=5 ~ 7:30 ~ 40:60 ~ 65:15 ~ 17, and wherein the concentration of trimethyl borine is trimethyl borine: trimethyl borine+silane=3%.
16. silicon-based film solar cells preparation methods as claimed in claim 11, is characterized in that the deposition process parameters of said P layer amorphous silicon is depositing temperature 225 degrees Celsius, deposition pressure 60Pa, discharge power 85W.
17. silicon-based film solar cells preparation methods as claimed in claim 11, it is characterized in that said PIN amorphous silicon is lamination N-type amorphous silicon, can also be binode with superimposed layer N-type silica (SiOx), the reflection to short-wave band light can be increased, improve short wave response.
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| CN109256432A (en) * | 2018-10-18 | 2019-01-22 | 广东汉能薄膜太阳能有限公司 | A kind of hull cell and preparation method thereof |
| CN111599669A (en) * | 2020-05-12 | 2020-08-28 | 西安工业大学 | Method for manufacturing ohmic electrode suitable for heating coating material |
| CN112582493A (en) * | 2020-12-11 | 2021-03-30 | 中国科学院大连化学物理研究所 | Four-quadrant illumination sensor and preparation method thereof |
| CN113421936A (en) * | 2021-05-12 | 2021-09-21 | 深圳市创益科技发展有限公司 | Synergistic type low-light amorphous silicon thin-film solar cell |
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| CN111599669A (en) * | 2020-05-12 | 2020-08-28 | 西安工业大学 | Method for manufacturing ohmic electrode suitable for heating coating material |
| CN111599669B (en) * | 2020-05-12 | 2023-01-31 | 西安工业大学 | Method for manufacturing ohmic electrode suitable for heating coating material |
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