JP6027443B2 - 光起電力セルの製造方法、それによって製造された光起電力セル、およびその用途 - Google Patents
光起電力セルの製造方法、それによって製造された光起電力セル、およびその用途 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000002019 doping agent Substances 0.000 claims description 200
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- 238000000151 deposition Methods 0.000 claims description 23
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- 238000010438 heat treatment Methods 0.000 claims description 13
- 210000004027 cell Anatomy 0.000 description 157
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 16
- 229910052698 phosphorus Inorganic materials 0.000 description 16
- 239000011574 phosphorus Substances 0.000 description 16
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 14
- 230000015572 biosynthetic process Effects 0.000 description 14
- 239000000243 solution Substances 0.000 description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- 230000005855 radiation Effects 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 9
- 229910052796 boron Inorganic materials 0.000 description 9
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 8
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000005611 electricity Effects 0.000 description 4
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- 238000010561 standard procedure Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 229910052810 boron oxide Inorganic materials 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- YWEUIGNSBFLMFL-UHFFFAOYSA-N diphosphonate Chemical compound O=P(=O)OP(=O)=O YWEUIGNSBFLMFL-UHFFFAOYSA-N 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- DLYUQMMRRRQYAE-UHFFFAOYSA-N phosphorus pentoxide Inorganic materials O1P(O2)(=O)OP3(=O)OP1(=O)OP2(=O)O3 DLYUQMMRRRQYAE-UHFFFAOYSA-N 0.000 description 3
- 239000005360 phosphosilicate glass Substances 0.000 description 3
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- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- -1 ammonium peroxide Chemical class 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000001505 atmospheric-pressure chemical vapour deposition Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
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- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001690 polydopamine Polymers 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
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- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
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- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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Description
a)半導体基板の第1表面にnドーパントをドープして、基板に第1n+層を形成するステップと、
b)基板の第2表面にpドーパントをドープして、基板にp+層を形成するステップと、
c)基板の第1表面に残存するnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面から第1n+層の一部分を除去するステップと、
d)第2n+層のnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面にnドーパントをドープして、第2n+層を形成するステップと、
e)第1表面および第2表面の各々に電気接点を形成し、
それによって光起電力セルを製造するステップと、
を含む、光起電力セルを製造する方法を提供する。
a)半導体基板の第2表面にpドーパントを含む膜を被着するステップと、
b)基板の第1表面および基板の縁からpドーパントを含む膜を除去するステップと、
c)nドーパントを含む膜を第1表面に被着するステップと、
d)基板の第1表面における第1n+層および第2表面におけるp+層を同時に形成するために、基板を加熱するステップと、
e)基板の第1表面に残存するnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面から第1n+層の一部分を除去するステップと、
f)第2n+層のnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面にnドーパントをドープして、第2n+層を形成するステップと、
g)第1表面および第2表面の各々に電気接点を形成し、
それによって光起電力セルを製造するステップと、
を含む、光起電力セルの製造方法を提供する。
a)半導体基板の第2表面にpドーパントを含む膜を被着するステップと、
b)基板の第1表面および基板の縁からpドーパントを含む膜を除去するステップと、
c)nドーパントを含む膜を第1表面に被着するステップと、
d)基板の第1表面における第1n+層および第2表面におけるp+層を同時に形成するために、基板を加熱するステップと、
e)基板の第1表面に残存するnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面から第1n+層の一部分を除去するステップと、
f)第1表面および第2表面の各々に電気接点を形成し、
それによって光起電力セルを製造するステップと、
を含む、光起電力セルの製造方法を提供する。
第1表面が山と谷とを含むようにテクスチャ加工され、かつ
n+層のnドーパントの濃度が、第1表面の山では第1表面の谷より高い、
光起電力セルを提供する。
第1表面が山と谷とを含むようにテクスチャ加工され、かつ
n+層のnドーパントの濃度が、第1表面の山では第1表面の谷より高い、
p+層およびn+層は互いに接触せず、かつp+層は第2表面の縁に到達しない、
光起電力セルを提供する。
p+層およびn+層は互いに接触せず、p+層は第2表面の縁に到達しない、
光起電力セルを提供する。
(i)pドーパントを含む膜を第2表面に被着すること、
(ii)nドーパントを含む膜を第1表面に被着すること、および
(iii)基板を加熱し、
それによって第1n+層およびp+層を同時に形成すること
によって達成される。
a)半導体基板の第1表面にnドーパントをドープして、基板に第1n+層を形成するステップと、
b)基板の第2表面にpドーパントをドープして、基板にp+層を形成するステップと、
c)基板の第1表面に残存するnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面から第1n+層の一部分を除去するステップと、
d)第2n+層のnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面にnドーパントをドープして、第2n+層を形成するステップと、
e)第1表面および第2表面の各々に電気接点を形成するステップと、
を含む、光起電力セルを製造する方法を提供する。
a)pドーパント(例えばホウ素)を含む膜を半導体基板(例えばシリコン)の第2表面に被着するステップと、
b)(例えば第1表面を液体で洗浄することによって)基板の第1表面および基板の縁からpドーパントを含む膜を除去するステップと、
c)nドーパント(例えばリン、ヒ素)を含む膜を第1表面に被着するステップと、
d)基板の第1表面における第1n+層および第2表面におけるp+層を同時に形成するために、基板を加熱するステップと、
e)基板の第1表面に残存するnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面から第1n+層の一部分を除去するステップと、
f)第1表面および第2表面の各々に電気接点を形成し、
それによって光起電力セルを製造するステップと、
を含む、光起電力セルを製造する方法を提供する。
a)半導体基板の第2表面にpドーパントを含む膜を被着するステップと、
b)(例えば第1表面を液体で洗浄することによって)基板の第1表面および基板の縁からpドーパントを含む膜を除去するステップと、
c)nドーパントを含む膜を第1表面に被着するステップと、
d)基板の第1表面における第1n+層および第2表面におけるp+層を同時に形成するために、基板を加熱するステップと、
e)基板の第1表面に残存するnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面から第1n+層の一部分を除去するステップと、
f)第2n+層のnドーパントの濃度が第1表面全体で不等になるように、基板の第1表面にnドーパントをドープして、第2n+層を形成するステップと、
g)第1表面および第2表面の各々に電気接点を形成し、
それによって光起電力セルを製造するステップと、
を含む、光起電力セルの製造方法を提供する。
Claims (15)
- a)半導体基板の第1表面にnドーパントをドープして、前記基板に第1n+層を形成すること、
b)前記基板の第2表面にpドーパントをドープして、前記基板にp+層を形成すること、
c)前記基板の前記第1表面に残存する前記nドーパントの濃度が前記第1表面全体で不等になるように、前記基板の前記第1表面から前記第1n+層の一部分を除去すること、但し、前記除去は前記第1表面に山および谷を生成するように前記第1表面をテクスチャ加工することを含み、テクスチャ加工後に前記第1表面に残留する前記nドーパントの濃度は前記谷より前記山の方が高い、
d)第2n+層のnドーパントの濃度が前記第1表面全体で不等になるように、前記基板の前記第1表面に前記nドーパントをドープして、前記第2n+層を形成すること、但し、前記第2n+層の前記nドーパントの濃度は前記谷より前記山の方が高く、前記山の前記nドーパントの前記濃度は前記nドーパントの無作為に分布する高濃度の局所的領域を表わし、前記第2n + 層は、30〜100オームの範囲のシート抵抗を具備する、
e)前記第1表面および前記第2表面の各々に電気接点を形成し、それによって光起電力セルを製造すること
を含む、光起電力セルを製造する方法。 - 前記第1n+層および前記p+層は同時に形成され、前記nドーパントをドープして前記第1n+層を形成すること、および前記pドーパントをドープして前記p+層を形成することは、
(i)前記pドーパントを含む膜を前記第2表面に被着すること、
(ii)前記nドーパントを含む膜を前記第1表面に被着すること、および
(iii)前記基板を加熱し、それによって前記第1n+層および前記p+層を同時に形成すること
によって達成される、請求項1に記載の方法。 - 前記第1n+層および前記p+層は同時に形成され、前記nドーパントをドープして前記第1n+層を形成すること、および前記pドーパントをドープして前記p+層を形成することは、
(i)前記pドーパントを含む膜を半導体基板の第2表面に被着すること、
(ii)前記基板の第1表面および前記基板の縁から前記pドーパントを含む前記膜を除去すること、
(iii)前記nドーパントを含む膜を前記第1表面に被着すること、および
(iv)前記第1n+層および前記p+層を同時に形成するために、前記基板を加熱すること
によって達成される、請求項1に記載の方法。 - 前記第1n+層は30オーム未満のシート抵抗を具備する、請求項1〜3のいずれかに記載の方法。
- 前記第1n+層は0.4〜2μmの範囲の深さを有する、請求項1〜4のいずれかに記載の方法。
- 前記第1表面から前記n+層の前記一部分を除去することが、前記第1表面を4μmから12μmの範囲の平均深さにエッチングすることを含む、請求項1〜5のいずれかに記載の方法。
- 前記p+層を形成した後、前記第2n+層を形成する前に、反射防止コーティングを前記第2表面に被着することをさらに含む、請求項1〜6のいずれかに記載の方法。
- 請求項1〜7のいずれかに記載の方法に従って製造される光起電力セル。
- 半導体基板を備えた光起電力セルであって、前記基板がその第1表面にn+層を、かつその第2表面にp+層を含み、前記n+層がnドーパントを含み、前記p+層がpドーパントを含み、前記第1表面および前記第2表面の各々に電気接点が付着され、前記第1表面が山と谷とを含むようにテクスチャ加工され、かつ前記n+層の前記nドーパントの濃度が、前記第1表面の前記山では前記第1表面の前記谷より高く、前記山の前記nドーパントの前記濃度が、前記nドーパントの無作為に分布する高濃度の局所的領域を表わし、前記第2n + 層は、30〜100オームの範囲のシート抵抗を具備する、光起電力セル。
- 前記p+層および前記n+層は互いに接触せず、かつ前記p+層は前記第2表面の縁に到達しない、請求項9に記載の光起電力セル。
- 前記山の前記nドーパントの濃度は、前記谷の前記nドーパントの濃度の少なくとも2倍である、請求項9または10に記載の光起電力セル。
- 両面光起電力セルである、請求項8〜11のいずれかに記載の光起電力セル。
- 請求項8〜12のいずれかに記載の複数の光起電力セルを備えた光起電力アレイであって、前記複数の光起電力セルが互いに相互接続されている、光起電力アレイ。
- 請求項13に記載の光起電力アレイを備えている発電所。
- 請求項8〜12のいずれかに記載の光起電力セルを備えている電気装置。
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PCT/IB2010/055219 WO2011061693A2 (en) | 2009-11-18 | 2010-11-17 | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
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US8796060B2 (en) | 2009-11-18 | 2014-08-05 | Solar Wind Technologies, Inc. | Method of manufacturing photovoltaic cells, photovoltaic cells produced thereby and uses thereof |
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CN108352413B (zh) * | 2015-10-25 | 2021-11-02 | 索拉昂德有限公司 | 双面电池制造方法 |
CN107340785B (zh) * | 2016-12-15 | 2021-05-18 | 江苏林洋新能源科技有限公司 | 一种基于智能化控制的双面光伏电池组件跟踪方法及控制器 |
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