CN103037174B - 固态成像装置和其制造方法以及成像单元 - Google Patents

固态成像装置和其制造方法以及成像单元 Download PDF

Info

Publication number
CN103037174B
CN103037174B CN201210394766.3A CN201210394766A CN103037174B CN 103037174 B CN103037174 B CN 103037174B CN 201210394766 A CN201210394766 A CN 201210394766A CN 103037174 B CN103037174 B CN 103037174B
Authority
CN
China
Prior art keywords
light
shielding film
imaging device
solid
conductive material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210394766.3A
Other languages
English (en)
Chinese (zh)
Other versions
CN103037174A (zh
Inventor
北野良昭
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN103037174A publication Critical patent/CN103037174A/zh
Application granted granted Critical
Publication of CN103037174B publication Critical patent/CN103037174B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/153—Two-dimensional or three-dimensional array CCD image sensors
    • H10F39/1534—Interline transfer

Landscapes

  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN201210394766.3A 2011-10-07 2012-09-28 固态成像装置和其制造方法以及成像单元 Expired - Fee Related CN103037174B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011222743A JP2013084713A (ja) 2011-10-07 2011-10-07 固体撮像素子および製造方法、並びに撮像ユニット
JP2011-222743 2011-10-07

Publications (2)

Publication Number Publication Date
CN103037174A CN103037174A (zh) 2013-04-10
CN103037174B true CN103037174B (zh) 2018-08-28

Family

ID=48023609

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210394766.3A Expired - Fee Related CN103037174B (zh) 2011-10-07 2012-09-28 固态成像装置和其制造方法以及成像单元

Country Status (3)

Country Link
US (1) US9252173B2 (https=)
JP (1) JP2013084713A (https=)
CN (1) CN103037174B (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102776683B1 (ko) 2017-10-03 2025-03-07 소니 세미컨덕터 솔루션즈 가부시키가이샤 고체 촬상 소자, 고체 촬상 소자의 제조 방법 및 전자 기기
TWI785478B (zh) * 2020-08-17 2022-12-01 友達光電股份有限公司 指紋感測裝置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101446720A (zh) * 2007-11-27 2009-06-03 精工爱普生株式会社 液晶装置和电子仪器
CN101729797A (zh) * 2008-10-17 2010-06-09 索尼株式会社 固体摄像装置、照相机以及制造固体摄像装置的方法
CN101752398A (zh) * 2008-12-09 2010-06-23 索尼株式会社 固态成像器件及其制造方法

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3142327B2 (ja) * 1991-02-05 2001-03-07 株式会社東芝 固体撮像装置及びその製造方法
JPH04315474A (ja) * 1991-04-12 1992-11-06 Mitsubishi Electric Corp 固体撮像素子の製造方法
JP3134332B2 (ja) * 1991-04-15 2001-02-13 ソニー株式会社 固体撮像素子
JPH05167052A (ja) * 1991-12-16 1993-07-02 Sony Corp 固体撮像装置の製造方法
KR0171625B1 (ko) * 1992-02-20 1999-02-01 단죠 카즈마 고체촬상장치의 제조방법
DE69320113T2 (de) * 1992-05-22 1999-03-11 Matsushita Electronics Corp., Kadoma, Osaka Festkörper-Bildsensor und Verfahren zu seiner Herstellung
US5643232A (en) * 1996-01-19 1997-07-01 James P Villotti Jr PAP smear glove
JP4318007B2 (ja) * 1999-10-07 2009-08-19 富士フイルム株式会社 固体撮像素子
JP3753613B2 (ja) * 2000-03-17 2006-03-08 セイコーエプソン株式会社 電気光学装置及びそれを用いたプロジェクタ
WO2001081994A1 (en) * 2000-04-21 2001-11-01 Seiko Epson Corporation Electrooptic device, projection type display and method for manufacturing electrooptic device
JP4185678B2 (ja) * 2001-06-08 2008-11-26 株式会社日立製作所 液晶表示装置
JP4427949B2 (ja) * 2002-12-13 2010-03-10 ソニー株式会社 固体撮像素子及びその製造方法
WO2004079825A1 (ja) * 2003-03-06 2004-09-16 Sony Corporation 固体撮像素子及びその製造方法、並びに固体撮像素子の駆動方法
JP4652773B2 (ja) * 2004-11-05 2011-03-16 パナソニック株式会社 増幅型固体撮像装置
JP4643249B2 (ja) * 2004-12-22 2011-03-02 株式会社東芝 固体撮像装置
JP4867226B2 (ja) * 2005-07-27 2012-02-01 ソニー株式会社 固体撮像装置およびその製造方法、並びにカメラ
US7910964B2 (en) * 2005-08-30 2011-03-22 National University Corporation Shizuoka University Semiconductor range-finding element and solid-state imaging device
JP4330607B2 (ja) * 2005-12-26 2009-09-16 三洋電機株式会社 固体撮像装置
JP4586732B2 (ja) * 2006-01-06 2010-11-24 セイコーエプソン株式会社 電気光学装置及びその製造方法並びに電子機器
JP2009075207A (ja) * 2007-09-19 2009-04-09 Panasonic Corp フォトマスク及びそれを用いたパターン形成方法
JP5176453B2 (ja) * 2007-09-27 2013-04-03 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法及び撮像装置
JP5296406B2 (ja) * 2008-04-02 2013-09-25 パナソニック株式会社 固体撮像装置及びその製造方法
JP2009295918A (ja) * 2008-06-09 2009-12-17 Panasonic Corp 固体撮像装置及びその製造方法
JPWO2010103814A1 (ja) * 2009-03-11 2012-09-13 パナソニック株式会社 固体撮像装置
TWI373853B (en) * 2009-03-16 2012-10-01 Au Optronics Corp Active device array substrate and method for fabricating thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101446720A (zh) * 2007-11-27 2009-06-03 精工爱普生株式会社 液晶装置和电子仪器
CN101729797A (zh) * 2008-10-17 2010-06-09 索尼株式会社 固体摄像装置、照相机以及制造固体摄像装置的方法
CN101752398A (zh) * 2008-12-09 2010-06-23 索尼株式会社 固态成像器件及其制造方法

Also Published As

Publication number Publication date
US9252173B2 (en) 2016-02-02
US20130088713A1 (en) 2013-04-11
CN103037174A (zh) 2013-04-10
JP2013084713A (ja) 2013-05-09

Similar Documents

Publication Publication Date Title
US9882154B2 (en) Solid-state imaging element, production method thereof, and electronic device
US9559149B2 (en) Solid-state imaging device and electronic apparatus including a photoelectric conversion unit disposed between another photoelectric conversion unit and a photoelectric conversion film
US11302737B2 (en) Image sensor and electronic apparatus including the same
CN102917184B (zh) 摄像装置和摄像设备
US9888196B2 (en) Solid-state imaging element and driving method therefor, and electronic apparatus
CN113206118B (zh) 固态摄像元件、固态摄像元件的制造方法和电子装置
CN107425025B (zh) 固态成像装置和电子设备
US9070610B2 (en) Solid-state imaging device and electronic apparatus
US11812170B2 (en) Solid-state imaging element and electronic device
US8901696B2 (en) Solid-state imaging device and electronic apparatus
CN104469198A (zh) 固体摄像装置及其控制方法
TWI393252B (zh) 固態成像裝置，照相機，及製造固態成像裝置之方法
CN103208499A (zh) 固态成像器件和电子装置
US20160035779A1 (en) Imaging apparatus and imaging system
CN104701330A (zh) 固体摄像装置
KR101494093B1 (ko) 고체 촬상 장치
CN103037174B (zh) 固态成像装置和其制造方法以及成像单元
CN103081105B (zh) 图像拾取装置、图像拾取模块和照相机
CN101887902B (zh) 固体摄像器件和摄像装置
CN114697546B (zh) 拍摄系统
JP2011044542A (ja) 撮像装置及び固体撮像素子
JP2011066685A (ja) 固体撮像素子及びその駆動方法並びに撮像装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20160912

Address after: Kanagawa

Applicant after: SONY SEMICONDUCTOR SOLUTIONS Corp.

Address before: Tokyo, Japan

Applicant before: Sony Corp.

GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20180828

CF01 Termination of patent right due to non-payment of annual fee