CN102985508A - 研磨剂和研磨方法 - Google Patents
研磨剂和研磨方法 Download PDFInfo
- Publication number
- CN102985508A CN102985508A CN201180033927XA CN201180033927A CN102985508A CN 102985508 A CN102985508 A CN 102985508A CN 201180033927X A CN201180033927X A CN 201180033927XA CN 201180033927 A CN201180033927 A CN 201180033927A CN 102985508 A CN102985508 A CN 102985508A
- Authority
- CN
- China
- Prior art keywords
- abrasive
- silicon oxide
- grinding
- oxide particle
- average primary
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims description 29
- 238000005498 polishing Methods 0.000 title abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 122
- 239000002245 particle Substances 0.000 claims abstract description 114
- 229910052814 silicon oxide Inorganic materials 0.000 claims abstract description 109
- 239000011164 primary particle Substances 0.000 claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000000227 grinding Methods 0.000 claims description 140
- 239000008119 colloidal silica Substances 0.000 claims description 12
- 238000011084 recovery Methods 0.000 claims description 3
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 28
- 238000003801 milling Methods 0.000 description 19
- 239000006061 abrasive grain Substances 0.000 description 18
- 239000000203 mixture Substances 0.000 description 16
- 238000002156 mixing Methods 0.000 description 12
- 229910052594 sapphire Inorganic materials 0.000 description 9
- 239000010980 sapphire Substances 0.000 description 9
- 238000004064 recycling Methods 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
- 238000011156 evaluation Methods 0.000 description 7
- 238000007665 sagging Methods 0.000 description 6
- 239000006185 dispersion Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000002688 persistence Effects 0.000 description 5
- 235000012431 wafers Nutrition 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000002950 deficient Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000001879 gelation Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000004438 BET method Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000002612 dispersion medium Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 235000019353 potassium silicate Nutrition 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 description 1
- 229910002012 Aerosil® Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 125000002015 acyclic group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000010612 desalination reaction Methods 0.000 description 1
- 238000002050 diffraction method Methods 0.000 description 1
- 239000003651 drinking water Substances 0.000 description 1
- 235000020188 drinking water Nutrition 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 238000005755 formation reaction Methods 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 150000002500 ions Chemical group 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000006386 neutralization reaction Methods 0.000 description 1
- 239000004745 nonwoven fabric Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- -1 silicon alkoxide Chemical class 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000005049 silicon tetrachloride Substances 0.000 description 1
- 239000012798 spherical particle Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
- B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1409—Abrasive particles per se
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/02008—Multistep processes
- H01L21/0201—Specific process step
- H01L21/02024—Mirror polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Grinding-Machine Dressing And Accessory Apparatuses (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010156536 | 2010-07-09 | ||
| JP2010-156536 | 2010-07-09 | ||
| PCT/JP2011/064786 WO2012005142A1 (ja) | 2010-07-09 | 2011-06-28 | 研磨剤および研磨方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102985508A true CN102985508A (zh) | 2013-03-20 |
Family
ID=45441125
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201180033927XA Pending CN102985508A (zh) | 2010-07-09 | 2011-06-28 | 研磨剂和研磨方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US20130130595A1 (ko) |
| JP (1) | JPWO2012005142A1 (ko) |
| KR (1) | KR20130114635A (ko) |
| CN (1) | CN102985508A (ko) |
| TW (1) | TW201213472A (ko) |
| WO (1) | WO2012005142A1 (ko) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104099025A (zh) * | 2013-04-02 | 2014-10-15 | 信越化学工业株式会社 | 胶态二氧化硅抛光组合物和使用其制造合成石英玻璃基板的方法 |
| CN104893587A (zh) * | 2015-03-09 | 2015-09-09 | 江苏中晶科技有限公司 | 高效c向蓝宝石抛光液及其制备方法 |
| CN104924195A (zh) * | 2015-06-12 | 2015-09-23 | 浙江工业大学 | 一种蓝宝石晶片高效超精密加工方法 |
| CN107052990A (zh) * | 2016-12-01 | 2017-08-18 | 苏州爱彼光电材料有限公司 | 蓝宝石基板研磨装置 |
| CN108789163A (zh) * | 2018-05-30 | 2018-11-13 | 郑州合晶硅材料有限公司 | 一种硅片背面抛光用装置及抛光方法 |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5900079B2 (ja) * | 2012-03-23 | 2016-04-06 | 三菱化学株式会社 | ポリシングスラリー、及びその製造方法、並びに第１３族窒化物基板の製造方法 |
| KR102105844B1 (ko) * | 2012-08-24 | 2020-04-29 | 에코랍 유에스에이 인코퍼레이티드 | 사파이어 표면 폴리싱 방법 |
| CN105189043B (zh) | 2013-03-15 | 2019-11-08 | 艺康美国股份有限公司 | 抛光蓝宝石表面的方法 |
| JP2016155900A (ja) * | 2015-02-23 | 2016-09-01 | 株式会社フジミインコーポレーテッド | 研磨用組成物、研磨方法及び硬脆材料基板の製造方法 |
| CN106737130A (zh) * | 2016-12-30 | 2017-05-31 | 苏州爱彼光电材料有限公司 | 蓝宝石基板研磨装置 |
| US10377014B2 (en) | 2017-02-28 | 2019-08-13 | Ecolab Usa Inc. | Increased wetting of colloidal silica as a polishing slurry |
| CN108081147A (zh) * | 2017-12-15 | 2018-05-29 | 德淮半导体有限公司 | 晶圆研磨装置及废液排放管路 |
| EP3807049A4 (en) * | 2018-06-15 | 2022-03-23 | Mirka Ltd. | ABRASION WITH AN ABRASION PLATE |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04253141A (ja) * | 1991-01-28 | 1992-09-08 | Nec Kagoshima Ltd | 表示管 |
| CN1434846A (zh) * | 2000-05-12 | 2003-08-06 | 日产化学工业株式会社 | 抛光剂组合物 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11256141A (ja) * | 1998-03-12 | 1999-09-21 | Sony Corp | 研磨スラリーおよび研磨方法 |
| JP4253141B2 (ja) * | 2000-08-21 | 2009-04-08 | 株式会社東芝 | 化学機械研磨用スラリおよび半導体装置の製造方法 |
| US20020104269A1 (en) * | 2001-01-26 | 2002-08-08 | Applied Materials, Inc. | Photochemically enhanced chemical polish |
| JP5168890B2 (ja) * | 2006-11-24 | 2013-03-27 | 日亜化学工業株式会社 | 半導体発光素子及び半導体発光素子の製造方法 |
| JP5019429B2 (ja) * | 2006-12-26 | 2012-09-05 | 花王株式会社 | 容器入り分散液 |
| JP5357396B2 (ja) * | 2007-01-31 | 2013-12-04 | ニッタ・ハース株式会社 | 研磨組成物用添加剤および研磨組成物の使用方法 |
| JP5358996B2 (ja) * | 2008-03-26 | 2013-12-04 | 日立金属株式会社 | ＳｉＣ単結晶基板の製造方法 |
| JP4959763B2 (ja) * | 2009-08-28 | 2012-06-27 | 昭和電工株式会社 | ＳｉＣエピタキシャルウェハ及びその製造方法 |
-
2011
- 2011-06-28 JP JP2012523826A patent/JPWO2012005142A1/ja not_active Withdrawn
- 2011-06-28 CN CN201180033927XA patent/CN102985508A/zh active Pending
- 2011-06-28 KR KR1020137000480A patent/KR20130114635A/ko not_active Application Discontinuation
- 2011-06-28 WO PCT/JP2011/064786 patent/WO2012005142A1/ja active Application Filing
- 2011-07-08 TW TW100124303A patent/TW201213472A/zh unknown
-
2013
- 2013-01-09 US US13/737,210 patent/US20130130595A1/en not_active Abandoned
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04253141A (ja) * | 1991-01-28 | 1992-09-08 | Nec Kagoshima Ltd | 表示管 |
| CN1434846A (zh) * | 2000-05-12 | 2003-08-06 | 日产化学工业株式会社 | 抛光剂组合物 |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104099025A (zh) * | 2013-04-02 | 2014-10-15 | 信越化学工业株式会社 | 胶态二氧化硅抛光组合物和使用其制造合成石英玻璃基板的方法 |
| CN104099025B (zh) * | 2013-04-02 | 2019-08-20 | 信越化学工业株式会社 | 胶态二氧化硅抛光组合物和使用其制造合成石英玻璃基板的方法 |
| CN104893587A (zh) * | 2015-03-09 | 2015-09-09 | 江苏中晶科技有限公司 | 高效c向蓝宝石抛光液及其制备方法 |
| CN104924195A (zh) * | 2015-06-12 | 2015-09-23 | 浙江工业大学 | 一种蓝宝石晶片高效超精密加工方法 |
| CN107052990A (zh) * | 2016-12-01 | 2017-08-18 | 苏州爱彼光电材料有限公司 | 蓝宝石基板研磨装置 |
| CN108789163A (zh) * | 2018-05-30 | 2018-11-13 | 郑州合晶硅材料有限公司 | 一种硅片背面抛光用装置及抛光方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20130114635A (ko) | 2013-10-18 |
| US20130130595A1 (en) | 2013-05-23 |
| JPWO2012005142A1 (ja) | 2013-09-02 |
| TW201213472A (en) | 2012-04-01 |
| WO2012005142A1 (ja) | 2012-01-12 |
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Legal Events
| Date | Code | Title | Description |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20130320 |