CN102918622B - 用于物理气相沉积的腔室 - Google Patents

用于物理气相沉积的腔室 Download PDF

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Publication number
CN102918622B
CN102918622B CN201180026737.5A CN201180026737A CN102918622B CN 102918622 B CN102918622 B CN 102918622B CN 201180026737 A CN201180026737 A CN 201180026737A CN 102918622 B CN102918622 B CN 102918622B
Authority
CN
China
Prior art keywords
chamber
target
door
bearing
housing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201180026737.5A
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English (en)
Chinese (zh)
Other versions
CN102918622A (zh
Inventor
R·欣特舒斯特
L·利珀特
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of CN102918622A publication Critical patent/CN102918622A/zh
Application granted granted Critical
Publication of CN102918622B publication Critical patent/CN102918622B/zh
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
CN201180026737.5A 2010-05-11 2011-05-11 用于物理气相沉积的腔室 Expired - Fee Related CN102918622B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10162560.6A EP2387063B1 (en) 2010-05-11 2010-05-11 Chamber for physical vapor deposition
EP10162560.6 2010-05-11
PCT/EP2011/057626 WO2011141513A1 (en) 2010-05-11 2011-05-11 Chamber for physical vapor deposition

Publications (2)

Publication Number Publication Date
CN102918622A CN102918622A (zh) 2013-02-06
CN102918622B true CN102918622B (zh) 2016-03-02

Family

ID=42320179

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201180026737.5A Expired - Fee Related CN102918622B (zh) 2010-05-11 2011-05-11 用于物理气相沉积的腔室

Country Status (7)

Country Link
US (1) US8758579B2 (https=)
EP (2) EP2387063B1 (https=)
JP (2) JP2013530308A (https=)
KR (1) KR101667195B1 (https=)
CN (1) CN102918622B (https=)
TW (1) TWI537411B (https=)
WO (1) WO2011141513A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101913791B1 (ko) * 2014-07-22 2018-11-01 어플라이드 머티어리얼스, 인코포레이티드 타겟 어레인지먼트, 그를 구비한 프로세싱 장치 및 그의 제조 방법
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
WO2020048846A1 (en) 2018-09-03 2020-03-12 Agc Glass Europe Kit for mounting a surface treatment chamber
NL2023642B1 (en) 2019-08-14 2021-02-24 Leydenjar Tech B V Silicon composition material for use as battery anode
WO2022058014A1 (en) * 2020-09-17 2022-03-24 Applied Materials, Inc. Cathode assembly, deposition apparatus and method for sputter deposition
WO2023110105A1 (en) * 2021-12-16 2023-06-22 Applied Materials, Inc. Cathode assembly, deposition apparatus and method for sputter deposition
NL2030360B1 (en) * 2021-12-30 2023-07-06 Leydenjar Tech B V Plasma-enhanced Chemical Vapour Deposition Apparatus

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924758U (ja) * 1982-08-04 1984-02-16 株式会社徳田製作所 スパツタリング装置
US4519885A (en) * 1983-12-27 1985-05-28 Shatterproof Glass Corp. Method and apparatus for changing sputtering targets in a magnetron sputtering system
US5591314A (en) * 1995-10-27 1997-01-07 Morgan; Steven V. Apparatus for affixing a rotating cylindrical magnetron target to a spindle
US5824197A (en) * 1996-06-05 1998-10-20 Applied Materials, Inc. Shield for a physical vapor deposition chamber
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
JP4614037B2 (ja) * 2000-09-08 2011-01-19 Ａｇｃセラミックス株式会社 円筒状ターゲット
US20050051422A1 (en) * 2003-02-21 2005-03-10 Rietzel James G. Cylindrical magnetron with self cleaning target
US7097744B2 (en) * 2003-06-12 2006-08-29 Applied Materials, Inc. Method and apparatus for controlling darkspace gap in a chamber
US20050005846A1 (en) * 2003-06-23 2005-01-13 Venkat Selvamanickam High throughput continuous pulsed laser deposition process and apparatus
JP2005213585A (ja) * 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置
US8562799B2 (en) * 2004-10-18 2013-10-22 Soleras Advanced Coatings Bvba Flat end-block for carrying a rotatable sputtering target
US7824528B2 (en) * 2004-10-18 2010-11-02 Bekaert Advanced Coatings End-block for a rotatable target sputtering apparatus
DE102004060423B4 (de) * 2004-12-14 2016-10-27 Heraeus Deutschland GmbH & Co. KG Rohrtarget und dessen Verwendung
CN1827545B (zh) * 2005-03-03 2012-11-07 应用材料两合股份有限公司 涂敷基底的系统及插入元件
EP1698715A1 (de) * 2005-03-03 2006-09-06 Applied Films GmbH & Co. KG Anlage zum Beschichten eines Substrats und Einschubelement
KR20070108907A (ko) * 2005-03-11 2007-11-13 베카에르트 어드벤스드 코팅스 단일, 직각 엔드-블록
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
US8500972B2 (en) * 2008-04-14 2013-08-06 Angstrom Sciences, Inc. Cylindrical magnetron
US20100101949A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Rotatable sputter target backing cylinder, rotatable sputter target, method of producing a rotatable sputter target, and coating installation

Also Published As

Publication number Publication date
JP2016148106A (ja) 2016-08-18
EP2387063A1 (en) 2011-11-16
TWI537411B (zh) 2016-06-11
EP2387063B1 (en) 2014-04-30
US20110278166A1 (en) 2011-11-17
JP6275755B2 (ja) 2018-02-07
JP2013530308A (ja) 2013-07-25
US8758579B2 (en) 2014-06-24
TW201200618A (en) 2012-01-01
WO2011141513A1 (en) 2011-11-17
EP2709138B1 (en) 2016-11-30
CN102918622A (zh) 2013-02-06
KR20130081230A (ko) 2013-07-16
KR101667195B1 (ko) 2016-10-18
EP2709138A1 (en) 2014-03-19

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Granted publication date: 20160302

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CF01 Termination of patent right due to non-payment of annual fee