KR101708075B1 - 유도 결합 플라즈마 처리 시스템에서의 전류 비율 조정 - Google Patents

유도 결합 플라즈마 처리 시스템에서의 전류 비율 조정 Download PDF

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KR101708075B1
KR101708075B1 KR1020117029647A KR20117029647A KR101708075B1 KR 101708075 B1 KR101708075 B1 KR 101708075B1 KR 1020117029647 A KR1020117029647 A KR 1020117029647A KR 20117029647 A KR20117029647 A KR 20117029647A KR 101708075 B1 KR101708075 B1 KR 101708075B1
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coil
current
inductor
parallel
amount
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KR20120028916A (ko
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마오린 롱
세예드 자파르 자파리안-테라니
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램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32715—Workpiece holder
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32174—Circuits specially adapted for controlling the RF discharge
    • H01J37/32183—Matching circuits

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020117029647A 2009-06-12 2010-06-09 유도 결합 플라즈마 처리 시스템에서의 전류 비율 조정 Active KR101708075B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US18671009P 2009-06-12 2009-06-12
US61/186,710 2009-06-12
PCT/US2010/037942 WO2010144555A2 (en) 2009-06-12 2010-06-09 Adjusting current ratios in inductively coupled plasma processing systems

Publications (2)

Publication Number Publication Date
KR20120028916A KR20120028916A (ko) 2012-03-23
KR101708075B1 true KR101708075B1 (ko) 2017-02-17

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KR1020117029647A Active KR101708075B1 (ko) 2009-06-12 2010-06-09 유도 결합 플라즈마 처리 시스템에서의 전류 비율 조정

Country Status (7)

Country Link
US (1) US9305750B2 (enExample)
JP (1) JP5643301B2 (enExample)
KR (1) KR101708075B1 (enExample)
CN (1) CN102804930A (enExample)
SG (2) SG176069A1 (enExample)
TW (1) TW201127224A (enExample)
WO (1) WO2010144555A2 (enExample)

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WO2011102083A1 (ja) * 2010-02-19 2011-08-25 株式会社アルバック プラズマ処理装置及びプラズマ処理方法
JP5781349B2 (ja) * 2011-03-30 2015-09-24 東京エレクトロン株式会社 プラズマ処理装置
US10056231B2 (en) * 2011-04-28 2018-08-21 Lam Research Corporation TCCT match circuit for plasma etch chambers
US9462672B2 (en) 2012-02-22 2016-10-04 Lam Research Corporation Adjustment of power and frequency based on three or more states
US9320126B2 (en) 2012-12-17 2016-04-19 Lam Research Corporation Determining a value of a variable on an RF transmission model
US10157729B2 (en) 2012-02-22 2018-12-18 Lam Research Corporation Soft pulsing
US9197196B2 (en) 2012-02-22 2015-11-24 Lam Research Corporation State-based adjustment of power and frequency
US9114666B2 (en) 2012-02-22 2015-08-25 Lam Research Corporation Methods and apparatus for controlling plasma in a plasma processing system
US10128090B2 (en) 2012-02-22 2018-11-13 Lam Research Corporation RF impedance model based fault detection
US9842725B2 (en) 2013-01-31 2017-12-12 Lam Research Corporation Using modeling to determine ion energy associated with a plasma system
CN103060778B (zh) * 2013-01-23 2015-03-11 深圳市劲拓自动化设备股份有限公司 平板式pecvd装置
KR20140122548A (ko) * 2013-04-10 2014-10-20 피에스케이 주식회사 전력 공급 장치, 전력 공급 방법, 그리고 그를 이용한 기판 처리 장치
KR102175081B1 (ko) * 2013-12-27 2020-11-06 세메스 주식회사 플라즈마 발생 장치 및 그를 포함하는 기판 처리 장치
US9594105B2 (en) 2014-01-10 2017-03-14 Lam Research Corporation Cable power loss determination for virtual metrology
US10950421B2 (en) 2014-04-21 2021-03-16 Lam Research Corporation Using modeling for identifying a location of a fault in an RF transmission system for a plasma system
CN104332379B (zh) * 2014-09-02 2017-12-19 清华大学 等离子体放电装置
US9515633B1 (en) * 2016-01-11 2016-12-06 Lam Research Corporation Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers
US9839109B1 (en) * 2016-05-30 2017-12-05 Applied Materials, Inc. Dynamic control band for RF plasma current ratio control
US10553465B2 (en) * 2016-07-25 2020-02-04 Lam Research Corporation Control of water bow in multiple stations
CN108271307B (zh) * 2016-12-30 2019-11-05 中微半导体设备(上海)股份有限公司 电感耦合等离子体处理装置与等离子体产生装置
CN108882494B (zh) * 2017-05-08 2022-06-17 北京北方华创微电子装备有限公司 等离子体装置
KR102644960B1 (ko) 2017-11-29 2024-03-07 코멧 테크놀로지스 유에스에이, 인크. 임피던스 매칭 네트워크 제어를 위한 리튜닝
CN111192752B (zh) * 2018-11-14 2021-08-31 江苏鲁汶仪器有限公司 一种功率分配电感耦合线圈及具有其的等离子体处理装置
CN111199860A (zh) 2018-11-20 2020-05-26 江苏鲁汶仪器有限公司 一种刻蚀均匀性调节装置及方法
US11114279B2 (en) * 2019-06-28 2021-09-07 COMET Technologies USA, Inc. Arc suppression device for plasma processing equipment
US11107661B2 (en) 2019-07-09 2021-08-31 COMET Technologies USA, Inc. Hybrid matching network topology
WO2021041984A1 (en) 2019-08-28 2021-03-04 COMET Technologies USA, Inc. High power low frequency coils
US11342887B2 (en) * 2019-12-18 2022-05-24 Nxp Usa, Inc. Wideband RF power splitters and amplifiers including wideband RF power splitters
CN113496863B (zh) * 2020-04-01 2022-04-12 吉佳蓝科技股份有限公司 等离子体天线模块
KR102147877B1 (ko) * 2020-04-01 2020-08-25 주식회사 기가레인 플라즈마 안테나 모듈
KR20230071629A (ko) * 2021-11-16 2023-05-23 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 소자 제조 방법
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JP2008078355A (ja) * 2006-09-21 2008-04-03 Mitsubishi Heavy Ind Ltd 薄膜製造装置及び太陽電池の製造方法

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Publication number Publication date
US20100314048A1 (en) 2010-12-16
WO2010144555A3 (en) 2011-02-24
US9305750B2 (en) 2016-04-05
JP5643301B2 (ja) 2014-12-17
KR20120028916A (ko) 2012-03-23
CN102804930A (zh) 2012-11-28
SG10201402467SA (en) 2014-09-26
SG176069A1 (en) 2011-12-29
JP2012529750A (ja) 2012-11-22
WO2010144555A2 (en) 2010-12-16
TW201127224A (en) 2011-08-01

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