CN102893378A - 用于半导体的蚀刻工艺 - Google Patents

用于半导体的蚀刻工艺 Download PDF

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Publication number
CN102893378A
CN102893378A CN2010800506808A CN201080050680A CN102893378A CN 102893378 A CN102893378 A CN 102893378A CN 2010800506808 A CN2010800506808 A CN 2010800506808A CN 201080050680 A CN201080050680 A CN 201080050680A CN 102893378 A CN102893378 A CN 102893378A
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CN
China
Prior art keywords
semiconductor
etching
etch
etched
photoresist
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Pending
Application number
CN2010800506808A
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English (en)
Chinese (zh)
Inventor
迈克尔·A·哈斯
特里·L·史密斯
张俊颖
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3M Innovative Properties Co
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3M Innovative Properties Co
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Publication date
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Publication of CN102893378A publication Critical patent/CN102893378A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Drying Of Semiconductors (AREA)
CN2010800506808A 2009-11-09 2010-11-02 用于半导体的蚀刻工艺 Pending CN102893378A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09
PCT/US2010/055096 WO2011056783A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Publications (1)

Publication Number Publication Date
CN102893378A true CN102893378A (zh) 2013-01-23

Family

ID=43970710

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800506808A Pending CN102893378A (zh) 2009-11-09 2010-11-02 用于半导体的蚀刻工艺

Country Status (7)

Country Link
US (1) US8765611B2 (https=)
EP (1) EP2499663A2 (https=)
JP (1) JP5723377B2 (https=)
KR (1) KR20120095411A (https=)
CN (1) CN102893378A (https=)
TW (1) TW201135832A (https=)
WO (1) WO2011056783A2 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103901516A (zh) * 2012-12-26 2014-07-02 清华大学 光栅的制备方法
TWI553843B (zh) * 2013-06-17 2016-10-11 波音公司 用於乾蝕刻光偵測器陣列的系統和方法
WO2025153009A1 (en) * 2024-01-17 2025-07-24 The Hong Kong University Of Science And Technology Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma

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JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
EP2922103B1 (en) * 2012-08-21 2017-04-05 Oji Holdings Corporation Substrate for semiconductor light emitting elements and semiconductor light emitting element
US9925569B2 (en) 2012-09-25 2018-03-27 Applied Materials, Inc. Chamber cleaning with infrared absorption gas
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (ja) * 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
KR102666776B1 (ko) * 2019-05-10 2024-05-21 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판
KR20250114143A (ko) * 2019-11-12 2025-07-28 가부시끼가이샤 레조낙 부착물 제거 방법 및 성막 방법
CN116584011B (zh) * 2020-11-27 2026-03-24 苏州晶湛半导体有限公司 半导体发光器件及其制备方法
CN113823992B (zh) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 半导体器件制造方法及半导体器件
CN115343788B (zh) * 2022-08-18 2024-03-15 上海交通大学 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜
CN117525220A (zh) * 2023-11-17 2024-02-06 北京北方华创微电子装备有限公司 半导体器件的制造方法及半导体工艺设备

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JPH0294522A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
CN1450667A (zh) * 2002-04-05 2003-10-22 株式会社东芝 半导体发光元件及其制造方法

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US5404027A (en) 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
EP0774772A1 (en) 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
DE19736370C2 (de) 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
KR100269323B1 (ko) 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
IT1301840B1 (it) 1998-06-30 2000-07-07 Stmicroelettronica S R L Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi
DE19919832A1 (de) 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
SE9903213D0 (sv) * 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6347874B1 (en) 2000-02-16 2002-02-19 3M Innovative Properties Company Wedge light extractor with risers
DE10247913A1 (de) 2002-10-14 2004-04-22 Robert Bosch Gmbh Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat
US7238970B2 (en) 2003-10-30 2007-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2005353972A (ja) 2004-06-14 2005-12-22 Canon Inc プラズマ処理方法
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7575007B2 (en) * 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
US8179034B2 (en) 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (zh) 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
JP2012532454A (ja) * 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0294522A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
US5356478A (en) * 1992-06-22 1994-10-18 Lam Research Corporation Plasma cleaning method for removing residues in a plasma treatment chamber
JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
CN1450667A (zh) * 2002-04-05 2003-10-22 株式会社东芝 半导体发光元件及其制造方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103901516A (zh) * 2012-12-26 2014-07-02 清华大学 光栅的制备方法
TWI553843B (zh) * 2013-06-17 2016-10-11 波音公司 用於乾蝕刻光偵測器陣列的系統和方法
WO2025153009A1 (en) * 2024-01-17 2025-07-24 The Hong Kong University Of Science And Technology Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma

Also Published As

Publication number Publication date
TW201135832A (en) 2011-10-16
US20110108956A1 (en) 2011-05-12
US8765611B2 (en) 2014-07-01
EP2499663A2 (en) 2012-09-19
KR20120095411A (ko) 2012-08-28
WO2011056783A3 (en) 2011-07-28
WO2011056783A2 (en) 2011-05-12
JP2013510442A (ja) 2013-03-21
JP5723377B2 (ja) 2015-05-27

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Application publication date: 20130123