WO2008080244A1 - Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens - Google Patents

Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens Download PDF

Info

Publication number
WO2008080244A1
WO2008080244A1 PCT/CH2007/000647 CH2007000647W WO2008080244A1 WO 2008080244 A1 WO2008080244 A1 WO 2008080244A1 CH 2007000647 W CH2007000647 W CH 2007000647W WO 2008080244 A1 WO2008080244 A1 WO 2008080244A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate surface
target
collimator
plates
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CH2007/000647
Other languages
German (de)
English (en)
French (fr)
Inventor
Hartmut Rohrmann
Hanspeter Friedli
Jürgen WEICHART
Stanislav Kadlec
Martin Dubs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
OC Oerlikon Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OC Oerlikon Balzers AG filed Critical OC Oerlikon Balzers AG
Priority to EP07845644A priority Critical patent/EP2106457A1/de
Priority to JP2009544347A priority patent/JP5185285B2/ja
Priority to KR1020097013819A priority patent/KR101761401B1/ko
Publication of WO2008080244A1 publication Critical patent/WO2008080244A1/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Definitions

  • Performance of the device i. the density of the outgoing from the target particle flow with the position of the substrate to the target are selectively changed, such that it is particularly high in predominantly flat particle incidence parallel to the excellent direction.
  • Procedures can, as shown in the first embodiment shown in FIGS. 1-3, also be used in combination, such as there by the rotation of the basket 1 is slowed down or stopped when the substrates 3 are approximately in the middle between two adjacent targets 5. In addition, then the power can be increased.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
PCT/CH2007/000647 2007-01-02 2007-12-24 Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens Ceased WO2008080244A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
EP07845644A EP2106457A1 (de) 2007-01-02 2007-12-24 Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens
JP2009544347A JP5185285B2 (ja) 2007-01-02 2007-12-24 陰極スパッタリングによって方向性を有する層を形成する方法、および上記方法を実施するための装置
KR1020097013819A KR101761401B1 (ko) 2007-01-02 2007-12-24 음극 스퍼터링에 의해 방향성을 갖는 층을 제조하기 위한 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88308607P 2007-01-02 2007-01-02
US60/883,086 2007-01-02

Publications (1)

Publication Number Publication Date
WO2008080244A1 true WO2008080244A1 (de) 2008-07-10

Family

ID=39144429

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2007/000647 Ceased WO2008080244A1 (de) 2007-01-02 2007-12-24 Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens

Country Status (7)

Country Link
US (1) US9587306B2 (enExample)
EP (2) EP2106457A1 (enExample)
JP (1) JP5185285B2 (enExample)
KR (1) KR101761401B1 (enExample)
CN (2) CN101627146A (enExample)
TW (1) TWI457453B (enExample)
WO (1) WO2008080244A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012003994A1 (en) 2010-07-09 2012-01-12 Oc Oerlikon Balzers Ag Magnetron sputtering apparatus
US11476099B2 (en) 2018-02-13 2022-10-18 Evatec Ag Methods of and apparatus for magnetron sputtering

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103147055A (zh) * 2013-03-04 2013-06-12 电子科技大学 一种直列多靶磁控溅射镀膜装置
DE102014108348A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beschichtung sowie optoelektronisches Halbleiterbauteil mit einer Beschichtung
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
US9922809B2 (en) * 2015-10-14 2018-03-20 Qorvo Us, Inc. Deposition system for growth of inclined c-axis piezoelectric material structures
US10866216B2 (en) 2015-12-15 2020-12-15 Qorvo Biotechnologies, Llc Temperature compensation and operational configuration for bulk acoustic wave resonator devices
CN110785825B (zh) * 2017-04-27 2023-06-23 瑞士艾发科技 软磁性多层件沉积设备、制造磁性多层件的方法和磁性多层件
US11381212B2 (en) 2018-03-21 2022-07-05 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US11824511B2 (en) 2018-03-21 2023-11-21 Qorvo Us, Inc. Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11401601B2 (en) 2019-09-13 2022-08-02 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1996008817A1 (en) * 1994-09-12 1996-03-21 Materials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
US5584973A (en) 1994-06-08 1996-12-17 Tel Varian Limited Processing apparatus with an invertible collimator and a processing method therefor
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
US20030019745A1 (en) 2001-07-25 2003-01-30 Data Storage Institute. Oblique deposition apparatus
US20030062260A1 (en) 2001-08-30 2003-04-03 Anelva Corporation System for depositing a film
WO2007085549A2 (de) * 2006-01-26 2007-08-02 Siemens Aktiengesellschaft Verfahren und vorrichtung zum herstellen eines polykristallinen keramikfilms auf einem substrat, kondensatorstruktur mit dem keramikfilm und verwendung der kondensatorstruktur

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
KR970003828B1 (ko) * 1993-12-15 1997-03-22 현대전자산업 주식회사 콜리메이터
JP3545050B2 (ja) * 1994-06-28 2004-07-21 株式会社アルバック スパッタリング装置、及びスパッタリング薄膜生産方法
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5650052A (en) 1995-10-04 1997-07-22 Edelstein; Sergio Variable cell size collimator
JPH11200029A (ja) * 1998-01-13 1999-07-27 Victor Co Of Japan Ltd スパッタリング装置
US6482301B1 (en) 1998-06-04 2002-11-19 Seagate Technology, Inc. Target shields for improved magnetic properties of a recording medium
US7294242B1 (en) * 1998-08-24 2007-11-13 Applied Materials, Inc. Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
EP1297542B1 (de) 2000-07-06 2013-02-20 OC Oerlikon Balzers AG Anordnung zur ausrichtung der magnetisierungsrichtung magnetischer schichten
US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4673779B2 (ja) * 2006-03-24 2011-04-20 ダブリュディ・メディア・シンガポール・プライベートリミテッド 磁気記録媒体の製造方法及び成膜装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
US5584973A (en) 1994-06-08 1996-12-17 Tel Varian Limited Processing apparatus with an invertible collimator and a processing method therefor
WO1996008817A1 (en) * 1994-09-12 1996-03-21 Materials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
US20030019745A1 (en) 2001-07-25 2003-01-30 Data Storage Institute. Oblique deposition apparatus
US20030062260A1 (en) 2001-08-30 2003-04-03 Anelva Corporation System for depositing a film
WO2007085549A2 (de) * 2006-01-26 2007-08-02 Siemens Aktiengesellschaft Verfahren und vorrichtung zum herstellen eines polykristallinen keramikfilms auf einem substrat, kondensatorstruktur mit dem keramikfilm und verwendung der kondensatorstruktur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012003994A1 (en) 2010-07-09 2012-01-12 Oc Oerlikon Balzers Ag Magnetron sputtering apparatus
US11476099B2 (en) 2018-02-13 2022-10-18 Evatec Ag Methods of and apparatus for magnetron sputtering
US11848179B2 (en) 2018-02-13 2023-12-19 Evatec Ag Methods of and apparatus for magnetron sputtering

Also Published As

Publication number Publication date
CN101627146A (zh) 2010-01-13
EP2106457A1 (de) 2009-10-07
TWI457453B (zh) 2014-10-21
JP2010514940A (ja) 2010-05-06
KR101761401B1 (ko) 2017-07-25
JP5185285B2 (ja) 2013-04-17
CN102747330A (zh) 2012-10-24
KR20090096617A (ko) 2009-09-11
US20090134011A1 (en) 2009-05-28
CN102747330B (zh) 2015-01-28
TW200848533A (en) 2008-12-16
EP2463401A1 (de) 2012-06-13
US9587306B2 (en) 2017-03-07
EP2463401B1 (de) 2013-07-24

Similar Documents

Publication Publication Date Title
EP2463401B1 (de) Vorrichtung zur Herstellung einer gerichteten Schicht mittels Kathodenzerstäubung und Verwendung derselben
DE69613352T2 (de) Aus mehreren lagen bestehende kollimatoranordnung für verbesserte höhenunterschiedbeschichtung und gleichmässigkeit
DE69902422T2 (de) Verbessertes Ionenstrahl-Sputtering-System
DE69332009T2 (de) Zerstäusungsanlage mit magnetanordnung deren geometrie ein vorgegebenes targetprofil erzeugt
DE69427152T2 (de) Verfahren zur führung von neutral- und ladungsträgerstrahlen und eine vorrichtung zur durchführung des verfahrens
DE3506227A1 (de) Anordnung zur beschichtung von substraten mittels kathodenzerstaeubung
CH683777A5 (de) Ortsfeste Magnetron-Zerstäubungskathode für Vakuumbeschichtungsanlagen.
DE69401210T2 (de) Kollimator mit integrierter Reaktivgasverteilung für Kathodenzerstäubungsanlage
DE112009000123T5 (de) Substratauflage, mit dieser versehene Zerstäubungsvorrichtung, und Dünnschichtbildungsverfahren
EP1722005B1 (de) Verfahren zum Betreiben einer Sputterkathode mit einem Target
EP1350863B1 (de) Vorrichtung und Verfahren zum gerichteten Aufbringen von Depositionsmaterial auf ein Substrat
WO2004057642A2 (de) Vacuumarcquelle mit magnetfelderzeugungseinrichtung
DE10196150T5 (de) Magnetron-Sputtern
DE102013208771B4 (de) Verfahren zur Beeinflussung der Schichtdickenverteilung auf Substraten und Verwendung einer Vorrichtung zur Durchführung des Verfahrens
DE112006000209T5 (de) Bedampfungsvorrichtung und Filmausbildungsverfahren
WO2005038077A2 (de) Modulare vorrichtung zur beschichtung von oberflächen
DE10232179A1 (de) PVD-Verfahren und PVD-Vorrichtung
DE102012205615A1 (de) Beschichtungsverfahren, Beschichtungsanlage und optisches Element mit Beschichtung
DE102011085888A1 (de) Beschichtungsverfahren zum Sputtern von Mischschichten und Vorrichtung zum Ausführen des Verfahrens
DE102013104086B3 (de) Elektronenstrahl-Verdampfungsanordnung und Verfahren zum Elektronenstrahl-Verdampfen
EP1614138A2 (de) Hochfrequenz-plasmastrahlquelle und verfahren zum bestrahlen einer oberfläche
EP4131332A1 (de) Mehrfach-sputtertarget
DD237526A1 (de) Elektronenstrahl - linienverdampfer
EP1889280A1 (de) Sputter-magnetron
CH689558A5 (de) Bedampfungsanlage und Verdampfereinheit.

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200780049142.5

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 07845644

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 2007845644

Country of ref document: EP

ENP Entry into the national phase

Ref document number: 2009544347

Country of ref document: JP

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 1020097013819

Country of ref document: KR

NENP Non-entry into the national phase

Ref country code: DE