CN102804930A - 调节电感耦合等离子体处理系统中的电流比 - Google Patents

调节电感耦合等离子体处理系统中的电流比 Download PDF

Info

Publication number
CN102804930A
CN102804930A CN2010800262057A CN201080026205A CN102804930A CN 102804930 A CN102804930 A CN 102804930A CN 2010800262057 A CN2010800262057 A CN 2010800262057A CN 201080026205 A CN201080026205 A CN 201080026205A CN 102804930 A CN102804930 A CN 102804930A
Authority
CN
China
Prior art keywords
coil
current
inductor
processing system
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800262057A
Other languages
English (en)
Chinese (zh)
Inventor
龙茂林
赛义德·贾法·雅法良-特哈妮
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN102804930A publication Critical patent/CN102804930A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
CN2010800262057A 2009-06-12 2010-06-09 调节电感耦合等离子体处理系统中的电流比 Pending CN102804930A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18671009P 2009-06-12 2009-06-12
US61/186,710 2009-06-12
PCT/US2010/037942 WO2010144555A2 (en) 2009-06-12 2010-06-09 Adjusting current ratios in inductively coupled plasma processing systems

Publications (1)

Publication Number Publication Date
CN102804930A true CN102804930A (zh) 2012-11-28

Family

ID=43305377

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2010800262057A Pending CN102804930A (zh) 2009-06-12 2010-06-09 调节电感耦合等离子体处理系统中的电流比

Country Status (7)

Country Link
US (1) US9305750B2 (enExample)
JP (1) JP5643301B2 (enExample)
KR (1) KR101708075B1 (enExample)
CN (1) CN102804930A (enExample)
SG (2) SG176069A1 (enExample)
TW (1) TW201127224A (enExample)
WO (1) WO2010144555A2 (enExample)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104105329A (zh) * 2013-04-10 2014-10-15 Psk有限公司 电力供给装置和方法及利用该装置和方法的基板处理装置
CN104332379A (zh) * 2014-09-02 2015-02-04 清华大学 等离子体放电装置
CN108271307A (zh) * 2016-12-30 2018-07-10 中微半导体设备(上海)有限公司 电感耦合等离子体处理装置与等离子体产生装置
CN108882494A (zh) * 2017-05-08 2018-11-23 北京北方华创微电子装备有限公司 等离子体装置
CN111192752A (zh) * 2018-11-14 2020-05-22 江苏鲁汶仪器有限公司 一种功率分配电感耦合线圈及具有其的等离子体处理装置
WO2020103549A1 (zh) * 2018-11-20 2020-05-28 江苏鲁汶仪器有限公司 一种刻蚀均匀性调节装置及方法
CN111508810A (zh) * 2016-07-25 2020-08-07 朗姆研究公司 在多站中的晶片弯曲度的控制
CN113496863A (zh) * 2020-04-01 2021-10-12 吉佳蓝科技股份有限公司 等离子体天线模块

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8501631B2 (en) * 2009-11-19 2013-08-06 Lam Research Corporation Plasma processing system control based on RF voltage
WO2011102083A1 (ja) * 2010-02-19 2011-08-25 株式会社アルバック プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US10056231B2 (en) * 2011-04-28 2018-08-21 Lam Research Corporation TCCT match circuit for plasma etch chambers
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
KR102175081B1 (ko) * 2013-12-27 2020-11-06 세메스 주식회사 플라즈마 발생 장치 및 그를 포함하는 기판 처리 장치
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
US9515633B1 (en) * 2016-01-11 2016-12-06 Lam Research Corporation Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers
US9839109B1 (en) * 2016-05-30 2017-12-05 Applied Materials, Inc. Dynamic control band for RF plasma current ratio control
KR102644960B1 (ko) 2017-11-29 2024-03-07 코멧 테크놀로지스 유에스에이, 인크. 임피던스 매칭 네트워크 제어를 위한 리튜닝
US11114279B2 (en) * 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11107661B2 (en) 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology
WO2021041984A1 (en) 2019-08-28 2021-03-04 COMET Technologies USA, Inc. High power low frequency coils
US11342887B2 (en) * 2019-12-18 2022-05-24 Nxp Usa, Inc. Wideband RF power splitters and amplifiers including wideband RF power splitters
KR102147877B1 (ko) * 2020-04-01 2020-08-25 주식회사 기가레인 플라즈마 안테나 모듈
KR20230071629A (ko) * 2021-11-16 2023-05-23 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
US12087549B2 (en) 2021-12-30 2024-09-10 Mks Instruments, Inc. Demagnetizing coils for linearity improvement of current ratio of plasma processing systems

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US20020041160A1 (en) * 2000-04-06 2002-04-11 Applied Materials, Inc. Method for controlling etch uniformity
CN1520245A (zh) * 2002-12-31 2004-08-11 ��ķ�о����޹�˾ 等离子体处理器装置和方法，以及天线
CN1770238A (zh) * 2004-07-12 2006-05-10 应用材料股份有限公司 与等离子体腔室连接的固定的阻抗变换网络的装置和方法
JP2008078355A (ja) * 2006-09-21 2008-04-03 Mitsubishi Heavy Ind Ltd 薄膜製造装置及び太陽電池の製造方法
WO2008143420A1 (en) * 2007-05-21 2008-11-27 Nest Corp. Method and apparatus for multi-mode plasma generation
CN101440484A (zh) * 2007-11-21 2009-05-27 东京毅力科创株式会社 感应耦合等离子体处理装置和等离子体处理方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW293983B (enExample) * 1993-12-17 1996-12-21 Tokyo Electron Co Ltd
US6054013A (en) 1996-02-02 2000-04-25 Applied Materials, Inc. Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density
EP1039569B1 (en) 1997-11-10 2009-01-14 Nippon Zeon Co., Ltd. Binder containing vinyl alcohol polymer, slurry, electrode, and secondary battery with nonaqueous electrolyte
US6326597B1 (en) * 1999-04-15 2001-12-04 Applied Materials, Inc. Temperature control system for process chamber
KR100338057B1 (ko) * 1999-08-26 2002-05-24 황 철 주 유도 결합형 플라즈마 발생용 안테나 장치
JP2003100723A (ja) 2001-09-27 2003-04-04 Tokyo Electron Ltd 誘導結合プラズマ処理装置
KR101144018B1 (ko) * 2004-05-28 2012-05-09 램 리써치 코포레이션 복수 ｒｆ 주파수에 반응하는 전극을 갖는 플라즈마 처리기
KR100898165B1 (ko) 2006-11-24 2009-05-19 엘지전자 주식회사 플라즈마 발생장치 및 방법

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5907221A (en) * 1995-08-16 1999-05-25 Applied Materials, Inc. Inductively coupled plasma reactor with an inductive coil antenna having independent loops
US20020041160A1 (en) * 2000-04-06 2002-04-11 Applied Materials, Inc. Method for controlling etch uniformity
CN1520245A (zh) * 2002-12-31 2004-08-11 ��ķ�о����޹�˾ 等离子体处理器装置和方法，以及天线
CN1770238A (zh) * 2004-07-12 2006-05-10 应用材料股份有限公司 与等离子体腔室连接的固定的阻抗变换网络的装置和方法
JP2008078355A (ja) * 2006-09-21 2008-04-03 Mitsubishi Heavy Ind Ltd 薄膜製造装置及び太陽電池の製造方法
WO2008143420A1 (en) * 2007-05-21 2008-11-27 Nest Corp. Method and apparatus for multi-mode plasma generation
CN101440484A (zh) * 2007-11-21 2009-05-27 东京毅力科创株式会社 感应耦合等离子体处理装置和等离子体处理方法

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104105329A (zh) * 2013-04-10 2014-10-15 Psk有限公司 电力供给装置和方法及利用该装置和方法的基板处理装置
CN104332379A (zh) * 2014-09-02 2015-02-04 清华大学 等离子体放电装置
CN111508810A (zh) * 2016-07-25 2020-08-07 朗姆研究公司 在多站中的晶片弯曲度的控制
CN111508810B (zh) * 2016-07-25 2023-08-08 朗姆研究公司 在多站中的晶片弯曲度的控制
CN108271307A (zh) * 2016-12-30 2018-07-10 中微半导体设备(上海)有限公司 电感耦合等离子体处理装置与等离子体产生装置
CN108882494A (zh) * 2017-05-08 2018-11-23 北京北方华创微电子装备有限公司 等离子体装置
CN111192752A (zh) * 2018-11-14 2020-05-22 江苏鲁汶仪器有限公司 一种功率分配电感耦合线圈及具有其的等离子体处理装置
CN111192752B (zh) * 2018-11-14 2021-08-31 江苏鲁汶仪器有限公司 一种功率分配电感耦合线圈及具有其的等离子体处理装置
WO2020103549A1 (zh) * 2018-11-20 2020-05-28 江苏鲁汶仪器有限公司 一种刻蚀均匀性调节装置及方法
US12027345B2 (en) 2018-11-20 2024-07-02 Jiangsu Leuven Instruments Co. Ltd Etching uniformity regulating device and method
CN113496863A (zh) * 2020-04-01 2021-10-12 吉佳蓝科技股份有限公司 等离子体天线模块
CN113496863B (zh) * 2020-04-01 2022-04-12 吉佳蓝科技股份有限公司 等离子体天线模块

Also Published As

Publication number Publication date
US20100314048A1 (en) 2010-12-16
WO2010144555A3 (en) 2011-02-24
US9305750B2 (en) 2016-04-05
JP5643301B2 (ja) 2014-12-17
KR20120028916A (ko) 2012-03-23
KR101708075B1 (ko) 2017-02-17
SG10201402467SA (en) 2014-09-26
SG176069A1 (en) 2011-12-29
JP2012529750A (ja) 2012-11-22
WO2010144555A2 (en) 2010-12-16
TW201127224A (en) 2011-08-01

Similar Documents

Publication Publication Date Title
CN102804930A (zh) 调节电感耦合等离子体处理系统中的电流比
US9530619B2 (en) Plasma processing apparatus and filter unit
JP4750879B2 (ja) プラズマ発生装置
JP4286404B2 (ja) 整合器およびプラズマ処理装置
JP5907652B2 (ja) プラズマ処理装置
JP5851682B2 (ja) プラズマ処理装置
JP6172607B2 (ja) 無線電力伝送装置
JP2007157696A (ja) プラズマリアクタ内のイオン密度、イオンエネルギー分布及びイオン解離の独立した制御
JP2006524422A (ja) プラズマ発生装置、方法、および調整可能デューティサイクルを有するｒｆ駆動回路
KR102745695B1 (ko) 인덕터, 인덕터를 갖춘 장치 및 인덕터의 제조 방법
TW200534533A (en) Plasma antenna
KR102056724B1 (ko) 플라스마 처리 장치
US20230134296A1 (en) Transformer Isolator Having RF Shield Structure for Effective Magnetic Power Transfer
CN107369604A (zh) 反应腔室及半导体加工设备
TW200302682A (en) Plasma processing apparatus capable of performing uniform plasma treatment by preventing drift in plasma discharge current
JP6108310B2 (ja) 無線電力伝送装置
JP2002124399A (ja) プラズマ生成装置
JP5595136B2 (ja) 誘導結合プラズマ発生装置
KR101286710B1 (ko) 유도결합 플라즈마 기판 처리 장치 및 방법
KR20170019321A (ko) 선단 에지 제어를 위한 자화된 에지 링
US20240038497A1 (en) Compound helical inductor coil
JP3980786B2 (ja) ジャイロトロン用超電導磁石
TW202524543A (zh) 基板處理設備及電漿產生單元
TW202203712A (zh) 等離子體處理裝置中的加熱裝置及抗射頻干擾方法
JP2006140534A (ja) 給電アンテナ及びこれを有する半導体製造装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20121128