KR20140122548A - Apparatus and method for providing power, and apparatus for treating substrate using the same - Google Patents

Abstract

The present invention relates to a power supply apparatus, a power supply method, and a substrate processing apparatus using the same. The power supply apparatus according to an embodiment of the present invention includes: an RF power source unit which provides an RF signal; an impedance matching unit which matches the impedance of multiple loads which are supplied with the RF signal; and a variable impedance device which is connected to a part of the multiple loads and a fixed impedance device which is connected with a remaining part of the multiple loads. The power supply apparatus is able to include: a power controlling unit which controls power which is supplied to each load; a sensor unit which senses an RF signal which is applied on each load; and a control unit which controls the impedance of the variable impedance device based on the sensed data of the sensor unit.

Description

TECHNICAL FIELD [0001] The present invention relates to a power supply apparatus, a power supply method, and a substrate processing apparatus using the same. BACKGROUND OF THE INVENTION 1. Field of the Invention [0001]

The present invention relates to a power supply apparatus, a power supply method, and a substrate processing apparatus using the same.

Processes for fabricating semiconductors, displays, solar cells, and the like include processes for processing substrates using plasma. For example, an etching apparatus used for dry etching in a semiconductor manufacturing process or an ashing apparatus used for ashing may include a chamber for generating a plasma, and the substrate may be etched or ashed using the plasma .

Such a substrate processing apparatus induces an electromagnetic field in the chamber by flowing a time-varying current to a coil installed in the chamber to generate a plasma, and generates a plasma from the gas supplied to the chamber using the induced electromagnetic field. In addition, when the substrate processing apparatus includes a plurality of plasma chambers and processes the substrates at various stations, it is important to transfer the same power to each plasma chamber.

Further, when the impedance of the plasma chamber is changed according to the progress of the process, the amount of power in each chamber may fluctuate. Such fluctuation of the power may affect the plasma flicker phenomenon in the plasma chamber and increase the impedance matching time .

An embodiment of the present invention aims to provide a power supply apparatus, a power supply method, and a substrate processing apparatus capable of accurately and quickly delivering a constant power to a plurality of plasma chambers.

It is an object of the present invention to provide a power supply apparatus, a power supply method, and a substrate processing apparatus capable of efficiently transmitting power to a plurality of plasma chambers.

According to an aspect of the present invention, there is provided a power supply device including: an RF power supply unit for providing an RF signal; An impedance matching unit for matching impedances of a plurality of loads supplied with the RF signal; A variable impedance element connected to a part of the plurality of loads and a fixed impedance element connected to the rest of the plurality of loads, the power adjusting part adjusting the amount of power supplied to each load; A sensor unit for sensing an RF signal applied to each load; And a controller for controlling the impedance of the variable impedance element based on sensing data of the sensor unit.

The load may include a plasma device that generates plasma using the RF signal.

The plurality of loads may be connected to each other in parallel.

The variable impedance element includes a variable capacitor whose capacitance is changed, and the fixed impedance element may include a fixed capacitor having a fixed capacitance.

The sensor unit may sense at least one of voltage, current, and phase of the RF signal.

The impedance matching unit may adjust the impedance so that a reflected wave reflected from the load of the RF signal is reduced to a predetermined allowable range.

Wherein the impedance matching unit measures an amount of power supplied to each load based on the sensed data after matching the impedances of the plurality of loads and controls the amount of power to be adjusted within a predetermined target power range, The impedance of the variable impedance element can be controlled.

The impedance matching unit may match the impedances of the plurality of loads after the control unit controls the impedance of the variable impedance unit.

A power supply method according to an embodiment of the present invention includes: generating an RF signal; Matching an impedance of a plurality of loads to which the RF signal is applied; Measuring an amount of power supplied to each load; And adjusting the impedance of the variable impedance element connected to a part of the plurality of loads when the amount of power is out of a predetermined target power range.

The step of matching the impedance may include: measuring a reflected wave reflected from the load of the RF signal; And adjusting an impedance of the impedance matching unit so that the reflected wave is reduced to within the allowable range when the reflected wave is out of a predetermined allowable range.

The power supply method may include: adjusting an impedance of the variable impedance element, and then matching impedances of the plurality of loads; Measuring an amount of power supplied to each load; And adjusting the impedance of the variable impedance element when the amount of power is out of the target power range.

A substrate processing apparatus according to an embodiment of the present invention includes: a power supply device for supplying RF power; And a plurality of plasma devices for generating a plasma with the RF power to process the substrate, the power supply comprising: an RF power supply for providing an RF signal; An impedance matching unit for matching impedances of the plurality of plasma apparatuses; A power adjusting unit that includes a variable impedance element connected to a part of the plurality of plasma apparatuses and a fixed impedance element connected to the other of the plurality of plasma apparatuses, the power adjusting unit adjusting an amount of power supplied to each plasma apparatus; A sensor unit for sensing an RF signal applied to each of the plasma devices; And a control unit for controlling the impedance of the variable impedance element based on the sensing data of the sensor unit, wherein the plasma processing apparatus includes: a processing unit for providing a space in which a substrate is disposed to perform a processing process; A plasma generator for generating a plasma and supplying the generated plasma to the processing unit; And an exhaust unit for exhausting gas and reaction by-products in the processing unit.

The plurality of plasma devices may be connected in parallel to the power supply.

The variable impedance element includes a variable capacitor whose capacitance is changed, and the fixed impedance element may include a fixed capacitor having a fixed capacitance.

The sensor unit may sense at least one of voltage, current, and phase of the RF signal.

The impedance matching unit may adjust the impedance so that a reflected wave reflected from the plasma device and returned back to the RF device is reduced to a predetermined tolerance.

The impedance matching unit may measure an amount of power supplied to each of the plasma devices based on the sensing data after matching the impedances of the plurality of plasma devices and adjust the measured amount of power to a predetermined target power range So that the impedance of the variable impedance element can be controlled.

The impedance matching unit may match the impedances of the plurality of plasma apparatuses after the control unit controls the impedance of the variable impedance elements.

The power supply method according to an embodiment of the present invention may be implemented by a computer-executable program and recorded in a computer-readable recording medium.

According to an embodiment of the present invention, a constant power can be accurately and quickly transferred to a plurality of plasma chambers.

According to an embodiment of the present invention, power can be efficiently transferred to a plurality of plasma chambers.

1 is a block diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.
2 is a schematic view of a plasma apparatus according to an embodiment of the present invention.
3 is a block diagram illustrating an exemplary power supply according to an embodiment of the present invention.
4 is a circuit diagram showing an exemplary configuration of a power control unit according to an embodiment of the present invention.
6 is a diagram illustrating an exemplary power supply method according to an embodiment of the present invention.
7 is a view for explaining an impedance matching process according to an embodiment of the present invention.

Other advantages and features of the present invention and methods of achieving them will become apparent with reference to the embodiments described below in detail with reference to the accompanying drawings. The present invention may, however, be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of the invention to those skilled in the art. Is provided to fully convey the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims.

Unless defined otherwise, all terms (including technical or scientific terms) used herein have the same meaning as commonly accepted by the generic art in the prior art to which this invention belongs. Terms defined by generic dictionaries may be interpreted to have the same meaning as in the related art and / or in the text of this application, and may be conceptualized or overly formalized, even if not expressly defined herein I will not.

The terminology used herein is for the purpose of illustrating embodiments and is not intended to be limiting of the present invention. In the present specification, the singular form includes plural forms unless otherwise specified in the specification. As used herein, the terms' comprise 'and / or various forms of use of the verb include, for example,' including, '' including, '' including, '' including, Steps, operations, and / or elements do not preclude the presence or addition of one or more other compositions, components, components, steps, operations, and / or components. The term 'and / or' as used herein refers to each of the listed configurations or various combinations thereof.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings attached hereto.

1 is a block diagram schematically showing a substrate processing apparatus according to an embodiment of the present invention.

1, the substrate processing apparatus 1 may include a power supply apparatus 10 and a plurality of plasma apparatuses 21, 22. The power supply 10 may supply RF power to the plasma devices 21, 22. The plasma apparatuses 21 and 22 can generate plasma by the RF power to process the substrate.

Although the substrate processing apparatus 1 is shown as including two plasma apparatuses 21 and 22 in FIG. 1, the number of plasma apparatuses included in the substrate processing apparatus 1 is not limited thereto, and three or more .

The plasma devices 21, 22 can act as loads to the power supply 10. The plurality of plasma apparatuses 21 and 22 may be connected to the power supply apparatus 10 in parallel.

2 schematically shows a plasma device 21, 22 according to an embodiment of the invention.

2, the plasma devices 21 and 22 include a processing part 100, a plasma generating part 200, and an exhausting part 300 . The process processing unit 100 may perform a substrate processing process such as an ashing process, an etching process, and the like. The plasma generating unit 200 may generate a plasma required for the substrate process and supply the generated plasma to the process processing unit 100. The exhaust unit 300 may discharge gas, reaction byproducts, and the like inside the processing unit 100 to the outside.

Specifically, the processing unit 100 includes a process chamber 110, first and second chucks 120a and 120b, a seal cover 140, first and second shower heads 150a and 150b, 150b.

The process chamber 110 may provide space for performing the substrate processing process. 1, the internal space of the process chamber 110 may be divided into a first space FS and a second space SS, and a first space FS may be formed in the substrate processing process, The substrate W may be loaded in the first space SS and the second space SS, respectively, and the process may be performed in the first and second spaces FS and SS, respectively.

A substrate entrance 112a through which the substrate W is introduced and removed can be provided on the side wall of the process chamber 110. The substrate entrance 112a is opened and closed by an opening / closing member such as a slit door . The bottom surface 111 of the process chamber 110 may be provided with vents 111a, 111b, and 111c. The exhaust vents 111a, 111b and 111c can exhaust gas or reaction by-products in the process chamber 110 and can be formed around the first and second chucks 120a and 120b, ).

In the process chamber 110, first and second chucks 120a and 120b may be installed. The first chuck 120a may be installed in the first space FS and the second chuck 120b may be installed in the second space SS. The substrate W is mounted on the first and second chucks 120a and 120b and the substrates W are mounted on the first and second chucks 120a and 120b. Here, the first and second chucks 120a and 120b may be electrode chucks, but the present invention is not limited thereto.

In addition, the first and second chucks 120a and 120b can heat the substrate W, which is seated in the process, to a predetermined process temperature. To this end, the first and second chucks 120a and 120b may include lift pins and at least one heater for loading and unloading the substrate W, respectively. The first and second chucks 120a and 120b may receive an RF signal from the power supply 10 according to an embodiment of the present invention and the power supply 10 may supply a predetermined amount of bias power To the connected chucks 120a and 120b.

The hermetic cover 140 and the first and second showerheads 150a and 150b may be installed on the first and second chucks 120a and 120b. A sealing cover 140 is provided on the top of the process chamber 110 and may be coupled with the process chamber 110 to seal the first and second spaces FS and SS. In other words, the sealing cover 140 may include a first cover portion 141 and a second cover portion 142 formed to correspond one-to-one to the first and second spaces FS and SS. The first and second cover portions 141 and 142 may be respectively coupled to the plasma generating unit 200 and the inlets through which the plasma from the plasma generating unit 200 flows may be formed. Guide spaces GS1 and GS2 for providing the plasma introduced through the inlet ports to the first and second showerheads 150a and 150b are provided in the first and second cover parts 141 and 142, One-to-one correspondence to the second chucks 120a and 120b. In one embodiment of the present invention, the guide spaces GS1 and GS2 may be formed in an inverted funnel shape.

A first showerhead 150a may be installed under the first cover part 141 and a second showerhead 150b may be provided under the second cover part 142. [ The first showerhead 150a may be installed on the upper portion of the first chuck 120a and the plasma introduced into the guide space GS1 of the first cover portion 141 may be disposed on the first chuck 120a, (W). The second showerhead 150b may be installed on the upper portion of the second chuck 120b and the plasma introduced into the guide space GS2 of the second cover portion 142 may be disposed on the second chuck 120b, (W).

The plasma generating unit 200 may be installed on the first and second cover units 141 and 142. The plasma generation unit 200 may include first and second remote plasma generation units 210 and 220, respectively, for generating a plasma. The first remote plasma generating unit 210 may be installed on the upper portion of the first cover portion 141 and generate plasma to provide the generated plasma to the guide space GS1 in the first cover portion 141. [ The second remote plasma generating unit 220 may be installed on the upper portion of the second cover portion 142 and generate plasma to provide the induced space GS2 in the second cover portion 142. [

Specifically, the first and second remote plasma generating units 210 and 220 include magnetrons 211 and 221, waveguides 212 and 222, plasma source units 213 and 223, and gas supply tubes 214 and 224 ).

The microwaves generated from the magnetrons 211 and 221 connected to the waveguides 212 and 222 are supplied to the plasma source units 211 and 221. The microwaves generated from the magnetrons 211 and 221 are generated by the magnetrons 211 and 221, (213, 223). The gas supply pipes 214 and 224 are connected to the plasma source units 213 and 223 and can supply the reaction gas necessary for plasma generation to the connected plasma source units 213 and 223.

Plasma can be generated in the plasma source units 213 and 223 by the reaction gas from the gas supply pipes 214 and 224 and the microwave from the magnetrons 211 and 221.

The plasma source units 213 and 223 may be coupled to the first and second cover units 141 and 142. The plasma generated by the plasma source units 213 and 223 may be supplied to the first and second cover units GS2 of the showerheads 141 and 142 and may be provided to the first and second spaces FS and SS through the first and second showerheads 150a and 150b.

On the other hand, an exhaust unit 300 may be installed under the processing unit 100. The exhaust unit 300 may perform pressure regulation of the first and second spaces FS and SS and exhaust of the internal air. The exhaust unit 300 may include a main exhaust unit 310, auxiliary exhaust units 320a and 320b, and a valve unit 330.

Specifically, the main exhaust portion 310 may communicate with the main exhaust hole 111a formed in the bottom surface 111 of the process chamber 110. The main exhaust hole 111a may be located in a region between the first chuck 120a and the second chuck 120b and the main exhaust hole 310 may be located in a region between the first and second chucks 120a and 120b. 2 gas and reaction by-products in the space (FS, SS) can be exhausted. The sub exhaust portions 320a and 320b may communicate with the sub exhaust holes 111b and 111c formed on the bottom surface 111 of the process chamber 110. [ The sub exhaust holes 111b and 111c may be positioned adjacent to the side wall 112 of the process chamber 110 and the sub exhaust portions 320a and 320b may be located adjacent to the sub exhaust holes 111b and 111c It is possible to exhaust gas and reaction by-products in the first and second spaces FS and SS. The output ends of the sub-exhaust units 320a and 320b may be connected to the main exhaust unit 310.

The main exhaust unit 310 includes a first exhaust line 311 connected to the bottom surface 111 of the process chamber 110, a second exhaust line 312 connected to the first exhaust line 311, And a third exhaust line 313 connected to the third exhaust line 312.

The first exhaust line 311 may communicate with the main exhaust hole 111a formed in the bottom surface 111 of the process chamber 110 and may extend substantially perpendicular to the ground surface. The second exhaust line 312 may be connected to the first exhaust line 311 at an input end and may extend from the first exhaust line 311 to be inclined with respect to the ground. The third exhaust line 313 may be connected to the second exhaust line 312 at its input end and may extend to be inclined in the opposite direction to the second exhaust line 312 with respect to the ground. The third exhaust line 313 may be connected to the vacuum pump 340. The vacuum pump 340 forcibly sucks the gas in the first and second spaces FS and SS through the main exhaust part 310 and the sub exhaust part 320 to adjust the internal pressure of the process chamber 110, The reaction by-products in the first and second spaces FS and SS can also be forced inhaled and exhausted to the outside.

On the other hand, in the second exhaust line 312, a valve unit 330 for turning on / off the supply of vacuum pressure from the vacuum pump 340 to the first and second spaces FS and SS may be provided . The valve unit 330 is provided corresponding to the point where the second exhaust line 312 and the third exhaust line 313 are connected and the second exhaust line 312 and the third exhaust line 313 are communicated with each other. Can be blocked.

2, the plasma processing apparatuses 21 and 22 are capacitively coupled plasma (CCP) type plasma processing apparatuses. However, in the substrate processing apparatus 1 according to the embodiment of the present invention, various types of plasma processing apparatuses . ≪ / RTI >

3 is a block diagram illustrating an exemplary power supply 10 in accordance with one embodiment of the present invention.

3, the power supply apparatus 10 may include an RF power source unit 11, an impedance matching unit 12, a power control unit 13, a sensor unit 14, and a control unit 15 have.

The RF power supply unit 11 may provide an RF signal. The impedance matching unit 12 may match impedances of a plurality of loads supplied with the RF signal. The power regulator 13 may include a variable impedance element 132 connected to a portion of the plurality of loads and a fixed impedance element 131 connected to the rest of the plurality of loads, Can be adjusted. The sensor unit 14 can sense an RF signal applied to each load. The control unit 15 may control the impedance of the variable impedance element 132 based on the sensing data of the sensor unit 14.

The RF power supply unit 11 can generate an RF signal and output it to a load. The RF power supply unit 11 can transmit power to the load through an RF signal. According to an embodiment, the RF power supply unit 11 may generate and output a sinusoidal RF signal, but the RF signal may have various waveforms such as a square wave, a triangle wave, a saw tooth wave, and a pulse wave.

According to an embodiment of the present invention, the load may include a plasma device (21, 22) for generating a plasma using an RF signal. The plurality of loads may be connected to the RF power supply unit 11 in parallel.

The impedance matching unit 12 may be connected to the output terminal of the RF power unit 11 to match the output impedance of the RF power unit 11 with the input impedance of the load. According to one embodiment, the impedance matching unit 12 may include a variable capacitor. In this case, the impedance matching unit 12 may implement the impedance matching by adjusting the capacitance of the variable capacitor.

According to an embodiment of the present invention, the impedance matching unit 12 may change the capacitance by adjusting the interval between the conductors constituting the variable capacitor by using a stepping motor and driving means combined with the gear stage. According to another embodiment, the impedance matching unit 12 may include a plurality of capacitors and a plurality of switches connecting the plurality of capacitors to the load. In this embodiment, the impedance matching unit 12 can adjust the total capacitance value by opening and closing a switch connected to each capacitor.

According to an embodiment of the present invention, the impedance matching unit 12 measures a reflected wave reflected from the load of the RF signal supplied to the load from the RF power supply unit 11, The impedance of the impedance matching unit 12 can be adjusted so that the reflected wave is reduced within the allowable range.

The power regulator 13 can regulate the amount of power supplied to each load.

According to one embodiment of the present invention, the power regulation section 13 may include a variable impedance element 132 connected to a part of the plurality of loads, and a fixed impedance element 131 connected to the rest of the plurality of loads .

For example, as shown in FIG. 3, the power regulator 13 includes a fixed impedance element 131 connected to the first plasma device among the two plasma devices, a variable impedance element 132 connected to the second plasma device ). ≪ / RTI >

FIG. 4 is a circuit diagram showing an exemplary configuration of the power adjusting section 13 according to an embodiment of the present invention.

4, according to an embodiment of the present invention, the variable impedance element 132 may include a variable capacitor whose capacitance may be changed, and the fixed impedance element 131 may have a fixed capacitance Lt; RTI ID = 0.0 > capacitors. ≪ / RTI > The capacitance of the variable capacitor 132 may be changed according to a control signal output from the control unit 15 as described later.

5, the variable impedance element 132 may include a variable inductor whose inductance can be changed, but the type of the variable impedance element is not limited to this, And any device whose impedance can be changed.

5, the fixed impedance element 131 may include a fixed inductor having a fixed inductance. However, the type of the fixed impedance element is not limited to this, and the fixed impedance element 131 may have a constant element value, Includes any element.

According to an embodiment, the variable impedance element 132 may be a circuit block including two or more elements including a variable element, and the fixed impedance element 131 may be a circuit block composed of two or more fixed elements.

As described above, when a variable impedance element is connected to only a part of a plurality of loads and a fixed impedance element having a fixed element value is connected to a remaining load, instead of connecting the variable impedance elements to all of the plurality of loads, Can be easily distributed and the time required for impedance matching and power distribution can be shortened.

Referring again to FIG. 3, the sensor unit 14 may be connected to an input terminal of each load to sense an RF signal applied to the load. According to an embodiment of the present invention, the sensor unit 14 may sense at least one of voltage, current, and phase of an RF signal applied to each load. Data regarding the sensed RF signal is transmitted to the control unit 15 and can be used to control the amount of power supplied to the load.

The control unit 15 may control the impedance of the variable impedance element 132 based on the sensing data received from the sensor unit 14.

According to an embodiment of the present invention, the impedance matching unit 12 may measure the amount of power supplied to each load based on the sensed data after the impedance matching unit 12 matches the impedances of the plurality of loads . Then, the control unit 15 can control the impedance of the variable impedance element 132 so that the measured power amount is adjusted to a predetermined target power range. In other words, the operation of adjusting the power amount of the controller 15 may be performed after the impedance matching operation of the impedance matching unit 12 is completed.

For example, as described above, when the reflected wave reflected from the load of the RF signal supplied from the RF power supply unit 11 to the load exceeds the predetermined allowable range, the impedance matching unit 12 outputs the reflected wave The capacitance of the variable capacitor included in the impedance matching unit may be adjusted so that the capacitance of the variable capacitor decreases within the allowable range.

Then, when the impedance matching operation of the impedance matching unit 12 is completed, the controller 15 can receive the sensing data related to the RF signal applied to each load from the sensor unit 14. [ Based on the received sensing data, the controller 15 measures the amount of power supplied to each load and controls the variable capacitor 132 included in the power controller 13 so that the measured power amount falls within a predetermined target power range. The capacitance can be adjusted.

According to an embodiment of the present invention, the controller 15 may distribute power such that the same amount of power is supplied to each load, but the present invention is not limited thereto. May be distributed. For example, the control unit 15 supplies power of 100 W to the first plasma apparatus to which the fixed impedance element 131 is connected, and supplies power of 300 W to the second plasma apparatus to which the variable impedance element 132 is connected The power can be distributed as much as possible.

According to an embodiment of the present invention, when the impedance of the variable impedance element 132 is adjusted by the controller 15 when the amount of power supplied to each load is out of the target power range, The impedance matching operation of the plurality of loads can be performed again after the impedance control operation of the load 15 is completed.

Then, when the impedance matching operation of the impedance matching unit 12 is completed, the controller 15 measures the amount of power supplied to each load again, compares the amount of power supplied to each load with the target power range, The control operation can be terminated. However, when the amount of power supplied to the load is out of the target power range, the impedance adjusting operation of the variable impedance element 132 by the control unit 15 and the impedance matching operation by the impedance matching unit 12 can be repeated have.

6 is a diagram illustrating an exemplary power supply method according to an embodiment of the present invention.

As shown in FIG. 6, the power supply method 400 includes a step S41 of generating an RF signal, a step S42 of matching impedances of a plurality of loads to which the RF signal is applied, (S45) of adjusting the impedance of the variable impedance element connected to a part of the plurality of loads when the amount of power is out of a predetermined target power range (NO in (S44)), . ≪ / RTI >

The power supply method 400 according to an embodiment of the present invention can be performed by the power supply apparatus 10 according to the embodiment of the present invention described above.

7 is a diagram for explaining an impedance matching process S42 according to an embodiment of the present invention.

As shown in FIG. 7, matching the impedance S42 may include measuring a reflected wave reflected from the load among the RF signals (S421), and when the reflected wave is out of a predetermined allowable range S422), and adjusting the impedance of the impedance matching unit 12 so that the reflected wave is reduced within an allowable range (S423).

The step S423 of adjusting the impedance of the impedance matching unit 12 may include adjusting the capacitance of the variable capacitor included in the impedance matching unit 12.

When the reflected wave enters the allowable range by the matching operation of the impedance matching unit 12, the control unit 15 measures the amount of power supplied to each load and determines whether the amount of power corresponds to the target power range .

If it is determined that the amount of power supplied to the load corresponds to the target power range, the power supply method according to an embodiment of the present invention may be terminated and a process of processing the substrate in each plasma apparatus may be performed.

However, if it is determined that the amount of power supplied to the load is out of the target power range, the controller 15 controls the impedance of the variable impedance element 132 connected to the load to control the amount of power to enter the target power range have.

6, when the impedance adjustment process of the variable impedance device is completed, a process of matching the impedance of the load can be performed. When the impedance matching is completed, the energy measurement and comparison process is performed again .

According to an embodiment of the present invention, the impedance matching step S42, the electric energy amount measuring step S43, the electric energy amount comparing step S44 and the impedance adjusting step S45 described above are performed in the same manner as the above- (Yes at S44) until it is determined that the amount of power is within the target power range.

According to one embodiment of the present invention, the load may include a plasma device (21, 22) for generating a plasma with RF power to process the substrate. According to one embodiment, the plasma apparatus includes a processing unit (100) for providing a space in which a substrate is disposed to perform plasma processing, a processing gas discharging process gas and reaction byproduct from the inside of the processing unit, An exhaust unit 200 that maintains the pressure at a set pressure, and a plasma generation unit 300 that generates plasma from the process gas and supplies the plasma to the process unit.

As described above, a power supply apparatus, a power supply method, and a substrate processing apparatus using the same, which supply power to a plurality of loads, have been described. According to the power supply apparatus, the power supply method, and the substrate processing apparatus, it is possible to accurately and quickly transfer predetermined electric power to a plurality of plasma apparatuses and improve power transfer efficiency, thereby preventing plasma flicker phenomenon and improving process deviation between reactors .

1: substrate processing apparatus
10: Power supply
11: RF power section
12: Impedance matching unit
13:
14:
15:
21, 22: Plasma device

Claims (18)

An RF power supply unit for providing an RF signal;
An impedance matching unit for matching impedances of a plurality of loads supplied with the RF signal;
A variable impedance element connected to a part of the plurality of loads and a fixed impedance element connected to the rest of the plurality of loads, the power adjusting part adjusting the amount of power supplied to each load;
A sensor unit for sensing an RF signal applied to each load; And
A control unit for controlling impedance of the variable impedance element based on sensing data of the sensor unit;
≪ / RTI > The method according to claim 1,
Wherein the load comprises a plasma device for generating a plasma using the RF signal. The method according to claim 1,
Wherein the plurality of loads are connected in parallel with each other. The method according to claim 1,
Wherein the variable impedance element includes a variable capacitor whose capacitance is changed,
Wherein the fixed impedance element comprises a fixed capacitor having a fixed capacitance. The method according to claim 1,
Wherein the sensor unit senses at least one of a voltage, a current, and a phase of the RF signal. The method according to claim 1,
Wherein the impedance matching unit comprises:
And the impedance of the RF signal is adjusted so that the reflected wave reflected from the load is reduced to a predetermined allowable range. The method according to claim 1,
The control unit includes:
Wherein the impedance matching unit measures the amount of power supplied to each load based on the sensed data after matching the impedances of the plurality of loads and controls the variable impedance element to adjust the measured amount of power to a predetermined target power range. Power supply for controlling impedance. 8. The method of claim 7,
Wherein the impedance matching unit comprises:
And the control unit controls the impedance of the variable impedance element, and then matches the impedances of the plurality of loads. Generating an RF signal;
Matching an impedance of a plurality of loads to which the RF signal is applied;
Measuring an amount of power supplied to each load; And
Adjusting an impedance of a variable impedance element connected to a part of the plurality of loads when the amount of power is out of a predetermined target power range;
≪ / RTI > 10. The method of claim 9,
The step of matching the impedance comprises:
Measuring a reflected wave reflected from the load among the RF signals; And
Adjusting an impedance of the impedance matching unit such that the reflected wave falls within the allowable range when the reflected wave is out of a predetermined allowable range;
≪ / RTI > 10. The method of claim 9,
After adjusting the impedance of the variable impedance element,
Matching the impedances of the plurality of loads;
Measuring an amount of power supplied to each load; And
Adjusting an impedance of the variable impedance element when the amount of power is out of the target power range;
To the power supply. A power supply for supplying RF power; And
And a plurality of plasma devices for generating a plasma with the RF power to process the substrate,
The power supply comprises:
An RF power supply unit for providing an RF signal;
An impedance matching unit for matching impedances of the plurality of plasma apparatuses;
A power adjusting unit that includes a variable impedance element connected to a part of the plurality of plasma apparatuses and a fixed impedance element connected to the other of the plurality of plasma apparatuses, the power adjusting unit adjusting an amount of power supplied to each plasma apparatus;
A sensor unit for sensing an RF signal applied to each of the plasma devices; And
And a control unit for controlling the impedance of the variable impedance element based on sensing data of the sensor unit,
The plasma apparatus comprising:
A processing unit for providing a space in which a substrate is disposed to perform a processing process;
A plasma generator for generating a plasma and supplying the generated plasma to the processing unit; And
And an exhaust part for exhausting gas and reaction by-products in the processing part. 13. The method of claim 12,
Wherein the plurality of plasma devices are connected in parallel to the power supply. 13. The method of claim 12,
Wherein the variable impedance element includes a variable capacitor whose capacitance is changed,
Wherein the fixed impedance element includes a fixed capacitor having a fixed capacitance. 13. The method of claim 12,
Wherein the sensor unit senses at least one of a voltage, a current, and a phase of the RF signal. 13. The method of claim 12,
Wherein the impedance matching unit comprises:
Wherein the impedance of the RF signal is adjusted so that the reflected wave reflected from the plasma device and returned back to within a predetermined allowable range. 13. The method of claim 12,
The control unit includes:
Wherein the impedance matching unit measures the amount of power supplied to each plasma apparatus based on the sensing data after matching the impedances of the plurality of plasma apparatuses and controls the variable impedance unit to adjust the measured power amount to a predetermined target power range, A substrate processing apparatus for controlling an impedance of a device. 18. The method of claim 17,
Wherein the impedance matching unit comprises:
Wherein the control unit controls the impedance of the variable impedance element and then matches the impedances of the plurality of plasma apparatuses.

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