WO2008143420A1 - Method and apparatus for multi-mode plasma generation - Google Patents

Method and apparatus for multi-mode plasma generation Download PDF

Info

Publication number
WO2008143420A1
WO2008143420A1 PCT/KR2008/002676 KR2008002676W WO2008143420A1 WO 2008143420 A1 WO2008143420 A1 WO 2008143420A1 KR 2008002676 W KR2008002676 W KR 2008002676W WO 2008143420 A1 WO2008143420 A1 WO 2008143420A1
Authority
WO
WIPO (PCT)
Prior art keywords
plasma
plasma chamber
source coil
areas
chamber
Prior art date
Application number
PCT/KR2008/002676
Other languages
French (fr)
Inventor
Young Kim
Original Assignee
Nest Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nest Corp. filed Critical Nest Corp.
Publication of WO2008143420A1 publication Critical patent/WO2008143420A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H01J37/32155—Frequency modulation
    • H01J37/32165—Plural frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a method and an apparatus for manufacturing a semiconductor, and more particularly to a method for generating multi-mode plasma and a plasma chamber to which the method is implemented.
  • the plasma chamber is semiconductor manufacturing equipment for forming plasma in the interior thereof, and performing an etching process, a deposition process, etc. by using the plasma.
  • Such plasma chambers are classified with sources of various types, such as Electron Cyclotron Resonance (ECR) plasma sources, Helicon- Wave Excited Plasma (HWEP) sources, Capacitively Coupled Plasma (CCP) sources, Inductively Coupled Plasma (ICP) sources, etc. according to a plasma generating source.
  • ECR Electron Cyclotron Resonance
  • HWEP Helicon- Wave Excited Plasma
  • CCP Capacitively Coupled Plasma
  • ICP Inductively Coupled Plasma
  • FIG. 1 is a schematic sectional view of a plasma chamber including a conventional
  • FIG. 2 is a plane view of the ACP source shown in FIG. 1.
  • a plasma chamber 100 has a reacting space 104 limited to a predetermined size by an outer wall 102 of the plasma chamber and a dome 112.
  • Plasma 110 is formed in a predetermined area of the reacting space 104 under a predetermined condition.
  • the reacting space 104 is opened at a lower part of the plasma chamber 100, this illustration is for simplifying the drawing.
  • the lower part of the plasma chamber 100 is also isolated from the outside so that the interior of the plasma chamber 100 can be maintained in a vacuum state.
  • a wafer supporter (or an electrostatic chuck) 106 is arranged at the lower part of the plasma chamber 100.
  • a semiconductor wafer 108 to be processed is safely seated on an upper surface of the wafer supporter 106.
  • the wafer supporter 106 is connected with an RF bias power supply 116 positioned at the outside thereof.
  • a heater can be arranged within the wafer supporter 106.
  • a plasma source 200 for forming plasma 110 is arranged at an outer surface of the dome 112.
  • a plurality of unit coils such as four coils of first, second, third, and fourth unit coils 131, 132, 133, and 134, and a bushing 120 are included in the plasma source 200.
  • the bushing 120 is positioned at a center of the plasma source, and the first, second, third, and fourth unit coils 131, 132, 133, and 134 extend from the bushing 120 so as to wind around the bushing 120 while having a spiral shape.
  • the number of unit coils in the illustration is limited to four, the number thereof can be more or less than four.
  • a supporting bar 140 which protrudes toward a direction perpendicular to the upper surface of the bushing 120, is arranged at the center of the bushing 120.
  • the supporting bar 140 is connected to one node of the RF power supply 114.
  • the other node of the RF power 114 is grounded.
  • Such a conventional plasma source coil 200 has a circular structure where coils extend from the bushing 120 so as to wind around the bushing 120. According to such circular structure, the intensity of a magnetic field is obtained by equation (1) below. [6]
  • Equation (1) B is magnetic flux density, V is a del operator, and E is the intensity of an electric field.
  • the present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a method for controlling plasma density distribution at any area including a central part and en edge of a plasma chamber so as to obtain desired a critical dimension (CD) and an etching profile, and a plasma chamber to which the method is implemented.
  • CD critical dimension
  • a method for generating plasma in a plasma chamber having a plasma source coil formed at an upper part of the plasma chamber including the steps of: (a) dividing an upper surface of the plasma chamber into a plurality of areas; and (b) controlling frequency generated from each corresponding part of the plasma source coil according to desired etching profile, each part being positioned at each divided area of the upper surface of the plasma chamber.
  • Step (b) includes the steps of: forming variable capacitors in parallel at parts of the plasma source coil, which correspond to the areas, respectively; and varying capacity of each variable capacitor.
  • a plasma chamber including a plasma source coil formed at an upper part of the plasma chamber, in which variable capacitors are connected with at least one part of the plasma source coil in parallel.
  • the variable capacitors divide an upper surface of the plasma chamber into a plurality of areas and are connected with each corresponding part of the plasma source coil, which is positioned at each divided area, in parallel.
  • FIG. 1 is a schematic sectional view of a plasma chamber including a conventional
  • FIG. 2 is a plane view of the ACP source of FIG. 1 ;
  • FIG. 3 is a circuit diagram of a plasma chamber, to which a method for generating multi-mode plasma is implemented according to an embodiment of the present invention.
  • FIGs. 4 to 10 are graphs showing embodiments of operations of the present invention. Mode for the Invention
  • FIG. 3 is a circuit diagram of a plasma chamber, to which a method for generating multi-mode plasma is implemented according to an embodiment of the present invention. Same elements of this drawing, as elements of FIGs. 1 and2, will be designated by the same reference numerals.
  • source coils 131, 132, and 133 is divided into an inner area 310 and an outer area 320.
  • Variable capacitors Cl, C2, and C3 are connected with inductors Ll, L2, and L3, which are formed at the outer area 320, in parallel.
  • the source coils 131, 132, and 133 of the inner area 320 are same as conventional coils of FIGs. 1 and 2.
  • the inductors Ll, L2, and L3 and the variable capacitors Cl, C2, and C3 are controlled, plasma density of a central area and an edge area of the plasma chamber, which correspond to the inner area 310 and the outer area 320, respectively, can be controlled. That is, it is possible to control plasma density of the edge area of the plasma chamber to be higher or lower in comparison with plasma density of the central area of the plasma chamber in such a manner that each capacity of capacitors Cl, C2, and C3, varies.
  • the etching rate of an edge of the plasma chamber is higher than the etching rate of the center thereof. Therefore, if plasma density is controlled to have a frequency property M2 of FIG. 5, which corresponds to Ml, in such a manner that the inductors Ll, L2, and L3 and capacities of the capacitors Cl, C2, and C3 are varied, the plasma density of the center of the plasma chamber is higher than the plasma density of the edge thereof. As a result, it is possible to obtain uniform etching rates of the edge and the center, such as an etching rate profile designated by reference numeral 510.
  • an upper surface of the plasma chamber is divided into a plurality of areas, that is, area I, area II, and area III, and each level of frequencies ⁇ l, 0)2, and ⁇ 3, which are generated from parts of the plasma source coil, respectively, which correspond to divided areas I, II, and III, is controlled according to desired etching profile, it is possible to control the plasma density distribution to be changed in each area I, II, and III.
  • Such multi-mode plasma density distribution control can be implemented in such a manner that variable capacitors are formed in parallel at the parts of the plasma source coil, which correspond to areas I, II, and III, respectively, and capacity of each variable capacitor is varied so as to control the lever of each frequencies ⁇ l, ⁇ 2, and ⁇ 3.
  • the relation between levels of frequencies of areas I, II, and III is ⁇ l ⁇ 2 ⁇ 3. Therefore, according to the relation between frequencies of ⁇ l ⁇ ⁇ 2 ⁇ 3, the relation between plasma density distributions Ni of areas I, II, and III is the same as I ⁇ II ⁇ III. As a result, the etching profile shown in FIG. 9 is obtained.
  • the relation between levels of frequencies of areas I, II, and III is ⁇ 3 ⁇ l ⁇ 2. Therefore, according to the relation between frequencies of ⁇ 3 ⁇ l ⁇ 0)2, the relation between plasma density distributions Ni of areas I, II, and III is the same as III ⁇ I ⁇ II. As a result, the etching profile shown in FIG. 10 is obtained.
  • Te is a
  • n density of an electron
  • ⁇ permittivity within a o vacuum
  • e is a unit electron. Therefore, plasma density n is denoted as n oc 1/ ⁇ [27] ⁇ is in inverse proportion to pressure of the camber so that the relation is denoted as n e oc p . Also, frequency effect has a relation similar to the pressure of the chamber so that the relation is denoted as p oc ⁇ .

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Electromagnetism (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)

Abstract

Disclosed is a method for generating multi-mode plasma for manufacturing a semiconductor and a plasma chamber to which the method is implemented. The method includes the steps of (a) dividing an upper surface of the plasma chamber into a plurality of areas; and (b) controlling a frequency generated from each corresponding part of the plasma source coil, which is positioned at each divided area according to desired etching profile, and step (b) includes the steps of forming variable capacitors in parallel at parts of the plasma source coil, which correspond to the areas, respectively; and varying the capacity of each variable capacitor. Therefore, it is possible to improve whole etching rate, maintain uniformity of whole etching rate, obtaining uniformity of CD, partially controlling etching rate, etc.

Description

Description
METHOD AND APPARATUS FOR MULTI-MODE PLASMA
GENERATION
Technical Field
[1] The present invention relates to a method and an apparatus for manufacturing a semiconductor, and more particularly to a method for generating multi-mode plasma and a plasma chamber to which the method is implemented. Background Art
[2] Techniques for manufacturing Ultra-Large Scale Integrated (ULSI) circuit elements have been remarkably developed for 20 years. This remarkable development has been achieved due to equipment for manufacturing semiconductors, which can support process techniques requiring cutting-edge technologies. A plasma chamber as one of the equipment for manufacturing semiconductors is used in a depositing process, etc., in addition to an etching process as a typical process in which the plasma chamber has been used. Therefore, the application range of the plasma chamber has been gradually enlarged.
[3] The plasma chamber is semiconductor manufacturing equipment for forming plasma in the interior thereof, and performing an etching process, a deposition process, etc. by using the plasma. Such plasma chambers are classified with sources of various types, such as Electron Cyclotron Resonance (ECR) plasma sources, Helicon- Wave Excited Plasma (HWEP) sources, Capacitively Coupled Plasma (CCP) sources, Inductively Coupled Plasma (ICP) sources, etc. according to a plasma generating source. Adaptively Coupled Plasma(ACP) sources, which have an advantage over the Capacitively Coupled Plasma (CCP) sources, as well as an advantage over the Inductively Coupled Plasma (ICP) sources, have recently been suggested.
[4] FIG. 1 is a schematic sectional view of a plasma chamber including a conventional
ACP source, and FIG. 2 is a plane view of the ACP source shown in FIG. 1.
[5] With reference to FIGs. 1 and 2, a plasma chamber 100 has a reacting space 104 limited to a predetermined size by an outer wall 102 of the plasma chamber and a dome 112. Plasma 110 is formed in a predetermined area of the reacting space 104 under a predetermined condition. Although it is illustrated that the reacting space 104 is opened at a lower part of the plasma chamber 100, this illustration is for simplifying the drawing. In actual fact, the lower part of the plasma chamber 100 is also isolated from the outside so that the interior of the plasma chamber 100 can be maintained in a vacuum state. A wafer supporter (or an electrostatic chuck) 106 is arranged at the lower part of the plasma chamber 100. A semiconductor wafer 108 to be processed is safely seated on an upper surface of the wafer supporter 106. The wafer supporter 106 is connected with an RF bias power supply 116 positioned at the outside thereof. Although not shown in the drawings, a heater can be arranged within the wafer supporter 106. A plasma source 200 for forming plasma 110 is arranged at an outer surface of the dome 112. As shown in FIG. 2, a plurality of unit coils, such as four coils of first, second, third, and fourth unit coils 131, 132, 133, and 134, and a bushing 120 are included in the plasma source 200. In detail, the bushing 120 is positioned at a center of the plasma source, and the first, second, third, and fourth unit coils 131, 132, 133, and 134 extend from the bushing 120 so as to wind around the bushing 120 while having a spiral shape. Although the number of unit coils in the illustration is limited to four, the number thereof can be more or less than four. A supporting bar 140, which protrudes toward a direction perpendicular to the upper surface of the bushing 120, is arranged at the center of the bushing 120. The supporting bar 140 is connected to one node of the RF power supply 114. The other node of the RF power 114 is grounded. Power from the RF power supply 114 is supplied to the first, second, third, and fourth unit coils 131, 132, 133, and 134 through the supporting bar 140 and the bushing. Such a conventional plasma source coil 200 has a circular structure where coils extend from the bushing 120 so as to wind around the bushing 120. According to such circular structure, the intensity of a magnetic field is obtained by equation (1) below. [6]
™ ΘB at = - v χ E
...(1)
[8] In equation (1), B is magnetic flux density, V is a del operator, and E is the intensity of an electric field.
[9] A magnetic field formed according to Maxwell's equation is applied to most plasma source coils having a circular structure. Magnetic declination is generated in a radial direction within the range from the center of the plasma source coil to the periphery thereof. As a result, there is a disadvantage in that it is not easy to control a critical dimension (CD) and obtain uniformity of etch rate at the center and the periphery of the plasma source coil. Disclosure of Invention Technical Solution
[10] Therefore, the present invention has been made in view of the above-mentioned problems, and it is an object of the present invention to provide a method for controlling plasma density distribution at any area including a central part and en edge of a plasma chamber so as to obtain desired a critical dimension (CD) and an etching profile, and a plasma chamber to which the method is implemented.
[11] According to an aspect of the present invention, there is provided a method for generating plasma in a plasma chamber having a plasma source coil formed at an upper part of the plasma chamber; the method including the steps of: (a) dividing an upper surface of the plasma chamber into a plurality of areas; and (b) controlling frequency generated from each corresponding part of the plasma source coil according to desired etching profile, each part being positioned at each divided area of the upper surface of the plasma chamber. Step (b) includes the steps of: forming variable capacitors in parallel at parts of the plasma source coil, which correspond to the areas, respectively; and varying capacity of each variable capacitor.
[12] According to another aspect of the present invention, there is provided a plasma chamber including a plasma source coil formed at an upper part of the plasma chamber, in which variable capacitors are connected with at least one part of the plasma source coil in parallel. The variable capacitors divide an upper surface of the plasma chamber into a plurality of areas and are connected with each corresponding part of the plasma source coil, which is positioned at each divided area, in parallel. Brief Description of the Drawings
[13] FIG. 1 is a schematic sectional view of a plasma chamber including a conventional
ACP source;
[14] FIG. 2 is a plane view of the ACP source of FIG. 1 ;
[15] FIG. 3 is a circuit diagram of a plasma chamber, to which a method for generating multi-mode plasma is implemented according to an embodiment of the present invention; and
[16] FIGs. 4 to 10 are graphs showing embodiments of operations of the present invention. Mode for the Invention
[17] Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings. In the following description, the same elements will be designated by the same reference numerals although they are shown in different drawings. Further, in the following description of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the subject matter of the present invention rather unclear.
[18] FIG. 3 is a circuit diagram of a plasma chamber, to which a method for generating multi-mode plasma is implemented according to an embodiment of the present invention. Same elements of this drawing, as elements of FIGs. 1 and2, will be designated by the same reference numerals. [19] As shown in FIG. 3, source coils 131, 132, and 133 is divided into an inner area 310 and an outer area 320. Variable capacitors Cl, C2, and C3 are connected with inductors Ll, L2, and L3, which are formed at the outer area 320, in parallel. The source coils 131, 132, and 133 of the inner area 320 are same as conventional coils of FIGs. 1 and 2. According to the present invention, if the inductors Ll, L2, and L3 and the variable capacitors Cl, C2, and C3 are controlled, plasma density of a central area and an edge area of the plasma chamber, which correspond to the inner area 310 and the outer area 320, respectively, can be controlled. That is, it is possible to control plasma density of the edge area of the plasma chamber to be higher or lower in comparison with plasma density of the central area of the plasma chamber in such a manner that each capacity of capacitors Cl, C2, and C3, varies.
[20] Subsequently, embodiments of operations of the present invention will be described.
In general, in a case where plasma density has a frequency property such an Ml of FIG. 4, the etching rate of an edge of the plasma chamber is higher than the etching rate of the center thereof. Therefore, if plasma density is controlled to have a frequency property M2 of FIG. 5, which corresponds to Ml, in such a manner that the inductors Ll, L2, and L3 and capacities of the capacitors Cl, C2, and C3 are varied, the plasma density of the center of the plasma chamber is higher than the plasma density of the edge thereof. As a result, it is possible to obtain uniform etching rates of the edge and the center, such as an etching rate profile designated by reference numeral 510.
[21] According to another embodiment, if capacities of the capacitors Cl, C2, and C3 are varied according to the present invention so that plasma density is controlled to have a frequency property, such as M3 of FIG. 6, in which plasma density of the center of the plasma chamber is lower in comparison with Ml and plasma density of the edge thereof is higher in comparison with Ml, plasma density of the edge of the plasma chamber is higher than plasma density of the center thereof. As a result, etching rate of the edge is much higher than etching rate of the edge, such as the etching rate profile designated by reference numeral 610.
[22] According to another embodiment, as embodiments shown in FIGs. 5 and 6, a case where dual-mode plasma density distribution is generated and various multi-mode plasma density distribution is generated will be described below.
[23] As shown in FIGs. 7 and 8, if an upper surface of the plasma chamber is divided into a plurality of areas, that is, area I, area II, and area III, and each level of frequencies ωl, 0)2, and ω3, which are generated from parts of the plasma source coil, respectively, which correspond to divided areas I, II, and III, is controlled according to desired etching profile, it is possible to control the plasma density distribution to be changed in each area I, II, and III. Such multi-mode plasma density distribution control can be implemented in such a manner that variable capacitors are formed in parallel at the parts of the plasma source coil, which correspond to areas I, II, and III, respectively, and capacity of each variable capacitor is varied so as to control the lever of each frequencies ωl, ω2, and ω3.
[24] In the embodiment of FIG. 7, the relation between levels of frequencies of areas I, II, and III is ωl<ω2<ω3. Therefore, according to the relation between frequencies of ωl< ω2<ω3, the relation between plasma density distributions Ni of areas I, II, and III is the same as I<II<III. As a result, the etching profile shown in FIG. 9 is obtained. In the embodiment of FIG. 8, the relation between levels of frequencies of areas I, II, and III is ω3<ωl<ω2. Therefore, according to the relation between frequencies of ω3<ωl< 0)2, the relation between plasma density distributions Ni of areas I, II, and III is the same as III<I<II. As a result, the etching profile shown in FIG. 10 is obtained.
[25] Then, the relation between plasma density and frequency will be described.
[26] A Debye distance λ is denoted as λ = (ε T /en ) ~ 743(T /n ) . Herein, Te is a
J De De 0 e 0 e e temperature of an electron, n is density of an electron, ε is permittivity within a o vacuum, and e is a unit electron. Therefore, plasma density n is denoted as n oc 1/λ [27] λ is in inverse proportion to pressure of the camber so that the relation is denoted as n e oc p . Also, frequency effect has a relation similar to the pressure of the chamber so that the relation is denoted as p oc ω.
[28] As a result, the relation between an electron and ion plasma frequency is denoted as n i =n e =n o ocp ocω so that plasma density can be changed by controlling frequency.
Although exemplary embodiments of the present invention have been described for illustrative purposes, those skilled in the art will appreciate that various modifications, additions and substitutions are possible, without departing from the scope and spirit of the invention. Therefore, an exemplary embodiment of the present invention has not been described for limiting purposes so that the scope and spirit of the invention may not limited by the exemplary embodiment thereof. Accordingly, the scope of the invention is not to be limited by the above embodiments but by the claims and the equivalents thereof. Industrial Applicability
[29] As described above, according to the method for generating multi-mode plasma and a plasma chamber, to which the method is implemented, It is possible to improve whole etching rate, maintain uniformity of whole etching rate, obtaining uniformity of CD, partially controlling etching rate, etc. Therefore, plasma density distribution at any area including the central part and the edge of the plasma chamber can be controlled so that desired a critical dimension (CD) and an etching profile can be obtained. The present invention can be applied to any plasma chamber including plasma source.

Claims

Claims
[1] A method for generating plasma in a plasma chamber having a plasma source coil formed at an upper part of the plasma chamber; the method comprising the steps of:
(a) dividing an upper surface of the plasma chamber into a plurality of areas; and
(b) controlling frequency generated from each corresponding part of the plasma source coil according to desired etching profile, each part being positioned at each divided area of the upper surface of the plasma chamber.
[2] The method for generating plasma as claimed in claim 1, wherein step (b) comprises the steps of:
(bl)forming variable capacitors in parallel at parts of the plasma source coil, which correspond to the areas, respectively; and
(b2)varying capacity of each variable capacitor. [3] A plasma chamber including a plasma source coil formed at an upper part of the plasma chamber, in which variable capacitors are connected with at least one part of the plasma source coil in parallel. [4] The plasma chamber as claimed in claim 3, wherein the variable capacitors divide an upper surface of the plasma chamber into a plurality of areas and are connected with each corresponding part of the plasma source coil, which is positioned at each divided area, in parallel.
PCT/KR2008/002676 2007-05-21 2008-05-14 Method and apparatus for multi-mode plasma generation WO2008143420A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070049273A KR20080102615A (en) 2007-05-21 2007-05-21 Method and apparatus for multi-mode plasma generation
KR10-2007-0049273 2007-05-21

Publications (1)

Publication Number Publication Date
WO2008143420A1 true WO2008143420A1 (en) 2008-11-27

Family

ID=40032081

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2008/002676 WO2008143420A1 (en) 2007-05-21 2008-05-14 Method and apparatus for multi-mode plasma generation

Country Status (2)

Country Link
KR (1) KR20080102615A (en)
WO (1) WO2008143420A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102804930A (en) * 2009-06-12 2012-11-28 朗姆研究公司 Adjusting current ratios in inductively coupled plasma processing systems

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101123004B1 (en) * 2009-09-18 2012-03-12 주성엔지니어링(주) Plasma processing apparatus

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148476A (en) * 1994-11-17 1996-06-07 Sony Corp Plasma etching cvd device
KR20040108130A (en) * 2003-06-16 2004-12-23 삼성전자주식회사 apparatus for forming plasma
KR20050007624A (en) * 2003-07-11 2005-01-21 주성엔지니어링(주) Apparatus for generating inductively coupled plasma having high plasma uniformity, and method of controlling plasma uniformity thereof
KR20050008960A (en) * 2003-07-14 2005-01-24 주성엔지니어링(주) Apparatus of hybrid coupled plasma

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08148476A (en) * 1994-11-17 1996-06-07 Sony Corp Plasma etching cvd device
KR20040108130A (en) * 2003-06-16 2004-12-23 삼성전자주식회사 apparatus for forming plasma
KR20050007624A (en) * 2003-07-11 2005-01-21 주성엔지니어링(주) Apparatus for generating inductively coupled plasma having high plasma uniformity, and method of controlling plasma uniformity thereof
KR20050008960A (en) * 2003-07-14 2005-01-24 주성엔지니어링(주) Apparatus of hybrid coupled plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102804930A (en) * 2009-06-12 2012-11-28 朗姆研究公司 Adjusting current ratios in inductively coupled plasma processing systems

Also Published As

Publication number Publication date
KR20080102615A (en) 2008-11-26

Similar Documents

Publication Publication Date Title
US9385021B2 (en) Electronic knob for tuning radial etch non-uniformity at VHF frequencies
KR102033873B1 (en) Plasma processing apparatus
CN103367206B (en) The many RF impedances control tuned for plasma uniformity
EP1573795B1 (en) A system and method for controlling plasma with an adjustable coupling to ground circuit
JP5749020B2 (en) Apparatus for coupling RF power to a plasma chamber
TWI448212B (en) Apparatus and method for plasma processing
JP6715129B2 (en) Plasma processing device
JP2010238981A (en) Plasma processing apparatus
WO2014068974A1 (en) Plasma processing method
KR101998520B1 (en) Plasma processing apparatus and plasma generating unit
US11257660B2 (en) Apparatus and method for treating substrate
KR20160010254A (en) Apparatus for treating substrate and filter manufacturing method
JP2010515232A (en) Electric field reduction device for plasma containment
WO2008143420A1 (en) Method and apparatus for multi-mode plasma generation
WO2013078152A1 (en) Peripheral rf feed and symmetric rf return with rf strap input
TW202139786A (en) Apparatus and methods for manipulating power at an edge ring in a plasma processing device
KR20050049169A (en) System for generating inductively coupled plasma and antenna coil structure for generating inductive electric field
KR101040541B1 (en) Hybrid antenna for plasma
US20100282597A1 (en) Method for controlling plasma density distribution in plasma chamber
KR100404723B1 (en) Device for Generating Inductively Coupled Plasma with Lower Aspect Ratio
KR100527837B1 (en) Plasma source and plsama chamber for uniform distribution of plasma
KR100584120B1 (en) Plasma source coil and plasma chamber using the same
JP2000315598A (en) Plasma processing device
WO2008140247A1 (en) Hybridly coupled plasma source and plasma chamber using the same
KR20040021809A (en) Inductively coupled plasma generating apparatus having antenna with different cross sections

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08753472

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08753472

Country of ref document: EP

Kind code of ref document: A1