CN102844859A - 用于将ic晶粒或晶片接合到tsv晶片的双载体 - Google Patents

用于将ic晶粒或晶片接合到tsv晶片的双载体 Download PDF

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Publication number
CN102844859A
CN102844859A CN2010800658302A CN201080065830A CN102844859A CN 102844859 A CN102844859 A CN 102844859A CN 2010800658302 A CN2010800658302 A CN 2010800658302A CN 201080065830 A CN201080065830 A CN 201080065830A CN 102844859 A CN102844859 A CN 102844859A
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China
Prior art keywords
tsv
wafer
crystal grain
die
outstanding
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CN2010800658302A
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English (en)
Chinese (zh)
Inventor
Y·高桥
M·穆尔图萨
R·邓恩
S·S·肖汉
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Texas Instruments Inc
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Texas Instruments Inc
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Publication of CN102844859A publication Critical patent/CN102844859A/zh
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    • H01—ELECTRIC ELEMENTS
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
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    • H01L2924/013—Alloys
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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CN2010800658302A 2010-01-26 2010-12-17 用于将ic晶粒或晶片接合到tsv晶片的双载体 Pending CN102844859A (zh)

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US12/694,012 US8017439B2 (en) 2010-01-26 2010-01-26 Dual carrier for joining IC die or wafers to TSV wafers
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CN108878465A (zh) * 2018-06-07 2018-11-23 复旦大学 基于背电极连接的cmos图像传感器及其制备方法
CN108878465B (zh) * 2018-06-07 2020-07-07 复旦大学 基于背电极连接的cmos图像传感器及其制备方法
CN114724967A (zh) * 2022-06-08 2022-07-08 江苏芯德半导体科技有限公司 一种具有tsv的异构芯片封装结构的封装方法

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