SG10201402467SA - Adjusting current ratios in inductively coupled plasma processing systems - Google Patents
Adjusting current ratios in inductively coupled plasma processing systemsInfo
- Publication number
- SG10201402467SA SG10201402467SA SG10201402467SA SG10201402467SA SG10201402467SA SG 10201402467S A SG10201402467S A SG 10201402467SA SG 10201402467S A SG10201402467S A SG 10201402467SA SG 10201402467S A SG10201402467S A SG 10201402467SA SG 10201402467S A SG10201402467S A SG 10201402467SA
- Authority
- SG
- Singapore
- Prior art keywords
- plasma processing
- processing systems
- inductively coupled
- coupled plasma
- adjusting current
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
- H01J37/3211—Antennas, e.g. particular shapes of coils
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32715—Workpiece holder
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US18671009P | 2009-06-12 | 2009-06-12 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG10201402467SA true SG10201402467SA (en) | 2014-09-26 |
Family
ID=43305377
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG10201402467SA SG10201402467SA (en) | 2009-06-12 | 2010-06-09 | Adjusting current ratios in inductively coupled plasma processing systems |
| SG2011083961A SG176069A1 (en) | 2009-06-12 | 2010-06-09 | Adjusting current ratios in inductively coupled plasma processing systems |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG2011083961A SG176069A1 (en) | 2009-06-12 | 2010-06-09 | Adjusting current ratios in inductively coupled plasma processing systems |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US9305750B2 (en) |
| JP (1) | JP5643301B2 (en) |
| KR (1) | KR101708075B1 (en) |
| CN (1) | CN102804930A (en) |
| SG (2) | SG10201402467SA (en) |
| TW (1) | TW201127224A (en) |
| WO (1) | WO2010144555A2 (en) |
Families Citing this family (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8501631B2 (en) * | 2009-11-19 | 2013-08-06 | Lam Research Corporation | Plasma processing system control based on RF voltage |
| JPWO2011102083A1 (en) * | 2010-02-19 | 2013-06-17 | 株式会社アルバック | Plasma processing apparatus and plasma processing method |
| JP5781349B2 (en) | 2011-03-30 | 2015-09-24 | 東京エレクトロン株式会社 | Plasma processing equipment |
| US10056231B2 (en) * | 2011-04-28 | 2018-08-21 | Lam Research Corporation | TCCT match circuit for plasma etch chambers |
| US9320126B2 (en) | 2012-12-17 | 2016-04-19 | Lam Research Corporation | Determining a value of a variable on an RF transmission model |
| US9197196B2 (en) | 2012-02-22 | 2015-11-24 | Lam Research Corporation | State-based adjustment of power and frequency |
| US10128090B2 (en) | 2012-02-22 | 2018-11-13 | Lam Research Corporation | RF impedance model based fault detection |
| US10157729B2 (en) | 2012-02-22 | 2018-12-18 | Lam Research Corporation | Soft pulsing |
| US9462672B2 (en) | 2012-02-22 | 2016-10-04 | Lam Research Corporation | Adjustment of power and frequency based on three or more states |
| US9114666B2 (en) | 2012-02-22 | 2015-08-25 | Lam Research Corporation | Methods and apparatus for controlling plasma in a plasma processing system |
| US9842725B2 (en) | 2013-01-31 | 2017-12-12 | Lam Research Corporation | Using modeling to determine ion energy associated with a plasma system |
| CN103060778B (en) * | 2013-01-23 | 2015-03-11 | 深圳市劲拓自动化设备股份有限公司 | Flat plate type PECVD (Plasma Enhanced Chemical Vapor Deposition) device |
| KR20140122548A (en) * | 2013-04-10 | 2014-10-20 | 피에스케이 주식회사 | Apparatus and method for providing power, and apparatus for treating substrate using the same |
| KR102175081B1 (en) * | 2013-12-27 | 2020-11-06 | 세메스 주식회사 | Plasma generating device and apparatus for treating substrate comprising the same |
| US9594105B2 (en) | 2014-01-10 | 2017-03-14 | Lam Research Corporation | Cable power loss determination for virtual metrology |
| US10950421B2 (en) | 2014-04-21 | 2021-03-16 | Lam Research Corporation | Using modeling for identifying a location of a fault in an RF transmission system for a plasma system |
| CN104332379B (en) * | 2014-09-02 | 2017-12-19 | 清华大学 | Plasma discharge apparatus |
| US9515633B1 (en) * | 2016-01-11 | 2016-12-06 | Lam Research Corporation | Transformer coupled capacitive tuning circuit with fast impedance switching for plasma etch chambers |
| US9839109B1 (en) * | 2016-05-30 | 2017-12-05 | Applied Materials, Inc. | Dynamic control band for RF plasma current ratio control |
| US10553465B2 (en) * | 2016-07-25 | 2020-02-04 | Lam Research Corporation | Control of water bow in multiple stations |
| CN108271307B (en) * | 2016-12-30 | 2019-11-05 | 中微半导体设备(上海)股份有限公司 | Inductance coupling plasma processing device and plasma generating device |
| CN108882494B (en) * | 2017-05-08 | 2022-06-17 | 北京北方华创微电子装备有限公司 | Plasma device |
| CN111699542B (en) | 2017-11-29 | 2023-05-16 | 康姆艾德技术美国分公司 | Retuning for impedance matching network control |
| CN111192752B (en) * | 2018-11-14 | 2021-08-31 | 江苏鲁汶仪器有限公司 | Power distribution inductive coupling coil and plasma processing device with same |
| CN111199860A (en) * | 2018-11-20 | 2020-05-26 | 江苏鲁汶仪器有限公司 | Etching uniformity adjusting device and method |
| US11114279B2 (en) * | 2019-06-28 | 2021-09-07 | COMET Technologies USA, Inc. | Arc suppression device for plasma processing equipment |
| US11107661B2 (en) | 2019-07-09 | 2021-08-31 | COMET Technologies USA, Inc. | Hybrid matching network topology |
| US11342887B2 (en) * | 2019-12-18 | 2022-05-24 | Nxp Usa, Inc. | Wideband RF power splitters and amplifiers including wideband RF power splitters |
| KR102147877B1 (en) * | 2020-04-01 | 2020-08-25 | 주식회사 기가레인 | Plasma antena module |
| CN113496863B (en) * | 2020-04-01 | 2022-04-12 | 吉佳蓝科技股份有限公司 | Plasma antenna module |
Family Cites Families (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW293983B (en) * | 1993-12-17 | 1996-12-21 | Tokyo Electron Co Ltd | |
| US5907221A (en) * | 1995-08-16 | 1999-05-25 | Applied Materials, Inc. | Inductively coupled plasma reactor with an inductive coil antenna having independent loops |
| US6054013A (en) | 1996-02-02 | 2000-04-25 | Applied Materials, Inc. | Parallel plate electrode plasma reactor having an inductive antenna and adjustable radial distribution of plasma ion density |
| KR100601749B1 (en) | 1997-11-10 | 2006-07-19 | 제온 코포레이션 | Binder containing vinyl alcohol polymer, slurry, electrode, and secondary battery with nonaqueous electrolyte |
| US6326597B1 (en) * | 1999-04-15 | 2001-12-04 | Applied Materials, Inc. | Temperature control system for process chamber |
| KR100338057B1 (en) * | 1999-08-26 | 2002-05-24 | 황 철 주 | Antenna device for generating inductively coupled plasma |
| US6507155B1 (en) | 2000-04-06 | 2003-01-14 | Applied Materials Inc. | Inductively coupled plasma source with controllable power deposition |
| JP2003100723A (en) | 2001-09-27 | 2003-04-04 | Tokyo Electron Ltd | Inductive coupled plasma processing apparatus |
| US6876155B2 (en) * | 2002-12-31 | 2005-04-05 | Lam Research Corporation | Plasma processor apparatus and method, and antenna |
| KR101144018B1 (en) * | 2004-05-28 | 2012-05-09 | 램 리써치 코포레이션 | Plasma processor with electrode responsive to multiple rf frequencies |
| KR100648336B1 (en) * | 2004-07-12 | 2006-11-23 | 어플라이드 머티어리얼스, 인코포레이티드 | Apparatus and methods for a fixed impedance transformation network for use in connection with a plasma chamber |
| JP4884901B2 (en) | 2006-09-21 | 2012-02-29 | 三菱重工業株式会社 | Thin film manufacturing apparatus and solar cell manufacturing method |
| KR100898165B1 (en) | 2006-11-24 | 2009-05-19 | 엘지전자 주식회사 | Apparatus and method for generation a plasma |
| KR20080102615A (en) * | 2007-05-21 | 2008-11-26 | 네스트 주식회사 | Method and apparatus for multi-mode plasma generation |
| JP5329167B2 (en) | 2007-11-21 | 2013-10-30 | 東京エレクトロン株式会社 | Inductively coupled plasma processing apparatus, inductively coupled plasma processing method, and storage medium |
-
2010
- 2010-03-19 US US12/728,112 patent/US9305750B2/en active Active
- 2010-06-09 JP JP2012515098A patent/JP5643301B2/en active Active
- 2010-06-09 WO PCT/US2010/037942 patent/WO2010144555A2/en active Application Filing
- 2010-06-09 KR KR1020117029647A patent/KR101708075B1/en active IP Right Grant
- 2010-06-09 SG SG10201402467SA patent/SG10201402467SA/en unknown
- 2010-06-09 CN CN2010800262057A patent/CN102804930A/en active Pending
- 2010-06-09 SG SG2011083961A patent/SG176069A1/en unknown
- 2010-06-11 TW TW99119079A patent/TW201127224A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| US9305750B2 (en) | 2016-04-05 |
| US20100314048A1 (en) | 2010-12-16 |
| WO2010144555A3 (en) | 2011-02-24 |
| TW201127224A (en) | 2011-08-01 |
| KR101708075B1 (en) | 2017-02-17 |
| WO2010144555A2 (en) | 2010-12-16 |
| JP5643301B2 (en) | 2014-12-17 |
| SG176069A1 (en) | 2011-12-29 |
| CN102804930A (en) | 2012-11-28 |
| KR20120028916A (en) | 2012-03-23 |
| JP2012529750A (en) | 2012-11-22 |
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