CN103035501B - 一种避免空洞的多晶硅沟槽栅极的制备方法 - Google Patents
一种避免空洞的多晶硅沟槽栅极的制备方法 Download PDFInfo
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CN109920760B (zh) | 2017-12-12 | 2021-01-12 | 联华电子股份有限公司 | 半导体装置的形成方法 |
CN109148276A (zh) * | 2018-08-20 | 2019-01-04 | 上海华虹宏力半导体制造有限公司 | 提高深沟槽填充能力的方法 |
CN112951715B (zh) * | 2019-12-10 | 2022-11-22 | 芯恩(青岛)集成电路有限公司 | 沟槽栅结构及沟槽型场效应晶体管结构的制备方法 |
CN111180340B (zh) * | 2020-01-02 | 2021-02-02 | 杭州士兰微电子股份有限公司 | 沟槽栅mosfet功率半导体器件及其多晶硅填充方法和制造方法 |
CN111403282B (zh) * | 2020-01-02 | 2022-01-04 | 杭州士兰微电子股份有限公司 | 沟槽栅mosfet功率半导体器件及其多晶硅填充方法和制造方法 |
CN111192925B (zh) * | 2020-01-07 | 2021-12-31 | 杭州士兰微电子股份有限公司 | 沟槽栅mosfet功率半导体器件及其多晶硅填充方法和制造方法 |
CN111785629A (zh) * | 2020-06-28 | 2020-10-16 | 上海华虹宏力半导体制造有限公司 | 沟槽栅igbt器件的制作方法 |
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CN101106110A (zh) * | 2006-07-10 | 2008-01-16 | 中芯国际集成电路制造(上海)有限公司 | 闪存器件分离栅极的制造方法 |
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US7816729B2 (en) * | 2006-08-08 | 2010-10-19 | Fwu-Iuan Hshieh | Trenched MOSFET device with trenched contacts |
US7956411B2 (en) * | 2008-01-15 | 2011-06-07 | Fairchild Semiconductor Corporation | High aspect ratio trench structures with void-free fill material |
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