CN102993050A - 四脒基金属(iv)化合物及其在气相沉积中的用途 - Google Patents
四脒基金属(iv)化合物及其在气相沉积中的用途 Download PDFInfo
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- CN102993050A CN102993050A CN2012104614215A CN201210461421A CN102993050A CN 102993050 A CN102993050 A CN 102993050A CN 2012104614215 A CN2012104614215 A CN 2012104614215A CN 201210461421 A CN201210461421 A CN 201210461421A CN 102993050 A CN102993050 A CN 102993050A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 44
- 239000002184 metal Substances 0.000 title claims abstract description 43
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- 229910052757 nitrogen Inorganic materials 0.000 claims abstract description 50
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 12
- 239000010937 tungsten Substances 0.000 claims abstract description 12
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 11
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 11
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 11
- 239000011733 molybdenum Substances 0.000 claims abstract description 11
- 229910052718 tin Inorganic materials 0.000 claims abstract description 11
- 229910052770 Uranium Inorganic materials 0.000 claims abstract description 9
- 229910052758 niobium Inorganic materials 0.000 claims abstract description 9
- 239000010955 niobium Substances 0.000 claims abstract description 9
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims abstract description 9
- 150000004767 nitrides Chemical class 0.000 claims abstract description 8
- 239000011135 tin Substances 0.000 claims abstract description 5
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 14
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- 239000007787 solid Substances 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 7
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- 239000001257 hydrogen Substances 0.000 claims description 7
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- 239000001301 oxygen Substances 0.000 claims description 7
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- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 239000010936 titanium Chemical group 0.000 claims description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical group [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052707 ruthenium Inorganic materials 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 claims description 5
- 125000003282 alkyl amino group Chemical group 0.000 claims description 5
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
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- 125000000392 cycloalkenyl group Chemical group 0.000 claims description 4
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- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical group [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 4
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- SYQBFIAQOQZEGI-UHFFFAOYSA-N osmium atom Chemical group [Os] SYQBFIAQOQZEGI-UHFFFAOYSA-N 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical group [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052703 rhodium Inorganic materials 0.000 claims description 4
- 239000010948 rhodium Chemical group 0.000 claims description 4
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical group [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 claims description 4
- 239000010409 thin film Substances 0.000 claims description 4
- 229910052720 vanadium Inorganic materials 0.000 claims description 4
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical group [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 claims description 4
- 229910052684 Cerium Inorganic materials 0.000 claims description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 3
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical group [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 claims description 3
- 229910001882 dioxygen Inorganic materials 0.000 claims description 3
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- 230000008016 vaporization Effects 0.000 claims 3
- 125000003342 alkenyl group Chemical group 0.000 claims 2
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- 125000001183 hydrocarbyl group Chemical group 0.000 claims 2
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- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052726 zirconium Inorganic materials 0.000 abstract description 18
- 229910052735 hafnium Inorganic materials 0.000 abstract description 16
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 abstract description 15
- 229910052715 tantalum Inorganic materials 0.000 abstract description 9
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract description 9
- 150000002739 metals Chemical class 0.000 abstract description 5
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 abstract 1
- 238000006243 chemical reaction Methods 0.000 description 32
- YOUIDGQAIILFBW-UHFFFAOYSA-J tetrachlorotungsten Chemical compound Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 30
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 25
- UHOVQNZJYSORNB-MZWXYZOWSA-N benzene-d6 Chemical compound [2H]C1=C([2H])C([2H])=C([2H])C([2H])=C1[2H] UHOVQNZJYSORNB-MZWXYZOWSA-N 0.000 description 24
- 239000000243 solution Substances 0.000 description 21
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- 125000003739 carbamimidoyl group Chemical group C(N)(=N)* 0.000 description 19
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- 238000005160 1H NMR spectroscopy Methods 0.000 description 14
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- JMHYNOCZNRXMLN-UHFFFAOYSA-N n,n'-dimethylethanimidamide Chemical compound CNC(C)=NC JMHYNOCZNRXMLN-UHFFFAOYSA-N 0.000 description 9
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- MZRVEZGGRBJDDB-UHFFFAOYSA-N N-Butyllithium Chemical compound [Li]CCCC MZRVEZGGRBJDDB-UHFFFAOYSA-N 0.000 description 8
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- 229910052744 lithium Inorganic materials 0.000 description 8
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- IHJKBAFLNCXGLC-UHFFFAOYSA-N n,n'-diethylethanimidamide Chemical compound CCNC(C)=NCC IHJKBAFLNCXGLC-UHFFFAOYSA-N 0.000 description 5
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- 150000002902 organometallic compounds Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- 229920000570 polyether Polymers 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- NTTOTNSKUYCDAV-UHFFFAOYSA-N potassium hydride Chemical compound [KH] NTTOTNSKUYCDAV-UHFFFAOYSA-N 0.000 description 1
- 229910000105 potassium hydride Inorganic materials 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- FVSKHRXBFJPNKK-UHFFFAOYSA-N propionitrile Chemical compound CCC#N FVSKHRXBFJPNKK-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009257 reactivity Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000003870 refractory metal Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 125000002914 sec-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 238000004062 sedimentation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910001023 sodium amalgam Inorganic materials 0.000 description 1
- ODZPKZBBUMBTMG-UHFFFAOYSA-N sodium amide Chemical compound [NH2-].[Na+] ODZPKZBBUMBTMG-UHFFFAOYSA-N 0.000 description 1
- 239000012265 solid product Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000010189 synthetic method Methods 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- HPICRATUQFHULE-UHFFFAOYSA-J uranium(4+);tetrachloride Chemical compound Cl[U](Cl)(Cl)Cl HPICRATUQFHULE-UHFFFAOYSA-J 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C257/00—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines
- C07C257/10—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines
- C07C257/14—Compounds containing carboxyl groups, the doubly-bound oxygen atom of a carboxyl group being replaced by a doubly-bound nitrogen atom, this nitrogen atom not being further bound to an oxygen atom, e.g. imino-ethers, amidines with replacement of the other oxygen atom of the carboxyl group by nitrogen atoms, e.g. amidines having carbon atoms of amidino groups bound to acyclic carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F11/00—Compounds containing elements of Groups 6 or 16 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F9/00—Compounds containing elements of Groups 5 or 15 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/405—Oxides of refractory metals or yttrium
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Vapour Deposition (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Formation Of Insulating Films (AREA)
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| US81720906P | 2006-06-28 | 2006-06-28 | |
| US60/817,209 | 2006-06-28 | ||
| US11/581,986 US7264486B2 (en) | 2005-10-17 | 2006-10-17 | Electrical connector |
| US11/581,986 | 2006-10-17 |
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| CN2007800298108A Division CN101500989B (zh) | 2006-06-28 | 2007-06-26 | 四脒基金属(iv)化合物及其在气相沉积中的用途 |
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| CN2007800298108A Active CN101500989B (zh) | 2006-06-28 | 2007-06-26 | 四脒基金属(iv)化合物及其在气相沉积中的用途 |
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| KR (1) | KR101467587B1 (enExample) |
| CN (2) | CN102993050A (enExample) |
| WO (1) | WO2008002546A1 (enExample) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117024309A (zh) * | 2023-08-14 | 2023-11-10 | 苏州源展材料科技有限公司 | 一种低锂含量的脒基金属配合物的制备方法 |
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| US8288198B2 (en) | 2006-05-12 | 2012-10-16 | Advanced Technology Materials, Inc. | Low temperature deposition of phase change memory materials |
| KR101467587B1 (ko) * | 2006-06-28 | 2014-12-01 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속(ⅳ) 테트라-아미디네이트 화합물 및 기상증착에서의 그의 용도 |
| EP2511280A1 (en) | 2006-11-02 | 2012-10-17 | Advanced Technology Materials, Inc. | Germanium amidinate complexes useful for CVD/ALD of metal thin films |
| US7973189B2 (en) * | 2007-04-09 | 2011-07-05 | President And Fellows Of Harvard College | Cobalt nitride layers for copper interconnects and methods for forming them |
| TWI398541B (zh) * | 2007-06-05 | 2013-06-11 | 羅門哈斯電子材料有限公司 | 有機金屬化合物 |
| TWI471449B (zh) | 2007-09-17 | 2015-02-01 | Air Liquide | 用於ｇｓｔ膜沈積之碲前驅物 |
| KR101458953B1 (ko) | 2007-10-11 | 2014-11-07 | 삼성전자주식회사 | Ｇｅ（Ⅱ）소오스를 사용한 상변화 물질막 형성 방법 및상변화 메모리 소자 제조 방법 |
| US8834968B2 (en) | 2007-10-11 | 2014-09-16 | Samsung Electronics Co., Ltd. | Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device |
| SG178736A1 (en) | 2007-10-31 | 2012-03-29 | Advanced Tech Materials | Amorphous ge/te deposition process |
| US20090215225A1 (en) | 2008-02-24 | 2009-08-27 | Advanced Technology Materials, Inc. | Tellurium compounds useful for deposition of tellurium containing materials |
| US8802194B2 (en) | 2008-05-29 | 2014-08-12 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Tellurium precursors for film deposition |
| WO2010055423A2 (en) | 2008-05-29 | 2010-05-20 | L'air Liquide - Societe Anonyme Pour I'etude Et I'exploitation Des Procedes Georges Claude | Tellurium precursors for film deposition |
| US8636845B2 (en) | 2008-06-25 | 2014-01-28 | L'Air Liquide, Société Anonyme pour l'Etude et l'Exploitation des Procédés Georges Claude | Metal heterocyclic compounds for deposition of thin films |
| US8236381B2 (en) | 2008-08-08 | 2012-08-07 | L'air Liquide Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Metal piperidinate and metal pyridinate precursors for thin film deposition |
| WO2010065874A2 (en) | 2008-12-05 | 2010-06-10 | Atmi | High concentration nitrogen-containing germanium telluride based memory devices and processes of making |
| JP2013503849A (ja) | 2009-09-02 | 2013-02-04 | レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード | ゲルマニウム含有フィルムの堆積のための二ハロゲン化ゲルマニウム（ｉｉ）先駆物質 |
| SE1000070A1 (sv) | 2010-01-26 | 2011-06-07 | Formox Ab | Katalysator för framställning av aldehyd |
| KR20120123126A (ko) | 2010-02-03 | 2012-11-07 | 레르 리키드 쏘시에떼 아노님 뿌르 레？드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 | 박막 증착용 칼코게나이드-함유 전구체, 그의 제조 방법 및 사용 방법 |
| KR101706809B1 (ko) | 2010-03-26 | 2017-02-15 | 엔테그리스, 아이엔씨. | 게르마늄 안티몬 텔루라이드 물질 및 이를 포함하는 장치 |
| US9190609B2 (en) | 2010-05-21 | 2015-11-17 | Entegris, Inc. | Germanium antimony telluride materials and devices incorporating same |
| KR101847953B1 (ko) * | 2010-08-27 | 2018-04-11 | 메르크 파텐트 게엠베하 | 몰리브덴(ｉｖ) 아미드 전구체 및 원자층 증착용으로서의 그것의 용도 |
| CN102418084A (zh) * | 2011-12-14 | 2012-04-18 | 无锡迈纳德微纳技术有限公司 | 一种源气隔离的固态源原子层沉积装置和方法 |
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| KR102430540B1 (ko) | 2015-05-27 | 2022-08-08 | 에이에스엠 아이피 홀딩 비.브이. | 몰리브덴 또는 텅스텐 함유 박막의 ald용 전구체의 합성 및 사용 |
| KR101581314B1 (ko) | 2015-07-20 | 2015-12-31 | (주)마이크로켐 | 텅스텐 전구체 및 이를 포함하는 텅스텐 함유 필름 증착방법 |
| US10662527B2 (en) | 2016-06-01 | 2020-05-26 | Asm Ip Holding B.V. | Manifolds for uniform vapor deposition |
| US10358407B2 (en) | 2016-10-12 | 2019-07-23 | Asm Ip Holding B.V. | Synthesis and use of precursors for vapor deposition of tungsten containing thin films |
| US10643838B2 (en) * | 2017-06-20 | 2020-05-05 | Applied Materials, Inc. | In-situ formation of non-volatile lanthanide thin film precursors and use in ALD and CVD |
| CN108641073B (zh) * | 2018-04-17 | 2020-09-29 | 山西大学 | 一种三核有机亚锡金属催化剂及其制备方法和应用 |
| US11492701B2 (en) | 2019-03-19 | 2022-11-08 | Asm Ip Holding B.V. | Reactor manifolds |
| CN110128373B (zh) * | 2019-06-12 | 2023-03-24 | 鸿翌科技有限公司 | 哌嗪基锡配合物及其制备方法、薄膜、太阳能电池 |
| KR20210048408A (ko) | 2019-10-22 | 2021-05-03 | 에이에스엠 아이피 홀딩 비.브이. | 반도체 증착 반응기 매니폴드 |
| TWI865725B (zh) | 2020-02-10 | 2024-12-11 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 高深寬比孔內的氧化鉿之沉積 |
| KR20220167299A (ko) * | 2020-04-10 | 2022-12-20 | 가부시키가이샤 아데카 | 아미디네이트 화합물, 그 2 량체 화합물, 박막 형성용 원료 및 박막의 제조 방법 |
| TW202200828A (zh) | 2020-06-24 | 2022-01-01 | 荷蘭商Ａｓｍ Ｉｐ私人控股有限公司 | 含鉬薄膜的氣相沉積 |
| WO2022196491A1 (ja) | 2021-03-18 | 2022-09-22 | 株式会社Adeka | スズ化合物、薄膜形成用原料、薄膜、薄膜の製造方法及びハロゲン化合物 |
| KR102806563B1 (ko) * | 2022-05-11 | 2025-05-16 | 한국화학연구원 | 신규한 유기주석 화합물 및 이를 이용한 박막의 제조방법 |
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| KR101467587B1 (ko) * | 2006-06-28 | 2014-12-01 | 프레지던트 앤드 펠로우즈 오브 하바드 칼리지 | 금속(ⅳ) 테트라-아미디네이트 화합물 및 기상증착에서의 그의 용도 |
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- 2007-06-26 KR KR1020097001242A patent/KR101467587B1/ko active Active
- 2007-06-26 EP EP07796442A patent/EP2032529B1/en active Active
- 2007-06-26 WO PCT/US2007/014768 patent/WO2008002546A1/en not_active Ceased
- 2007-06-26 JP JP2009518210A patent/JP5555872B2/ja active Active
- 2007-06-26 CN CN2012104614215A patent/CN102993050A/zh active Pending
- 2007-06-26 CN CN2007800298108A patent/CN101500989B/zh active Active
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117024309A (zh) * | 2023-08-14 | 2023-11-10 | 苏州源展材料科技有限公司 | 一种低锂含量的脒基金属配合物的制备方法 |
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| JP2009542654A (ja) | 2009-12-03 |
| JP5555872B2 (ja) | 2014-07-23 |
| KR101467587B1 (ko) | 2014-12-01 |
| KR20090024803A (ko) | 2009-03-09 |
| EP2032529B1 (en) | 2012-10-17 |
| CN101500989B (zh) | 2012-12-19 |
| WO2008002546A1 (en) | 2008-01-03 |
| JP2013209375A (ja) | 2013-10-10 |
| CN101500989A (zh) | 2009-08-05 |
| EP2032529A1 (en) | 2009-03-11 |
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Application publication date: 20130327 |