CN101789458A - Variable band gap double-side transparent electrode thin film solar battery - Google Patents
Variable band gap double-side transparent electrode thin film solar battery Download PDFInfo
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- CN101789458A CN101789458A CN201010131507A CN201010131507A CN101789458A CN 101789458 A CN101789458 A CN 101789458A CN 201010131507 A CN201010131507 A CN 201010131507A CN 201010131507 A CN201010131507 A CN 201010131507A CN 101789458 A CN101789458 A CN 101789458A
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a kind of variable band gap double-side transparent electrode thin film solar battery, comprise transparent substrate, side at transparent substrate is provided with first transparent conductive electrode, is provided with photoelectric conversion unit 1 above first transparent conductive electrode, is provided with second transparent conductive electrode above photoelectric conversion unit.Be provided with the 3rd transparent conductive electrode at the substrate opposite side, on the 3rd transparent conductive electrode, be provided with photoelectric conversion unit 2, on photoelectric conversion unit 2, be provided with the 4th transparent conductive electrode.Photoelectric conversion unit that the present invention adopts 1 has different band gap with photoelectric conversion unit 2 and distributes, and with the different spectral response scope of correspondence, improves electricity conversion.Simultaneously, because the interaction of two photoelectric conversion units has up and down improved its transformation efficiency to a great extent.The present invention makes the two-sided light that is subjected to of solar cell, has significantly improved the light-receiving area of solar cell, and the variation of this structure can make the solar cell level that energy output increase 10% is installed, and energy output vertically is installed is increased 34%.
Description
Technical field
The present invention relates to field of thin film solar cells, especially a kind of variable band gap double-side transparent electrode thin film solar battery.
Background technology
Photovoltaic industry will be hopeful to solve the energy and environment problem that we exist now.Is the par online and reach this target to the requirement of solar power generation.Implement in the production of solar cell, need lower cost and the transformation efficiency of Geng Gao exactly.Thin-film solar cells is preponderated in the development of solar cell because of lower cost, yet lower transformation efficiency remains its principal element as the social development main force energy of restriction.
In order to improve the transformation efficiency of thin-film solar cells, industry has been carried out a large amount of technological innovations, as patent of invention number be 200720172723.5 " a kind of lamination solar cell ", lamination photoelectric conversion unit structure by changing traditional series connection, the mode that adds transparency electrode in the centre make it to become parallel connection, have solved the problem of electron current coupling.Improved the power output of solar cell.In the prior art, it is the two-layer of 1.0ev. and 1.7ev that two unit the CIGS lamination solar cell that also have are made band gap merely, then the trial of machinery stack.These schemes can only receive sunlight by single face owing to be provided with opaque metal electrode, do not make full use of solar energy.
Summary of the invention
Goal of the invention: technical problem to be solved by this invention is at the deficiencies in the prior art, and a kind of variable band gap double-side transparent electrode thin film solar battery is provided.
Technical scheme: the invention discloses a kind of variable band gap double-side transparent electrode thin film solar battery, comprise transparent substrate, be provided with the sub-battery unit of forming by first transparent conductive electrode, the photoelectric conversion unit of above first transparent conductive electrode, establishing, second transparent conductive electrode above photoelectric conversion unit, established 1 in a side of transparent substrate.The opposite side of described transparent substrate is provided with the sub-battery unit of being made up of the 3rd transparent conductive electrode, photoelectric conversion unit and the 4th transparent conductive electrode 2.The photoelectric conversion unit of described substrate both sides is according to being subjected to the difference of light situation to be adjusted into the different band gap structure, the sunny slope band gap is bigger, bias toward the short ruddiness visible light in addition of absorbing wavelength, the shady face band gap is less, lays particular emphasis on longer ruddiness of absorbing wavelength and infrared spectrum.Wherein according to the difference of using photoelectric material, the distribution of each photoelectron unit band gap can distribute for discrete type point, also can be that the continous way line distributes, and every layer of set band gap numerical value can have the overlay region, also non-overlapped district can be arranged.
As a preferred version of the present invention, also can establish the first sub-battery of forming by first transparent conductive electrode, first photoelectric conversion unit, second transparent conductive electrode in a side of transparent substrate, on second transparent conductive electrode of the first sub-battery, establish the transparent insulation rete, on the transparent insulation rete, establish the second sub-battery that constitutes by the 3rd transparent conductive electrode, second photoelectric conversion unit, the 4th transparent conductive electrode then again, form the transparent two sides battery.
Wherein insulating barrier if higher for conventional light transmittance, contact with the transparency electrode interface good insulation performance film both can, as Si
3N
4, SiO
2
Wherein photoelectric conversion unit can be made of in amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, the amorphous mercury cadmium telluride etc. one or more.
Wherein photoelectric conversion unit can be unijunction or multijunction structure
Electrically conducting transparent any one in FTO film, ITO film or the ZAO film very wherein.
Wherein transparent substrate can be made by in glass, macromolecular material, the plastics any one.
The present invention is by the change to film solar battery structure, and the light-receiving area of solar cell when improving the solar cell transformation efficiency, increases considerably the generating efficiency on the solar cell unit are on the expansion unit are.Simultaneously, the present invention has given prominence to the characteristics of thin-film solar cells light transmission, make its operation that can not remove effective generating area increase light transmittance directly be used as the glass curtain wall material, when the saving processing cost increases effective generating area, can also further utilize the light in the building, the low light level effect advantage of performance thin-film solar cells increases generating efficiency.At CIGS solar cell (solar film battery Cu (InGa) Se
2), it is bad that the present invention can solve between Mo substrate and the CIGS adhesive force, influences the problem of collected current, under the situation that does not change the generator unit structure, can further increase its generating efficiency.Simultaneously, for general lamination solar cell, accomplish after binode or three knots, increasing footing more is not too big to the meaning that improves transformation efficiency, but for the present invention, because two solar cells are not only independent but also mutual associated existence up and down, therefore, two knots can be made lamination respectively up and down, and the transformation efficiency to solar cell has outstanding contributions simultaneously, form four knot or six joint solar cells on the practical significance.Owing to photoelectric conversion unit is carried out the band gap combination, can make the band gap distribution curve of photoelectric conversion unit more meet the distribution of solar spectrum, thereby increase the utilization ratio of solar energy.Improve electricity conversion.
The sensitive surface of battery is two-sided among the present invention, light can be subjected to the Window layer of the solar cell of light to enter positive solar cell converting unit by the front, also can enter the solar cell converting unit at the back side by the Window layer at the back side, the light-receiving area of solar cell has increased one times, because thin-film solar cells has the good low light level, back side battery is subjected to light to have good generating efficiency equally.Simultaneously, when the light of positive incident is not absorbed, when inciding substrate, a part is reflected, and is absorbed once more by the absorptive unit in front, and what do not absorb is not appeared by the front window layer.Another part is refracted among the solar cell converting unit at the back side, is absorbed once more by the absorptive unit at the back side, and what do not absorb is not appeared by back side Window layer.By the light of back surface incident, after the same absorption through back side photoelectric conversion layer, residual ray is absorbed by back side photoelectric conversion layer once more in the partial reflection of substrate place, and refracted portion is injected the front, is absorbed by the front photoelectric conversion layer.
Useful achievement: a kind of transparent conducting electrode film solar cell disclosed in this invention, adopt the defective of the opaque substrate and the opaque metallic conduction utmost point at the conventional films solar cell, adopted transparent substrate and conductive electrode, greatly improved solar cell solar energy utilization rate and conversion efficiency.The film photoelectric converting unit of shared transparent substrate wherein, the front and back electrode of each photoelectric conversion unit is all the transparency electrode of broad-band gap.The present invention has significantly improved the sensitive surface of solar cell, simultaneously, because the interaction of two photoelectric conversion units up and down, improved its transformation efficiency to a great extent, and for the adjustment of photoelectric conversion unit band gap distributed architecture, make it more approach ideal structure, the incident solar energy utilization rate is further improved, further improved its transformation efficiency.The generated power of solar cell that the variation of this structure can make level install increases 10%, energy output vertically is installed is increased 34%.Simultaneously, embody the light transmission of hull cell, be more suitable for BIPV.This two-sided battery is used on the glass curtain wall, and can make full use of indoor light evening, and the low light level effect of performance hull cell makes on its energy output basis in front and improves 10% again.
Description of drawings
Below in conjunction with the drawings and specific embodiments the present invention is done further to specify, above-mentioned and/or otherwise advantage of the present invention will become apparent.
Fig. 1 is an illustrative view of functional configuration of the present invention.
Fig. 2 be the embodiment of the invention 1 non-crystalline/micro-crystalline silicon laminated amorphous germanium silicon structure schematic diagram.
Fig. 3 is embodiment of the invention 2CIGS/Hg
1-xCd
xThe Te structural representation.
Fig. 4 is the structure that separates with transparent insulating layer between substrate, photoelectric conversion unit for the embodiment of the invention 3 bottoms.
Embodiment:
As shown in Figure 1, the invention discloses a kind of transparent conducting electrode film solar cell, comprise transparent substrate 1, side at transparent substrate 1 is provided with first transparent conductive electrode 2, above first transparent conductive electrode 2, be provided with photoelectric conversion unit 301, above photoelectric conversion unit 301, be provided with second transparent conductive electrode 4.The opposite side of described transparent substrate 1 is provided with the 3rd transparent conductive electrode 5, is provided with photoelectric conversion unit 302 below the 3rd transparent conductive electrode 5, and the 4th transparent conductive electrode 6 is arranged below photoelectric conversion unit 302.Described first transparent conductive electrode, second transparent conductive electrode, the 3rd transparent conductive electrode and the 4th electrically conducting transparent be ZAO (zinc oxide aluminum) film very, also can be FTO (tin ash) film or ITO (tin indium oxide) film or wherein any one.Described photoelectric conversion unit can be the unijunction structure, can certainly be set to multijunction structure according to concrete operating position.Described photoelectric conversion unit is any one in silicon based thin film battery, CIS, CIGS, GaAs, the cadmium telluride.Described transparent substrate is made by in glass, macromolecular material, the plastics any one.Wherein the band gap of the photoelectric conversion unit of substrate levels is different, can be respectively at the solar cell of a certain wave band, thereby increased the utilization ratio of solar cell.
Among the present invention, the extraction electrode of substrate both sides is drawn respectively, and when substrate was large tracts of land, the battery of both sides can adopt inline structure and outreach a kind of in the structure.Two sides are looked and are required high voltage or big electric current to adopt series connection or in parallel.Extraction electrode is silver electrode or aluminium electrode, adopts the preparation of printing or evaporation.Two transparent conductive electrode solar cells of substrate both sides can be directly to be prepared on the substrate, also can be preparations separately earlier, are bonded to on-chip more jointly.
Embodiment 1:
As shown in Figure 2, the invention discloses a kind of variable band gap double-side transparent electrode thin film solar battery, comprise transparent toughened glass substrate 1, establish electrically conducting transparent ITO film 2 on the substrate, establish amorphous germanium silicon PIN knot 701 on the electrically conducting transparent ITO film 2, establish amorphous silicon PIN knot 702 again, establish electrically conducting transparent ITO film 4 on the amorphous silicon PIN knot 702.The substrate opposite side is established transparency electrode ITO film 5, and transparency electrode ITO film 5 is divided into photoelectric conversion unit microcrystal silicon PIN knot 703, and photoelectric conversion unit microcrystal silicon PIN ties 703 belows electrically conducting transparent ITO film 6 is set.
To tie 702 band gap be 1.8ev to amorphous silicon PIN in the present embodiment, mainly absorbs blue light, and the amorphous germanium silicon band gap is 1.6ev, mainly absorbs green glow.Microcrystal silicon PIN ligament crack is 1.1ev, main absorptive red light and infrared light.Arrange through such change band gap, this battery enlarges the response range of solar spectrum, and its optoelectronic transformation efficiency is improved.In the middle of reality was used, over against high light, the microcrystal silicon one side more helped bringing into play its characteristic separately back to sunlight, improves the transformation efficiency of solar cell with the lamination one side.Simultaneously, because microcrystal silicon layer prepares separately at the substrate opposite side, do not exist interface coupling and process conditions to influence the factor of other each layer, can adopt various suitable technologies, solve the slow excessively problem of its speed of growth easily, simultaneously, also make high-quality PIN knot easily.
The present invention has increased the light-receiving area of solar cell greatly, and level installation generating efficiency can improve 10% usually, and vertical installation can improve 34%, if modes such as consideration employing direct reflection make the back side be subjected to light, generating efficiency can be higher.In addition, this two-sided battery is used as glass curtain wall, and can make full use of indoor light evening, utilizes the low light level effect of hull cell, will improve 10% again on the generating efficiency basis in front.
Two-side transparent battery among the present invention, because there is not the total reflection of opaque back electrode, its light transmission is fine, can be directly used in glass curtain wall, needn't the sacrificial section area guarantees the light transmission of curtain wall.Both saved and destroyed the part rete or solar cell is cut the operation that assembly is made in slivering again, saved cost, and increased again and effectively utilized area, increased generating efficiency.
The present invention is equivalent to the single face lamination solar cell, has solved the unmatched problem of series connection multijunction cell electric current simultaneously, has improved the utilization ratio of generating.
Double-sided solar battery among the present invention can be when assembly is installed allows the back side also be subjected to light with the same intensity of sensitive surface by direct reflection or refraction cheaply, with the front close transformation efficiency is arranged, and can further reduce the cost of unit of electrical energy.
Embodiment 2:
As shown in Figure 3, the invention discloses another kind of variable band gap double-side transparent electrode thin film solar battery, its structure is as follows, on transparent substrate, establish ZAO transparent conductive electrode 2, on transparent conductive electrode 2, establish CIGS photoelectric conversion unit 801, guarantee cigs layer band gap curved arrangement of gradients in 1.7ev～1.0ev scope from top to bottom, wherein the band gap near the transition zone place is 1.7ev, and the band gap of close substrate is 1.0ev.Above CIGS photoelectric conversion unit 801, establish ZAO transparent conductive electrode 4.Establish transparent conductive electrode 5 earlier at the substrate opposite side, establish amorphous mercury cadmium telluride photoelectric conversion unit 802 on the transparent conductive electrode 5, its band gap is distributed as from nearly substrate to sensitive surface 1.1ev～curved arrangement of gradients of 0.13ev scope, establishes ZAO transparent conductive electrode 6 on 802 again.
Two kinds of used in present embodiment photoelectric conversion units all have transformable band gap, wherein the CIGS photoelectric conversion unit is in its band gap variation scope, visible light is partly had very good absorptivity and photoelectric conversion efficiency, simultaneously, infrared ray is also had the sink effect of part.And amorphous mercury cadmium telluride photoelectric conversion unit can obtain by adjusting its compound structure below 1.1ev.Has best sink effect at the 0.13ev place for the infrared ray of room temperature object radiation (its energy is promptly about 0.13ev).Such structure arrangement can guarantee that this solar cell has the wideest spectrum and utilizes effect and the strongest low light level effect, in theory, even in dark fully environment, also can produce the part electric energy.Simultaneously, these two kinds of heterogeneous photoelectric conversion units are arranged in the both sides of transparent substrate respectively, make them both can see through substrate and transparent conductive electrode interacts, have complementary advantages, can not produce defective or matching problem again because of heterogeneous connectivity problem.Simultaneously, the sub-battery of different open circuit voltages is directly connected, and will cause reducing transformation efficiency because electron current does not match and causes the photoelectric current in-fighting.Present embodiment has the advantage of overlapping thin film solar battery, does not but have because the current/voltage in-fighting problem that do not match and cause, and with respect to the laminated cell of same material and structure, its transformation efficiency is further enhanced.
Embodiment 3:
As shown in Figure 4, the invention discloses another kind of variable band gap double-side transparent electrode thin film solar battery, its structure is as follows, transparent glass substrate 1 at first is set, ITO first transparent conductive electrode 2 is set on glass substrate, on transparent conductive electrode 2, establish microcrystal silicon PIN knot 901, establish ZAO second transparent conductive electrode 4 on the microcrystal silicon PIN knot 901, establish transparent insulating layer 10 on the transparent conductive electrode, establish ZAO the 3rd transparent conductive electrode 5 on the insulating barrier 10, establish amorphous silicon PIN knot 902 on the transparent conductive electrode, establish ZAO the 4th transparent conductive electrode 6 on the amorphous silicon PIN knot 902.
In the present embodiment transparent substrate placed the below of solar cell, two sub-solar cells utilize the transparent insulation film to separate.Because each sub-battery is all used transparency electrode, so do not influence the interaction of its light transmission, two sub-photoelectric conversion units.Simultaneously, can utilize laser scoring to make two straton battery strings connection or be connected in parallel the installation of simplified assembly circuit.Another advantage is then because transparent substrates as a sensitive surface, only need increase a good sensitive surface of light transmittance again when forming assembly and get final product.
Two sub-photoelectric conversion units using among this embodiment, the upper strata is the amorphous silicon photoelectric conversion unit, band gap is arbitrary value between 1.5ev～1.8ev, mainly absorbs bluish-green spectrum.Lower floor is the microcrystal silicon photoelectric conversion unit, and its band gap is arbitrary value in 0.9～1.1ev, main absorptive red light and infrared band.
Equally; utilize the combination of other different band gap thin-film materials; can also design a lot of other structural similarities; the variable band gap double-side transparent electrode thin film solar battery of function admirable, the above only is a preferred implementation of the present invention, should be understood that; for those skilled in the art; under the prerequisite that does not break away from the principle of the invention, can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.The all available prior art of each part not clear and definite in the present embodiment is realized.
Claims (10)
1. variable band gap double-side transparent electrode thin film solar battery comprises transparent substrate, contains the first sub-battery unit (1) of first photoelectric conversion unit and contains the second sub-battery unit (2) of second photoelectric conversion unit, it is characterized in that,
The band gap of the photoelectric conversion unit in the described first sub-battery unit (1) and the second sub-battery unit (2) is different;
Wherein first photoelectric conversion unit of first of the sunny slope battery unit (1) is used for the visible light except that the short ruddiness of absorbing wavelength;
Second photoelectric conversion unit of the second sub-battery unit (2) of shady face is used for longer ruddiness of absorbing wavelength and infrared spectrum.
2. variable band gap double-side transparent electrode thin film solar battery according to claim 1 is characterized in that, the described first sub-battery unit (1) and the second sub-battery unit (2) lay respectively at the transparent substrate both sides.
3. variable band gap double-side transparent electrode thin film solar battery according to claim 2, it is characterized in that described first photoelectric conversion unit is made of one or several storehouses among amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, the amorphous HgCdTe;
Described second photoelectric conversion unit is made of one or several storehouses among amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, the amorphous HgCdTe.
4. variable band gap double-side transparent electrode thin film solar battery according to claim 2 is characterized in that, described first photoelectric conversion unit is unijunction or multijunction structure;
Described second photoelectric conversion unit is unijunction or multijunction structure.
5. variable band gap double-side transparent electrode thin film solar battery according to claim 2 is characterized in that, described electrically conducting transparent is any one in FTO film, ITO film or the ZAO film very.
6. variable band gap double-side transparent electrode thin film solar battery according to claim 2 is characterized in that, described transparent substrate is made by in glass, macromolecular material, the plastics any one.
7. variable band gap double-side transparent electrode thin film solar battery as claimed in claim 1, it is characterized in that, the described first sub-battery unit (1) and the second sub-battery unit (2) are positioned at a side of transparent substrate, between the described first sub-battery unit (1) and the second sub-battery unit (2) the insulation transparent thin layer are arranged.
8. variable band gap double-side transparent electrode thin film solar battery according to claim 7, it is characterized in that described first photoelectric conversion unit is made of one or more storehouses among amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, the amorphous HgCdTe;
Described second photoelectric conversion unit is made of one or more storehouses among amorphous silicon membrane, amorphous carbon silicon thin film, amorphous germanium silicon thin film, monocrystalline silicon thin film, polysilicon membrane, microcrystalline silicon film, Nano thin film, CIS, CIGS, CdTe, the amorphous HgCdTe.
9. variable band gap double-side transparent electrode thin film solar battery according to claim 7 is characterized in that, described electrically conducting transparent is any one in FTO film, ITO film or the ZAO film very.
10. variable band gap double-side transparent electrode thin film solar battery according to claim 7 is characterized in that, described transparent substrate is made by in glass, macromolecular material, the plastics any one.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102064221A (en) * | 2010-11-15 | 2011-05-18 | 北京航空航天大学 | Double-sided solar battery component |
| CN102339910A (en) * | 2011-09-27 | 2012-02-01 | 牡丹江旭阳太阳能科技有限公司 | Preparation method of amorphous silicon thin film solar cell module |
| CN102347712A (en) * | 2010-07-29 | 2012-02-08 | 太阳能科技有限公司 | Double-module optical energy generating set |
| CN103258889A (en) * | 2012-02-15 | 2013-08-21 | 杜邦太阳能有限公司 | Solar cell and manufacturing method of solar cell |
| CN103311363A (en) * | 2012-03-12 | 2013-09-18 | 杜邦太阳能有限公司 | Solar cell module and manufacturing method thereof |
| CN103972313A (en) * | 2014-05-07 | 2014-08-06 | 哈尔滨工业大学 | Two-sided solar cell and manufacturing method thereof |
| CN104377271A (en) * | 2014-10-22 | 2015-02-25 | 苏州瑞晟纳米科技有限公司 | Method for producing two-sided light absorption type chalcogenide thin-film solar module |
| CN104600146A (en) * | 2014-12-23 | 2015-05-06 | 江西科技学院 | Double-sided thin-film solar cell |
| CN107924933A (en) * | 2015-06-12 | 2018-04-17 | 牛津光电有限公司 | More knot photovoltaic devices |
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| CN1938866A (en) * | 2004-03-31 | 2007-03-28 | 罗姆股份有限公司 | Laminate type thin-film solar cell and production method therefor |
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| GB2405030A (en) * | 2003-08-13 | 2005-02-16 | Univ Loughborough | Bifacial thin film solar cell |
| CN1938866A (en) * | 2004-03-31 | 2007-03-28 | 罗姆股份有限公司 | Laminate type thin-film solar cell and production method therefor |
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Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102347712A (en) * | 2010-07-29 | 2012-02-08 | 太阳能科技有限公司 | Double-module optical energy generating set |
| CN102064221A (en) * | 2010-11-15 | 2011-05-18 | 北京航空航天大学 | Double-sided solar battery component |
| CN102339910A (en) * | 2011-09-27 | 2012-02-01 | 牡丹江旭阳太阳能科技有限公司 | Preparation method of amorphous silicon thin film solar cell module |
| CN103258889A (en) * | 2012-02-15 | 2013-08-21 | 杜邦太阳能有限公司 | Solar cell and manufacturing method of solar cell |
| CN103311363A (en) * | 2012-03-12 | 2013-09-18 | 杜邦太阳能有限公司 | Solar cell module and manufacturing method thereof |
| CN103972313A (en) * | 2014-05-07 | 2014-08-06 | 哈尔滨工业大学 | Two-sided solar cell and manufacturing method thereof |
| CN103972313B (en) * | 2014-05-07 | 2017-01-25 | 哈尔滨工业大学 | Two-sided solar cell and manufacturing method thereof |
| CN104377271A (en) * | 2014-10-22 | 2015-02-25 | 苏州瑞晟纳米科技有限公司 | Method for producing two-sided light absorption type chalcogenide thin-film solar module |
| CN104600146A (en) * | 2014-12-23 | 2015-05-06 | 江西科技学院 | Double-sided thin-film solar cell |
| CN107924933A (en) * | 2015-06-12 | 2018-04-17 | 牛津光电有限公司 | More knot photovoltaic devices |
| CN107924933B (en) * | 2015-06-12 | 2022-04-15 | 牛津光电有限公司 | Multi-junction photovoltaic device |
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