CN102741462A - 用于在定向固化炉中使用的坩埚 - Google Patents

用于在定向固化炉中使用的坩埚 Download PDF

Info

Publication number
CN102741462A
CN102741462A CN2011800077648A CN201180007764A CN102741462A CN 102741462 A CN102741462 A CN 102741462A CN 2011800077648 A CN2011800077648 A CN 2011800077648A CN 201180007764 A CN201180007764 A CN 201180007764A CN 102741462 A CN102741462 A CN 102741462A
Authority
CN
China
Prior art keywords
crucible
base
plate
directional
melt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN2011800077648A
Other languages
English (en)
Chinese (zh)
Inventor
R·J·菲利普斯
B·德维拉帕里
S·L·金贝尔
A·J·德什潘德
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SunEdison Products Singapore Pte Ltd
Original Assignee
SunEdison Products Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SunEdison Products Singapore Pte Ltd filed Critical SunEdison Products Singapore Pte Ltd
Publication of CN102741462A publication Critical patent/CN102741462A/zh
Pending legal-status Critical Current

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
CN2011800077648A 2010-01-28 2011-01-28 用于在定向固化炉中使用的坩埚 Pending CN102741462A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29913310P 2010-01-28 2010-01-28
US61/299,133 2010-01-28
PCT/IB2011/050392 WO2011092659A1 (en) 2010-01-28 2011-01-28 Crucible for use in a directional solidification furnace

Publications (1)

Publication Number Publication Date
CN102741462A true CN102741462A (zh) 2012-10-17

Family

ID=43858054

Family Applications (1)

Application Number Title Priority Date Filing Date
CN2011800077648A Pending CN102741462A (zh) 2010-01-28 2011-01-28 用于在定向固化炉中使用的坩埚

Country Status (7)

Country Link
US (1) US20110180229A1 (enExample)
EP (1) EP2529043A1 (enExample)
JP (1) JP2013518028A (enExample)
KR (1) KR20120128643A (enExample)
CN (1) CN102741462A (enExample)
TW (1) TW201202491A (enExample)
WO (1) WO2011092659A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201245474A (en) * 2011-05-12 2012-11-16 Hon Hai Prec Ind Co Ltd Evaporation source device and a coating method using the same
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
DE102012202589A1 (de) * 2012-02-21 2013-08-22 Evonik Degussa Gmbh Einsatz für einen Schmelztiegel
CN102808214B (zh) * 2012-08-30 2015-06-10 天威新能源控股有限公司 一种用于铸锭坩埚的复合式护板
DE102014102980B4 (de) * 2014-03-06 2017-12-21 Ald Vacuum Technologies Gmbh Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt
US11377751B2 (en) 2020-02-20 2022-07-05 Globalwafers Co., Ltd. Crucible molds
JP7585333B2 (ja) 2020-02-20 2024-11-18 グローバルウェーハズ カンパニー リミテッド ユニット化るつぼアセンブリを形成するための方法、るつぼ鋳型、およびユニット化るつぼ
US11326271B2 (en) 2020-02-20 2022-05-10 Globalwafers Co., Ltd. Methods for forming a unitized crucible assembly

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015657A (en) * 1975-09-03 1977-04-05 Dmitry Andreevich Petrov Device for making single-crystal products
US4243471A (en) * 1978-05-02 1981-01-06 International Business Machines Corporation Method for directional solidification of silicon
US4256530A (en) * 1978-12-07 1981-03-17 Crystal Systems Inc. Crystal growing
GB2041236A (en) * 1979-01-18 1980-09-10 Crystal Syst Method and apparatus for growing crystals
GB2084978B (en) * 1980-09-26 1984-07-04 Crystal Syst Growing silicon ingots
US4764195A (en) * 1987-05-20 1988-08-16 Corning Glass Works Method of forming reinforced glass composites
DE4022389C2 (de) * 1990-07-13 1995-06-08 Leybold Ag Schmelz- und Gießofen
DE4236827A1 (de) * 1992-10-30 1994-05-05 Wacker Chemitronic Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur
JPH11138512A (ja) * 1997-11-14 1999-05-25 Phoenix:Kk 箱およびその製造方法並びにその製造装置
US6200385B1 (en) * 2000-03-20 2001-03-13 Carl Francis Swinehart Crucible for growing macrocrystals
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
JP2006282495A (ja) * 2005-03-10 2006-10-19 Kyocera Corp 鋳型及びこれを用いた多結晶シリコンインゴットの製造方法
FR2895749B1 (fr) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions Dispositif et procede de fabrication d'un bloc de materiau cristallin
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
WO2007148985A1 (en) * 2006-06-23 2007-12-27 Rec Scanwafer As Device and method for production of semiconductor grade silicon
CN101479410A (zh) * 2006-06-23 2009-07-08 Rec斯坎沃佛股份有限公司 用于使半导体级多晶硅锭料定向凝固的方法和坩埚
JP5380442B2 (ja) * 2007-07-20 2014-01-08 エイエムジー・アイデアルキャスト・ソーラー・コーポレーション 種結晶から鋳造シリコンを製造するための方法および装置

Also Published As

Publication number Publication date
US20110180229A1 (en) 2011-07-28
EP2529043A1 (en) 2012-12-05
JP2013518028A (ja) 2013-05-20
WO2011092659A1 (en) 2011-08-04
KR20120128643A (ko) 2012-11-27
TW201202491A (en) 2012-01-16

Similar Documents

Publication Publication Date Title
CN102741462A (zh) 用于在定向固化炉中使用的坩埚
CN100429333C (zh) 用于制备结晶物质块的设备用的熔炉及其制备方法
JP5656623B2 (ja) ＳｉＣ単結晶の製造装置および製造方法
CN102888650A (zh) 保持固液界面水平的多晶硅铸锭炉坩埚保温装置
CN104294360B (zh) 一种保温铸锭炉以及使用保温铸锭炉铸锭的方法
CN204373386U (zh) 一种可防粘渣的感应炉用复合式坩埚
CN103917699A (zh) 从具有非均匀热阻的坩埚制造晶体材料的装置
TWI628145B (zh) 用於純化矽之覆蓋助熔劑及方法
CN105803525A (zh) 一种坩埚及坩埚制作方法
TWI596066B (zh) 用於隔熱方向性固化加熱爐之系統
JP4480357B2 (ja) 板状シリコン製造装置
JP4546657B2 (ja) ステーブクーラーの冷却管
CN207483905U (zh) 一种用于高效多晶硅铸锭炉侧部隔热保温结构
CN111231064B (zh) 浇铸件保温方法及保温装置
JP4365669B2 (ja) シリコン鋳造用鋳型
JPS59174265A (ja) セラミックシェル鋳型による一方向凝固法
CN107699947A (zh) 一种适用于g8高效多晶铸锭的热场结构
JP4484501B2 (ja) シリコン鋳造用装置
TWM514558U (zh) 冷卻盤
JP6522963B2 (ja) 鋳造用装置およびインゴットの製造方法
TW201508102A (zh) 側向移動加熱之長晶爐構造
TW201400780A (zh) 冷卻盤
TWI439584B (zh) 定向凝固鑄造裝置
CN103628125A (zh) 一种多晶硅铸锭炉和多晶硅铸锭方法
TWM481240U (zh) 用於晶碇鑄造爐的冷卻裝置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C02 Deemed withdrawal of patent application after publication (patent law 2001)
WD01 Invention patent application deemed withdrawn after publication

Application publication date: 20121017