CN108271307B - Inductance coupling plasma processing device and plasma generating device - Google Patents
Inductance coupling plasma processing device and plasma generating device Download PDFInfo
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- CN108271307B CN108271307B CN201611254290.8A CN201611254290A CN108271307B CN 108271307 B CN108271307 B CN 108271307B CN 201611254290 A CN201611254290 A CN 201611254290A CN 108271307 B CN108271307 B CN 108271307B
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- 230000008878 coupling Effects 0.000 title claims abstract description 12
- 238000010168 coupling process Methods 0.000 title claims abstract description 12
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 12
- 238000009413 insulation Methods 0.000 claims abstract description 11
- 238000006243 chemical reaction Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 5
- 230000001105 regulatory effect Effects 0.000 abstract description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 230000001976 improved effect Effects 0.000 description 3
- 230000001939 inductive effect Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
- 239000012495 reaction gas Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
- H05H1/4645—Radiofrequency discharges
- H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The present invention provides a kind of inductance coupling plasma processing device and plasma generating device, for that can obtain the broader regulating power to power sharing ratio under the situation of matching range not extending matching network.Plasma processing apparatus therein includes: insulation windows；First coil and the second coil；Radio frequency power source, input terminal are connected with a matching network；Power divider, input terminal are connect with the matching network, include at least two output ends, which is separately connected first coil, the second coil；The ratio of inductance value is between 0.90 to 1.12 between the first coil and the second coil.
Description
Technical field
The present invention relates to inductively coupled plasma body (ICP) processing units that can be used for semiconductor devices production, further relate to
Plasma generating device on the above device can be used.
Background technique
With microelectronic mechanical devices and microelectromechanical systems (MicroElectromechanical System, abbreviation
MEMS it) is more and more widely used in the fields such as automobile and electricity charge electronics, through silicon via (Through Silicon Via, abbreviation
TSV) lithographic technique has bright prospects in the following encapsulation field, and deep silicon etching technique is increasingly becoming MEMS manufacturing field and TSV
Most very powerful and exceedingly arrogant one of technique in technology.
Inductively coupled plasma body (ICP) equipment is the commonly used equipment in MEMS manufacturing field and TSV technology, ICP equipment
Plasma is generated by magnetic field, the plasma performs etching Silicon Wafer for bombarding Silicon Wafer.
Summary of the invention
According to an aspect of the present invention, a kind of inductance coupling plasma processing device is provided, comprising:
Reaction chamber, top are provided with insulation windows；
Coil is set to the top of insulation windows, including first coil and the second coil；
Radio frequency power source, input terminal are connected with a matching network；
Power divider, input terminal are connect with the matching network, include at least two output ends, this two outputs
End is separately connected first coil, the second coil；
It is characterized in that, the ratio of inductance value is between 0.90 to 1.12 between the first coil and the second coil.
Optionally, the first coil has different coil turns from the second coil.
Optionally, the first coil is located at the periphery of second coil, and the coil turn of second coil is greater than
The coil turn of the first coil.
Optionally, by the way that one of following parameters of the first and second coil are arranged or a variety of realize the ratio:
Coil diameter；
Coil turn；
Form the diameter of the conducting wire of coil；
Form the material of the conducting wire of coil.
Optionally, the coil further includes tertiary coil, and the tertiary coil is connected to another output of power divider
End；
The ratio of inductance value is between 0.90 to 1.12 between the tertiary coil and second coil.
Optionally, the first coil and second coil are same type or different type.
It optionally, further include bias power source, for controlling the direction of plasma.
According to another aspect of the present invention, a kind of inductance coupling plasma processing device is provided, comprising:
Reaction chamber, top are provided with insulation windows；
First coil and the second coil, are set to the top of insulation windows, the first coil is located at second coil
Periphery；
Radio frequency power source, input terminal are connected with a matching network；
Power divider, input terminal are connect with the matching network, include at least two output ends, this two outputs
End is separately connected first coil, the second coil；
It is characterized in that, second coil has coil turns more more than the first coil.
Optionally, between the first coil and the second coil the ratio of inductance value between 0.90 to 1.12.
According to a further aspect of the invention, a kind of plasma for inductance coupling plasma processing device is provided
Generation device, comprising: radio frequency power source, input terminal are connected with a matching network；
First coil and the second coil；
Power divider, input terminal are connect with the matching network, and the power divider includes at least two outputs
End, two output ends are separately connected first coil, the second coil；
It is characterized in that, the ratio of inductance value is between 0.90 to 1.12 between the first coil and the second coil.
Optionally, the first coil has different coil turns from the second coil.
Optionally, second coil is located at the periphery of the first coil, and the coil turn of the first coil is greater than
The coil turn of second coil.
Optionally, by the way that one of following parameters of the first and second coil are arranged or a variety of realize the ratio:
Coil diameter；
Coil turn；
Form the diameter of the conducting wire of coil；
Form the material of the conducting wire of coil.
Detailed description of the invention
Fig. 1 and Fig. 2 is for illustrating basic conception of the invention；
Fig. 3 is the structural schematic diagram of inductive type plasma treatment appts one embodiment of the present invention.
Specific embodiment
System in inductively coupled plasma body (ICP) etching device for generating, maintaining plasma mainly includes line
Enclose (coil) and radio frequency power source (source power), matching network etc..Wherein, coil is used to motivate plasma,
Distribution network is used to the impedance conversion that coil and plasma generate be a fixed value (such as 50 Ω).Coil of different shapes,
The impedance to matching network input terminal equivalent to plasma caused by same process conditions is different.Plasma impedance
Also it is influenced by the factors such as air pressure, gas, radio-frequency power in reaction chamber.This causes plasma impedance variation in reaction chamber bright
It is aobvious.Therefore, in order to meet polytechnic demand, there is certain requirement to the scope of application of matching network.
In order to realize uniform plasma density distribution over a greater surface area, and in order to adjust plasma anti-
The distribution of chamber radial direction is answered, concentric multizone coil is used by various etching apparatus more and more, such as Fig. 1, is located at reaction chamber
Two groups of coils are provided in the insulation windows 3 at top, positioned at the first coil 1 of fringe region and second coil in centrally located region
2。
In the equipment for motivating plasma using the structure of multiple coils, it will usually divide the power of each coil
Match.In view of cost and its complexity of structure can use a radio frequency power source generally for concentric multizone loop construction
(radio frequency power source) 42, matching networks 44, the structure of an additional power divider 46 (power distributing circuit) realize,
As shown in Figure 2.
When radio-frequency power is assigned to each coil 1 and 2 by power divider 46, the equivalent impedance value of each coil
(impedance value is related to the Multiple factors such as air pressure, gas, radio-frequency power in reaction chamber) is also different, and impedance value can be with function
Rate allocation proportion and change.The equivalent impedance value to matching network output end can also change, the impedance value both with line
The equivalent impedance of circle 1,2 is related, is also obviously influenced by power sharing ratio.That is, the matching range of matching network
It will receive the influence of power sharing ratio.
In order to realize that the plasma density between large range of middle section/fringe region is adjusted, it is necessary to power
Allocation proportion has sufficiently large variation, this impedance value that will lead to matching network output end has very big fluctuation, thus it requires
Matching network must have broader matching range.
In current related patents and document, analyzes or tested to realize in narrow matching without reference to any technology
Under range, broader power sharing ratio regulating power is realized.
Inventor is the study found that in the case where coil 1 is close with 2 inductance value of coil, the resistance of matching network output end
It is anti-insensitive to the variation of power sharing ratio, that is, the impedance of matching network output end is hardly by power sharing ratio
It influences.Obviously, in this case, even if matching network only has relatively narrow matching range, broader power distribution can also be realized
Ability, stronger radio-frequency power regulating power.
Fig. 3 is one embodiment of inductive type plasma treatment appts of the present invention, is specially an inductive type
Plasma etching device.The processing unit includes a reaction chamber 100, and the lower section inside reaction chamber 100 is provided with for putting
The pedestal 20 of substrate to be processed is set, a bias power source 6 is connected to pedestal 20 by a matching network.The bias power source
Main function be control reaction chamber in plasma incident angle and direction.One exhaust apparatus (not shown) connection
To the outer edge area of pedestal 20, for taking the newly-generated gas in reaction process away and partially having not enough time to participate in the anti-of reaction
Gas is answered, to control the air pressure in reaction chamber 100.It is an insulation windows 3 at the top of reaction chamber 100, since it is electrically insulating material system
At, thus the electromagnetic field of top can pass through it into reaction chamber 100, is dissociated and is generated with the reaction gas in provocative reaction chamber 100
Plasma carries out process.
At least two induction coils are provided with above insulation windows 3: first coil 1 and the second coil 2, first coil 1 are located at
The periphery of second coil 2.In other embodiments, can also there are more coils, for example, can be between the first and second coil 1 and 2
Add a coil.
Radio frequency power source 42 pass sequentially through a matching network 44, a power divider 46 respectively with first coil 1, the second line
2 connection of circle.First and second coil 1 and 2 generates an electromagnetic field of high frequency, this high-frequency electromagnetic after being applied HFRF power
Field is passed down through insulation windows 3 and enters inside reaction chamber 100, and the reaction gas in activated reactions chamber 100 generates and maintains needs
Plasma.Power divider 46 can make adjustment to the power sharing ratio between first coil 1 and the second coil 2, to adjust
Save Density Distribution of the plasma in reaction chamber 100.For example, the plasma density when middle section is significantly less than marginal zone
When domain, this balance can be improved by improving 2 power of the second coil, reduction by 1 power of first coil.
First coil 1 and the inductance value of both the second coils 2 are roughly equal.A large amount of experiment all shows to work as first coil
When with the ratio of both the second coils inductance value between 0.90 to 1.12, power sharing ratio between first coil and the second coil
Adjustment cannot significantly affect the impedance (i.e. load impedance) of matching network output end substantially.In this way, having relatively narrow matching model
The matching network enclosed can also be competent at following harshness, and use environment --- this environmental requirement can tolerate power distribution by a relatively large margin
Ratio adjustment.Certainly, the ratio of the inductance value is closer, and improved effect can be also more obvious.As more preferably embodiment, the ratio
Value can be between 0.95 to 1.06.
In usual etching apparatus, first coil and the second coil have same shape, due to first coil
Diameter be greater than the diameter of the second coil, this makes the inductance value of first coil tend to the inductance value greater than the second coil.For
Make first coil 1 and the second coil 2 that there is roughly equal inductance value in the present embodiment to increase the line of the second coil 2
Enclose the number of turns.
Following parameter (coil diameter；Coil turn；Form the diameter of the conducting wire of coil；The material of the conducting wire of coil is formed,
Deng) size of coil inductance can be influenced, thus, in other embodiments, by adjusting either of which item or it can appoint
Several combinations realize that inductance value is roughly equal.
Illustrate a bit, to adjust the inductance value of the first and second coil, both make to reach of substantially equal degree (first coil with
The ratio of both second coils inductance value is between 0.90 to 1.12), it no doubt can admirably solve described technology in specification and ask
Topic；If but above-mentioned adjustment is not in place (that is, the inductance value both made is not closer to but reaching of substantially equal journey
Degree), it can still improve aforementioned technical problem to a certain extent, the degree only improved is slightly not so good as, so, it should
It is regarded as a part of the invention.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (7)
1. a kind of inductance coupling plasma processing device, comprising:
Reaction chamber, top are provided with insulation windows；
Coil is set to the top of insulation windows, including first coil and the second coil；
Radio frequency power source, input terminal are connected with a matching network；
Power divider, input terminal are connect with the matching network, include at least two output ends, two output ends point
It Lian Jie not first coil, the second coil；It is characterized in that, the first coil surround the periphery for being set to second coil,
The coil turn of second coil is greater than the coil turn of the first coil；
The ratio of inductance value is between 0.90 to 1.12 between the first coil and the second coil.
2. inductance coupling plasma processing device as described in claim 1, which is characterized in that by the way that the first and second line is arranged
One of following parameters of circle a variety of realize the ratio:
Coil diameter；
Coil turn；
Form the diameter of the conducting wire of coil；
Form the material of the conducting wire of coil.
3. inductance coupling plasma processing device as described in claim 1, which is characterized in that the coil further includes third
Coil, the tertiary coil are connected to another output end of power divider；
The ratio of inductance value is between 0.90 to 1.12 between the tertiary coil and second coil.
4. inductance coupling plasma processing device as described in claim 1, which is characterized in that the first coil with it is described
Second coil is same type or different type.
5. inductance coupling plasma processing device as described in claim 1 further includes bias power source, for control etc. from
The direction of daughter.
6. a kind of plasma generating device for inductance coupling plasma processing device, comprising: radio frequency power source, it is defeated
Enter end and is connected with a matching network；
First coil and the second coil；
Power divider, input terminal are connect with the matching network, and the power divider includes at least two output ends, should
Two output ends are separately connected first coil, the second coil；
Second coil encircling is set to the periphery of the first coil, and the coil turn of the first coil is greater than described the
The coil turn of two coil；
It is characterized in that, the ratio of inductance value is between 0.90 to 1.12 between the first coil and the second coil.
7. plasma generating device as claimed in claim 6, which is characterized in that pass through the following of the first and second coil of setting
One of parameter a variety of realizes the ratio:
Coil diameter；
Coil turn；
Form the diameter of the conducting wire of coil；
Form the material of the conducting wire of coil.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611254290.8A CN108271307B (en) | 2016-12-30 | 2016-12-30 | Inductance coupling plasma processing device and plasma generating device |
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| CN201611254290.8A CN108271307B (en) | 2016-12-30 | 2016-12-30 | Inductance coupling plasma processing device and plasma generating device |
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| CN111565505B (en) * | 2019-02-13 | 2023-04-21 | 中微半导体设备(上海)股份有限公司 | ICP device, coil driving circuit thereof and control method |
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| US6583572B2 (en) * | 2001-03-30 | 2003-06-24 | Lam Research Corporation | Inductive plasma processor including current sensor for plasma excitation coil |
| JP4080793B2 (en) * | 2002-06-25 | 2008-04-23 | ワイエイシイ株式会社 | Plasma processing equipment |
| JP2007311182A (en) * | 2006-05-18 | 2007-11-29 | Tokyo Electron Ltd | Inductively-coupled plasma processing device, and plasma processing method |
| CN101677485A (en) * | 2008-09-19 | 2010-03-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing equipment, its radio frequency apparatus and radio frequency conveying method |
| CN101754564B (en) * | 2008-12-09 | 2014-02-19 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Plasma processing device |
| US9305750B2 (en) * | 2009-06-12 | 2016-04-05 | Lam Research Corporation | Adjusting current ratios in inductively coupled plasma processing systems |
| US20110094994A1 (en) * | 2009-10-26 | 2011-04-28 | Applied Materials, Inc. | Inductively coupled plasma apparatus |
| KR101253297B1 (en) * | 2011-02-24 | 2013-04-10 | 엘아이지에이디피 주식회사 | Inductively coupled plasma antenna and Plasma processing apparatus using the same |
| TWI650796B (en) * | 2012-10-23 | 2019-02-11 | 美商蘭姆研究公司 | Transformer coupling capacitor tuning matching circuit and plasma etching chamber with transformer coupling capacitance tuning matching circuit |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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