TW201301223A - 可撓性顯示裝置之製造方法 - Google Patents

可撓性顯示裝置之製造方法 Download PDF

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TW201301223A
TW201301223A TW100149281A TW100149281A TW201301223A TW 201301223 A TW201301223 A TW 201301223A TW 100149281 A TW100149281 A TW 100149281A TW 100149281 A TW100149281 A TW 100149281A TW 201301223 A TW201301223 A TW 201301223A
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display device
substrate
flexible
manufacturing
tft
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TWI457886B (zh
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Tae-Joon Song
Soon-Sung Yoo
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Lg Display Co Ltd
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01—ELECTRIC ELEMENTS
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
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    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
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Abstract

本發明關於一種可撓性顯示裝置之製造方法，能夠簡化製造過程以及減少製造成本。本發明之一實施例之可撓性顯示裝置之製造方法可包含：形成一犧牲層於一載體基板上；形成一可撓性基板於犧牲層上；形成一薄膜電晶體(TFT)陣列於可撓性基板上；蝕刻犧牲層，用以將可撓性基板自載體基板上分離；將可撓性基板附加至一黏附輥；以及將已經附加至黏附輥的可撓性基板附加至一後基板。

Description

可撓性顯示裝置之製造方法
本發明係關於一種可撓性顯示裝置之製造方法，並且特別地，本發明關於一種可撓性顯示裝置之製造方法，其中的載體基板能夠重複利用。
如今，隨著多媒體應用之發展，顯示裝置獲得更多的重視。同時，不同的平面顯示裝置，例如一液晶顯示裝置(Liquid Crystal Display LCD)、一電漿顯示面板(Plasma Display Panel,PDP)、一場發射顯示裝置(Field Emission Display,FED)、一有機發光二極體顯示裝置(Organic Light Emitting Diode Display Device,OLED)、一電泳顯示裝置(EPD)等，正在投入實際使用中。
最近，已經開發一可撓性顯示裝置，可撓性顯示裝置由可撓性材料，例如塑料等，而非由一通常的非可撓性玻璃基板製造，以使得甚至當像紙一樣彎曲時能夠維持一顯示性能。然而，可撓性顯示裝置之基板如此容易的被彎曲，以使得此基板應該在製造期間支撐於一硬基板，例如一載體基板上。
「第1圖」係為一習知技術之可撓性顯示裝置之製造方法的順序步驟之流程圖。
請參閱「第1圖」，為了製造傳統的可撓性顯示裝置，一犧牲層形成於一載體基板上，以及然後一可撓性基板形成於犧牲層上(S10)。一薄膜電晶體(TFT)陣列形成於可撓性基板上(S20)，一顯示裝置附加於此，以及然後此可撓性基板劃線成格子單元(S30)。然後，密封由可撓性基板與顯示裝置組成的格子單元可撓性顯示裝置，以及然後可撓性基板自載體基板分離(S50)，由此，完成可撓性顯示之製造。
然而，在傳統的可撓性顯示裝置中，由於劃線過程在載體基板與可撓性基板彼此附裝的狀態下執行，因此一旦使用載體基板，載體基板將浪費掉。由此，由於載體基板不可重複使用存在成本增加的問題。
因此，鑒於上述問題，本發明之目的在於提供一種可撓性顯示裝置之製造方法，能夠簡化製造過程以及減少製造成本。
本發明之一實施例之可撓性顯示裝置之製造方法可包含：形成一犧牲層於一載體基板上；形成一可撓性基板於犧牲層上；形成一薄膜電晶體(TFT)陣列於可撓性基板上；蝕刻犧牲層，用以將可撓性基板自載體基板上分離；將可撓性基板附加至一黏附輥；以及將已經附加至黏附輥的可撓性基板附加至一後基板。
本發明之另一實施例之可撓性顯示裝置之製造方法可包含：形成一犧牲層於一載體基板上；形成一緩衝層於犧牲層上；形成一薄膜電晶體(TFT)陣列於緩衝層上；蝕刻犧牲層，用以將其上形成有薄膜電晶體(TFT)陣列的此緩衝層自載體基板上分離；將其上形成有薄膜電晶體(TFT)陣列的此緩衝層附加至一黏附輥；以及將其上形成有薄膜電晶體(TFT)陣列且已經附加至黏附輥的此緩衝層附加至一後基板。
以下，將結合圖式部份描述本發明之詳細實施例。
「第2圖」係為本發明第一實施例之一可撓性顯示裝置之製造方法的順次步驟之流程圖。
請參閱「第2圖」，根據本發明第一實施例之可撓性顯示裝置之製造方法包含：在一載體基板上形成一犧牲層之過程(S100)，形成一可撓性基板之過程(S110)，形成一薄膜電晶體(TFT)陣列之過程(S120)，分離此可撓性基板之過程(S130)，將此可撓性基板附加至一黏附輥之過程(S140)，將可撓性基板附加至一後基板之過程(S150)，一劃線及密封過程(S160)，以及附裝一COG/FPC之過程(S170)。
更詳細而言，在載體基板上形成犧牲層的過程(S100)係為在硬且耐高溫的載體基板，例如玻璃基板上形成犧牲層的一過程。形成可撓性基板之過程(S110)係為透過在犧牲層之全部表面上塗覆聚醯亞胺形成可撓性基板之過程，以及形成薄膜電晶體(TFT)陣列之過程(S120)係為在此可撓性基板上形成薄膜電晶體(TFT)陣列的一過程。形成一顯示裝置之過程(S125)係為在薄膜電晶體(TFT)陣列上形成顯示裝置之過程，該過程可在形成薄膜電晶體(TFT)陣列之過程之後或者在劃線及密封過程之前執行。
並且，分離可撓性基板之過程(S130)係為將可撓性基板自載體基板上分離的一過程，以及將此可撓性基板附加至一黏附輥之過程(S140)係為將分離的可撓性基板圍繞待附加的該黏附輥纏繞之過程。將可撓性基板附加至一後基板之過程(S150)係為將已經附加至該黏附輥的可撓性基板透過滾動該黏附輥，附加至後基板的一過程，以及劃線及密封過程(S160)係為將可撓性基板切割為格子單元且密封的過程。最後，附裝COG/FPC之過程(S170)係為附裝COG/FPC之過程，用以由此完成該可撓性顯示裝置之製造。
「第3a圖」至「第3f圖」係為本發明第一實施例之可撓性顯示裝置之製造方法之順次步驟之示意圖，以及「第4圖」係為一薄膜電晶體(TFT)陣列及一電泳薄膜之示意圖。
請參閱「第3a圖」，一無機絕緣膜215形成於由玻璃製造的一載體基板210上。由氮化矽製造的無機絕緣膜215用以提高對隨後步驟中形成的一犧牲層的黏附性能。以及，非晶矽沉積於無機絕緣膜215上用以形成一犧牲層220。
然後，為一聚合材料的聚醯亞胺旋塗於犧牲層220的全部表面上。然後，塗覆的聚醯亞胺硬化用以形成一可撓性基板230。其後，一緩衝層235形成於可撓性基板230上。緩衝層235用以提高對由聚合材料製造的可撓性基板230的結合性能，並且還用以防止當該聚合材料暴露於高溫時，可出現的有機氣體或有機細微顆粒之釋放。
然後，請參閱「第3b圖」，一薄膜電晶體(TFT)陣列形成於緩衝層235上。將結合表示薄膜電晶體(TFT)陣列300的「第4圖」更詳細說明。金屬沉積於緩衝層235上用以形成一閘極315，以及氧化矽或氮化矽堆疊於閘極315上，用以形成用於絕緣閘極315的一閘極絕緣膜320。
然後，在閘極絕緣膜320上提供非晶矽或容納結晶非晶矽的多晶矽且形成圖案，用以由此形成與閘極315相對應的一半導體層325。並且，一歐姆接觸層330形成於半導體層325之兩側面，以及低電阻之金屬堆疊於其上且形成圖案，用以由此形成與歐姆接觸層330相連接之一源極335a以及一汲極335b。因此，完成該薄膜電晶體(TFT)之製造。
其後，提供一保護薄膜電晶體(TFT)的平面化膜340，並且提供一第一電極345，第一電極345藉由平面化膜340之一接觸孔與汲極335b相連接，因此獲得薄膜電晶體(TFT)陣列300。
然後，請參閱「第3c圖」，其上形成具有薄膜電晶體(TFT)陣列300的可撓性基板230自載體基板210分離。這裡，當一雷射照射至載體基板210與可撓性基板230之間的犧牲層220時，犧牲層220產生一氫氣，氫氣使得可撓性基板230自載體基板210上分離。
當可撓性基板230自載體基板210上分離時，一黏附輥400與可撓性基板230相接觸且在其上滾動。結果，如「第3c圖」(b)所示，可撓性基板230包圍圍繞黏附輥400用以附加。這裡，黏附輥400之上塗覆具有一黏合劑410，例如聚二甲基矽氧烷，以使得可撓性基板230能夠附加於黏附輥400。
然後，請參閱「第3c圖」(c)及(d)，一塗覆有一黏合劑的後基板430放置於黏附輥400之下，以及黏附輥400與後基板430相接觸且在其上滾動，以使得可撓性基板230附加至後基板430。因此，可撓性基板230自載體基板210上分離且附加至後基板430，同時載體基板210在可撓性基板之製造過程中再次使用。
然後，請參閱「第3d圖」，一顯示裝置(電泳膜350)形成於薄膜電晶體(TFT)陣列300上。本發明之示例顯示裝置(電泳膜350)可包含一有機發光二極體顯示裝置(OLED)、一液晶顯示裝置(LCD)、一場發射顯示裝置(FED)、一電漿顯示面板(PDP)等。在本發明之本實施例中以電泳顯示裝置(EPD)作為一實例。
更詳細而言，請參閱「第4圖」，一鈍化膜345形成於薄膜電晶體(TFT)陣列300上，以及一係為電泳顯示裝置的電泳膜350附加至鈍化膜345。電泳膜350係由囊體361(包含帶電色料粒子)，以及位於囊體361之上/下的頂及底保護層363及362組成。囊體361包含一對正電壓起反應的黑色料粒子361a，一對負電壓起反應的白色料粒子361b，以及一溶劑361c。頂及底保護層363及362在對囊體361進行保護的同時，用以防止其運動。這些頂及底保護層363及362係由塑料或具有可撓性的一導電材料製造。並且，一保護膜380提供於電泳膜350之上，其中保護膜380之上形成具有一第二電極370。
其後，請參閱「第3e圖」，一可撓性顯示裝置460(附加有電泳膜350)使用一切割機或一雷射切割機，分割為複數個格子單元。以及，為了密封，一密封劑450塗覆於每一格子單元的可撓性顯示裝置460之周邊。然後，請參閱「第3f圖」，一COG/FPC 470附加至可撓性顯示裝置460。因此，完成本發明之第一實施例之可撓性顯示裝置460之製造。
如上所述，本發明第一實施例之可撓性顯示裝置之製造方法中，由於載體基板在劃線過程之前自可撓性基板上分離，載體基板可以循環使用，因此具有能夠減少製造成本之優點。此外，該方法由於可撓性基板使用黏附輥按照一簡單的方式附加於後基板，因此製造過程簡化，可具有高生產率之優點。
同時，與上述本發明之第一實施例不相同，該可撓性顯示裝置能夠不使用形成可撓性基板之過程製造。
「第5圖」係為本發明第二實施例之一可撓性顯示裝置之製造方法的順次步驟之流程圖。
根據本發明第二實施例之可撓性顯示裝置之製造方法包含：在一載體基板上形成一犧牲層之過程(S500)，形成一緩衝層之過程(S510)，形成一薄膜電晶體(TFT)陣列之過程(S520)，分離此緩衝層之過程(S530)，將此薄膜電晶體(TFT)陣列附加至一黏附輥之過程(S540)，將薄膜電晶體(TFT)陣列附加至一後基板之過程(S550)，一劃線及密封過程(S560)，以及附裝一COG/FPC之過程(S570)。
更詳細而言，在載體基板上形成犧牲層的過程(S500)係為在硬且耐高溫的載體基板，例如玻璃基板上形成犧牲層的一過程。形成緩衝層之過程(S510)係為透過使用氧化矽或氮化矽在犧牲層上形成緩衝層之過程，以及形成薄膜電晶體(TFT)陣列之過程(S520)係為在此緩衝層上形成薄膜電晶體(TFT)陣列的一過程。形成一顯示裝置之過程(S525)係為在薄膜電晶體(TFT)陣列上形成顯示裝置之過程，該過程可在形成薄膜電晶體(TFT)陣列之過程之後或者在劃線及密封過程之前執行。
並且，分離緩衝層之過程(S530)係為將緩衝層自載體基板上分離的一過程，以及將薄膜電晶體(TFT)陣列附加至黏附輥之過程(S540)係為將其上形成具有薄膜電晶體(TFT)陣列的緩衝層圍繞待附加的該黏附輥纏繞之過程。將薄膜電晶體(TFT)陣列附加至後基板之過程(S550)係為透過滾動該黏附輥，將緩衝層附加至後基板的一過程，以及劃線及密封過程(S560)係為將可撓性基板切割為格子單元且密封的過程。最後，附裝COG/FPC之過程(S570)係為附裝COG/FPC之過程，用以由此完成該可撓性顯示裝置之製造。
「第6a圖」至「第6f圖」係為本發明第二實施例之可撓性顯示裝置之製造方法的順次步驟之示意圖。與上述本發明之第一實施例子相同之過程將簡單描述。
請參閱「第6a圖」，一無機絕緣膜615形成於由玻璃製造的一載體基板610上，以及非晶矽沉積於無機絕緣膜615上用以形成一犧牲層620。其後，一緩衝層635形成於犧牲層620上。當緩衝層635自載體基板610上分離時，緩衝層635用以支撐其上形成的薄膜電晶體(TFT)陣列。
然後，請參閱「第6b圖」，一薄膜電晶體(TFT)陣列700形成於緩衝層635上。薄膜電晶體(TFT)陣列700與上述第一實施例中之相同，以及因此省去對其的說明。
然後，請參閱「第6c圖」(a)，其上形成具有薄膜電晶體(TFT)陣列700的緩衝層635自載體基板610分離。這裡，當一雷射照射至載體基板610與緩衝層635之間的犧牲層620時，犧牲層620產生一氫氣，氫氣使得緩衝層635自載體基板610上分離。當緩衝層635自載體基板610上分離時，一黏附輥800與緩衝層635(其上形成具有薄膜電晶體(TFT)陣列700)相接觸且在緩衝層635上滾動。結果，如「第6c圖」(b)所示，緩衝層635包圍圍繞黏附輥800用以附加。
然後，請參閱「第6c圖」(c)及(d)，一塗覆有黏合劑的後基板830放置於黏附輥800之下，以及黏附輥800與後基板830相接觸且在其上滾動，以使得緩衝層635附加至後基板830。因此，緩衝層635自載體基板610上分離且附加至後基板630，同時載體基板610在可撓性基板之製造過程中再次使用。
然後，請參閱「第6d圖」，一顯示裝置750形成於薄膜電晶體(TFT)陣列700上。如同在第一實施例中，係為一電泳顯示裝置的一電泳膜作為本發明顯示裝置750之一實例。其後，請參閱「第6e圖」，一可撓性顯示裝置860(附加有電泳膜(顯示裝置750))使用一切割機或一雷射切割機，分割為複數個格子單元。以及，為了密封，一密封劑850塗覆於每一格子單元的可撓性顯示裝置860之周邊上。然後，請參閱「第6f圖」，一COG/FPC 870附加至可撓性顯示裝置860。因此，完成本發明之第二實施例之可撓性顯示裝置860之製造。
如上所述，本發明第二實施例之可撓性顯示裝置之製造方法中，由於載體基板在劃線過程之前自其上形成有薄膜電晶體(TFT)陣列的緩衝層上分離，載體基板可以循環使用，因此具有能夠減少製造成本之優點。此外，該方法由於其上形成有薄膜電晶體(TFT)陣列的緩衝層使用黏附輥按照一簡單的方式附加於後基板，因此製造過程簡化，可具有高生產率之優點。而且，該方法透過省去由聚醯亞胺形成可撓性基板之製造，具有能夠減少製造成本之優點。
上述之實施例及優點僅為示例性的且並不看作對本發明之限制。本發明之思想能夠應用至其他類型之設備。本發明之描述傾向於示例性描述，並且不對本發明之專利保護範圍進行限制。本領域之技術人員顯然可意識到許多的替換、變化、以及修改。在申請專利範圍中，手段加功能之句型係用以涵蓋執行所述功能時本文中所描述之結構，其不僅涵蓋結構均等物且同時亦涵蓋均等結構。而且，除非〞手段〞一詞明確在申請專利範圍之限制中敘述，這樣的限制不用以在35 USC 112(6)之下解釋。
210．．．載體基板
215．．．無機絕緣膜
220．．．犧牲層
230．．．可撓性基板
235．．．緩衝層
300．．．薄膜電晶體(TFT)陣列
315．．．閘極
320．．．閘極絕緣膜
325．．．半導體層
330．．．歐姆接觸層
335a．．．源極
335b．．．汲極
340．．．平面化膜
345．．．鈍化膜
350．．．電泳膜
361．．．囊體
361a．．．黑色料粒子
361b．．．白色料粒子
361c．．．溶劑
362．．．底保護層
363．．．頂保護層
370．．．第二電極
380．．．保護膜
400．．．黏附輥
410．．．黏合劑
430．．．後基板
450．．．密封劑
460．．．可撓性顯示裝置
470．．．COG/FPC
610．．．載體基板
615．．．無機絕緣膜
620．．．犧牲層
635．．．緩衝層
700．．．薄膜電晶體(TFT)陣列
750．．．顯示裝置
800．．．黏附輥
810．．．輪轂
830．．．後基板
850．．．密封劑
860．．．可撓性顯示裝置
870．．．COG/FPC
TFT．．．薄膜電晶體
第1圖係為一習知技術之可撓性顯示裝置之製造方法的順序步驟之流程圖；
第2圖係為本發明第一實施例之一可撓性顯示裝置之製造方法的順次步驟之流程圖；
第3a圖至第3f圖係為本發明第一實施例之可撓性顯示裝置之製造方法之順次步驟之示意圖；
第4圖係為一薄膜電晶體(TFT)陣列及一電泳薄膜之示意圖；
第5圖係為本發明第二實施例之一可撓性顯示裝置之製造方法的順次步驟之流程圖；以及
第6a圖至第6f圖係為本發明第二實施例之可撓性顯示裝置之製造方法的順次步驟之示意圖。

Claims (12)

  1. 一種可撓性顯示裝置之製造方法，係包含：形成一犧牲層於一載體基板上；形成一可撓性基板於該犧牲層上；形成一薄膜電晶體(TFT)陣列於該可撓性基板上；蝕刻該犧牲層，用以將該可撓性基板自該載體基板上分離；將該可撓性基板附加至一黏附輥；以及將該已經附加至該黏附輥的該可撓性基板附加至一後基板。
  2. 如請求項第1項所述之可撓性顯示裝置之製造方法，更包含：在將該可撓性基板自該載體基板分離之前或在將該可撓性基板附加至該後基板之後，形成一顯示裝置於該可撓性基板上。
  3. 如請求項第2項所述之可撓性顯示裝置之製造方法，更包含：在形成該顯示裝置之後，劃線及密封該附加的可撓性基板。
  4. 如請求項第2項所述之可撓性顯示裝置之製造方法，其中該顯示裝置係為從由一有機發光二極體顯示裝置(OLED)、一液晶顯示裝置(LCD)、一電泳顯示裝置(EPD)、以及一電漿顯示面板(PDP)組成的一組中選擇的任何一種。
  5. 如請求項第1項所述之可撓性顯示裝置之製造方法，其中該犧牲層透過雷射照射蝕刻。
  6. 如請求項第1項所述之可撓性顯示裝置之製造方法，其中該黏附輥係為塗覆有一黏合劑之輥。
  7. 一種可撓性顯示裝置之製造方法，係包含：形成一犧牲層於一載體基板上；形成一緩衝層於該犧牲層上；形成一薄膜電晶體(TFT)陣列於該緩衝層上；蝕刻該犧牲層，用以將其上形成有該薄膜電晶體(TFT)陣列的該緩衝層自該載體基板上分離；將其上形成有該薄膜電晶體(TFT)陣列的該緩衝層附加至一黏附輥；以及將其上形成有該薄膜電晶體(TFT)陣列且已經附加至該黏附輥的該緩衝層附加至一後基板。
  8. 如請求項第7項所述之可撓性顯示裝置之製造方法，更包含：在將其上形成有該薄膜電晶體(TFT)陣列的該緩衝層自該載體基板分離之前，或在將其上形成有該薄膜電晶體(TFT)陣列的該緩衝層附加至該後基板之後，形成一顯示裝置於該後基板上。
  9. 如請求項第8項所述之可撓性顯示裝置之製造方法，更包含：在形成該顯示裝置之後，劃線及密封該附加的後基板。
  10. 如請求項第7項所述之可撓性顯示裝置之製造方法，其中該犧牲層透過雷射照射蝕刻。
  11. 如請求項第7項所述之可撓性顯示裝置之製造方法，其中該黏附輥係為塗覆有一黏合劑之輥。
  12. 如請求項第7項所述之可撓性顯示裝置之製造方法，其中該後基板係為一可撓性基板。
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