KR101667195B1 - 물리적 기상 증착용 챔버 - Google Patents

물리적 기상 증착용 챔버 Download PDF

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Publication number
KR101667195B1
KR101667195B1 KR1020127032144A KR20127032144A KR101667195B1 KR 101667195 B1 KR101667195 B1 KR 101667195B1 KR 1020127032144 A KR1020127032144 A KR 1020127032144A KR 20127032144 A KR20127032144 A KR 20127032144A KR 101667195 B1 KR101667195 B1 KR 101667195B1
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KR
South Korea
Prior art keywords
chamber
target
door
vapor deposition
physical vapor
Prior art date
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Expired - Fee Related
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KR1020127032144A
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English (en)
Korean (ko)
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KR20130081230A (ko
Inventor
라이너 힌터슈스터
로타르 리페르트
Original Assignee
어플라이드 머티어리얼스, 인코포레이티드
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Publication of KR20130081230A publication Critical patent/KR20130081230A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32532—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
KR1020127032144A 2010-05-11 2011-05-11 물리적 기상 증착용 챔버 Expired - Fee Related KR101667195B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP10162560.6A EP2387063B1 (en) 2010-05-11 2010-05-11 Chamber for physical vapor deposition
EP10162560.6 2010-05-11
PCT/EP2011/057626 WO2011141513A1 (en) 2010-05-11 2011-05-11 Chamber for physical vapor deposition

Publications (2)

Publication Number Publication Date
KR20130081230A KR20130081230A (ko) 2013-07-16
KR101667195B1 true KR101667195B1 (ko) 2016-10-18

Family

ID=42320179

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020127032144A Expired - Fee Related KR101667195B1 (ko) 2010-05-11 2011-05-11 물리적 기상 증착용 챔버

Country Status (7)

Country Link
US (1) US8758579B2 (https=)
EP (2) EP2387063B1 (https=)
JP (2) JP2013530308A (https=)
KR (1) KR101667195B1 (https=)
CN (1) CN102918622B (https=)
TW (1) TWI537411B (https=)
WO (1) WO2011141513A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101913791B1 (ko) * 2014-07-22 2018-11-01 어플라이드 머티어리얼스, 인코포레이티드 타겟 어레인지먼트, 그를 구비한 프로세싱 장치 및 그의 제조 방법
TWI700750B (zh) * 2017-01-24 2020-08-01 美商應用材料股份有限公司 用於介電薄膜的選擇性沉積之方法及設備
WO2020048846A1 (en) 2018-09-03 2020-03-12 Agc Glass Europe Kit for mounting a surface treatment chamber
NL2023642B1 (en) 2019-08-14 2021-02-24 Leydenjar Tech B V Silicon composition material for use as battery anode
WO2022058014A1 (en) * 2020-09-17 2022-03-24 Applied Materials, Inc. Cathode assembly, deposition apparatus and method for sputter deposition
WO2023110105A1 (en) * 2021-12-16 2023-06-22 Applied Materials, Inc. Cathode assembly, deposition apparatus and method for sputter deposition
NL2030360B1 (en) * 2021-12-30 2023-07-06 Leydenjar Tech B V Plasma-enhanced Chemical Vapour Deposition Apparatus

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040251130A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Method and apparatus for controlling darkspace gap in a chamber
JP2008533297A (ja) * 2005-03-11 2008-08-21 ベーカート・アドヴァンスト・コーティングス 単一の直角エンドブロック

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5924758U (ja) * 1982-08-04 1984-02-16 株式会社徳田製作所 スパツタリング装置
US4519885A (en) * 1983-12-27 1985-05-28 Shatterproof Glass Corp. Method and apparatus for changing sputtering targets in a magnetron sputtering system
US5591314A (en) * 1995-10-27 1997-01-07 Morgan; Steven V. Apparatus for affixing a rotating cylindrical magnetron target to a spindle
US5824197A (en) * 1996-06-05 1998-10-20 Applied Materials, Inc. Shield for a physical vapor deposition chamber
US6254745B1 (en) * 1999-02-19 2001-07-03 Tokyo Electron Limited Ionized physical vapor deposition method and apparatus with magnetic bucket and concentric plasma and material source
JP4614037B2 (ja) * 2000-09-08 2011-01-19 Ａｇｃセラミックス株式会社 円筒状ターゲット
US20050051422A1 (en) * 2003-02-21 2005-03-10 Rietzel James G. Cylindrical magnetron with self cleaning target
US20050005846A1 (en) * 2003-06-23 2005-01-13 Venkat Selvamanickam High throughput continuous pulsed laser deposition process and apparatus
JP2005213585A (ja) * 2004-01-29 2005-08-11 Konica Minolta Opto Inc マグネトロンスパッタ装置
US8562799B2 (en) * 2004-10-18 2013-10-22 Soleras Advanced Coatings Bvba Flat end-block for carrying a rotatable sputtering target
US7824528B2 (en) * 2004-10-18 2010-11-02 Bekaert Advanced Coatings End-block for a rotatable target sputtering apparatus
DE102004060423B4 (de) * 2004-12-14 2016-10-27 Heraeus Deutschland GmbH & Co. KG Rohrtarget und dessen Verwendung
CN1827545B (zh) * 2005-03-03 2012-11-07 应用材料两合股份有限公司 涂敷基底的系统及插入元件
EP1698715A1 (de) * 2005-03-03 2006-09-06 Applied Films GmbH & Co. KG Anlage zum Beschichten eines Substrats und Einschubelement
US20070134500A1 (en) * 2005-12-14 2007-06-14 Klaus Hartig Sputtering targets and methods for depositing film containing tin and niobium
US8500972B2 (en) * 2008-04-14 2013-08-06 Angstrom Sciences, Inc. Cylindrical magnetron
US20100101949A1 (en) * 2008-10-24 2010-04-29 Applied Materials, Inc. Rotatable sputter target backing cylinder, rotatable sputter target, method of producing a rotatable sputter target, and coating installation

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040251130A1 (en) * 2003-06-12 2004-12-16 Applied Materials, Inc. Method and apparatus for controlling darkspace gap in a chamber
JP2008533297A (ja) * 2005-03-11 2008-08-21 ベーカート・アドヴァンスト・コーティングス 単一の直角エンドブロック

Also Published As

Publication number Publication date
JP2016148106A (ja) 2016-08-18
EP2387063A1 (en) 2011-11-16
TWI537411B (zh) 2016-06-11
EP2387063B1 (en) 2014-04-30
US20110278166A1 (en) 2011-11-17
JP6275755B2 (ja) 2018-02-07
JP2013530308A (ja) 2013-07-25
US8758579B2 (en) 2014-06-24
TW201200618A (en) 2012-01-01
WO2011141513A1 (en) 2011-11-17
EP2709138B1 (en) 2016-11-30
CN102918622A (zh) 2013-02-06
KR20130081230A (ko) 2013-07-16
CN102918622B (zh) 2016-03-02
EP2709138A1 (en) 2014-03-19

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