CN102754215A - 制造光伏电池的方法、由该方法制造的光伏电池及其应用 - Google Patents

制造光伏电池的方法、由该方法制造的光伏电池及其应用 Download PDF

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Publication number
CN102754215A
CN102754215A CN2010800616051A CN201080061605A CN102754215A CN 102754215 A CN102754215 A CN 102754215A CN 2010800616051 A CN2010800616051 A CN 2010800616051A CN 201080061605 A CN201080061605 A CN 201080061605A CN 102754215 A CN102754215 A CN 102754215A
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CN
China
Prior art keywords
layer
dopant
photovoltaic cell
substrate
concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2010800616051A
Other languages
English (en)
Chinese (zh)
Inventor
马拉特·扎克斯
加利纳·克洛莫伊茨
安德雷·西特尼科夫
奥列格·索洛杜卡
列夫·克赖宁
纳夫塔利·P·艾森伯格
尼涅利·博尔汀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SOLAR Ltd B
Solar Wind Ltd
Original Assignee
SOLAR Ltd B
Solar Wind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US12/591,390 external-priority patent/US8586862B2/en
Priority claimed from US12/591,391 external-priority patent/US20110114147A1/en
Application filed by SOLAR Ltd B, Solar Wind Ltd filed Critical SOLAR Ltd B
Publication of CN102754215A publication Critical patent/CN102754215A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/148—Double-emitter photovoltaic cells, e.g. bifacial photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
CN2010800616051A 2009-11-18 2010-11-17 制造光伏电池的方法、由该方法制造的光伏电池及其应用 Pending CN102754215A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US12/591,391 2009-11-18
US12/591,390 US8586862B2 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US12/591,391 US20110114147A1 (en) 2009-11-18 2009-11-18 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US12/591,390 2009-11-18
PCT/IB2010/055221 WO2011061694A2 (en) 2009-11-18 2010-11-17 Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof

Publications (1)

Publication Number Publication Date
CN102754215A true CN102754215A (zh) 2012-10-24

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
CN2010800616051A Pending CN102754215A (zh) 2009-11-18 2010-11-17 制造光伏电池的方法、由该方法制造的光伏电池及其应用
CN201080061602.8A Expired - Fee Related CN102725854B (zh) 2009-11-18 2010-11-17 制造光伏电池的方法、由此产生的光伏电池及其应用

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201080061602.8A Expired - Fee Related CN102725854B (zh) 2009-11-18 2010-11-17 制造光伏电池的方法、由此产生的光伏电池及其应用

Country Status (5)

Country Link
EP (2) EP2502277A2 (https=)
JP (2) JP6027443B2 (https=)
CN (2) CN102754215A (https=)
CA (2) CA2781085A1 (https=)
WO (2) WO2011061694A2 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051575A (zh) * 2014-06-20 2014-09-17 润峰电力有限公司 一种仿生双面受光太阳能电池的制作工艺

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8586862B2 (en) 2009-11-18 2013-11-19 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
US8796060B2 (en) 2009-11-18 2014-08-05 Solar Wind Technologies, Inc. Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof
KR101627029B1 (ko) * 2014-02-20 2016-06-03 제일모직주식회사 Ibc 태양전지의 제조방법
KR101627028B1 (ko) * 2014-02-20 2016-06-03 제일모직주식회사 양면형 태양전지의 제조방법
KR20180100301A (ko) 2015-10-25 2018-09-10 솔라라운드 리미티드 양면형 전지 제조 방법
CN107340785B (zh) * 2016-12-15 2021-05-18 江苏林洋新能源科技有限公司 一种基于智能化控制的双面光伏电池组件跟踪方法及控制器
CH713453A1 (de) 2017-02-13 2018-08-15 Evatec Ag Verfahren zur Herstellung eines Substrates mit einer bordotierten Oberfläche.
AU2018399942B2 (en) * 2018-01-08 2023-02-02 Solaround Ltd. Bifacial photovoltaic cell and method of fabrication
WO2020154784A1 (pt) * 2019-01-30 2020-08-06 Tégula Soluções Para Telhados Ltda Célula fotovoltaica, processo de fabricação de célula fotovoltaica encapsulada, conjunto de conexão elétrica para telha fotovoltaica e telha fotovoltaica
CN114649427B (zh) * 2021-09-14 2023-09-12 浙江晶科能源有限公司 太阳能电池及光伏组件
CN119850580B (zh) * 2025-01-03 2025-11-21 香港理工大学深圳研究院 一种接触网零部件检测方法、装置、终端及存储介质

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US4322571A (en) * 1980-07-17 1982-03-30 The Boeing Company Solar cells and methods for manufacture thereof
US6147297A (en) * 1995-06-21 2000-11-14 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof
US20070113881A1 (en) * 2005-11-22 2007-05-24 Guardian Industries Corp. Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product
WO2009010585A2 (en) * 2007-07-18 2009-01-22 Interuniversitair Microelektronica Centrum Vzw Method for producing an emitter structure and emitter structures resulting therefrom

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US6147297A (en) * 1995-06-21 2000-11-14 Fraunhofer Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Solar cell having an emitter provided with a surface texture and a process for the fabrication thereof
US20070113881A1 (en) * 2005-11-22 2007-05-24 Guardian Industries Corp. Method of making solar cell with antireflective coating using combustion chemical vapor deposition (CCVD) and corresponding product
WO2009010585A2 (en) * 2007-07-18 2009-01-22 Interuniversitair Microelektronica Centrum Vzw Method for producing an emitter structure and emitter structures resulting therefrom

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104051575A (zh) * 2014-06-20 2014-09-17 润峰电力有限公司 一种仿生双面受光太阳能电池的制作工艺
CN104051575B (zh) * 2014-06-20 2016-08-17 润峰电力有限公司 一种仿生双面受光太阳能电池的制作工艺

Also Published As

Publication number Publication date
WO2011061694A3 (en) 2012-01-19
CA2781085A1 (en) 2011-05-26
JP2013511838A (ja) 2013-04-04
CA2780913A1 (en) 2011-05-26
EP2502278A2 (en) 2012-09-26
CN102725854B (zh) 2015-11-25
JP2013511839A (ja) 2013-04-04
WO2011061693A2 (en) 2011-05-26
CN102725854A (zh) 2012-10-10
WO2011061694A2 (en) 2011-05-26
JP6027443B2 (ja) 2016-11-16
EP2502277A2 (en) 2012-09-26
WO2011061693A3 (en) 2012-01-05

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Application publication date: 20121024