US20190097180A1 - Substrate unit, display device and method for manufacturing display device - Google Patents
Substrate unit, display device and method for manufacturing display device Download PDFInfo
- Publication number
- US20190097180A1 US20190097180A1 US16/199,041 US201816199041A US2019097180A1 US 20190097180 A1 US20190097180 A1 US 20190097180A1 US 201816199041 A US201816199041 A US 201816199041A US 2019097180 A1 US2019097180 A1 US 2019097180A1
- Authority
- US
- United States
- Prior art keywords
- glass substrate
- interlayer
- substrate
- display device
- carrier plate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 241
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 65
- 238000000034 method Methods 0.000 title claims abstract description 59
- 239000011521 glass Substances 0.000 claims abstract description 166
- 239000011229 interlayer Substances 0.000 claims abstract description 106
- 239000010410 layer Substances 0.000 claims abstract description 94
- 238000007789 sealing Methods 0.000 claims abstract description 20
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 12
- 150000001875 compounds Chemical class 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- 229920000620 organic polymer Polymers 0.000 claims description 5
- 150000003961 organosilicon compounds Chemical class 0.000 claims description 5
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 4
- 150000004706 metal oxides Chemical class 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 229920005591 polysilicon Polymers 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- 238000010586 diagram Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 9
- 230000002209 hydrophobic effect Effects 0.000 description 8
- 125000000524 functional group Chemical group 0.000 description 7
- 238000000926 separation method Methods 0.000 description 7
- 230000005661 hydrophobic surface Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 4
- 229910052760 oxygen Chemical group 0.000 description 4
- 239000001301 oxygen Chemical group 0.000 description 4
- 239000000565 sealant Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 230000007062 hydrolysis Effects 0.000 description 3
- 238000006460 hydrolysis reaction Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000003153 chemical reaction reagent Substances 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000006482 condensation reaction Methods 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 238000002715 modification method Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 125000004169 (C1-C6) alkyl group Chemical group 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- -1 SiOx) Chemical compound 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000010790 dilution Methods 0.000 description 1
- 239000012895 dilution Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 238000009281 ultraviolet germicidal irradiation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
-
- H01L51/56—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
- B32B37/025—Transfer laminating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B38/00—Ancillary operations in connection with laminating processes
- B32B38/18—Handling of layers or the laminate
- B32B38/1808—Handling of layers or the laminate characterised by the laying up of the layers
-
- H01L27/326—
-
- H01L51/0096—
-
- H01L51/524—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/841—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
- H10K77/10—Substrates, e.g. flexible substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
- B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
- B32B2037/1253—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives curable adhesive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2309/00—Parameters for the laminating or treatment process; Apparatus details
- B32B2309/08—Dimensions, e.g. volume
- B32B2309/10—Dimensions, e.g. volume linear, e.g. length, distance, width
- B32B2309/105—Thickness
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2310/00—Treatment by energy or chemical effects
- B32B2310/08—Treatment by energy or chemical effects by wave energy or particle radiation
- B32B2310/0806—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation
- B32B2310/0831—Treatment by energy or chemical effects by wave energy or particle radiation using electromagnetic radiation using UV radiation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2315/00—Other materials containing non-metallic inorganic compounds not provided for in groups B32B2311/00 - B32B2313/04
- B32B2315/08—Glass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/206—Organic displays, e.g. OLED
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
- B32B2457/208—Touch screens
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1316—Methods for cleaning the liquid crystal cells, or components thereof, during manufacture: Materials therefor
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133308—Support structures for LCD panels, e.g. frames or bezels
- G02F1/133331—Cover glasses
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/13338—Input devices, e.g. touch panels
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1341—Filling or closing of cells
- G02F1/13415—Drop filling process
-
- G02F2001/1316—
-
- G02F2001/133331—
-
- G02F2001/13415—
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2202/00—Materials and properties
- G02F2202/28—Adhesive materials or arrangements
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
- G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
- G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
- G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
- G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
- G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
-
- H01L2251/558—
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/351—Thickness
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/549—Organic PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y02P70/521—
Definitions
- FIG. 2A to FIG. 2G are schematic diagrams of the manufacturing process of the display device according to the first embodiment
- FIG. 6 is a flow chart of the steps of the method for manufacturing a display device according to another embodiment.
- the process is implemented by the existing manufacturing equipment for production, and the produced display device meets the large-scale, thin and lightweight requirements.
- Technologies of a substrate unit, a device substrate, and a display device including a substrate unit and a device substrate can be realized by the following detailed description of a method for manufacturing a display device.
- the step S 01 is to provide a first carrier plate 11 and form a first interlayer 12 on the first carrier plate 11 .
- the first carrier plate 11 for example a glass carrier plate or a silicon substrate is heat resistant, and it may still be thick enough to be a support and meet the requirement of thickness for a process machine.
- the first interlayer 12 is formed on the first carrier plate 11 by, for example, a coating method such as dip coating, roll coating, print coating, spin coating or the like, but it is not limited thereto.
- R1, R2 and R3 are each independently C1-6 alkyl groups
- X is silicon (Si), titanium (Ti) or aluminum (Al)
- Y is a hydrophobic functional group.
- a hydroxyl group (—OH) formed by hydrolysis and self-condensation can act as a reactive functional group to react with a hydroxyl group exposed on the surface of the first carrier plate 11 so as to form a bond. Then, after further hydrolysis and condensation reactions, part or all of the bonds can be condensed and form oxygen bonds, which results in difficult separation between the first carrier plate 11 and the first interlayer 12 .
- hydrophobic functional groups Y will not react with the first carrier plate 11 , the hydrophobic functional groups Y can be exposed on the surface of the first interlayer 12 after hydrolysis and condensation reactions. Thereby, a hydrophobic surface is formed (referred to as a first release surface here).
- a roller A is used to extrude air between the first glass substrate 13 and the first interlayer 12 (stamping with a stamping machine) to dispose the first glass substrate 13 on the first interlayer 12 .
- the size of the first glass substrate 13 cannot be much less than that of the first carrier plate 11 .
- the edge of the first glass substrate 13 is located about 1 to 2 mm distant from the edge of the first carrier plate 11 .
- the thickness of the first glass substrate 13 is less than that of the first carrier plate 11
- the thickness of the first interlayer 12 is less than that of the first glass substrate 13 .
- the first interlayer 12 is a polymer layer formed by organic polymers
- a surface modification method can be used to modify the surface of the first interlayer 12 .
- the surface modification method may include an ionized gas treatment, UV irradiation, or a wet chemical treatment.
- the hydrophobic functional groups Y is exposed on the surface of the first interlayer 12 to form a hydrophobic surface.
- the step S 06 is performed to oppositely place and then combine the second substrate unit U 2 and the first device substrate E 1 .
- the method for manufacturing the display device can further comprise: forming a sealing layer 27 on the outer periphery of the second glass substrate 23 .
- the sealing layer 27 is a frit and a pre-sintering process can be performed on the sealing layer 27 for example by heat energy (e.g. a laser beam, a high temperature of 400° C.
- the above substrate unit (U 1 , U 2 ), device substrate (E 1 ) and the display device 3 can be produced using the existing manufacturing equipment, and the display device 3 can also meet the large-scale, thin and lightweight requirements.
- the first carrier plate 11 and the second carrier plate 21 can be recycled for reuse after the first carrier plate 11 and the first interlayer 12 in FIG. 2G are separated and the second carrier plate 21 and the second interlayer 22 are separated.
- the method for manufacturing the display device 3 a is similar to the above-mentioned steps S 01 to S 05 , so it is not repeated here.
- the first device layer 14 of the embodiment includes a TFT device, and the first device substrate E 1 is a TFT substrate.
- the method for manufacturing the display device 3 a in the embodiment can further include: forming a second device layer 24 on the second glass substrate 23 to obtain a second device substrate E 2 .
- the second device layer 24 includes a color filter
- the second device substrate E 2 is a color filter substrate.
- the first function layer 16 can prevent the reagents in the subsequent processes from seeping into the interface between the first glass substrate 13 and the first interlayer 12 and from damaging the function of the first interlayer 12 .
- the separation of the first glass substrate 13 and the first interlayer 12 can be easier in the subsequent processes. Because the distance between edges of the first glass substrate 13 and the first carrier plate 11 is 1 mm to 2 mm and the distance between edges of the first interlayer 12 and the first carrier plate 11 is 2 mm to 5 mm, the first glass substrate 13 and the first carrier plate 11 may still be attached and cannot be separated after the high temperature process due to the area of the first carrier plate 11 not covered by the first interlayer 12 .
- a difference between the methods for manufacturing the display device 3 c and the display device 3 b is that, as shown in FIGS. 5B and 5C , the first function layer 16 covers the lateral periphery and the upper surface of the first interlayer 12 in the manufacturing process of the display device 3 c, so the first function layer 16 may be between the first interlayer 12 and the first glass substrate 13 .
- the second function layer 26 covers the lateral periphery and the upper surface of the second interlayer 22 , and the second function layer 26 may be between the second interlayer 22 and the second glass substrate 23 . Because the step S 06 ( FIG. 5E ) and the step S 07 ( FIG. 5F ) may refer to the above description, they are not repeated here.
Abstract
Description
- This application is a Divisional Application (DA) of an earlier filed, pending, application, having application Ser. No. 15/183,527 and filed on Jun. 15, 2016, the content of which, including drawings, is expressly incorporated by reference herein.
- The invention relates to a substrate unit, a display device, and a method for manufacturing the display device.
- With the advance of technology, flat display devices have been broadly applied to various fields, for example liquid crystal display devices or organic light emitting diode (OLED) display devices. Because flat display devices have superior characteristics of compact volume, low power consumption and low radiation, they gradually replace conventional cathode ray tube display devices and are applied to various electronic products such as mobile phones, portable media devices, laptops, tablet computers, and other display devices.
- Because of large-scale, thin and lightweight requirements of a display device, a thinner glass substrate of a display panel is developed from the thickness of 0.5 mm-0.7 mm to the thickness of 0.3 mm (or less). However, if the thickness of the glass substrate is equal to or less than 0.3 mm, the process of forming semiconductor devices for displaying on the surface of the glass substrate cannot be implemented by the existing manufacturing equipment due to thinness and insufficient rigidity of the thin glass substrate.
- One conventional solution is to attach a thin glass to another thicker glass carrier plate to increase its rigidity, and then they will be separated after the manufacturing process is accomplished. However, in a subsequent high temperature process (higher than 250° C. for example), silicon and oxygen bonds (—Si—O—Si—) between the glass carrier plate and the thin glass are formed, which results in difficult separation between the thin glass and the glass carrier plate.
- Another conventional solution is to attach a thin glass to a glass carrier plate by adhesion using glue material. However, because general glue materials have poor heat resistances, excess glue or bubbles occur during coating. Moreover, some residual glue during separation results in less efficiency for recycling the glass carrier plate.
- An aspect of the disclosure is to provide a substrate unit, a display device, and a method for manufacturing the display device adapted to the existing manufacturing equipment for production and meeting the large-scale, thin and lightweight requirements of display device.
- A method for manufacturing the display device includes the steps of: providing a first carrier plate and forming a first interlayer on the first carrier plate; disposing a first glass substrate on the first interlayer to form a first substrate unit; forming a first device layer on the first glass substrate to obtain a first device substrate; providing a second carrier plate and forming a second interlayer on the second carrier plate; disposing a second glass substrate on the second interlayer to form a second substrate unit; oppositely placing and then combining the second substrate unit and the first device substrate; and separating the first glass substrate from the first interlayer and separating the second glass substrate from the second interlayer to obtain the display device. Alternatively, the method may further include the steps of: separating the second glass substrate from the second interlayer; forming an electrode layer on an exterior surface of the second glass substrate away from the first glass substrate; and separating the first glass substrate from the first interlayer to obtain the display device. By the manufacturing process mentioned above, the substrate unit and the display device can be produced by the existing manufacturing equipment, and the display device can also meet the large-scale, thin and lightweight requirements.
- The invention will become more fully understood from the detailed description and accompanying drawings, which are given for illustration only, and thus are not limitative of the present invention, and wherein:
-
FIG. 1 is a flow chart of the steps of the method for manufacturing a display device according to an embodiment; -
FIG. 2A toFIG. 2G are schematic diagrams of the manufacturing process of the display device according to the first embodiment; -
FIG. 3A toFIG. 3F are schematic diagrams of the manufacturing process of the display device according to the second embodiment; -
FIG. 4A toFIG. 4F are schematic diagrams of the manufacturing process of the display device according to the third embodiment; -
FIG. 5A toFIG. 5F are schematic diagrams of the manufacturing process of the display device according to the fourth embodiment; -
FIG. 6 is a flow chart of the steps of the method for manufacturing a display device according to another embodiment; and -
FIG. 7A toFIG. 7D are schematic diagrams of the manufacturing process of the display device according to the fourth embodiment. - The embodiments of the invention will be apparent from the following detailed description, which proceeds with reference to the accompanying drawings, wherein the same references relate to the same elements.
- A cleaning process such as water wash or ozone ashing is performed on the surfaces of a carrier plate and a thin glass substrate before a process for thinning the display device. After the cleaning process, hydroxyl groups (—OH) are formed on the surfaces of the carrier plate and the thin glass substrate. If the carrier plate is directly attached to the thin glass substrate, a subsequent high temperature process (>250° C.) will cause reactions of hydroxyl groups between them to form silicon and oxygen bonds (—Si—O—Si—) so the carrier plate and the thin glass substrate will not be easily separated and it is difficult to make the display device thinner and recycle the carrier plate for reuse. The disclosure provides the following manufacturing process to avoid the aforementioned problems. The process is implemented by the existing manufacturing equipment for production, and the produced display device meets the large-scale, thin and lightweight requirements. Technologies of a substrate unit, a device substrate, and a display device including a substrate unit and a device substrate can be realized by the following detailed description of a method for manufacturing a display device.
- Referring to
FIG. 1 andFIG. 2A toFIG. 2G ,FIG. 1 is a flow chart of steps of a method for manufacturing a display device according to an embodiment, andFIG. 2A toFIG. 2G are schematic diagrams of the manufacturing process of thedisplay device 3 according to the first embodiment. - As shown in
FIG. 1 , the method for manufacturing the display device includes the step S01 to the step S07. - First, as shown in
FIG. 1 andFIG. 2A , the step S01 is to provide afirst carrier plate 11 and form afirst interlayer 12 on thefirst carrier plate 11. Here, thefirst carrier plate 11 for example a glass carrier plate or a silicon substrate is heat resistant, and it may still be thick enough to be a support and meet the requirement of thickness for a process machine. Thefirst interlayer 12 is formed on thefirst carrier plate 11 by, for example, a coating method such as dip coating, roll coating, print coating, spin coating or the like, but it is not limited thereto. Moreover, thefirst interlayer 12 can be coated on thefirst carrier plate 11 and 2 to 5 mm distant from the edge of thefirst carrier plate 11 by physical vapor deposition (PVD), chemical vapor deposition (CVD), slit coater, or other coating equipment. In addition, thefirst interlayer 12 can tolerate high temperature of 250° C. to 800° C., preferably, 600° C. to 800° C. It can also tolerate a subsequent semiconductor device process for amorphous silicon (a-Si), amorphous indium gallium zinc oxide (a-IGZO), c-axis aligned crystal indium gallium zinc oxide (CAAC-IGZO), low temperature poly silicon (LTPS) or the like. The material of thefirst interlayer 12 can be a metal, a metal oxide (e.g. indium tin oxide (ITO)), a silicon oxide (e.g. SiOx), an organosilicon compound, an organotitanium compound, an organoaluminum compound, or an organic polymer, and it is not limited thereto. - In one embodiment, the
first interlayer 12 may be formed by, for example, the below organosilicon compound: - Here, R1, R2 and R3 are each independently C1-6 alkyl groups, X is silicon (Si), titanium (Ti) or aluminum (Al), and Y is a hydrophobic functional group. When the
first carrier plate 11 is coated with the above compound, a hydroxyl group (—OH) formed by hydrolysis and self-condensation can act as a reactive functional group to react with a hydroxyl group exposed on the surface of thefirst carrier plate 11 so as to form a bond. Then, after further hydrolysis and condensation reactions, part or all of the bonds can be condensed and form oxygen bonds, which results in difficult separation between thefirst carrier plate 11 and thefirst interlayer 12. Moreover, because the hydrophobic functional groups Y will not react with thefirst carrier plate 11, the hydrophobic functional groups Y can be exposed on the surface of thefirst interlayer 12 after hydrolysis and condensation reactions. Thereby, a hydrophobic surface is formed (referred to as a first release surface here). - Subsequently, the step S02 is performed to dispose a
first glass substrate 13 on thefirst interlayer 12 to form a first substrate unit U1 (referred to as a substrate unit U1). Here, air between thefirst glass substrate 13 and thefirst interlayer 12 is excluded by, for example, vacuum lamination or stamping with a stamping machine so as to generate a pressure difference between two sides of thefirst glass substrate 13. Thereby, thefirst glass substrate 13 is disposed on thefirst carrier plate 11 having thefirst interlayer 12 by atmospheric pressure and the electrostatic force between thefirst glass substrate 13 and thefirst interlayer 12. In the embodiment, as shown inFIG. 2A , a roller A is used to extrude air between thefirst glass substrate 13 and the first interlayer 12 (stamping with a stamping machine) to dispose thefirst glass substrate 13 on thefirst interlayer 12. For better utilization of glass, the size of thefirst glass substrate 13 cannot be much less than that of thefirst carrier plate 11. Preferably, the edge of thefirst glass substrate 13 is located about 1 to 2 mm distant from the edge of thefirst carrier plate 11. The thickness of thefirst glass substrate 13 is less than that of thefirst carrier plate 11, and the thickness of thefirst interlayer 12 is less than that of thefirst glass substrate 13. Here, the thickness of thefirst glass substrate 13 may be between 0.05 mm and 0.3 mm (0.05 mm≤the thickness of thefirst glass substrate 13≤0.3 mm, and the thickness of thefirst interlayer 12 may be between 0.01 μm and 2 μm (0.01 μm≤the thickness of thefirst interlayer 12≤2 μm). The material of thefirst glass substrate 13 may be glass. Thefirst glass substrate 13 itself can be a support, and itself is flexible, chemical-resistant and capable of blocking water and oxygen. Thus, it can be used as a substrate for an organic light-emitting diode (OLED) display, a liquid crystal display (LCD) or a light-emitting diode (LED) display. Moreover, thefirst glass substrate 13 can tolerate higher temperature in comparison with thefirst interlayer 12 to accomplish the above-mentioned processes for low temperature poly silicon and other devices or other processes such as laser debonding or laser curing. - The surface roughness of the material of the
first interlayer 12 needs to be less than 10 nm RMS (root mean square). The excessive surface roughness will cause insufficient contact area so bad attaching, bubbles, mura or the like may occur. These problems easily cause the abnormal misjudgment at an inspection station in subsequent processes, or the peeling at the interface between thefirst glass substrate 13 and thefirst carrier plate 11 occurs due to reagents seeping into the interface in the processes. - In the
first interlayer 12, the first release surface (namely hydrophobic surface) is a surface adjacent to (facing) thefirst glass substrate 13. The hydrophilic/hydrophobic properties of the first release surface relate to the adhesion force between thefirst interlayer 12 and thefirst glass substrate 13. Therefore, dilution ratios between the above-mentioned compounds and solvents can be changed, or bondings between hydrophobic functional groups Y and X can be more selectively broken by an illumination process to adjust the proportion of exposed hydrophobic functional groups Y. Then, the hydrophilic/hydrophobic properties of the hydrophobic surface can be controlled (namely the water contact angle can be controlled), so the adhesion force between thefirst interlayer 12 and thefirst carrier plate 11 is greater than that between thefirst interlayer 12 and thefirst glass substrate 13. Accordingly, a subsequent separation of thefirst interlayer 12 and thefirst glass substrate 13 becomes easier. Here, the water contact angle of the first release surface (hydrophobic surface) of thefirst interlayer 12 may be between 40° and 90°, preferably, between 50° and 80°. - In another embodiment, if the
first interlayer 12 is a polymer layer formed by organic polymers, a surface modification method can be used to modify the surface of thefirst interlayer 12. Here, the surface modification method may include an ionized gas treatment, UV irradiation, or a wet chemical treatment. Thereby, the hydrophobic functional groups Y is exposed on the surface of thefirst interlayer 12 to form a hydrophobic surface. - Subsequently, as shown in
FIG. 2C , the step S03 is performed to form afirst device layer 14 on thefirst glass substrate 13 to obtain a first device substrate E1 (referred to as a device substrate E1). Here, thefirst device layer 14 may include a thin film transistor (TFT) device, a color filter, an organic light emitting diode unit (including a TFT device and an organic light emitting device), or a touch device. The material of the active layer of the above-mentioned TFT device may be the above mentioned amorphous silicon, amorphous indium gallium zinc oxide, c-axis aligned crystal indium gallium zinc oxide, or low temperature poly silicon. In the embodiment, thefirst device layer 14 includes an organic light emitting diode unit, and the first device substrate E1 is an organic light emitting diode substrate. - Then, as shown in
FIG. 2D , the step S04 is to provide asecond carrier plate 21 and form asecond interlayer 22 on thesecond carrier plate 21; the step S05 is to dispose asecond glass substrate 23 on thesecond interlayer 22 to form a second substrate unit U2. Here, the step S04 can refer to the above step S01, the step S05 can refer to the above step S02, so they are not repeated here. For example, the second substrate unit U2 can be obtained first (the step S04 to S05) and then the first device substrate E1 is obtained (the step S01 to S03), or they can be performed simultaneously, and the order is not limited thereto. The materials of thesecond carrier plate 21, thesecond interlayer 22, and thesecond glass substrate 23 may be the same as those of thefirst carrier plate 11, thefirst interlayer 12, and thefirst glass substrate 13, but they are not limited thereto. - Then, the step S06 is performed to oppositely place and then combine the second substrate unit U2 and the first device substrate E1. However, in the embodiment, before the step S06 of oppositely placing and then combining the second substrate unit U2 and the first device substrate E1 is performed, as shown in
FIG. 2D , the method for manufacturing the display device can further comprise: forming asealing layer 27 on the outer periphery of thesecond glass substrate 23. Here, thesealing layer 27 is a frit and a pre-sintering process can be performed on thesealing layer 27 for example by heat energy (e.g. a laser beam, a high temperature of 400° C. to 500° C.), and then the step S06 of oppositely placing and then combining the second substrate unit U2 and the first device substrate E1 is performed as shown inFIG. 2E . Here, the second substrate unit U2 is inverted and combined with the first device substrate E1, and then thesealing layer 27 is heated from the upper surface of thesecond carrier plate 21 by heat energy of higher temperature (e.g. a laser beam, a high temperature of 500° C. to 800° C.). Thus, as shown inFIG. 2F , an enclosed space is formed by thesealing layer 27, thefirst glass substrate 13, and the second glass substrate 23 (this is a sintering sealing process), so thefirst device layer 14 is located in the enclosed space. Moreover, a linear or planar sealant structure may exist between the sealinglayer 27 and thefirst device layer 14, and a linear or planar sealant structure also may exist between the sealinglayer 27 and the fringes of thefirst glass substrate 13 or thesecond glass substrate 23 for sealing or support. Furthermore, a transparent filler layer may exist between thefirst device layer 14, thesecond glass substrate 23, and thesealing layer 27. The enclosed space can be filled with the transparent filler layer to support the height of the space, and light can penetrate the transparent filler layer. A spacer may exist between thefirst device layer 14 and thesecond glass substrate 23 for supporting the height of the space. - Finally, as shown in
FIG. 2G , the step S07 is performed to separate thefirst glass substrate 13 from thefirst interlayer 12 and separate thesecond glass substrate 23 and thesecond interlayer 22 to obtain thedisplay device 3. Thefirst interlayer 12 has a first release surface (hydrophobic surface) whose water contact angle is between 40° and 90°, and the adhesion force between thefirst interlayer 12 and thefirst carrier plate 11 is greater than that between thefirst interlayer 12 and thefirst glass substrate 13. Therefore, a knife, for example, can be inserted between thefirst interlayer 12 and thefirst glass substrate 13 to break the vacuum between thefirst interlayer 12 and thefirst glass substrate 13 so as to separate thefirst glass substrate 13 from thefirst interlayer 12. Similarly, thesecond glass substrate 23 is separated from thesecond interlayer 22 to obtain thedisplay device 3. Here, thedisplay device 3 is an OLED display device. The order of the above-mentioned separation of thefirst glass substrate 13 from thefirst interlayer 12 and the separation of thesecond glass substrate 23 from thesecond interlayer 22 is not limited. - Accordingly, the above substrate unit (U1, U2), device substrate (E1) and the
display device 3 can be produced using the existing manufacturing equipment, and thedisplay device 3 can also meet the large-scale, thin and lightweight requirements. In addition, subsequent to the step S07, thefirst carrier plate 11 and thesecond carrier plate 21 can be recycled for reuse after thefirst carrier plate 11 and thefirst interlayer 12 inFIG. 2G are separated and thesecond carrier plate 21 and thesecond interlayer 22 are separated. - The
display device 3 is further illustrated below withFIG. 2G . Thedisplay device 3 includes afirst glass substrate 13, asecond glass substrate 23, a first device layer 14 (referred to as device layer), and asealing layer 27. Here, thefirst device layer 14 is disposed between thefirst glass substrate 13 and thesecond glass substrate 23. Thesealing layer 27 is disposed between thefirst glass substrate 13 and thesecond glass substrate 23. An enclosed space is formed by thesealing layer 27, thefirst glass substrate 13 and thesecond glass substrate 23. Thefirst device layer 14 is disposed in the enclosed space. The thicknesses of thefirst glass substrate 13 and thesecond glass substrate 23 are respectively between 0.05 mm and 0.3 mm, and the exterior surfaces of thefirst glass substrate 13 and thesecond glass substrate 23 are smooth surfaces without etched dimples. Here, that “the exterior surfaces of thefirst glass substrate 13 and thesecond glass substrate 23 are smooth surfaces without etched dimples” indicates that thefirst glass substrate 13 and thesecond glass substrate 23 of thedisplay device 3 are not thinned by conventional chemical etching method (e.g. chemical thinning by hydrofluoric acid (HF)) but directly produced by the above-mentioned steps of the method for manufacturing display device. Therefore, there are not etched dimples (pits) caused by the etching process on the surface of thedisplay device 3. - In the embodiment, the
first device layer 14 may include an OLED unit, thesealing layer 27 may be a frit, and thedisplay device 3 is an OLED display device. In another embodiment, thefirst device layer 14 may include a combination of a TFT device and a color filter and a plurality of liquid crystal molecules, and thesealing layer 27 may be a sealant, so thedisplay device 3 is a liquid crystal display device. In addition, in another embodiment, thedisplay device 3 may further include an electrode layer (not shown in figures) which is disposed on an exterior surface of thesecond glass substrate 23 away from thefirst glass substrate 13. Here, the electrode layer may be a touch electrode layer (including a drive electrode and a sensing electrode, Tx and Rx). For example, indium tin oxide (ITO) may be formed on the upper surface of thesecond glass substrate 23 by a low temperature process (e.g. less than 120° C.), so thedisplay device 3 is a display device with a touch function. - Moreover, the manufacturing process of the display device according to the second embodiment is illustrated with
FIG. 1 andFIGS. 3A to 3F . Here,FIGS. 3A to 3F are schematic diagrams of the manufacturing process of thedisplay device 3 a according to the second embodiment. - The method for manufacturing the
display device 3 a is similar to the above-mentioned steps S01 to S05, so it is not repeated here. As shown inFIG. 3C , thefirst device layer 14 of the embodiment includes a TFT device, and the first device substrate E1 is a TFT substrate. Moreover, compared with the method for manufacturing thedisplay device 3, before the step S06 of oppositely placing and then combining the second substrate unit U2 (not shown in figures) and the first device substrate E1, as shown inFIG. 3D , the method for manufacturing thedisplay device 3 a in the embodiment can further include: forming asecond device layer 24 on thesecond glass substrate 23 to obtain a second device substrate E2. Here, thesecond device layer 24 includes a color filter, and the second device substrate E2 is a color filter substrate. - Then, the step S06 is performed. As shown in
FIG. 3E , the second substrate unit U2 (the second device substrate E2) is inverted to make the second substrate unit U2 (the second device substrate E2) and the first device substrate E1 oppositely placed, and then the second substrate unit U2 (the second device substrate E2) is combined with the first device substrate E1. - Finally, as shown in
FIG. 3F , the step S07 is performed to separate thefirst glass substrate 13 from thefirst interlayer 12 and separate thesecond glass substrate 23 from thesecond interlayer 22 to obtain thedisplay device 3 a. Here, a knife, for example, can be inserted between thefirst interlayer 12 and thefirst glass substrate 13 to break the vacuum between thefirst interlayer 12 and thefirst glass substrate 13 so as to separate thefirst glass substrate 13 from thefirst interlayer 12. Similarly, thesecond glass substrate 23 is also separated from thesecond interlayer 22 to obtain thedisplay device 3 a. In the embodiment, thedisplay device 3 a is a liquid crystal display device. Therefore, before the combination of the above-mentioned step S06, a space on the first device substrate E1 surrounded by a sealant can be filled with liquid crystal molecules by, for example but not limited to, one drop filling (ODF), and then the second device substrate E2 is combined with the first device substrate E1. - Moreover, other illustrations of the
display device 3 a and the manufacturing method thereof may refer to the corresponding elements of theabove display device 3 and the manufacturing method thereof, so they are repeated here. - Moreover, the manufacturing process of the display device according to the third embodiment is illustrated with
FIG. 1 andFIGS. 4A to 4F .FIGS. 4A to 4F are schematic diagrams of the manufacturing process of thedisplay device 3 b according to the third embodiment. - The method for manufacturing the
display device 3 b similarly includes the above-mentioned step S01 and step S02. However, before the step S03 of forming thefirst device layer 14 on thefirst glass substrate 13, as shown inFIG. 4B , the method for manufacturing thedisplay device 3 b further includes: forming afirst function layer 16 on thefirst carrier plate 11. Thefirst glass substrate 13 is directly disposed on thefirst interlayer 12, thefirst function layer 16 is disposed on the lateral peripheries of thefirst interlayer 12 and thefirst glass substrate 13. Thefirst function layer 16 connects thefirst carrier plate 11 and thefirst glass substrate 13. Thefirst function layer 16 can prevent the reagents in the subsequent processes from seeping into the interface between thefirst glass substrate 13 and thefirst interlayer 12 and from damaging the function of thefirst interlayer 12. Thus, the separation of thefirst glass substrate 13 and thefirst interlayer 12 can be easier in the subsequent processes. Because the distance between edges of thefirst glass substrate 13 and thefirst carrier plate 11 is 1 mm to 2 mm and the distance between edges of thefirst interlayer 12 and thefirst carrier plate 11 is 2 mm to 5 mm, thefirst glass substrate 13 and thefirst carrier plate 11 may still be attached and cannot be separated after the high temperature process due to the area of thefirst carrier plate 11 not covered by thefirst interlayer 12. Therefore, thefirst function layer 16 is disposed on the lateral peripheries of thefirst interlayer 12 and thefirst glass substrate 13 and covers the area of thefirst carrier plate 11 that is not covered by thefirst interlayer 12. The viscosity of thefirst function layer 16 has to be between 3 and 15 cps to avoid the effusion to the back of thefirst carrier plate 11 and avoid subsequent contamination to equipment. Moreover, the range that the surface of thefirst glass substrate 13 is coated with thefirst function layer 16 is between 0 μm and 500 μm, which avoids that the material cannot be filmed on the surface of thefirst glass substrate 13 in subsequent device process. - Later, as shown in
FIG. 4C , the step S03 is further performed to form thefirst device layer 14 on thefirst glass substrate 13 to obtain the first device substrate E1. Similarly, before forming thesecond device layer 24 on thesecond glass substrate 23, as shown inFIG. 4D , the method for manufacturing thedisplay device 3 b may further include: forming asecond function layer 26 on thesecond carrier plate 21. Thesecond function layer 26 is disposed on the lateral peripheries of thesecond interlayer 22 and thesecond glass substrate 23 to obtain the second device substrate E2. In the embodiment, the materials of thefirst function layer 16 and thesecond function layer 26 may respectively be metal, metal oxides, silicon oxides, organosilicon compounds, organotitanium compounds, organoaluminum compounds, or organic polymers, and they are not limited thereto. - Then, the step S06 (
FIG. 4E ) and the step S07 (FIG. 4F ) may refer to above description, so they are not repeated here. In the manufacturing process of thedisplay device 3 b according to the embodiment, thefirst device layer 14 includes a TFT device, the first device substrate E1 is a TFT substrate, thesecond device layer 24 includes a color filter, and the second device substrate E2 a color filter substrate. Therefore, thedisplay device 3 b inFIG. 4F is a liquid crystal display device. - In addition, other illustrations of the
display device 3 b and the manufacturing method thereof may refer to the corresponding elements of theabove display devices - Moreover, the manufacturing process of the display device according to the fourth embodiment is illustrated with
FIG. 1 andFIGS. 5A to 5F . Here,FIGS. 5A to 5F are schematic diagrams of the manufacturing process of thedisplay device 3 c according to the fourth embodiment. - A difference between the methods for manufacturing the
display device 3 c and thedisplay device 3 b is that, as shown inFIGS. 5B and 5C , thefirst function layer 16 covers the lateral periphery and the upper surface of thefirst interlayer 12 in the manufacturing process of thedisplay device 3 c, so thefirst function layer 16 may be between thefirst interlayer 12 and thefirst glass substrate 13. Similarly, as shown inFIG. 5D , thesecond function layer 26 covers the lateral periphery and the upper surface of thesecond interlayer 22, and thesecond function layer 26 may be between thesecond interlayer 22 and thesecond glass substrate 23. Because the step S06 (FIG. 5E ) and the step S07 (FIG. 5F ) may refer to the above description, they are not repeated here. In the manufacturing process of thedisplay device 3 c according to the embodiment, thefirst device layer 14 includes a TFT device, the first device substrate E1 is a TFT substrate, thesecond device layer 24 includes a color filter, and the second device substrate E2 is a color filter substrate. Therefore, thedisplay device 3 c inFIG. 5F is also a liquid crystal display device. - Moreover, other illustrations of the
display device 3 c and the manufacturing method thereof may refer to the same devices of theabove display devices - Then, the manufacturing process of the display device according to the fourth embodiment is illustrated with
FIG. 6 andFIGS. 7A to 7D . Here,FIG. 6 is a flow chart of steps of a method for manufacturing a display device according to another preferred embodiment, andFIGS. 7A to 7D are schematic diagrams of the manufacturing process of thedisplay device 3 d according to the fourth embodiment. - As shown in
FIG. 6 , the method for manufacturing the display device according to the fourth embodiment includes the steps P01 to P09. Because the steps P01 to P06 are the same as the steps S01 to S06 and they can refer to the above description, they are repeated here. Accordingly, after the process of the step P01 to the step P06, thedisplay device 3 d according to the fourth embodiment has the structure as shown inFIG. 7A . Then, as shown inFIG. 7B , the step P07 is performed to separate thesecond glass substrate 23 from thesecond interlayer 22. Here, a knife, for example, can be inserted between thesecond glass substrate 23 and thesecond interlayer 22 to break the vacuum between thesecond glass substrate 23 and thesecond interlayer 22 so as to separate thesecond glass substrate 23 and thesecond interlayer 22. - Because the total thickness of Cell according to the embodiment (0.5t/0.2t/0.2t) is close to the thickness of a product produced by conventional technology (0.5t/0.5t), a process of forming a touch electrode (namely touch on display, TOD) can be directly performed. As shown in
FIG. 7C , the step P08 is performed to form anelectrode layer 25 on an exterior surface of thesecond glass substrate 23 away from thefirst glass substrate 13. Here, theelectrode layer 25 is a touch electrode layer (including a drive electrode and a sensing electrode, Tx and Rx). For example, ITO is formed on the upper surface of thesecond glass substrate 23 by a low temperature process (e.g. less than 120° C.). In this step, if manufacturing theelectrode layer 25 is not successful, theelectrode layer 25 can be reworked. Therefore, the yield rate of product can be improved. - Finally, as shown in
FIG. 7D , the step P09 is further performed to separate thefirst glass substrate 13 from thefirst interlayer 12 to obtain thedisplay device 3 d. Therefore, thedisplay device 3 d according to the embodiment includes thefirst glass substrate 13, thefirst device layer 14, thesecond glass substrate 23, thesecond device layer 24 and theelectrode layer 25, and it is a liquid crystal display device with a touch function. - In addition, other illustrations of the
display device 3 d and the manufacturing method thereof may refer to the corresponding elements of theabove display devices - It should be noted that the structures and the features of the
first function layer 16 and thesecond function layer 26 in the manufacturing process of thedisplay device 3 d are the same as those of thefirst function layer 16 and thesecond function layer 26 of thedisplay device 3 b. However, in the different embodiment, the structures and the features of thefirst function layer 16 and thesecond function layer 26 in the manufacturing process of thedisplay device 3 d may also be the same as those in the manufacturing process of thedisplay device 3 c. Moreover, a person skilled in the art may also apply the step P07 to the step P09 of the manufacturing process of thedisplay device 3 d according to the fourth embodiment to thedisplay devices display devices - In summary, the method for manufacturing the display device according to the disclosure includes the steps of: providing a first carrier plate and forming a first interlayer on the first carrier plate; disposing a first glass substrate on the first interlayer to form a first substrate unit; forming a first device layer on the first glass substrate to obtain a first device substrate; providing a second carrier plate and forming a second interlayer on the second carrier plate; disposing a second glass substrate on the second interlayer to form a second substrate unit; oppositely placing and then combining the second substrate unit and the first device substrate; and separating the first glass substrate from the first interlayer and separating the second glass substrate from the second interlayer to obtain the display device. Alternatively, the method further may include the steps of: separating the second glass substrate from the second interlayer; forming an electrode layer on an exterior surface of the second glass substrate away from the first glass substrate; and separating the first glass substrate from the first interlayer to obtain the display device. By the manufacturing process mentioned above, the substrate unit and the display device according to the disclosure can be produced using the existing manufacturing equipment, and the display device can meet the large-scale, thin and lightweight requirements.
- Although the present invention has been described with reference to specific embodiments, this description is not meant to be construed in a limiting sense. Various modifications of the disclosed embodiments, as well as alternative embodiments, will be apparent to persons skilled in the art. It is, therefore, contemplated that the appended claims will cover all modifications that fall within the true scope of the present invention.
Claims (19)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US16/199,041 US20190097180A1 (en) | 2015-07-17 | 2018-11-23 | Substrate unit, display device and method for manufacturing display device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW104123336A TWI551440B (en) | 2015-07-17 | 2015-07-17 | Substrate unit, element substrate and manufacturing method of display device |
TW104123336 | 2015-07-17 | ||
US15/183,527 US10177346B2 (en) | 2015-07-17 | 2016-06-15 | Substrate unit, display device and method for manufacturing display device |
US16/199,041 US20190097180A1 (en) | 2015-07-17 | 2018-11-23 | Substrate unit, display device and method for manufacturing display device |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/183,527 Division US10177346B2 (en) | 2015-07-17 | 2016-06-15 | Substrate unit, display device and method for manufacturing display device |
Publications (1)
Publication Number | Publication Date |
---|---|
US20190097180A1 true US20190097180A1 (en) | 2019-03-28 |
Family
ID=57774955
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/183,527 Active 2037-02-10 US10177346B2 (en) | 2015-07-17 | 2016-06-15 | Substrate unit, display device and method for manufacturing display device |
US16/199,041 Abandoned US20190097180A1 (en) | 2015-07-17 | 2018-11-23 | Substrate unit, display device and method for manufacturing display device |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US15/183,527 Active 2037-02-10 US10177346B2 (en) | 2015-07-17 | 2016-06-15 | Substrate unit, display device and method for manufacturing display device |
Country Status (2)
Country | Link |
---|---|
US (2) | US10177346B2 (en) |
TW (1) | TWI551440B (en) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI634371B (en) * | 2017-09-29 | 2018-09-01 | 台虹科技股份有限公司 | Method of transferring micro device |
CN112297586B (en) * | 2020-10-14 | 2023-07-28 | 河北光兴半导体技术有限公司 | Method for separating laminated glass assembly for display panel |
CN112505954B (en) * | 2020-12-09 | 2023-07-18 | 业成科技(成都)有限公司 | Production method, vacuumizing device and production equipment of liquid crystal display module |
CN116409046B (en) * | 2023-04-14 | 2023-10-20 | 青岛欣晶玻璃科技有限公司 | Glue overflow preventing device for processing laminated glass |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060250559A1 (en) * | 2003-07-03 | 2006-11-09 | Bocko Peter L | Glass product for use in ultra-thin glass display applications |
US20110012873A1 (en) * | 2009-07-15 | 2011-01-20 | Prest Christopher D | Display modules |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0171092B1 (en) | 1995-07-06 | 1999-05-01 | 구자홍 | Method of manufacturing substrate |
WO2003023594A1 (en) | 2001-09-06 | 2003-03-20 | Nissha Printing Co., Ltd. | Touch panel having high durability |
KR101254418B1 (en) | 2009-08-31 | 2013-04-15 | 아사히 가라스 가부시키가이샤 | Peeling device |
KR20130097069A (en) | 2010-05-11 | 2013-09-02 | 아사히 가라스 가부시키가이샤 | Process for producing laminate, and laminate |
WO2012021197A2 (en) * | 2010-05-21 | 2012-02-16 | Arizona Board Of Regents, For And On Behalf Of Arizona State University | Method of manufacturing electronic devices on both sides of a carrier substrate and electronic devices thereof |
JP5355618B2 (en) * | 2011-03-10 | 2013-11-27 | 三星ディスプレイ株式會社 | Flexible display device and manufacturing method thereof |
TWI516567B (en) * | 2013-03-26 | 2016-01-11 | 群創光電股份有限公司 | Method for manufacturing display panel |
KR20150001441A (en) * | 2013-06-27 | 2015-01-06 | 삼성디스플레이 주식회사 | Manufacturing method of flexible display device |
JP2015091746A (en) * | 2013-09-30 | 2015-05-14 | 日本電気硝子株式会社 | Method of producing film-like glass, method of producing electronic device and method of producing glass film laminate |
-
2015
- 2015-07-17 TW TW104123336A patent/TWI551440B/en active
-
2016
- 2016-06-15 US US15/183,527 patent/US10177346B2/en active Active
-
2018
- 2018-11-23 US US16/199,041 patent/US20190097180A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20060250559A1 (en) * | 2003-07-03 | 2006-11-09 | Bocko Peter L | Glass product for use in ultra-thin glass display applications |
US20110012873A1 (en) * | 2009-07-15 | 2011-01-20 | Prest Christopher D | Display modules |
Also Published As
Publication number | Publication date |
---|---|
US10177346B2 (en) | 2019-01-08 |
TWI551440B (en) | 2016-10-01 |
TW201704017A (en) | 2017-02-01 |
US20170017102A1 (en) | 2017-01-19 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US20190097180A1 (en) | Substrate unit, display device and method for manufacturing display device | |
US10177327B2 (en) | Method of manufacturing an organic light emitting display device including a flexible substrate and a bending area | |
KR101852190B1 (en) | Manufacturing method of flexible display | |
TWI583562B (en) | A fabrication method of a flexible electronic device | |
JP6136909B2 (en) | Manufacturing method of support substrate with resin layer, manufacturing method of glass laminate, manufacturing method of electronic device | |
JP6176067B2 (en) | GLASS LAMINATE AND ELECTRONIC DEVICE MANUFACTURING METHOD | |
US20160343963A1 (en) | Flexible oled display device and manufacturing method thereof | |
JP2013184346A (en) | Glass laminate, and method for producing electronic device | |
US20160118619A1 (en) | Preparation Method of Glass Film, Photoelectric Device and Packaging Method Thereof, Display Device | |
JP7136275B2 (en) | LAMINATED BODY, ELECTRONIC DEVICE MANUFACTURING METHOD, LAMINATED PRODUCTION METHOD | |
CN107644946A (en) | The method for packing and encapsulating structure of OLED display panel | |
JP2015093795A (en) | Method for producing glass laminate, and method for producing electronic device | |
KR102526047B1 (en) | Glass laminate and method for producing same | |
CN103531715B (en) | Flexible photoelectric device substrate, flexible photoelectric device and preparation method | |
CN104205041A (en) | Method for manufacturing flexible display substrate, and process film for manufacturing flexible display substrate | |
WO2013054792A1 (en) | Method for manufacturing electronic device with adherent resin layer | |
CN103745953A (en) | Manufacturing method of flexible OLED (organic light emitting diode) panel | |
US10707439B2 (en) | Packaging adhesive, packaging method, display panel and display device | |
KR101388294B1 (en) | Flexible Display Device and Manufacturing Method thereof | |
US10076030B2 (en) | Flexible hybrid substrate for display and method for manufacturing same | |
US9142807B2 (en) | Method for manufacturing flexible OLED (organic light emitting display) panel | |
US20190081277A1 (en) | Oled display panel packaging method | |
CN103995395B (en) | A kind of LCDs and manufacture method | |
CN112531131A (en) | Organic light emitting display panel and method of manufacturing the same | |
CN106356375A (en) | Substrate unit, component substrate, display device and manufacturing method of display device |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: INNOLUX CORPORATION, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNORS:WU, WEI-YEN;CHEN, YU-YAO;TZENG, JIUN-RU;AND OTHERS;REEL/FRAME:047641/0475 Effective date: 20160524 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: FINAL REJECTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |