CN102863872A - 涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 - Google Patents
涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 Download PDFInfo
- Publication number
- CN102863872A CN102863872A CN2012103641959A CN201210364195A CN102863872A CN 102863872 A CN102863872 A CN 102863872A CN 2012103641959 A CN2012103641959 A CN 2012103641959A CN 201210364195 A CN201210364195 A CN 201210364195A CN 102863872 A CN102863872 A CN 102863872A
- Authority
- CN
- China
- Prior art keywords
- optical semiconductor
- coating agent
- epoxy
- white
- mounting electronic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000011248 coating agent Substances 0.000 title claims abstract description 105
- 230000003287 optical effect Effects 0.000 title claims description 109
- 239000004065 semiconductor Substances 0.000 title claims description 102
- 239000000758 substrate Substances 0.000 title description 21
- 229920005989 resin Polymers 0.000 claims abstract description 93
- 239000011347 resin Substances 0.000 claims abstract description 93
- 239000004020 conductor Substances 0.000 claims abstract description 53
- 239000012463 white pigment Substances 0.000 claims abstract description 40
- 239000004593 Epoxy Substances 0.000 claims description 42
- 239000000463 material Substances 0.000 claims description 40
- 238000013007 heat curing Methods 0.000 claims description 21
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical group O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 18
- 229920000647 polyepoxide Polymers 0.000 claims description 16
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 14
- 239000003822 epoxy resin Substances 0.000 claims description 13
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Natural products OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 claims description 9
- 125000002723 alicyclic group Chemical group 0.000 claims description 8
- 239000003795 chemical substances by application Substances 0.000 abstract description 30
- 239000003054 catalyst Substances 0.000 abstract description 13
- 239000007787 solid Substances 0.000 abstract description 7
- 229920001187 thermosetting polymer Polymers 0.000 abstract 1
- -1 ammonia ester Chemical class 0.000 description 24
- 239000002585 base Substances 0.000 description 20
- 238000001723 curing Methods 0.000 description 18
- 150000008065 acid anhydrides Chemical class 0.000 description 16
- 239000000126 substance Substances 0.000 description 15
- 238000000034 method Methods 0.000 description 11
- 238000011282 treatment Methods 0.000 description 10
- 230000009467 reduction Effects 0.000 description 9
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 8
- 238000010438 heat treatment Methods 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 7
- 229910021502 aluminium hydroxide Inorganic materials 0.000 description 7
- VTHJTEIRLNZDEV-UHFFFAOYSA-L magnesium dihydroxide Chemical compound [OH-].[OH-].[Mg+2] VTHJTEIRLNZDEV-UHFFFAOYSA-L 0.000 description 7
- 239000000347 magnesium hydroxide Substances 0.000 description 7
- 229910001862 magnesium hydroxide Inorganic materials 0.000 description 7
- 238000002156 mixing Methods 0.000 description 7
- 235000010894 Artemisia argyi Nutrition 0.000 description 6
- 244000030166 artemisia Species 0.000 description 6
- 239000002245 particle Substances 0.000 description 6
- 238000007789 sealing Methods 0.000 description 6
- OUPZKGBUJRBPGC-UHFFFAOYSA-N 1,3,5-tris(oxiran-2-ylmethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound O=C1N(CC2OC2)C(=O)N(CC2OC2)C(=O)N1CC1CO1 OUPZKGBUJRBPGC-UHFFFAOYSA-N 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 230000001186 cumulative effect Effects 0.000 description 5
- 239000003063 flame retardant Substances 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 4
- TZCXTZWJZNENPQ-UHFFFAOYSA-L barium sulfate Chemical compound [Ba+2].[O-]S([O-])(=O)=O TZCXTZWJZNENPQ-UHFFFAOYSA-L 0.000 description 4
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 4
- 238000000576 coating method Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910000073 phosphorus hydride Inorganic materials 0.000 description 4
- 238000002310 reflectometry Methods 0.000 description 4
- 230000003595 spectral effect Effects 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- GHPGOEFPKIHBNM-UHFFFAOYSA-N antimony(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Sb+3].[Sb+3] GHPGOEFPKIHBNM-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 125000000113 cyclohexyl group Chemical group [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 3
- IRDLUHRVLVEUHA-UHFFFAOYSA-N diethyl dithiophosphate Chemical compound CCOP(S)(=S)OCC IRDLUHRVLVEUHA-UHFFFAOYSA-N 0.000 description 3
- 239000000395 magnesium oxide Substances 0.000 description 3
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 3
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 229960001866 silicon dioxide Drugs 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 239000002904 solvent Substances 0.000 description 3
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 2
- MWSKJDNQKGCKPA-UHFFFAOYSA-N 6-methyl-3a,4,5,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1CC(C)=CC2C(=O)OC(=O)C12 MWSKJDNQKGCKPA-UHFFFAOYSA-N 0.000 description 2
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- 239000001361 adipic acid Substances 0.000 description 2
- 235000011037 adipic acid Nutrition 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 238000012790 confirmation Methods 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- 150000007973 cyanuric acids Chemical class 0.000 description 2
- 125000004210 cyclohexylmethyl group Chemical group [H]C([H])(*)C1([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C1([H])[H] 0.000 description 2
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N diphenyl Chemical compound C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- VANNPISTIUFMLH-UHFFFAOYSA-N glutaric anhydride Chemical compound O=C1CCCC(=O)O1 VANNPISTIUFMLH-UHFFFAOYSA-N 0.000 description 2
- LEQAOMBKQFMDFZ-UHFFFAOYSA-N glyoxal Chemical compound O=CC=O LEQAOMBKQFMDFZ-UHFFFAOYSA-N 0.000 description 2
- WNLRTRBMVRJNCN-UHFFFAOYSA-N hexanedioic acid Natural products OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 150000002460 imidazoles Chemical class 0.000 description 2
- 239000001095 magnesium carbonate Substances 0.000 description 2
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 2
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 2
- 229960001708 magnesium carbonate Drugs 0.000 description 2
- 235000014380 magnesium carbonate Nutrition 0.000 description 2
- VYKXQOYUCMREIS-UHFFFAOYSA-N methylhexahydrophthalic anhydride Chemical compound C1CCCC2C(=O)OC(=O)C21C VYKXQOYUCMREIS-UHFFFAOYSA-N 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 229920001296 polysiloxane Polymers 0.000 description 2
- 229920002050 silicone resin Polymers 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 150000003512 tertiary amines Chemical class 0.000 description 2
- 239000004408 titanium dioxide Substances 0.000 description 2
- IMNIMPAHZVJRPE-UHFFFAOYSA-N triethylenediamine Chemical compound C1CN2CCN1CC2 IMNIMPAHZVJRPE-UHFFFAOYSA-N 0.000 description 2
- SRPWOOOHEPICQU-UHFFFAOYSA-N trimellitic anhydride Chemical compound OC(=O)C1=CC=C2C(=O)OC(=O)C2=C1 SRPWOOOHEPICQU-UHFFFAOYSA-N 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- KNDQHSIWLOJIGP-UMRXKNAASA-N (3ar,4s,7r,7as)-rel-3a,4,7,7a-tetrahydro-4,7-methanoisobenzofuran-1,3-dione Chemical compound O=C1OC(=O)[C@@H]2[C@H]1[C@]1([H])C=C[C@@]2([H])C1 KNDQHSIWLOJIGP-UMRXKNAASA-N 0.000 description 1
- FUIQBJHUESBZNU-UHFFFAOYSA-N 2-[(dimethylazaniumyl)methyl]phenolate Chemical compound CN(C)CC1=CC=CC=C1O FUIQBJHUESBZNU-UHFFFAOYSA-N 0.000 description 1
- JGAOCGFZZBDROL-UHFFFAOYSA-N 3-(2,4,6-trioxo-1,3,5-triazinan-1-yl)propanoic acid Chemical class OC(=O)CCN1C(=O)NC(=O)NC1=O JGAOCGFZZBDROL-UHFFFAOYSA-N 0.000 description 1
- BIWNRLSESKYQDR-UHFFFAOYSA-N 5-methyl-3-oxatricyclo[5.2.1.01,5]decane-2,4-dione Chemical compound C1C(C2)CCC32C1(C)C(=O)OC3=O BIWNRLSESKYQDR-UHFFFAOYSA-N 0.000 description 1
- ULKLGIFJWFIQFF-UHFFFAOYSA-N 5K8XI641G3 Chemical compound CCC1=NC=C(C)N1 ULKLGIFJWFIQFF-UHFFFAOYSA-N 0.000 description 1
- LQOPXMZSGSTGMF-UHFFFAOYSA-N 6004-79-1 Chemical compound C1CC2C3C(=O)OC(=O)C3C1C2 LQOPXMZSGSTGMF-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 description 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 1
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 1
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- AYJRCSIUFZENHW-DEQYMQKBSA-L barium(2+);oxomethanediolate Chemical compound [Ba+2].[O-][14C]([O-])=O AYJRCSIUFZENHW-DEQYMQKBSA-L 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 150000001642 boronic acid derivatives Chemical class 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- GAURFLBIDLSLQU-UHFFFAOYSA-N diethoxy(methyl)silicon Chemical compound CCO[Si](C)OCC GAURFLBIDLSLQU-UHFFFAOYSA-N 0.000 description 1
- PKTOVQRKCNPVKY-UHFFFAOYSA-N dimethoxy(methyl)silicon Chemical compound CO[Si](C)OC PKTOVQRKCNPVKY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- SBRXLTRZCJVAPH-UHFFFAOYSA-N ethyl(trimethoxy)silane Chemical compound CC[Si](OC)(OC)OC SBRXLTRZCJVAPH-UHFFFAOYSA-N 0.000 description 1
- 229940015043 glyoxal Drugs 0.000 description 1
- NGAZZOYFWWSOGK-UHFFFAOYSA-N heptan-3-one Chemical compound CCCCC(=O)CC NGAZZOYFWWSOGK-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 239000000976 ink Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005040 ion trap Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 150000003018 phosphorus compounds Chemical class 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellityc acid Natural products OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 1
- 150000003242 quaternary ammonium salts Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000002798 spectrophotometry method Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- RINCXYDBBGOEEQ-UHFFFAOYSA-N succinic anhydride Chemical compound O=C1CCC(=O)O1 RINCXYDBBGOEEQ-UHFFFAOYSA-N 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000002759 woven fabric Substances 0.000 description 1
- PAPBSGBWRJIAAV-UHFFFAOYSA-N ε-Caprolactone Chemical compound O=C1CCCCCO1 PAPBSGBWRJIAAV-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/20—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the epoxy compounds used
- C08G59/32—Epoxy compounds containing three or more epoxy groups
- C08G59/3236—Heterocylic compounds
- C08G59/3245—Heterocylic compounds containing only nitrogen as a heteroatom
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/42—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof
- C08G59/4215—Polycarboxylic acids; Anhydrides, halides or low molecular weight esters thereof cycloaliphatic
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/68—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used
- C08G59/688—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the catalysts used containing phosphorus
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D163/00—Coating compositions based on epoxy resins; Coating compositions based on derivatives of epoxy resins
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0274—Optical details, e.g. printed circuits comprising integral optical means
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
- H05K3/285—Permanent coating compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01004—Beryllium [Be]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09818—Shape or layout details not covered by a single group of H05K2201/09009 - H05K2201/09809
- H05K2201/09881—Coating only between conductors, i.e. flush with the conductors
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10007—Types of components
- H05K2201/10106—Light emitting diode [LED]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/20—Details of printed circuits not provided for in H05K2201/01 - H05K2201/10
- H05K2201/2054—Light-reflecting surface, e.g. conductors, substrates, coatings, dielectrics
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/24—Structurally defined web or sheet [e.g., overall dimension, etc.]
- Y10T428/24802—Discontinuous or differential coating, impregnation or bond [e.g., artwork, printing, retouched photograph, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31511—Of epoxy ether
- Y10T428/31515—As intermediate layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Wood Science & Technology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Led Device Packages (AREA)
- Paints Or Removers (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
本发明的涂布剂,其是用于光半导体元件搭载用基板的涂布剂,含有热固化性树脂和白色颜料,所述白色颜料为氧化钛。
Description
本申请是申请人于2009年9月25日提出的国际申请号为PCT/JP2009/066633(2011年3月29日进入中国国家阶段,申请号:200980138429.4)、发明名称为“涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置”的国际申请的分案。
技术领域
本发明涉及用于导体构件之间等的涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置。
背景技术
一直以来,作为发光二极管(LED)安装用打印配线板,已知使用将含二氧化钛的环氧树脂含浸于玻璃织布后进行加热固化的积层板或者使用除了二氧化钛还含有氧化铝的环氧树脂的积层板等(例如参照专利文献1~3)。
【专利文献】
【专利文献1】日本特开平10-202789号公报
【专利文献2】日本特开2003-60321号公报
【专利文献3】日本特开2008-1880号公报
发明内容
发明预解决的技术问题
但是,上述专利文献所记载的现有环氧树脂积层板即便是积层板阶段的反射率为大致满足的水平,由于打印配线板的制造工序或LED安装工序中的加热处理或者LED安装后的使用时的加热或光照射,也有反射率的降低增大的情况。因而,在LED安装后的使用时,会发生放热所导致的变色,作为光半导体装置使用时有可靠性降低的问题,需要进一步的改善。
本发明鉴于上述现有技术所具有的课题而完成,其目的在于提供能够形成耐热性高、可见光区域下光反射率高、另外由于加热处理或光照射处理所导致的光反射率的降低也很少的光半导体元件搭载用基板等基板的用于导体构件之间等的涂布剂,使用该涂布剂的光半导体元件搭载用基板及光半导体装置。
用于解决技术问题的方法
为了达成上述目的,本发明提供用于导体构件之间的涂布剂,其为含有热固化性树脂、白色颜料、固化剂和固化催化剂的用于导体构件之间的涂布剂,所述白色颜料的含量以所述涂布剂的固态成分总体积为基准为10~85体积%,将由所述涂布剂构成的固化物在200℃下放置24小时后的白色度为75以上。
利用该涂布剂,通过在具有上述组成的同时满足上述的白色度的条件,通过在导体构件之间使用,可形成具有优异耐热性、可见光区域的优异光反射率、可充分抑制由于加热处理或光照射处理所导致的光反射率降低的光半导体元件搭载用基板等的基板。
这里,所述热固化性树脂优选为环氧树脂。
本发明另外提供用于导体构件之间的涂布剂,其为含有环氧树脂、白色颜料、酸酐系固化剂和固化催化剂的用于导体构件之间的涂布剂,所述白色颜料的含量以所述涂布剂的固态成分总体积为基准为10~85体积%、所述环氧树脂是由该环氧树脂和所述酸酐系固化剂构成的固化物在厚度1mm下时相对于波长365nm光的透射率为75%以上。
利用该涂布剂,通过使用具有上述组成的同时满足上述透射率的条件的环氧树脂,通过在导体构件之间使用,可形成具有优异耐热性和可见光区域的优异光反射率,可充分抑制由于加热处理或光照射处理所导致的光反射率降低的光半导体元件搭载用基板等基板。
上述本发明涂布剂中使用的环氧树脂优选为脂环式环氧树脂或具有异氰脲酸酯骨架的环氧树脂。作为环氧树脂,通过使用脂环式环氧树脂或具有异氰脲酸酯骨架的环氧树脂,可以形成能充分抑制由于加热或光照射所导致的光反射率的降低的光半导体元件搭载用基板等基板。
另外,本发明的涂布剂中,所述白色颜料优选为选自氧化钛、二氧化硅、氧化铝、氧化镁、氧化锑、氢氧化铝、硫酸钡、碳酸镁、碳酸钡及氢氧化镁的至少1种。通过使用这些白色颜料,可以形成在可见光区域内具有更优异的光反射率的光半导体元件搭载用基板等基板。
另外,本发明的涂布剂中,优选所述白色颜料的平均粒径为0.1~50μm。通过使用平均粒径为所述范围内的白色颜料,可以形成在可见光区域内具有更优异的光反射率的光半导体元件搭载用基板等基板。
本发明还提供光半导体元件搭载用基板,其具备基材、形成于该基材表面的多个导体构件、形成于多个所述导体构件之间的由上述本发明的用于导体构件之间的涂布剂构成的白色树脂层。在多个导体构件之间形成由涂布剂构成的白色树脂层的光半导体元件搭载用基板具有优异的耐热性和可见光区域内的优异光反射率,充分地抑制了由于加热处理或光照射处理所导致的光反射率的降低。
本发明还提供在上述本发明的光半导体元件搭载用基板上搭载光半导体元件而成的光半导体装置。该光半导体装置由于具备上述本发明的光半导体元件搭载用基板,因而具有优异的耐热性和可见光区域内的优异的光反射率、充分地抑制由于加热处理或光照射处理所导致的光反射率的降低。
本发明还提供一种涂布剂,其为用于光半导体元件搭载用基板的涂布剂,其含有热固化性树脂和白色颜料,所述白色颜料为氧化钛。
这里,所述热固化性树脂优选含有脂环式环氧树脂或具有异氰脲酸酯骨架的环氧树脂。
本发明还提供光半导体元件搭载用基板,其具备基材、形成于该基材表面的多个导体构件、形成于所述基材表面的由上述本发明的涂布剂构成的白色树脂层。
本发明还提供在上述本发明的光半导体元件搭载用基板上搭载光半导体元件而成的光半导体装置。
本发明还提供光半导体元件搭载用基板,其为具备基材、设置于该基材表面的白色树脂层和导体构件的光半导体元件搭载用基板,所述白色树脂层为含有环氧树脂和白色颜料的涂布剂的固化物。
本发明还提供在上述本发明的光半导体元件搭载用基板上搭载光半导体元件而成的光半导体装置。
发明的效果
本发明可以提供能够形成耐热性高、可见光区域下的光反射率高、由于加热处理或光照射处理所导致的光反射率的降低少的光半导体元件搭载用基板等基板的用于导体构件之间等的涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置。
附图说明
【图1】表示本发明光半导体装置的优选一实施方式的模式截面图。
【图2】表示本发明光半导体装置的其他优选一实施方式的立体图。
【图3】图2所示光半导体装置的模式截面图。
【图4】图2所示光半导体装置的平面图。
具体实施方式
以下,根据情况一边参照附图一边详细地说明本发明的优选实施方式。予以说明,附图中相同或相当的部分带有相同符号,重复的说明省略。另外,附图的尺寸比例并非限定于图示的比例。
(涂布剂)
本发明第一实施方式所涉及的涂布剂为含有热固化性树脂、白色颜料、固化剂和固化催化剂的涂布剂,所述白色颜料的含量以所述涂布剂的固态成分总体积为基准为10~85体积%,将由所述涂布剂构成的固化物在200℃下放置24小时后的白色度为75以上。
所述白色度由下式(1)求得。白色度可以使用分光测色计测定。
W=100-sqr〔(100-L)2+(a2+b2)〕 (1)
(W:白色度、L:明度、a:色调、b:彩度)
另外,由所述涂布剂构成的固化物的固化条件只要是能够使涂布剂充分地固化的条件则无特别限定,优选为130~180℃下进行0.5~10小时的条件。
本发明的第一实施方式所涉及的涂布剂中,所述白色度有必要为75以上、更优选为80以上、特别优选为90以上。白色度可以通过白色颜料的配合量、白色颜料的种类的选择、白色颜料的粒径的选择进行调整。通过提高白色度,可以使可见光线区域的光的反射率均一、即可提高显色性。另外,为了提高白色度,作为优选的白色颜料可举出氧化钛。氧化钛除了可提高白色度之外,由于是隐蔽性高的白色颜料,因而可以不在基材上另外设置遮光层,即可抑制光所导致的基材的劣化。
另外,本发明第二实施方式所涉及的涂布剂为含有环氧树脂、白色颜料、酸酐系固化剂和固化催化剂的涂布剂,所述白色颜料的含量以所述涂布剂的固态成分总体积为基准为10~85体积%,所述环氧树脂是由该环氧树脂和所述酸酐系固化剂构成的固化物在厚度1mm下相对于波长365nm的光的透射率为75%以上的物质。
所述透射率可以使用分光光度计测定。
在由所述环氧树脂和酸酐系固化剂构成的固化物中,环氧树脂与酸酐系固化剂的配合比与本发明第二实施方式的涂布剂中的环氧树脂与酸酐系固化剂的配合比相同。
另外,由所述环氧树脂和酸酐系固化剂构成的固化物的固化条件只要是能够使环氧树脂和酸酐系固化剂的混合物充分地固化的条件则无特别限定,优选为在130~180℃下进行0.5~10小时的条件。
本发明第二实施方式所涉及的涂布剂中,所述透射率有必要为75%以上、更优选为80%以上、特别优选为85%以上。所述透射率高是指树脂的光的吸收少。因而,通过提高所述透射率,可以降低树脂的着色劣化、可以减少涂布剂的固化物由于光所导致的劣化。由此,可以高度维持涂布剂的固化物的白色度,可以提供显色性高的封装。
通过上述本发明的第一及第二实施方式所涉及的涂布剂,通过在导体构件之间使用,可形成具有优异耐热性和可见光区域的优异光反射率、可充分抑制由于加热处理或光照射处理所导致的光反射率降低的光半导体元件搭载用基板等基板。
本发明的第三实施方式所涉及的涂布剂为用于光半导体元件搭载用基板的涂布剂,其含有热固化性树脂和白色颜料,所述白色颜料为氧化钛。如上所述,氧化钛除了可以提高白色度之外,还是隐蔽性很高的白色颜料。因而,通过使用所述涂布剂,可以不在基材上另外设置遮光层,即可抑制由于光所导致的基材的劣化。
以下,对上述本发明的涂布剂所使用的各成分进行说明。
作为本发明中使用的热固化性树脂,例如可举出环氧树脂、氨酯树脂、有机硅树脂、聚酯树脂它们的改性树脂等。其中,优选环氧树脂、更优选脂环式环氧树脂及具有异氰脲酸酯骨架的环氧树脂。另外,环氧树脂从更充分抑制由于光照射所导致的光反射率降低的观点出发,优选尽量没有芳香环的物质。另外,热固化性树脂优选选择其固化物的透明性高的物质。另外,热固化性树脂优选着色较少的物质。予以说明,本发明第二实施方式所涉及的涂布剂中,热固化性树脂有必要为环氧树脂。
作为脂环式环氧树脂,例如可举出3,4-环氧基环己基甲基-3’,4’-环氧基环己烷羧酸酯{商品名:塞洛奇塞特(セロキサイド)2021、塞洛奇塞特2021A、塞洛奇塞特2021P(以上大赛璐化学工业株式会社制)、ERL4221、ERL4221D、ERL4221E(以上陶氏化学日本株式会社制)}、双(3,4-环氧基环己基甲基)己二酸酯{商品名:ERL4299(陶氏化学日本株式会社制)、EXA7015(大日本墨液化学工业株式会社制)}、1-环氧基乙基-3,4-环氧基环己烷、艾匹考特(エピコ一ト)YX8000、艾匹考特YX8034、艾匹考特YL7170(以上日本环氧树脂株式会社制)、塞洛奇塞特2081、塞洛奇塞特3000、艾泊理得(エポリ一ド)GT301、艾泊理得GT401、EHPE3150(以上大赛璐化学工业株式会社制)等。优选的脂环式环氧树脂可举出3,4-环氧基环己基甲基-3’,4’-环氧基环己烷羧酸酯、双(3,4-环氧基环己基甲基)己二酸酯、艾匹考特YX8000、艾匹考特YX8034、艾泊理得GT301、艾泊理得GT401、EHPE3150。
作为具有异氰脲酸酯骨架的环氧树脂,例如可举出异氰脲酸酯三缩水甘油酯(商品名:TEPIC-S、日产化学工业株式会社制)。
作为上述以外的环氧树脂,可举出双酚A型环氧树脂、双酚S型环氧树脂等。具体地说,例如可举出艾匹考特828、YL980(日本环氧树脂株式会社制)、YSLV120TE(东都化成株式会社制)等。
热固化性树脂可单独使用1种或者可适当混合2种以上。
涂布剂中的热固化性树脂的含量以涂布剂的固态成分总量为基准,优选为5~30质量%、更优选为10~20质量%。该含量小于5质量%时,有流动性降低、易于变为不均匀的固化物的倾向;超过30质量%时,有反射率降低的倾向。
作为本发明中使用的固化剂,只要是与所述热固化性树脂反应的物质则可没有特别限定地使用,优选着色较少的物质。作为固化剂,例如可举出酸酐系固化剂、异氰脲酸衍生物、酚系固化剂等。予以说明,本发明第二实施方式所涉及的涂布剂中,固化剂有必要为酸酐系固化剂。
作为酸酐系固化剂,例如可举出邻苯二甲酸酐、马来酸酐、偏苯三酸酐、均苯四酸酐、六氢邻苯二甲酸酐、四氢邻苯二甲酸酐、甲基纳迪克酸酐、纳迪克酸酐、戊二酸酐、二甲基戊二酸酐、二乙基戊二酸酐、琥珀酸酐、甲基六氢邻苯二甲酸酐、甲基四氢邻苯二甲酸酐、降冰片烯二羧酸酐、甲基降冰片烯二羧酸酐、降冰片烷二羧酸酐、甲基降冰片烷二羧酸酐。
作为异氰脲酸衍生物,可举出1,3,5-三(1-羧基甲基)异氰脲酸酯、1,3,5-三(2-羧基乙基)异氰脲酸酯、1,3,5-三(3-羧基丙基)异氰脲酸酯、1,3-双(2-羧基乙基)异氰脲酸酯等。
本发明中,上述固化剂中,优选使用邻苯二甲酸酐、偏苯三酸酐、六氢邻苯二甲酸酐、四氢邻苯二甲酸酐、甲基六氢邻苯二甲酸酐、甲基四氢邻苯二甲酸酐、戊二酸酐、二甲基戊二酸酐、二乙基戊二酸酐、1,3,5-三(3-羧基丙基)异氰脲酸酯。
固化剂的分子量优选为100~400,优选无色~淡黄色的物质。
固化剂可单独使用1种或组合使用2种以上。
涂布剂中的固化剂的含量相对于热固化性树脂100质量份优选为50~200质量份、更优选为100~150质量份。该含量小于50质量份时,有固化不充分进行的倾向;超过200质量份时,有固化物变脆、变得易于着色的倾向。
作为本发明中使用的固化催化剂(固化促进剂)并无特别限定,例如可举出1,8-二氮杂-二环(5,4,0)十一烯-7、三乙二胺、三-2,4,6-二甲基氨基甲基苯酚等叔胺类,2-乙基-4甲基咪唑、2-甲基咪唑等咪唑类,三苯基磷、四苯基硼四苯基磷、四正丁基O,O-二乙基二硫代磷酸膦、四正丁基膦四氟硼酸盐、四正丁基膦四苯基硼酸盐等磷化合物、季铵盐、有机金属盐类及它们的衍生物等。这些物质可单独使用1种或者组合使用2种以上。这些固化促进剂中优选使用叔胺类、咪唑类、磷化合物。
涂布剂中的固化催化剂(固化促进剂)的含量相对于热固化性树脂100质量份优选为0.01~8质量份、更优选为0.1~3质量份。固化促进剂的含量小于0.01质量份时,有无法获得充分固化促进效果的情况;超过8质量份时,有所得成形体可见变色的情况。
作为本发明中使用的白色颜料,可举出二氧化硅、氧化铝、氧化镁、氧化锑、氧化钛、氧化锆、氢氧化铝、氢氧化镁、硫酸钡、碳酸镁、碳酸钡、无机中空粒子等。这些物质可单独使用1种或者组合使用2种以上。其中,作为白色颜料,从导热性、光反射特性、成型性、阻燃性的观点出发,优选为选自二氧化硅、氧化铝、氧化镁、氧化锑、氧化钛、氧化锆、氢氧化铝、氢氧化镁的1种或2种以上的混合物。作为无机中空粒子,例如可举出硅酸钠玻璃、铝硅酸玻璃、硼硅酸钠玻璃、白砂等。另外,从光反射特性的观点出发,作为白色颜料优选使用折射率与热固化性树脂相差大的物质。作为折射率与热固化性树脂相差大的白色颜料,例如优选使用氧化钛或无机中空粒子,特别优选使用氧化钛。
白色颜料的粒径优选平均粒径为0.1~50μm的范围、更优选为0.1~10μm的范围。该平均粒径小于0.1μm时,有粒子易于凝集、分散性变差的倾向;超过50μm时,有难以充分地获得反射特性的倾向。白色颜料的平均粒径使用激光式粒度分布计、例如Beckman Coulter LS 13 320测定。
另外,从阻燃效果的观点出发,作为白色颜料优选氢氧化铝或氢氧化镁。另外,这些阻燃剂为白色,在不对反射率造成影响的方面优选。另外,从耐湿可靠性的观点出发,优选离子性杂质少的氢氧化铝或氢氧化镁,例如优选Na化合物的含量为0.2质量%以下者。
氢氧化铝或氢氧化镁的平均粒径并无特别限定,从阻燃性和流动性的观点出发,优选为0.1~50μm、更优选为0.1~10μm。
涂布剂中的氢氧化铝或氢氧化镁的含量以白色颜料总量为基准,优选为10~30质量%、更优选为20~30质量%。该含量小于10质量%时,有难以充分地获得阻燃性的倾向;超过30质量%时,有对流动性或固化性造成不良影响的倾向。
涂布剂中的白色颜料的含量(填充量)以涂布剂的固态成分总体积为基准,有必要为10~85体积%、更优选为15~70体积%、特别优选为20~50体积%。该含量小于10体积%时,有光反射特性降低的倾向;超过85体积%时,有成型性变差、基板的制作变难的倾向。
另外,本发明的涂布剂中为了提高白色颜料的分散性,还可添加偶合剂。作为偶合剂,可举出硅烷偶合剂或钛酸酯系偶合剂等,从着色的观点出发,优选环氧基硅烷系的偶合剂。作为环氧基硅烷系的偶合剂,可举出3-环氧丙氧基丙基三甲氧基硅烷、3-环氧丙氧基丙基三乙氧基硅烷、3-环氧丙氧基丙基甲基二乙氧基硅烷、3-环氧丙氧基丙基甲基二甲氧基硅烷、2-(3,4-环氧基环己基)乙基三甲氧基硅烷等。
涂布剂中的偶合剂的含量相对于白色颜料100质量份优选为5质量份以下。
另外,在本发明的涂布剂中作为其他的添加剂还可添加抗氧化剂、光稳定剂、紫外线吸收剂、脱模剂、离子捕获剂、可挠化材料等。作为可挠化剂,优选丙烯酸树脂、聚氨酯树脂、有机硅树脂、聚酯树脂、有机硅·己内酯嵌段共聚物等。
本发明的涂布剂中还可添加溶剂。作为溶剂,例如可举出丙酮、甲乙酮、乙基丁基酮等。具有上述组成的本发明的涂布剂即便是无溶剂的也是液状,可以不添加溶剂进行成膜。为无溶剂时,在成膜时由于可省略进行B阶段化的工序,因而可以简化工序,同时可以消除伴随B阶段化的光反射率降低等问题。
本发明的涂布剂优选25℃的粘度为5~200Pa·s、更优选为10~50Pa·s。涂布剂的粘度利用E型粘度计测定。粘度小于5Pa·s时,有厚度易于发生不均的倾向;超过200Pa·s时,有印刷性降低的倾向。
(光半导体元件搭载用基板及光半导体装置)
本发明的光半导体元件搭载用基板具备使用上述本发明的涂布剂在基材上的多个导体构件(连接端子)之间所形成的白色树脂层。另外,本发明的光半导体元件搭载用基板具备基材、形成于该基材表面的多个导体构件、形成于基材表面的由上述本发明的涂布剂构成的白色树脂层。或者,本发明的光半导体元件搭载用基板为具备基材、设置于该基材表面的白色树脂层和导体构件的光半导体元件搭载用基板,白色树脂层为含有环氧树脂和白色颜料的涂布剂的固化物。另外,本发明的光半导体装置为在所述本发明的光半导体元件搭载用基板上搭载光半导体元件而成。
图1为表示本发明的光半导体装置的优选一实施方式的模式截面图。如图1所示,光半导体装置100是在具备基材1、形成于该基材1表面的多个导体构件2和形成于多个导体构件(连接端子)2之间的由上述本发明的涂布剂构成的白色树脂层3的光半导体元件搭载用基板上搭载光半导体元件10并按照将该光半导体元件10密封的方式设有透明的密封树脂4的表面安装型发光二极管。光半导体装置100中,光半导体元件10借助粘接层8与导体构件2粘接,通过导丝9与导体构件2电连接。
作为基材1,可以没有特别限定地使用用于光半导体元件搭载用基板的基材,例如可举出环氧树脂积层板等树脂积层板等。
导体构件2作为连接端子发挥功能,例如可以通过对铜箔进行光刻蚀的方法等公知方法形成。
光半导体元件搭载用基板可如下制作:将本发明的涂布剂涂布在基材1上的多个导体构件2之间,进行加热固化,形成由所述涂布剂构成的白色树脂层3,从而制作。
作为本发明的涂布剂在基板1上的涂布方法,例如可使用印刷法、模涂法、帘涂法、喷雾涂布法、辊涂法等涂布方法。
作为对涂布剂的涂膜进行加热固化时的加热条件并无特别限定,例如优选可以在130~180℃、30~600分钟的条件下进行加热。
之后,利用抛光等将多余辅助在导体构件2表面上的树脂成分除去,使导体构件2所构成的电路露出,制成光半导体元件搭载用基板。
另外,为了确保白色树脂层3与导体构件2的密合性,还优选对导体构件2进行氧化还原处理或CZ处理(メック株式会社制)等粗化处理。
上述本发明的光半导体元件搭载用基板由于其表面仅由白色树脂层3和导体构件2形成,因而通过使用该光半导体元件搭载用基板,可获得充分抑制了热或光劣化的长寿命的光半导体装置。另外,上述本发明的光半导体元件搭载用基板中,由于白色树脂层3仅配置在导体构件2之间,因而与例如在基材1与导体构件2之间的基材1整个表面上形成白色树脂层3的情况相比,可充分地抑制光半导体元件搭载用基板发生翘曲。
图2为表示本发明的光半导体装置的其他优选一实施方式的立体图、图3为图2所示光半导体装置的模式截面图、图4为图2所示光半导体装置的平面图。
如图2~4所示,光半导体装置200是在具备基材11、形成于该基材1表面的多个导体构件12a、12b和形成于基材11的表面的由上述本发明的涂布剂构成的白色树脂层13的光半导体元件搭载用基板上搭载光半导体元件20,按照将该光半导体元件20密封的方式设有透明的密封树脂14的表面安装型发光二极管。光半导体装置200中,光半导体元件20粘接在导体构件12a上,通过导丝19与导体构件12b电连接。其中,如图3所示,导体构件12a,12b借助贯通基材11内的穿通孔(未图示),与设于基材11里面侧的导体构件12c、12d分别连通。构成光半导体装置200的各构件使用与构成图1所示光半导体装置100的各构件相同的物质。光半导体装置200中,由于光半导体元件搭载用基板的表面仅由白色树脂层3和导体构件2形成,因而获得与上述光半导体装置100同样的效果。
以上对本发明的优选实施方式详细地进行说明,但本发明并非限定于所述实施方式。
【实施例】
以下,通过实施例详细地叙述本发明,但本发明的范围并非限定于这些实施例。
[实施例1]
将作为热固化性树脂(环氧树脂)的异氰脲酸三缩水甘油酯(商品名:TEPIC-S、日产化学工业株式会社制)100质量份、作为固化剂(酸酐系固化剂)的甲基六氢邻苯二甲酸酸酐(商品名:HN-5500F、日立化成工业株式会社制)150质量份、作为白色颜料的氧化钛(商品名:FTR-700、堺化学工业株式会社制、平均粒径:0.2μm)470质量份、作为固化催化剂(固化促进剂)的四丁基O,O-二乙基二硫代磷酸膦(商品名:PX-4ET、日本化学工业株式会社制)1.5质量份混合,在混炼温度20~30℃、混炼时间10分钟的条件下进行轧辊混炼,制作白色的涂布剂。所得白色涂布剂的粘度在25℃下为10Pa·s。
[实施例2]
将作为热固化性树脂(环氧树脂)的脂环式环氧树脂的塞洛奇塞特2021P(商品名,大赛璐化学工业株式会社制)100质量份、甲基六氢邻苯二甲酸酸酐(商品名:HN-5500F、日立化成工业株式会社制)120质量份、氧化钛(商品名:FTR-700、堺化学工业株式会社制)410质量份、四丁基O,O-二乙基二硫代磷酸膦(商品名:PX-4ET,日本化学工业株式会社制)1.5质量份混合,混炼温度20~30℃、混炼时间10分钟的条件进行轧辊混炼,制作白色的涂布剂。所得白色涂布剂的粘度在25℃下为8Pa·s。
[实施例3]
将异氰脲酸三缩水甘油酯(商品名:TEPIC-S、日产化学工业株式会社制)50质量份、塞洛奇塞特2021P(商品名、大赛璐化学工业株式会社制)50质量份、甲基六氢邻苯二甲酸酸酐(商品名:HN-5500F、日立化成工业株式会社制)135质量份、氧化钛(商品名:FTR-700、堺化学工业株式会社制)440质量份、四丁基O,O-二乙基二硫代磷酸膦(商品名:PX-4ET、日本化学工业株式会社制)1.5质量份混合,在混炼温度20~30℃、混炼时间10分钟的条件进行轧辊混炼,制作白色的涂布剂。所得白色涂布剂的粘度在25℃下为12Pa·s。
[实施例4]
除了将环氧树脂(异氰脲酸三缩水甘油酯)改变为双酚A型环氧树脂(商品名:YL980、日本环氧树脂株式会社制)之外,与实施例1同样地制作白色的涂布剂。所得白色涂布剂的粘度在25℃下为8Pa·s。
[实施例5]
除了将环氧树脂(异氰脲酸三缩水甘油酯)改变为双酚S型环氧树脂(商品名:YSLV120TE、东都化成株式会社制)之外,与实施例1同样地制作白色的涂布剂。所得白色涂布剂的粘度在25℃下为10Pa·s。
[比较例1]
除了将环氧树脂(异氰脲酸三缩水甘油酯)改变为联苯型环氧树脂之外,与实施例1同样地制作白色的涂布剂。所得白色涂布剂的粘度在25℃下为12Pa·s。
(光透射率的测定)
以分别相同于实施例1~5及比较例1制作的白色涂布剂的配合比,仅混合环氧树脂及固化剂。利用浇铸法将该混合物涂布在脱模处理PET模具上,在150℃下进行加热固化120分钟,将脱模处理PET剥离,制作由环氧树脂及固化剂形成的厚度1mm的固化膜。利用分光光度计(商品名:V-570型分光光度计、日本分光株式会社制)测定该固化膜相对于波长365nm光的透射率。将其结果示于表1。
【表1】
(白色度的测定)
利用浇铸法将实施例1~5及比较例1中分别制作的白色涂布剂涂布在带Al箔的模具上,在150℃下将其加热固化120分钟,将Al箔剥离,制作由白色涂布剂构成的厚度1mm的固化膜。对于该固化膜,使用分光测色计(商品名:CM-508d、ミノルタ社制)测定初期及在200℃放置24小时后的L(明度)、a·b(色调·彩度)、白色度及波长460nm光的反射率。将其结果示于表2(初期)及表3(在200℃下放置24小时后)。
【表2】
初期 | 光反射率[%] | L | a | b | 白色度 |
实施例1 | 90.05 | 95.93 | -0.39 | 1.90 | 95.5 |
实施例2 | 91.11 | 96.37 | -0.26 | 1.79 | 95.9 |
实施例3 | 90.65 | 96.03 | -0.3 | 1.80 | 95.6 |
实施例4 | 88.10 | 95.08 | -0.29 | 1.90 | 94.7 |
实施例5 | 90.26 | 96.14 | -0.28 | 1.85 | 95.7 |
比较例1 | 90.61 | 96.26 | -0.31 | 2.14 | 95.7 |
【表3】
(着色的有无及光反射率的评价)
对于在所述白色度的测定中制作的固化膜,通过目视确认着色的有无。没有着色(为白色)时为“A”、有着色时为“B”。另外,使用分光测色计(商品名:CM-508d、ミノルタ社制)测定所述固化膜的波长460nm光的反射率。将它们的结果示于表4。
(热·光处理后的着色的有无及光反射率的评价)
对于在所述白色度的测定中制作的固化膜,在200℃的温度下以0.22W/cm2的放射照度照射波长240~380nm的光2小时。在该热·光处理后,利用目视确认着色的有无。没有着色(为白色)时为“A”、有着色时为“B”。另外,使用分光测色计(商品名:CM-508d、ミノルタ社制)测定所述固化膜的波长460nm光的反射率。将它们的结果示于表4。
【表4】
如表4所示,实施例1~5的白色涂布剂没有由于加热处理或光照射处理所导致的着色、确认充分地抑制了光反射率的降低。
(光半导体装置的制作)
利用CZ处理对通过光刻形成有由铜箔构成的导体电路的光半导体元件搭载用基板的导体电路粗化后,利用印刷法以厚度50μm涂布实施例1~5及比较例1的白色涂布剂,在150℃下加热固化2小时,进而通过抛光将附着在导体电路表面上的多余树脂除去,使导体电路露出,从而在导体电路之间形成白色树脂层。之后,对导体电路实施镀镍、镀银,将光半导体元件管芯焊接。进而,利用引线键合将光半导体元件与导体电路电连接,用透明密封树脂进行密封,制作光半导体装置。
利用在基板表面的导体构件之间形成有由本发明涂布剂构成的白色树脂层的光半导体元件搭载用基板,仅通过白色树脂层和导体电路即可形成基板表面,因而可获得充分抑制了热或光劣化的长寿命光半导体装置。
【产业上的利用可能性】
如以上说明所示,本发明能够提供可形成耐热性高、可见光区域下的光反射率高、由于加热处理或光照射处理所导致的光反射率的降低少的光半导体元件搭载用基板等基板的用于导体构件之间等的涂布剂,使用该涂布剂的光半导体元件搭载用基板及光半导体装置。
【符号说明】
1,11...基材、2,12...导体构件、3,13...白色树脂层、4,14...密封树脂、8...粘结层、9,19...导丝、10,20...光半导体元件、100,200...光半导体装置。
Claims (6)
1.一种涂布剂,其是用于光半导体元件搭载用基板的涂布剂,含有热固化性树脂和白色颜料,所述白色颜料为氧化钛。
2.根据权利要求1所述的涂布剂,其中,所述热固化性树脂含有脂环式环氧树脂或具有异氰脲酸酯骨架的环氧树脂。
3.一种光半导体元件搭载用基板,其具备:基材、形成于所述基材的表面的多个导体部件、形成于所述基材的表面的由权利要求1或2所述的涂布剂构成的白色树脂层。
4.一种光半导体装置,其为在权利要求3所述的光半导体元件搭载用基板上搭载光半导体元件而成。
5.一种光半导体元件搭载用基板,其具备:基材、形成于所述基材的表面的白色树脂层和导体部件,
所述白色树脂层为含有环氧树脂和白色颜料的涂布剂的固化物。
6.一种光半导体装置,其为在权利要求5所述的光半导体元件搭载用基板上搭载光半导体元件而成。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008253226 | 2008-09-30 | ||
JP2008-253226 | 2008-09-30 | ||
JP2009-013319 | 2009-01-23 | ||
JP2009013319 | 2009-01-23 | ||
CN2009801384294A CN102165011B (zh) | 2008-09-30 | 2009-09-25 | 涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801384294A Division CN102165011B (zh) | 2008-09-30 | 2009-09-25 | 涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102863872A true CN102863872A (zh) | 2013-01-09 |
CN102863872B CN102863872B (zh) | 2015-08-19 |
Family
ID=42073437
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801384294A Expired - Fee Related CN102165011B (zh) | 2008-09-30 | 2009-09-25 | 涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 |
CN201210364195.9A Expired - Fee Related CN102863872B (zh) | 2008-09-30 | 2009-09-25 | 涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN2009801384294A Expired - Fee Related CN102165011B (zh) | 2008-09-30 | 2009-09-25 | 涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 |
Country Status (8)
Country | Link |
---|---|
US (3) | US8343616B2 (zh) |
JP (1) | JP5429177B2 (zh) |
KR (2) | KR101372616B1 (zh) |
CN (2) | CN102165011B (zh) |
DE (1) | DE112009002625T5 (zh) |
MY (3) | MY155463A (zh) |
TW (1) | TWI505415B (zh) |
WO (1) | WO2010038673A1 (zh) |
Families Citing this family (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPWO2008059856A1 (ja) * | 2006-11-15 | 2010-03-04 | 日立化成工業株式会社 | 熱硬化性光反射用樹脂組成物及びその製造方法、並びにその樹脂組成物を用いた光半導体素子搭載用基板及び光半導体装置 |
JP5493389B2 (ja) * | 2009-02-27 | 2014-05-14 | 日亜化学工業株式会社 | 発光素子用回路基板及び発光装置並びにそれらの製造方法 |
US20110261847A1 (en) * | 2010-04-27 | 2011-10-27 | Chou Hsi-Yan | Light emitting devices |
WO2012002580A1 (ja) * | 2010-07-01 | 2012-01-05 | シチズンホールディングス株式会社 | Led光源装置及びその製造方法 |
CN102290519A (zh) * | 2011-09-09 | 2011-12-21 | 福建省万邦光电科技有限公司 | 高白度led封装用基板 |
JP5812845B2 (ja) * | 2011-12-19 | 2015-11-17 | 新光電気工業株式会社 | 発光素子搭載用パッケージ及び発光素子パッケージ並びにそれらの製造方法 |
JP2013211361A (ja) * | 2012-03-30 | 2013-10-10 | Sekisui Chem Co Ltd | 光半導体装置 |
JP5167424B1 (ja) * | 2012-04-18 | 2013-03-21 | 積水化学工業株式会社 | 光半導体装置用白色硬化性組成物及び光半導体装置用成形体 |
CN103716991A (zh) * | 2012-09-29 | 2014-04-09 | 欧司朗股份有限公司 | 用于led的pcb及其制造方法、发光装置及灯具 |
KR101719467B1 (ko) * | 2014-12-08 | 2017-03-24 | 주식회사 레오 | 회귀 반사 기능과 광·조도 조절이 되는 기능성 도료 |
DE102015101748A1 (de) * | 2015-02-06 | 2016-08-11 | Osram Opto Semiconductors Gmbh | Elektronisches Bauelement mit einem Werkstoff umfassend Epoxysilan-modifiziertes Polyorganosiloxan |
CN105061993A (zh) * | 2015-07-22 | 2015-11-18 | 江苏中鹏新材料股份有限公司 | 一种环保型白色环氧塑封料及其制备方法与用途 |
KR101699447B1 (ko) * | 2015-07-30 | 2017-02-14 | 주식회사 로스텍 | Led광원 유리 도광판 제조방법 |
KR20200133267A (ko) * | 2018-03-16 | 2020-11-26 | 훈츠만 어드밴스트 머티리얼스 라이센싱 (스위처랜드) 게엠베하 | 저장 안정성 조성물 및 경화성 수지 조성물 |
EP3825341A1 (de) * | 2019-11-22 | 2021-05-26 | Henkel AG & Co. KGaA | Matrixharz für laminate mit hoher transparenz, geringer vergilbung und hohen glasübergangstemperaturen |
US20240026170A1 (en) * | 2021-06-02 | 2024-01-25 | Fudan University | A white coating material, an intelligent thermochromic coating material and a coating layer |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008059856A1 (en) * | 2006-11-15 | 2008-05-22 | Hitachi Chemical Co., Ltd. | Heat curable resin composition for light reflection, process for producing the resin composition, and optical semiconductor element mounting substrate and optical semiconductor device using the resin composition |
Family Cites Families (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4317317A1 (de) | 1993-05-25 | 1994-12-01 | Hoechst Ag | Härtbare pulverförmige Mischungen, Verfahren zu ihrer Herstellung und ihre Verwendung |
DE19520855A1 (de) | 1995-05-02 | 1996-11-07 | Hoechst Ag | Aliphatische Epoxid-Amin-Addukte mit hoher Seitenkettenverzweigung, Verfahren zu ihrer Herstellung sowie ihre Verwendung |
JP3672988B2 (ja) * | 1995-12-06 | 2005-07-20 | 松下電器産業株式会社 | 接着剤の製造方法 |
JPH10202789A (ja) | 1997-01-22 | 1998-08-04 | Shin Kobe Electric Mach Co Ltd | 積層板 |
JP4999241B2 (ja) | 2001-08-10 | 2012-08-15 | 利昌工業株式会社 | プリント配線基板用白色積層板 |
DE10349394A1 (de) | 2003-10-21 | 2005-05-25 | Marabuwerke Gmbh & Co. Kg | UV-härtendes Bindemittel für Farben oder Lacke zur Bedruckung von Glas und Verfahren zur Bedruckung von Glassubstraten |
JP2006060321A (ja) | 2004-08-17 | 2006-03-02 | Matsushita Electric Works Ltd | 無線中継装置 |
JP4608294B2 (ja) | 2004-11-30 | 2011-01-12 | 日亜化学工業株式会社 | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
WO2006059564A1 (ja) * | 2004-11-30 | 2006-06-08 | Daicel Chemical Industries, Ltd. | 脂環式エポキシ(メタ)アクリレート及びその製造方法、並びに共重合体 |
JP4634856B2 (ja) | 2005-05-12 | 2011-02-16 | 利昌工業株式会社 | 白色プリプレグ、白色積層板、及び金属箔張り白色積層板 |
JP4905052B2 (ja) * | 2005-10-21 | 2012-03-28 | 三菱瓦斯化学株式会社 | プリプレグおよび銅張積層板 |
JP4887746B2 (ja) * | 2005-11-11 | 2012-02-29 | 三菱化学株式会社 | 水素化エポキシ樹脂、その製造方法、エポキシ樹脂組成物及び発光素子封止材用エポキシ樹脂組成物 |
JP5232369B2 (ja) | 2006-02-03 | 2013-07-10 | 日立化成株式会社 | 光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法 |
JP4711208B2 (ja) * | 2006-03-17 | 2011-06-29 | 山栄化学株式会社 | 感光性熱硬化性樹脂組成物、並びにレジスト膜被覆平滑化プリント配線基板及びその製造法。 |
MY152165A (en) * | 2006-06-02 | 2014-08-15 | Hitachi Chemical Co Ltd | Optical semiconductor element mounting package, and optical semiconductor device using the same |
US20070295983A1 (en) * | 2006-06-27 | 2007-12-27 | Gelcore Llc | Optoelectronic device |
US7989840B2 (en) * | 2006-08-29 | 2011-08-02 | Toshiba Lighting & Technology Corporation | Illumination apparatus having a plurality of semiconductor light-emitting devices |
JP4678391B2 (ja) * | 2006-08-29 | 2011-04-27 | 東芝ライテック株式会社 | 照明装置 |
CA2668596A1 (en) | 2006-11-14 | 2008-05-22 | Santen Pharmaceutical Co., Ltd. | Novel 1,2-dihydroquinoline derivative having substituted phenylamino lower alkyl group and ester-introduced phenyl group as substituents |
KR20090124906A (ko) * | 2007-03-12 | 2009-12-03 | 니치아 카가쿠 고교 가부시키가이샤 | 고출력 발광 장치 및 그것에 이용하는 패키지 |
-
2009
- 2009-09-25 KR KR1020127028549A patent/KR101372616B1/ko not_active IP Right Cessation
- 2009-09-25 KR KR1020117008182A patent/KR101268725B1/ko not_active IP Right Cessation
- 2009-09-25 JP JP2010531830A patent/JP5429177B2/ja not_active Expired - Fee Related
- 2009-09-25 MY MYPI2013003688A patent/MY155463A/en unknown
- 2009-09-25 DE DE112009002625T patent/DE112009002625T5/de not_active Ceased
- 2009-09-25 MY MYPI2011001396A patent/MY152752A/en unknown
- 2009-09-25 US US12/998,240 patent/US8343616B2/en not_active Expired - Fee Related
- 2009-09-25 MY MYPI2013003687A patent/MY155462A/en unknown
- 2009-09-25 CN CN2009801384294A patent/CN102165011B/zh not_active Expired - Fee Related
- 2009-09-25 CN CN201210364195.9A patent/CN102863872B/zh not_active Expired - Fee Related
- 2009-09-25 WO PCT/JP2009/066633 patent/WO2010038673A1/ja active Application Filing
- 2009-09-29 TW TW098132937A patent/TWI505415B/zh not_active IP Right Cessation
-
2011
- 2011-07-29 US US13/137,232 patent/US8367153B2/en not_active Expired - Fee Related
- 2011-07-29 US US13/137,231 patent/US8421113B2/en not_active Expired - Fee Related
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2008059856A1 (en) * | 2006-11-15 | 2008-05-22 | Hitachi Chemical Co., Ltd. | Heat curable resin composition for light reflection, process for producing the resin composition, and optical semiconductor element mounting substrate and optical semiconductor device using the resin composition |
Also Published As
Publication number | Publication date |
---|---|
US20110294241A1 (en) | 2011-12-01 |
US20110284915A1 (en) | 2011-11-24 |
DE112009002625T5 (de) | 2012-01-19 |
TWI505415B (zh) | 2015-10-21 |
MY155462A (en) | 2015-10-15 |
KR20120135920A (ko) | 2012-12-17 |
US8367153B2 (en) | 2013-02-05 |
CN102863872B (zh) | 2015-08-19 |
US8421113B2 (en) | 2013-04-16 |
KR20110059638A (ko) | 2011-06-02 |
US8343616B2 (en) | 2013-01-01 |
KR101268725B1 (ko) | 2013-05-28 |
MY152752A (en) | 2014-11-28 |
WO2010038673A1 (ja) | 2010-04-08 |
MY155463A (en) | 2015-10-15 |
JP5429177B2 (ja) | 2014-02-26 |
TW201032299A (en) | 2010-09-01 |
CN102165011A (zh) | 2011-08-24 |
JPWO2010038673A1 (ja) | 2012-03-01 |
US20110278630A1 (en) | 2011-11-17 |
KR101372616B1 (ko) | 2014-03-11 |
CN102165011B (zh) | 2013-09-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN102165011B (zh) | 涂布剂、使用该涂布剂的光半导体元件搭载用基板及光半导体装置 | |
CN102934243B (zh) | 光反射性各向异性导电浆料和发光装置 | |
CN102540723B (zh) | 白色固化性树脂组合物 | |
EP1887031B1 (en) | White prepreg, white laminated plate, and metal foil clad white laminated plate | |
CN102576798B (zh) | 光反射性导电颗粒、各向异性导电粘合剂和发光装置 | |
CN102257039B (zh) | 羧酸化合物及含有该羧酸化合物的环氧树脂组合物 | |
CN101942073A (zh) | 光半导体密封用固化性树脂组合物及其固化物 | |
CN101982028A (zh) | 配线板的制造方法、光电复合部件的制造方法以及光电复合基板的制造方法 | |
CN104497486A (zh) | 一种耐黄变性无卤白色树脂组合物、层压板及其制备方法 | |
TWI400261B (zh) | An epoxy resin, an epoxy resin composition, a photosensitive resin composition and a hardened product thereof | |
CN109312045A (zh) | 醇改性聚酰胺酰亚胺树脂及其制造方法 | |
CN103635532B (zh) | 光半导体装置用白色固化性组合物、光半导体装置用成形体以及光半导体装置 | |
CN104736591A (zh) | 热固性树脂组合物、光反射性各向异性导电粘接剂及发光装置 | |
JP2010278411A (ja) | 白色コート剤、これを用いた光半導体素子搭載用基板及び光半導体装置 | |
JP6115457B2 (ja) | グリシジルイソシアヌリル変性ポリシロキサンの製造方法 | |
US6756166B2 (en) | Photosensitive resin composition and printed wiring board | |
CN104903379B (zh) | 环氧树脂、环氧树脂组合物及固化物 | |
CN105980440A (zh) | 环氧树脂、固化性树脂组合物及其固化物 | |
JP5802133B2 (ja) | 耐変色性に優れた熱硬化性白色インク組成物及びその硬化物 | |
JP5685097B2 (ja) | 硬化性樹脂組成物 | |
KR102258263B1 (ko) | 감광형 가용성 폴리이미드 수지 조성물 및 이를 응용한 보호 필름 | |
CN117425696A (zh) | 光反射用热固性树脂组合物、光半导体元件搭载用基板及光半导体装置 | |
JP2010100800A (ja) | 光学部材のプリント配線板用樹脂組成物及び銅張積層板 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C53 | Correction of patent of invention or patent application | ||
CB02 | Change of applicant information |
Address after: Tokyo, Japan, Japan Applicant after: Hitachi Chemical Co., Ltd. Address before: Tokyo, Japan, Japan Applicant before: Hitachi Chemical Co., Ltd. |
|
COR | Change of bibliographic data |
Free format text: CORRECT: APPLICANT; FROM: HITACHI CHEMICAL CO. LTD. TO: HITACHI CHEMICAL CO., LTD. Free format text: CORRECT: ADDRESS; FROM: |
|
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150819 Termination date: 20170925 |