CN102747330B - 用阴极溅射制作方向层的方法及其实施装置 - Google Patents

用阴极溅射制作方向层的方法及其实施装置 Download PDF

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Publication number
CN102747330B
CN102747330B CN201210088822.0A CN201210088822A CN102747330B CN 102747330 B CN102747330 B CN 102747330B CN 201210088822 A CN201210088822 A CN 201210088822A CN 102747330 B CN102747330 B CN 102747330B
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CN
China
Prior art keywords
substrate
target
substrate surface
collimator
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201210088822.0A
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English (en)
Chinese (zh)
Other versions
CN102747330A (zh
Inventor
H·罗尔曼
H·弗里德利
J·韦查特
S·卡德莱克
M·杜布斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aifa Advanced Technology Co ltd
Evatec AG
Original Assignee
Oerlikon Advanced Technologies AG
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Publication of CN102747330A publication Critical patent/CN102747330A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
CN201210088822.0A 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置 Expired - Fee Related CN102747330B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US88308607P 2007-01-02 2007-01-02
US60/883,086 2007-01-02
US60/883086 2007-01-02

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN200780049142A Division CN101627146A (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置

Publications (2)

Publication Number Publication Date
CN102747330A CN102747330A (zh) 2012-10-24
CN102747330B true CN102747330B (zh) 2015-01-28

Family

ID=39144429

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201210088822.0A Expired - Fee Related CN102747330B (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置
CN200780049142A Pending CN101627146A (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN200780049142A Pending CN101627146A (zh) 2007-01-02 2007-12-24 用阴极溅射制作方向层的方法及其实施装置

Country Status (7)

Country Link
US (1) US9587306B2 (enExample)
EP (2) EP2106457A1 (enExample)
JP (1) JP5185285B2 (enExample)
KR (1) KR101761401B1 (enExample)
CN (2) CN102747330B (enExample)
TW (1) TWI457453B (enExample)
WO (1) WO2008080244A1 (enExample)

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CN103109344B (zh) 2010-07-09 2016-02-10 欧瑞康先进科技股份公司 磁控管溅射设备
CN103147055A (zh) * 2013-03-04 2013-06-12 电子科技大学 一种直列多靶磁控溅射镀膜装置
DE102014108348A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beschichtung sowie optoelektronisches Halbleiterbauteil mit einer Beschichtung
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
WO2017066448A1 (en) 2015-10-14 2017-04-20 Qorvo Us, Inc. Deposition system for growth of inclined c-axis piezoelectric material structures
US10571437B2 (en) 2015-12-15 2020-02-25 Qorvo Us, Inc. Temperature compensation and operational configuration for bulk acoustic wave resonator devices
US20200203071A1 (en) * 2017-04-27 2020-06-25 Evatec Ag Soft magnetic multilayer desposition apparatus, methods of manufacturing and magnetic multilayer
JP7471236B2 (ja) 2018-02-13 2024-04-19 エヴァテック・アーゲー マグネトロンスパッタリングのための方法および装置
US11824511B2 (en) 2018-03-21 2023-11-21 Qorvo Us, Inc. Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
US11381212B2 (en) 2018-03-21 2022-07-05 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11401601B2 (en) 2019-09-13 2022-08-02 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool

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US5584973A (en) * 1994-06-08 1996-12-17 Tel Varian Limited Processing apparatus with an invertible collimator and a processing method therefor

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Also Published As

Publication number Publication date
JP5185285B2 (ja) 2013-04-17
US9587306B2 (en) 2017-03-07
EP2106457A1 (de) 2009-10-07
US20090134011A1 (en) 2009-05-28
KR101761401B1 (ko) 2017-07-25
CN102747330A (zh) 2012-10-24
KR20090096617A (ko) 2009-09-11
WO2008080244A1 (de) 2008-07-10
EP2463401B1 (de) 2013-07-24
JP2010514940A (ja) 2010-05-06
EP2463401A1 (de) 2012-06-13
TWI457453B (zh) 2014-10-21
CN101627146A (zh) 2010-01-13
TW200848533A (en) 2008-12-16

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C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
ASS Succession or assignment of patent right

Owner name: OERLIKON ADVANCED TECHNOLOGIES AG

Free format text: FORMER OWNER: OC OERLIKON BALZERS AG

Effective date: 20140731

C41 Transfer of patent application or patent right or utility model
TA01 Transfer of patent application right

Effective date of registration: 20140731

Address after: Liechtenstein Barr Che J

Applicant after: OC OERLIKON BALZERS AG

Address before: Liechtenstein Barr Che J

Applicant before: OC Oerlikon Balzers AG

C14 Grant of patent or utility model
GR01 Patent grant
CP01 Change in the name or title of a patent holder
CP01 Change in the name or title of a patent holder

Address after: Liechtenstein Barr Che J

Patentee after: AIFA advanced technology Co.,Ltd.

Address before: Liechtenstein Barr Che J

Patentee before: OC OERLIKON BALZERS AG

TR01 Transfer of patent right

Effective date of registration: 20200305

Address after: Swiss Te Lui Bach

Patentee after: EVATEC AG

Address before: Liechtenstein Barr Che J

Patentee before: AIFA advanced technology Co.,Ltd.

TR01 Transfer of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20150128