JP5723377B2 - 半導体のためのエッチングプロセス - Google Patents

半導体のためのエッチングプロセス Download PDF

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Publication number
JP5723377B2
JP5723377B2 JP2012537938A JP2012537938A JP5723377B2 JP 5723377 B2 JP5723377 B2 JP 5723377B2 JP 2012537938 A JP2012537938 A JP 2012537938A JP 2012537938 A JP2012537938 A JP 2012537938A JP 5723377 B2 JP5723377 B2 JP 5723377B2
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Japan
Prior art keywords
etching
semiconductor
photoresist
semiconductors
reactive
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Expired - Fee Related
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JP2012537938A
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English (en)
Japanese (ja)
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JP2013510442A5 (https=
JP2013510442A (ja
Inventor
マイケル エー． ハーセ，
マイケル エー． ハーセ，
テリー エル． スミス，
テリー エル． スミス，
ジュン‐イン ツァン，
ジュン‐イン ツァン，
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3M Innovative Properties Co
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3M Innovative Properties Co
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/872—Periodic patterns for optical field-shaping, e.g. photonic bandgap structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

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  • Drying Of Semiconductors (AREA)
JP2012537938A 2009-11-09 2010-11-02 半導体のためのエッチングプロセス Expired - Fee Related JP5723377B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US25929909P 2009-11-09 2009-11-09
US61/259,299 2009-11-09
PCT/US2010/055096 WO2011056783A2 (en) 2009-11-09 2010-11-02 Etching process for semiconductors

Publications (3)

Publication Number Publication Date
JP2013510442A JP2013510442A (ja) 2013-03-21
JP2013510442A5 JP2013510442A5 (https=) 2013-08-29
JP5723377B2 true JP5723377B2 (ja) 2015-05-27

Family

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Family Applications (1)

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JP2012537938A Expired - Fee Related JP5723377B2 (ja) 2009-11-09 2010-11-02 半導体のためのエッチングプロセス

Country Status (7)

Country Link
US (1) US8765611B2 (https=)
EP (1) EP2499663A2 (https=)
JP (1) JP5723377B2 (https=)
KR (1) KR20120095411A (https=)
CN (1) CN102893378A (https=)
TW (1) TW201135832A (https=)
WO (1) WO2011056783A2 (https=)

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JP5710433B2 (ja) * 2011-09-13 2015-04-30 株式会社東芝 成膜装置のクリーニング方法および成膜装置
FR2984769B1 (fr) * 2011-12-22 2014-03-07 Total Sa Procede de texturation de la surface d'un substrat de silicium, substrat structure et dispositif photovoltaique comportant un tel substrat structure
US8883028B2 (en) 2011-12-28 2014-11-11 Lam Research Corporation Mixed mode pulsing etching in plasma processing systems
EP2922103B1 (en) * 2012-08-21 2017-04-05 Oji Holdings Corporation Substrate for semiconductor light emitting elements and semiconductor light emitting element
US9925569B2 (en) 2012-09-25 2018-03-27 Applied Materials, Inc. Chamber cleaning with infrared absorption gas
CN103901516B (zh) * 2012-12-26 2016-06-15 清华大学 光栅的制备方法
US8941145B2 (en) * 2013-06-17 2015-01-27 The Boeing Company Systems and methods for dry etching a photodetector array
US9012305B1 (en) * 2014-01-29 2015-04-21 Applied Materials, Inc. Wafer dicing using hybrid laser scribing and plasma etch approach with intermediate non-reactive post mask-opening clean
JP6871706B2 (ja) * 2016-09-30 2021-05-12 日機装株式会社 半導体発光素子の製造方法
KR102666776B1 (ko) * 2019-05-10 2024-05-21 삼성디스플레이 주식회사 박막 트랜지스터의 제조 방법, 표시 장치의 제조 방법 및 박막 트랜지스터 기판
KR20250114143A (ko) * 2019-11-12 2025-07-28 가부시끼가이샤 레조낙 부착물 제거 방법 및 성막 방법
CN116584011B (zh) * 2020-11-27 2026-03-24 苏州晶湛半导体有限公司 半导体发光器件及其制备方法
CN113823992B (zh) * 2021-09-14 2022-11-11 苏州长瑞光电有限公司 半导体器件制造方法及半导体器件
CN115343788B (zh) * 2022-08-18 2024-03-15 上海交通大学 基于循环刻蚀工艺的石英微透镜制备方法及石英微透镜
CN117525220A (zh) * 2023-11-17 2024-02-06 北京北方华创微电子装备有限公司 半导体器件的制造方法及半导体工艺设备
WO2025153009A1 (en) * 2024-01-17 2025-07-24 The Hong Kong University Of Science And Technology Apparatus and method for dry etching of aluminum gallium arsenide optical waveguides using argon gas plasma

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Publication number Priority date Publication date Assignee Title
JPH0294522A (ja) * 1988-09-30 1990-04-05 Toshiba Corp ドライエッチング方法
US5404027A (en) 1991-05-15 1995-04-04 Minnesota Mining & Manufacturing Compay Buried ridge II-VI laser diode
DE69320963T2 (de) * 1992-06-22 1999-05-12 Lam Research Corp., Fremont, Calif. Plasmareinigungsverfahren zum entfernen von rückständen in einer plasmabehandlungskammer
DE4241045C1 (de) 1992-12-05 1994-05-26 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silicium
JPH07335620A (ja) * 1994-06-09 1995-12-22 Sony Corp Ｉｉ−ｖｉ族化合物半導体の選択的ドライエッチング方法
EP0774772A1 (en) 1995-11-17 1997-05-21 Applied Materials, Inc. Methods for physically etching silicon electrically conducting surfaces
DE19736370C2 (de) 1997-08-21 2001-12-06 Bosch Gmbh Robert Verfahren zum anisotropen Ätzen von Silizium
KR100269323B1 (ko) 1998-01-16 2000-10-16 윤종용 반도체장치의백금막식각방법
IT1301840B1 (it) 1998-06-30 2000-07-07 Stmicroelettronica S R L Metodo per incrementare la seletttvita' tra un film di materialefotosensibile ed uno strato da sottoporre ed incisione in processi
DE19919832A1 (de) 1999-04-30 2000-11-09 Bosch Gmbh Robert Verfahren zum anisotropen Plasmaätzen von Halbleitern
SE9903213D0 (sv) * 1999-06-21 1999-09-10 Carl Fredrik Carlstroem Dry etching process of compound semiconductor materials
US6352081B1 (en) * 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
US6347874B1 (en) 2000-02-16 2002-02-19 3M Innovative Properties Company Wedge light extractor with risers
JP3776824B2 (ja) * 2002-04-05 2006-05-17 株式会社東芝 半導体発光素子およびその製造方法
DE10247913A1 (de) 2002-10-14 2004-04-22 Robert Bosch Gmbh Plasmaanlage und Verfahren zum anisotropen Einätzen von Strukturen in ein Substrat
US7238970B2 (en) 2003-10-30 2007-07-03 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
JP2005353972A (ja) 2004-06-14 2005-12-22 Canon Inc プラズマ処理方法
US7402831B2 (en) 2004-12-09 2008-07-22 3M Innovative Properties Company Adapting short-wavelength LED's for polychromatic, broadband, or “white” emission
US7575007B2 (en) * 2006-08-23 2009-08-18 Applied Materials, Inc. Chamber recovery after opening barrier over copper
WO2008083188A2 (en) 2006-12-29 2008-07-10 3M Innovative Properties Company Led light source with converging extractor in an optical element
US8179034B2 (en) 2007-07-13 2012-05-15 3M Innovative Properties Company Light extraction film for organic light emitting diode display and lighting devices
CN101472455A (zh) 2007-12-29 2009-07-01 3M创新有限公司 电磁屏蔽衬垫和用于填充电磁屏蔽系统中的间隙的方法
JP2012532454A (ja) * 2009-06-30 2012-12-13 スリーエム イノベイティブ プロパティズ カンパニー カドミウム非含有の再発光半導体構成体

Also Published As

Publication number Publication date
CN102893378A (zh) 2013-01-23
TW201135832A (en) 2011-10-16
US20110108956A1 (en) 2011-05-12
US8765611B2 (en) 2014-07-01
EP2499663A2 (en) 2012-09-19
KR20120095411A (ko) 2012-08-28
WO2011056783A3 (en) 2011-07-28
WO2011056783A2 (en) 2011-05-12
JP2013510442A (ja) 2013-03-21

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