CN102856252B - 柔性显示器的制造方法 - Google Patents

柔性显示器的制造方法 Download PDF

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CN102856252B
CN102856252B CN201110427810.1A CN201110427810A CN102856252B CN 102856252 B CN102856252 B CN 102856252B CN 201110427810 A CN201110427810 A CN 201110427810A CN 102856252 B CN102856252 B CN 102856252B
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宋泰俊
柳洵城
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Abstract

本发明提供了一种可以使制造处理简化并且降低制造费用的柔性显示器的制造方法。根据本发明的一个示例性实施方式的一种制造柔性显示器的方法可以包括以下步骤:在承载基板上形成牺牲层;在所述牺牲层上形成柔性基板;在所述柔性基板上形成TFT阵列;对所述牺牲层进行蚀刻,以使所述柔性基板与所述承载基板分离;将所述柔性基板附接到粘着辊;以及将已附接到所述粘着辊的所述柔性基板附接到背基板。

Description

柔性显示器的制造方法
技术领域
该文件涉及柔性显示器的制造方法,更具体地说,涉及承载基板能够被重复利用的柔性显示器的制造方法。
背景技术
本申请要求2011年6月28日提交的韩国专利申请No.10-2011-0062820的优先权,此处通过引入的方式将其并入。
现今,随着多媒体的发展,显示装置获得了更大的重要性。同时,各种平板显示器(如,LCD(液晶显示器)、PDP(等离子显示面板)、FED(场发射显示器)、OLED(有机发光二极管显示装置)、EPD(电泳显示器)等)正在投入实际使用。
目前,已经开发了这样一种柔性显示器,其由柔性材料(如塑料等)而不是普通的非柔性玻璃基板制成,使得即使当如纸一样弯曲时,也可以保持显示性能。但是,柔性显示器的基板很容易弯曲,以至于在制造过程中基板应当被支撑在如承载基板的硬基板上。
图1是示出了常规柔性显示器的制造方法的顺序步骤的流程图。
参照图1,为了制造常规柔性显示器,在承载基板上形成牺牲层,接着在牺牲层上形成柔性基板(S10)。在柔性基板上形成TFT阵列(S20),将显示装置附接到TFT阵列,接着将柔性基板划线成多个盒单元(cell unit)(S30)。然后,对由柔性基板和显示装置组成的盒单元柔性显示器进行密封(S40),接着将承载基板与柔性基板分离(S50)。由此,完成柔性显示器的制造。
但是,在常规柔性显示器中,由于在承载基板和柔性基板彼此附接的状态下,执行划线处理,所以承载基板一旦使用过,就应当丢弃。因此,由于承载基板是不可重复利用的,所以存在的问题在于成本增加。
发明内容
该文件的一个方面是提供一种可以简化制造过程并且降低制造费用的柔性显示器的制造方法。
根据本发明的一个示例性实施方式的柔性显示器的制造方法可以包括以下步骤:在承载基板上形成牺牲层;在所述牺牲层上形成柔性基板;在所述柔性基板上形成TFT阵列;对所述牺牲层进行蚀刻,以将所述承载基板与所述柔性基板分离;将所述柔性基板附接到粘着辊;以及将已经附接到所述粘着辊的所述柔性基板附接到背基板。
根据本发明的另一个示例性实施方式的柔性显示器的制造方法可以包括以下步骤:在承载基板上形成牺牲层;在所述牺牲层上形成缓冲层;在所述缓冲层上形成TFT阵列;对所述牺牲层进行蚀刻,以使所述承载基板与上面形成有所述TFT阵列的所述缓冲层分离;将上面形成有所述TFT阵列的所述缓冲层附接到粘着辊;以及将上面形成有所述TFT阵列并且已经附接到所述粘着辊的所述缓冲层附接到背基板。
附图说明
附图被包括进来以提供对本发明的进一步理解,其被并入且构成本说明书的一部分,附图示出了本发明的实施方式,并与说明书一起用于解释本发明的原理。
图1是示出了常规柔性显示器的制造方法的顺序步骤的流程图;
图2是示出了根据本发明的第一实施方式的柔性显示器的制造方法的顺序步骤的流程图;
图3a至图3f是示出了根据本发明的第一实施方式的柔性显示器的制造方法的顺序步骤的图;
图4是示出了TFT阵列和电泳膜的图;
图5是示出了根据本发明的第二实施方式的柔性显示器的制造方法的顺序步骤的流程图;以及
图6a至图6f是示出了根据本发明的第二实施方式的柔性显示器的制造方法的顺序步骤的图。
具体实施方式
现在将详细描述本发明的实施方式,其示例在附图中例示。
图2是示出了根据本发明的第一实施方式的柔性显示器的制造方法的顺序步骤的流程图。
参照图2,根据本发明的第一实施方式的柔性显示器的制造方法包括在承载基板上形成牺牲层的处理(S100),形成柔性基板的处理(S110),形成TFT阵列的处理(S120),分离柔性基板的处理(S130),将柔性基板附接到粘着辊的处理(S140),将柔性基板附接到背基板的处理(S150),划线和密封处理(S160),以及附接COG/FPC的处理(S170)。
更具体地,在承载基板上形成牺牲层的处理(S100)是在硬并且耐高温的承载基板(如,玻璃)上形成牺牲层的处理。形成柔性基板的处理(S110)是通过在牺牲层的整个表面上涂布聚酰亚胺来形成柔性基板的处理,而形成TFT阵列的处理(S120)是在柔性基板上形成TFT阵列的处理。形成显示装置的处理(S125)是在TFT阵列上形成显示装置的处理,该处理可以在形成TFT阵列的处理之后或在划线和密封处理之前执行。
并且,分离柔性基板的处理(S130)是将承载基板与柔性基板分离的处理,而将柔性基板附接到粘着辊的处理(S140)是将分离后的柔性基板绕着粘着辊卷绕,以附接到该粘着辊的处理。将柔性基板附接到背基板的处理(S150)是通过滚动粘着辊将已经附接到粘着辊的柔性基板附接到背基板的处理,而划线和密封处理(S160)是将柔性基板切割成盒单元并且密封该盒单元的处理。最后,附接COG/FPC的处理(S170)的处理是附接COG/FPC以由此完成柔性显示器的制造的处理。
图3a至图3f是示出了根据本发明的第一实施方式的柔性显示器的制造方法的顺序步骤的图,而图4是示出了TFT阵列和电泳膜的图。
参照图3a,在由玻璃制成的承载基板210上形成无机绝缘膜215。由氮化硅制成的无机绝缘膜215起到提高与后续步骤中形成的牺牲层的粘着性。并且,在无机绝缘膜215上沉积非晶硅,以形成牺牲层220。
然后,在牺牲层220的整个表面上旋转涂布作为聚合物材料的聚酰亚胺。接着,对所涂布的聚酰亚胺进行硬化,以形成柔性基板230。其后,在柔性基板230上形成缓冲层235。缓冲层235起到提高与由聚合物材料制成的柔性基板230的接合性的作用,并且还起到防止当聚合物材料暴露于高温时可能出现的有机气体或有机微粒的排放。
然后,参照图3b,在缓冲层235上形成TFT阵列300。将参照示出了TFT阵列300的图4更详细地进行描述。在缓冲层235上层叠金属,以形成栅极315,并且在栅极315上层叠硅的氧化物或硅的氮化物,以形成栅绝缘膜320,用于隔离栅极315。
接着,在栅绝缘膜320上提供非晶硅或含有已结晶非晶硅的多晶硅,并且对其进行构图,以由此形成与栅极315相对应的半导体层325。并且,欧姆接触层330形成在半导体层325的任意一侧上,并且低电阻金属堆叠在欧姆接触层330上并且对该低电阻金属层进行构图,以由此形成连接至欧姆接触层330的源极335a和漏极335b。由此,完成TFT的制造。
此后,设置保护TFT的平坦化膜340,并且设置第一电极345,该第一电极345经由平坦化膜340的接触孔连接至漏极335b,由此获得TFT阵列300。
接着,参照图3c的(a),将承载基板210与上面形成有TFT阵列300的柔性基板230分离。这里,当激光照射到承载基板210和柔性基板230之间的牺牲层220时,牺牲层220生成氢气,这使柔性基板230与承载基板210分离。
当将承载基板210与柔性基板230分离时,使粘着辊400与柔性基板230接触,并且在其上滚动。结果,如图3c中(b)所示,柔性基板230绕着粘着辊400卷绕,以附接到粘着辊400。这里,粘着辊400具有涂布在上面的粘合剂410,如聚二甲基硅氧烷,使得柔性基板230可以附接到粘着辊400。
接着,参照图3c的(c)和(d),涂布有粘合剂的背基板430放置在粘着辊400下方,并且使粘着辊400与背基板430接触,并且在其上滚动,使得柔性基板230附接到背基板430。因此,柔性基板230与承载基板210分离,并且附接到背基板430,而承载基板210将在制造柔性基板的处理中被再次使用。
接着,参照图3d,在TFT阵列300上形成显示装置350。本发明的示例性显示装置350可以包括OLED(有机发光二极管显示装置)、LCD(液晶显示器)、EPD(电泳显示器)、PDP(等离子体显示面板)等。将EPD作为该示例性实施方式中的示例。
更具体地,参照图4,在TFT阵列300上形成钝化膜345,并且作为电泳显示装置的电泳膜350附接到钝化膜345。电泳膜350由含有带电染料颗粒的囊361,以及位于囊361上/下的上保护层363和下保护层362组成。囊361包含与正电压反应的黑染料颗粒361a、与负电压反应的白染料颗粒361b以及溶剂361c。上保护层363和下保护层362起到在保护球形的囊361的同时防止囊361移动。这些上保护层363和下保护层362由塑料或具有弹性的导电材料制成。并且,上面形成有第二电极370的保护膜380设置在电泳膜350上。
其后,参照图3e,利用刀或激光刀将附接有电泳膜350的柔性显示器460划成多个盒单元。并且,为了进行密封,将密封剂450涂布在各盒单元的柔性显示器460的周边。然后,参照图3f,COG/FPC470附接到柔性显示器460。由此,完成根据本发明的第一实施方式的柔性显示器460的制造。
如上所述,根据本发明的第一实施方式的柔性显示器的制造方法具有的优点在于:由于承载基板在划线处理之前与柔性基板分离,所以可以重复利用承载基板,因此可以降低制造费用。此外,该方法具有的优点在于由于利用粘着辊以简单方式将柔性基板附接到背基板,所以可以使制造处理简化,这导致生产率高。
同时,与根据本发明的上述第一实施方式不同,在没有形成柔性基板的处理的情况下,可以制造柔性显示器。
图5是示出了根据本发明的第二实施方式的柔性显示器的制造方法的顺序步骤的流程图。
根据本发明的第二实施方式的柔性显示器的制造方法包括:在承载基板上形成牺牲层的处理(S500);形成缓冲层的处理(S510);形成TFT阵列的处理(S520);分离缓冲层的处理(S530);将TFT阵列附接至粘着辊的处理(S540);将TFT阵列附接至背基板的处理(S550);划线和密封处理(S560)以及附接COG/FPC的处理(S570)。
更具体地,在承载基板上形成牺牲层的处理(S500)是在硬并且耐高温的承载基板(如,玻璃)上形成牺牲层的处理。形成缓冲层的处理(S510)是利用硅的氧化物或硅的氮化物在牺牲层上形成缓冲层的处理,而形成TFT阵列的处理(S520)是在缓冲层上形成TFT阵列的处理。形成显示装置的处理(S525)是在TFT阵列上形成显示装置的处理,该处理可以在形成TFT阵列的处理之后或者划线和密封处理之前执行。
并且,分离缓冲层的处理(S530)是将承载基板与缓冲层分离的处理,而将TFT阵列附接到粘着辊的处理(S540)是将上面形成有TFT阵列的缓冲层绕着粘着辊卷绕,以附接到粘着辊。将TFT阵列附接到背基板的处理(S550)是通过滚动粘着辊将缓冲层附接到背基板的处理,而划线和密封处理(S560)是将柔性基板切成多个盒单元并且对该盒单元进行密封的处理。最后,附接COG/FPC的处理(S570)是附接COG/FPC的处理,以由此完成柔性显示器的制造。
图6a至图6f是示出了根据本发明的第二实施方式的柔性显示器的制造方法的顺序步骤的图。将简单描述与上述第一实施方式的处理相同的处理。
参照图6a,在由玻璃制成的承载基板610上形成无机绝缘膜615,并且在无机绝缘膜615上沉积非晶硅,以形成牺牲层620。此后,在牺牲层620上形成缓冲层635。缓冲层635起到当与承载基板610分离时支撑形成在上面的TFT阵列的作用。
接着,参照图6b,在缓冲层635上形成TFT阵列700。TFT阵列700与第一实施方式中描述的相同,因此省略其描述。
然后,参照图6c中(a),将上面形成有TFT阵列700的缓冲层635与承载基板610分离。这里,当激光照射到承载基板610和缓冲层635之间的牺牲层620时,牺牲层620生成氢气,这将缓冲层635与承载基板610分离。当承载基板610与缓冲层635分离时,使粘着辊800与上面形成有TFT阵列700的缓冲层635接触,并且在缓冲层635上滚动。结果,如图6c的(b)所示,缓冲层635绕着粘着辊800卷绕,以附接到粘着辊800。
接着,参照图6c的(c)和(d),涂布有粘合剂的背基板830放置在粘着辊800下方,并且使粘着辊800与背基板830接触,并且在背基板830上滚动,使得缓冲层635附接到背基板830。因此,缓冲层635与承载基板610分离,并且附接到背基板630,而承载基板610将在制造柔性基板的处理中被再次使用。
然后,参照图6d,在TFT阵列700上形成显示装置750。如在第一实施方式中,将作为电泳显示装置的电泳膜作为本发明的显示装置750的示例。其后,参照图6e,利用刀或激光刀将附接有电泳膜750的柔性显示器860划为多个盒单元。并且,为了密封,在各盒单元的柔性显示器860的周边涂布密封剂850。接着,参照图6f,COG/FPC870附接到柔性显示器860。由此,完成根据本发明的第二实施方式的柔性显示器860的制造。
如上所述,根据本发明的第二实施方式的柔性显示器的制造方法具有的优点在于:由于承载基板在划线处理之前与上面形成有TFT阵列的缓冲层分离,所以可以重复利用承载基板,因此可以降低制造费用。此外,该方法具有的优点在于由于利用粘着辊以简单方式将上面形成有TFT阵列的缓冲层附接到背基板,所以可以使制造处理简化,这导致生产率高。而且,本方法具有的优点在于通过省略制造由聚酰亚胺制成的柔性基板,可以降低制造费用。
前述实施方式和优点仅仅是示例性的,并不是要解释为限制本发明。本教导可以容易地应用于其他类型的装置。对前述实施方式的描述的目的是说明性的,而不是限制权利要求的范围。许多替代、修改和变型对于本领域的技术人员将是明显的。在权利要求书中,装置加功能语句旨在覆盖这里描述的执行所记载的功能的结构,不仅包括结构等同物,也包括等同的结构。而且,除非在权利要求的限定中明确记载了术语“单元(means)”,否则不应以35USC 112(6)来解释此限定。

Claims (5)

1.一种制造柔性显示器的方法,该方法包括以下步骤:
在承载基板上形成牺牲层;
在所述牺牲层上形成柔性基板;
在所述柔性基板上形成缓冲层;
在所述缓冲层上形成TFT阵列;
对所述牺牲层进行蚀刻,使所述柔性基板与所述承载基板分离;
通过使所述柔性基板绕着上面涂布有粘合剂的粘着辊卷绕,将该柔性基板附接到所述粘着辊;
通过将涂布有粘合剂的背基板放置在所述粘着辊下方,使所述粘着辊与所述背基板接触且在该背基板上滚动所述粘着辊,将已附接到所述粘着辊的所述柔性基板附接到所述背基板,
在所述柔性基板上形成显示装置;以及
对所附接的柔性基板进行划线和密封,该密封步骤包括利用密封剂对划线后的TFT阵列的边缘以及所述显示装置进行密封。
2.根据权利要求1所述的方法,其中,
在使所述柔性基板与所述承载基板分离之前,或者在将所述柔性基板附接到所述背基板之后,在所述柔性基板上形成所述显示装置。
3.根据权利要求2所述的方法,其中,
在形成所述显示装置之后,对所附接的柔性基板进行划线并密封。
4.根据权利要求2所述的方法,其中,所述显示装置是从由以下各项构成的组中选择的任意一种:有机发光二极管显示装置OLED、液晶显示器LCD、电泳显示器EPD和等离子体显示面板PDP。
5.根据权利要求1所述的方法,其中,通过激光照射对所述牺牲层进行蚀刻。
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Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10112257B1 (en) 2010-07-09 2018-10-30 General Lasertronics Corporation Coating ablating apparatus with coating removal detection
WO2012043971A2 (ko) * 2010-09-29 2012-04-05 포항공과대학교 산학협력단 롤 형상의 모기판을 이용한 플렉서블 전자소자의 제조방법, 플렉서블 전자소자 및 플렉서블 기판
US9895771B2 (en) 2012-02-28 2018-02-20 General Lasertronics Corporation Laser ablation for the environmentally beneficial removal of surface coatings
CN102769109B (zh) * 2012-07-05 2015-05-13 青岛海信电器股份有限公司 柔性显示器的制作方法以及制作柔性显示器的基板
KR101960745B1 (ko) * 2012-11-14 2019-03-21 엘지디스플레이 주식회사 연성 표시소자 절단방법 및 이를 이용한 연성 표시소자 제조방법
CN103531723B (zh) * 2013-03-22 2016-04-27 Tcl集团股份有限公司 柔性显示器的制备方法及用于制作柔性显示器的基板
KR102108360B1 (ko) * 2013-06-19 2020-05-11 삼성디스플레이 주식회사 기판 처리방법 및 이를 이용해 제조된 플렉서블 디스플레이 장치
KR102090276B1 (ko) * 2013-08-08 2020-03-18 삼성디스플레이 주식회사 유기 발광 표시 장치 및 광학 필름
CN103456689B (zh) * 2013-08-13 2015-02-25 京东方科技集团股份有限公司 用于将柔性基板与玻璃基板分离的装置及生产设备
KR102068093B1 (ko) * 2013-11-04 2020-01-20 엘지디스플레이 주식회사 플렉서블 표시장치 제조 방법
CN106597697A (zh) 2013-12-02 2017-04-26 株式会社半导体能源研究所 显示装置及其制造方法
CN103681486B (zh) * 2013-12-06 2018-07-17 京东方科技集团股份有限公司 一种柔性显示基板的制造方法
KR102255196B1 (ko) 2014-02-03 2021-05-25 삼성디스플레이 주식회사 플렉서블 디스플레이 장치 및 그 제조 방법
CN103779390B (zh) * 2014-02-11 2016-08-17 京东方科技集团股份有限公司 一种柔性显示基板及其制备方法
CN103985665B (zh) * 2014-05-15 2016-08-17 深圳市华星光电技术有限公司 一种柔性显示器的制作方法
TWI561325B (en) * 2014-08-01 2016-12-11 Au Optronics Corp Display module manufacturing method and display module
CN105336682A (zh) * 2014-08-06 2016-02-17 上海和辉光电有限公司 一种柔性基板的制作方法、固定方法以及固定结构
CN104332416A (zh) * 2014-08-21 2015-02-04 京东方科技集团股份有限公司 一种柔性显示器的制备方法和柔性显示器
KR102301501B1 (ko) * 2015-01-21 2021-09-13 삼성디스플레이 주식회사 가요성 표시 장치의 제조 방법
CN104916550A (zh) * 2015-06-09 2015-09-16 深圳市华星光电技术有限公司 用于制造柔性基板的方法以及基板结构
CN106373917A (zh) * 2015-07-20 2017-02-01 Tcl集团股份有限公司 柔性显示屏的制造方法和柔性显示屏的制造设备
CN107706305B (zh) * 2016-08-07 2020-11-03 鸿富锦精密工业(深圳)有限公司 柔性显示装置及其制备方法
CN106711174B (zh) * 2016-12-07 2020-01-17 上海天马微电子有限公司 显示母板、柔性显示面板、柔性显示装置以及制作方法
US10384434B2 (en) 2017-08-31 2019-08-20 Industrial Technology Research Institute Separating device and separating method
KR102470375B1 (ko) 2017-10-31 2022-11-23 엘지디스플레이 주식회사 디스플레이 장치
CN108281388B (zh) * 2018-01-23 2021-02-26 京东方科技集团股份有限公司 阵列基板、其制作方法及显示面板
CN108767127A (zh) * 2018-05-28 2018-11-06 武汉华星光电半导体显示技术有限公司 一种显示面板的制作方法、显示面板及显示装置
CN112201169B (zh) * 2020-11-02 2021-07-27 山西穿越光电科技有限责任公司 一种柔性显示装置
CN112397559B (zh) * 2020-11-09 2024-02-02 武汉华星光电半导体显示技术有限公司 可拉伸显示模组及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1409374A (zh) * 2001-08-22 2003-04-09 株式会社半导体能源研究所 剥离方法以及制造半导体器件的方法
CN1934707A (zh) * 2004-03-22 2007-03-21 株式会社半导体能源研究所 制造集成电路的方法
US20090029527A1 (en) * 2002-04-24 2009-01-29 E Ink Corporation Processes for forming backplanes for electro-optic displays
US7713836B2 (en) * 2006-09-29 2010-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6814832B2 (en) * 2001-07-24 2004-11-09 Seiko Epson Corporation Method for transferring element, method for producing element, integrated circuit, circuit board, electro-optical device, IC card, and electronic appliance
JP2004349540A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 薄膜装置の製造方法、電気光学装置、及び電子機器
US8040469B2 (en) * 2004-09-10 2011-10-18 Semiconductor Energy Laboratory Co., Ltd. Display device, method for manufacturing the same and apparatus for manufacturing the same
TWI296444B (en) * 2006-04-28 2008-05-01 Innolux Display Corp Thin film transistor substrate and method of manufacturing same
JP5299736B2 (ja) * 2007-09-04 2013-09-25 Nltテクノロジー株式会社 フィルム貼付装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1409374A (zh) * 2001-08-22 2003-04-09 株式会社半导体能源研究所 剥离方法以及制造半导体器件的方法
US20090029527A1 (en) * 2002-04-24 2009-01-29 E Ink Corporation Processes for forming backplanes for electro-optic displays
CN1934707A (zh) * 2004-03-22 2007-03-21 株式会社半导体能源研究所 制造集成电路的方法
US7713836B2 (en) * 2006-09-29 2010-05-11 Semiconductor Energy Laboratory Co., Ltd. Method for forming conductive layer and substrate having the same, and method for manufacturing semiconductor device

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