WO2008080244A1 - Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens - Google Patents

Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens Download PDF

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Publication number
WO2008080244A1
WO2008080244A1 PCT/CH2007/000647 CH2007000647W WO2008080244A1 WO 2008080244 A1 WO2008080244 A1 WO 2008080244A1 CH 2007000647 W CH2007000647 W CH 2007000647W WO 2008080244 A1 WO2008080244 A1 WO 2008080244A1
Authority
WO
WIPO (PCT)
Prior art keywords
substrate surface
target
collimator
plates
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/CH2007/000647
Other languages
German (de)
English (en)
French (fr)
Inventor
Hartmut Rohrmann
Hanspeter Friedli
Jürgen WEICHART
Stanislav Kadlec
Martin Dubs
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
OC Oerlikon Balzers AG
Original Assignee
OC Oerlikon Balzers AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by OC Oerlikon Balzers AG filed Critical OC Oerlikon Balzers AG
Priority to JP2009544347A priority Critical patent/JP5185285B2/ja
Priority to EP07845644A priority patent/EP2106457A1/de
Priority to KR1020097013819A priority patent/KR101761401B1/ko
Publication of WO2008080244A1 publication Critical patent/WO2008080244A1/de
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3447—Collimators, shutters, apertures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Definitions

  • Performance of the device i. the density of the outgoing from the target particle flow with the position of the substrate to the target are selectively changed, such that it is particularly high in predominantly flat particle incidence parallel to the excellent direction.
  • Procedures can, as shown in the first embodiment shown in FIGS. 1-3, also be used in combination, such as there by the rotation of the basket 1 is slowed down or stopped when the substrates 3 are approximately in the middle between two adjacent targets 5. In addition, then the power can be increased.

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Organic Chemistry (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
PCT/CH2007/000647 2007-01-02 2007-12-24 Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens Ceased WO2008080244A1 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2009544347A JP5185285B2 (ja) 2007-01-02 2007-12-24 陰極スパッタリングによって方向性を有する層を形成する方法、および上記方法を実施するための装置
EP07845644A EP2106457A1 (de) 2007-01-02 2007-12-24 Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens
KR1020097013819A KR101761401B1 (ko) 2007-01-02 2007-12-24 음극 스퍼터링에 의해 방향성을 갖는 층을 제조하기 위한 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US88308607P 2007-01-02 2007-01-02
US60/883,086 2007-01-02

Publications (1)

Publication Number Publication Date
WO2008080244A1 true WO2008080244A1 (de) 2008-07-10

Family

ID=39144429

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CH2007/000647 Ceased WO2008080244A1 (de) 2007-01-02 2007-12-24 Verfahren zur herstellung einer gerichteten schicht mittels kathodenzerstäubung und vorrichtung zur durchführung des verfahrens

Country Status (7)

Country Link
US (1) US9587306B2 (enExample)
EP (2) EP2106457A1 (enExample)
JP (1) JP5185285B2 (enExample)
KR (1) KR101761401B1 (enExample)
CN (2) CN102747330B (enExample)
TW (1) TWI457453B (enExample)
WO (1) WO2008080244A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012003994A1 (en) 2010-07-09 2012-01-12 Oc Oerlikon Balzers Ag Magnetron sputtering apparatus
US11476099B2 (en) 2018-02-13 2022-10-18 Evatec Ag Methods of and apparatus for magnetron sputtering

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103147055A (zh) * 2013-03-04 2013-06-12 电子科技大学 一种直列多靶磁控溅射镀膜装置
DE102014108348A1 (de) * 2014-06-13 2015-12-17 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung einer Beschichtung sowie optoelektronisches Halbleiterbauteil mit einer Beschichtung
US9887073B2 (en) * 2015-02-13 2018-02-06 Taiwan Semiconductor Manufacturing Co., Ltd. Physical vapor deposition system and physical vapor depositing method using the same
US10541662B2 (en) 2015-10-14 2020-01-21 Qorvo Us, Inc. Methods for fabricating acoustic structure with inclined c-axis piezoelectric bulk and crystalline seed layers
WO2017106489A2 (en) 2015-12-15 2017-06-22 Qorvo Us, Inc. Temperature compensation and operational configuration for bulk acoustic wave resonator devices
JP2020517832A (ja) * 2017-04-27 2020-06-18 エヴァテック・アーゲー 軟磁性多層堆積装置、製造の方法、および磁性多層体
US11824511B2 (en) 2018-03-21 2023-11-21 Qorvo Us, Inc. Method for manufacturing piezoelectric bulk layers with tilted c-axis orientation
US11381212B2 (en) 2018-03-21 2022-07-05 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US10998209B2 (en) 2019-05-31 2021-05-04 Applied Materials, Inc. Substrate processing platforms including multiple processing chambers
US11401601B2 (en) 2019-09-13 2022-08-02 Qorvo Us, Inc. Piezoelectric bulk layers with tilted c-axis orientation and methods for making the same
US12080571B2 (en) 2020-07-08 2024-09-03 Applied Materials, Inc. Substrate processing module and method of moving a workpiece
US11749542B2 (en) 2020-07-27 2023-09-05 Applied Materials, Inc. Apparatus, system, and method for non-contact temperature monitoring of substrate supports
US11817331B2 (en) 2020-07-27 2023-11-14 Applied Materials, Inc. Substrate holder replacement with protective disk during pasting process
US11600507B2 (en) 2020-09-09 2023-03-07 Applied Materials, Inc. Pedestal assembly for a substrate processing chamber
US11610799B2 (en) 2020-09-18 2023-03-21 Applied Materials, Inc. Electrostatic chuck having a heating and chucking capabilities
US12195314B2 (en) 2021-02-02 2025-01-14 Applied Materials, Inc. Cathode exchange mechanism to improve preventative maintenance time for cluster system
US11674227B2 (en) 2021-02-03 2023-06-13 Applied Materials, Inc. Symmetric pump down mini-volume with laminar flow cavity gas injection for high and low pressure
US12002668B2 (en) 2021-06-25 2024-06-04 Applied Materials, Inc. Thermal management hardware for uniform temperature control for enhanced bake-out for cluster tool

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WO1996008817A1 (en) * 1994-09-12 1996-03-21 Materials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
US5584973A (en) 1994-06-08 1996-12-17 Tel Varian Limited Processing apparatus with an invertible collimator and a processing method therefor
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
US20030019745A1 (en) 2001-07-25 2003-01-30 Data Storage Institute. Oblique deposition apparatus
US20030062260A1 (en) 2001-08-30 2003-04-03 Anelva Corporation System for depositing a film
WO2007085549A2 (de) * 2006-01-26 2007-08-02 Siemens Aktiengesellschaft Verfahren und vorrichtung zum herstellen eines polykristallinen keramikfilms auf einem substrat, kondensatorstruktur mit dem keramikfilm und verwendung der kondensatorstruktur

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US5415753A (en) * 1993-07-22 1995-05-16 Materials Research Corporation Stationary aperture plate for reactive sputter deposition
KR970003828B1 (ko) * 1993-12-15 1997-03-22 현대전자산업 주식회사 콜리메이터
JP3545050B2 (ja) * 1994-06-28 2004-07-21 株式会社アルバック スパッタリング装置、及びスパッタリング薄膜生産方法
US5885425A (en) * 1995-06-06 1999-03-23 International Business Machines Corporation Method for selective material deposition on one side of raised or recessed features
US5650052A (en) 1995-10-04 1997-07-22 Edelstein; Sergio Variable cell size collimator
JPH11200029A (ja) * 1998-01-13 1999-07-27 Victor Co Of Japan Ltd スパッタリング装置
US6482301B1 (en) 1998-06-04 2002-11-19 Seagate Technology, Inc. Target shields for improved magnetic properties of a recording medium
US7294242B1 (en) * 1998-08-24 2007-11-13 Applied Materials, Inc. Collimated and long throw magnetron sputtering of nickel/iron films for magnetic recording head applications
JP2004502314A (ja) 2000-07-06 2004-01-22 ユナキス・バルツェルス・アクチェンゲゼルシャフト 磁性被膜層の磁化方向を整列するための装置
US6743340B2 (en) 2002-02-05 2004-06-01 Applied Materials, Inc. Sputtering of aligned magnetic materials and magnetic dipole ring used therefor
JP2007273490A (ja) * 2004-03-30 2007-10-18 Renesas Technology Corp 半導体集積回路装置の製造方法
JP4673779B2 (ja) * 2006-03-24 2011-04-20 ダブリュディ・メディア・シンガポール・プライベートリミテッド 磁気記録媒体の製造方法及び成膜装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5958193A (en) * 1994-02-01 1999-09-28 Vlsi Technology, Inc. Sputter deposition with mobile collimator
US5584973A (en) 1994-06-08 1996-12-17 Tel Varian Limited Processing apparatus with an invertible collimator and a processing method therefor
WO1996008817A1 (en) * 1994-09-12 1996-03-21 Materials Research Corporation Modification and selection of the magnetic properties of magnetic recording media through selective control of the crystal texture of the recording layer
US20030019745A1 (en) 2001-07-25 2003-01-30 Data Storage Institute. Oblique deposition apparatus
US20030062260A1 (en) 2001-08-30 2003-04-03 Anelva Corporation System for depositing a film
WO2007085549A2 (de) * 2006-01-26 2007-08-02 Siemens Aktiengesellschaft Verfahren und vorrichtung zum herstellen eines polykristallinen keramikfilms auf einem substrat, kondensatorstruktur mit dem keramikfilm und verwendung der kondensatorstruktur

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012003994A1 (en) 2010-07-09 2012-01-12 Oc Oerlikon Balzers Ag Magnetron sputtering apparatus
US11476099B2 (en) 2018-02-13 2022-10-18 Evatec Ag Methods of and apparatus for magnetron sputtering
US11848179B2 (en) 2018-02-13 2023-12-19 Evatec Ag Methods of and apparatus for magnetron sputtering

Also Published As

Publication number Publication date
TW200848533A (en) 2008-12-16
CN102747330A (zh) 2012-10-24
KR101761401B1 (ko) 2017-07-25
US20090134011A1 (en) 2009-05-28
EP2463401A1 (de) 2012-06-13
JP5185285B2 (ja) 2013-04-17
EP2463401B1 (de) 2013-07-24
KR20090096617A (ko) 2009-09-11
US9587306B2 (en) 2017-03-07
JP2010514940A (ja) 2010-05-06
CN101627146A (zh) 2010-01-13
TWI457453B (zh) 2014-10-21
CN102747330B (zh) 2015-01-28
EP2106457A1 (de) 2009-10-07

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