CN102843526B - 摄像设备及其控制方法 - Google Patents

摄像设备及其控制方法 Download PDF

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Publication number
CN102843526B
CN102843526B CN201210212680.4A CN201210212680A CN102843526B CN 102843526 B CN102843526 B CN 102843526B CN 201210212680 A CN201210212680 A CN 201210212680A CN 102843526 B CN102843526 B CN 102843526B
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CN
China
Prior art keywords
pixel
pixels
signal
output
photoelectric conversion
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Expired - Fee Related
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CN201210212680.4A
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English (en)
Chinese (zh)
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CN102843526A (zh
Inventor
石井美绘
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Canon Inc
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Canon Inc
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Publication of CN102843526A publication Critical patent/CN102843526A/zh
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Publication of CN102843526B publication Critical patent/CN102843526B/zh
Expired - Fee Related legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/40—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled
    • H04N25/46—Extracting pixel data from image sensors by controlling scanning circuits, e.g. by modifying the number of pixels sampled or to be sampled by combining or binning pixels
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/63—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to dark current
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/67—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response
    • H04N25/671—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction
    • H04N25/677—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to fixed-pattern noise, e.g. non-uniformity of response for non-uniformity detection or correction for reducing the column or line fixed pattern noise
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/60—Noise processing, e.g. detecting, correcting, reducing or removing noise
    • H04N25/68—Noise processing, e.g. detecting, correcting, reducing or removing noise applied to defects
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/75—Circuitry for providing, modifying or processing image signals from the pixel array
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/13—Active-matrix OLED [AMOLED] displays comprising photosensors that control luminance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/88—Dummy elements, i.e. elements having non-functional features

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201210212680.4A 2011-06-24 2012-06-21 摄像设备及其控制方法 Expired - Fee Related CN102843526B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011140970A JP5871496B2 (ja) 2011-06-24 2011-06-24 撮像装置及びその駆動方法
JP2011-140970 2011-06-24

Publications (2)

Publication Number Publication Date
CN102843526A CN102843526A (zh) 2012-12-26
CN102843526B true CN102843526B (zh) 2016-03-30

Family

ID=47361502

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210212680.4A Expired - Fee Related CN102843526B (zh) 2011-06-24 2012-06-21 摄像设备及其控制方法

Country Status (4)

Country Link
US (1) US8780236B2 (enExample)
JP (1) JP5871496B2 (enExample)
KR (1) KR101494243B1 (enExample)
CN (1) CN102843526B (enExample)

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* Cited by examiner, † Cited by third party
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JP2014209696A (ja) * 2012-07-23 2014-11-06 ソニー株式会社 固体撮像装置、信号読み出し方法、および電子機器
CN103137642B (zh) * 2013-03-21 2015-11-18 北京思比科微电子技术股份有限公司 Cmos图像传感器的像素单元及cmos图像传感器
KR20150014716A (ko) * 2013-07-30 2015-02-09 삼성전자주식회사 이미지 센서 및 그 구동 방법
JP6271926B2 (ja) * 2013-09-18 2018-01-31 キヤノン株式会社 撮像装置、その制御方法、及びプログラム
JP6229436B2 (ja) * 2013-10-31 2017-11-15 リコーイメージング株式会社 撮像装置および撮像方法
US10136079B2 (en) 2013-10-31 2018-11-20 Ricoh Imaging Company, Ltd. Method and apparatus for imaging an object
JP6324184B2 (ja) * 2014-04-18 2018-05-16 キヤノン株式会社 光電変換装置、撮像システム、および光電変換装置の駆動方法
JP6377947B2 (ja) 2014-04-21 2018-08-22 ルネサスエレクトロニクス株式会社 固体撮像素子および電子機器
FR3020735B1 (fr) * 2014-04-30 2017-09-15 Ulis Procede de traitement d'une image infrarouge pour une correction des non uniformites
JP6338440B2 (ja) * 2014-05-02 2018-06-06 キヤノン株式会社 撮像装置の駆動方法、撮像装置、撮像システム
JP6385126B2 (ja) * 2014-05-02 2018-09-05 キヤノン株式会社 固体撮像装置
US10009544B2 (en) * 2014-09-02 2018-06-26 Canon Kabushiki Kaisha Image capturing apparatus, control method of the same and image sensor
JP6765805B2 (ja) * 2015-11-24 2020-10-07 キヤノン株式会社 撮像装置の駆動方法、撮像装置、撮像システム
CN112804467B (zh) * 2021-04-15 2021-06-25 北京惠风智慧科技有限公司 一种基于多cmos传感器的图像编码方法及装置

Citations (2)

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CN101272453A (zh) * 2007-03-20 2008-09-24 索尼株式会社 拖尾校正信号发生电路、方法、程序、拖尾校正电路和成像器件
CN101662589A (zh) * 2008-08-27 2010-03-03 佳能株式会社 摄像设备及其控制方法

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JP2002016841A (ja) 2000-06-30 2002-01-18 Minolta Co Ltd 固体撮像装置
JP4497872B2 (ja) 2003-09-10 2010-07-07 キヤノン株式会社 撮像装置
JP2005101985A (ja) * 2003-09-25 2005-04-14 Sony Corp 固体撮像装置および画像入力装置
US7564489B1 (en) * 2005-02-18 2009-07-21 Crosstek Capital, LLC Method for reducing row noise with dark pixel data
EP1971129A1 (en) * 2007-03-16 2008-09-17 STMicroelectronics (Research & Development) Limited Improvements in or relating to image sensors
JP5300306B2 (ja) * 2007-05-31 2013-09-25 キヤノン株式会社 画像処理装置、その制御方法、及びプログラム
JP4424753B2 (ja) * 2007-12-28 2010-03-03 キヤノン株式会社 固体撮像装置及びその駆動方法
JP5053869B2 (ja) * 2008-01-10 2012-10-24 キヤノン株式会社 固体撮像装置、撮像システム、及び固体撮像装置の駆動方法
US8164657B2 (en) * 2008-06-27 2012-04-24 AltaSens, Inc Pixel or column fixed pattern noise mitigation using partial or full frame correction with uniform frame rates
JP5164719B2 (ja) 2008-07-29 2013-03-21 キヤノン株式会社 固体撮像装置
US7777171B2 (en) * 2008-08-26 2010-08-17 Eastman Kodak Company In-pixel summing of charge generated by two or more pixels having two reset transistors connected in series
US8130289B2 (en) * 2008-09-25 2012-03-06 Aptima Imaging Corporation System, method, and apparatus for correction of dark current error in semiconductor imaging devices
US8913166B2 (en) * 2009-01-21 2014-12-16 Canon Kabushiki Kaisha Solid-state imaging apparatus
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CN101662589A (zh) * 2008-08-27 2010-03-03 佳能株式会社 摄像设备及其控制方法

Also Published As

Publication number Publication date
JP2013009190A (ja) 2013-01-10
KR101494243B1 (ko) 2015-02-17
CN102843526A (zh) 2012-12-26
US8780236B2 (en) 2014-07-15
KR20130007432A (ko) 2013-01-18
US20120327280A1 (en) 2012-12-27
JP5871496B2 (ja) 2016-03-01

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