TW201202491A - Crucible for use in a directional solidification furnace - Google Patents

Crucible for use in a directional solidification furnace Download PDF

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Publication number
TW201202491A
TW201202491A TW100103495A TW100103495A TW201202491A TW 201202491 A TW201202491 A TW 201202491A TW 100103495 A TW100103495 A TW 100103495A TW 100103495 A TW100103495 A TW 100103495A TW 201202491 A TW201202491 A TW 201202491A
Authority
TW
Taiwan
Prior art keywords
base
crucible
directional solidification
thermal conductivity
plate
Prior art date
Application number
TW100103495A
Other languages
English (en)
Chinese (zh)
Inventor
Richard J Phillips
Balaji Devulapalli
Steven L Kimbel
Aditya J Deshpande
Original Assignee
Memc Singapore Pte Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memc Singapore Pte Ltd filed Critical Memc Singapore Pte Ltd
Publication of TW201202491A publication Critical patent/TW201202491A/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
TW100103495A 2010-01-28 2011-01-28 Crucible for use in a directional solidification furnace TW201202491A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US29913310P 2010-01-28 2010-01-28

Publications (1)

Publication Number Publication Date
TW201202491A true TW201202491A (en) 2012-01-16

Family

ID=43858054

Family Applications (1)

Application Number Title Priority Date Filing Date
TW100103495A TW201202491A (en) 2010-01-28 2011-01-28 Crucible for use in a directional solidification furnace

Country Status (7)

Country Link
US (1) US20110180229A1 (enExample)
EP (1) EP2529043A1 (enExample)
JP (1) JP2013518028A (enExample)
KR (1) KR20120128643A (enExample)
CN (1) CN102741462A (enExample)
TW (1) TW201202491A (enExample)
WO (1) WO2011092659A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201245474A (en) * 2011-05-12 2012-11-16 Hon Hai Prec Ind Co Ltd Evaporation source device and a coating method using the same
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
DE102012202589A1 (de) * 2012-02-21 2013-08-22 Evonik Degussa Gmbh Einsatz für einen Schmelztiegel
CN102808214B (zh) * 2012-08-30 2015-06-10 天威新能源控股有限公司 一种用于铸锭坩埚的复合式护板
DE102014102980B4 (de) * 2014-03-06 2017-12-21 Ald Vacuum Technologies Gmbh Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt
US11377751B2 (en) 2020-02-20 2022-07-05 Globalwafers Co., Ltd. Crucible molds
US11326271B2 (en) 2020-02-20 2022-05-10 Globalwafers Co., Ltd. Methods for forming a unitized crucible assembly
TW202444981A (zh) 2020-02-20 2024-11-16 環球晶圓股份有限公司 坩堝模具以及形成套裝坩堝組件之方法

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015657A (en) * 1975-09-03 1977-04-05 Dmitry Andreevich Petrov Device for making single-crystal products
US4243471A (en) * 1978-05-02 1981-01-06 International Business Machines Corporation Method for directional solidification of silicon
US4256530A (en) * 1978-12-07 1981-03-17 Crystal Systems Inc. Crystal growing
GB2041236A (en) * 1979-01-18 1980-09-10 Crystal Syst Method and apparatus for growing crystals
GB2084978B (en) * 1980-09-26 1984-07-04 Crystal Syst Growing silicon ingots
US4764195A (en) * 1987-05-20 1988-08-16 Corning Glass Works Method of forming reinforced glass composites
DE4022389C2 (de) * 1990-07-13 1995-06-08 Leybold Ag Schmelz- und Gießofen
DE4236827A1 (de) * 1992-10-30 1994-05-05 Wacker Chemitronic Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur
JPH11138512A (ja) * 1997-11-14 1999-05-25 Phoenix:Kk 箱およびその製造方法並びにその製造装置
US6200385B1 (en) * 2000-03-20 2001-03-13 Carl Francis Swinehart Crucible for growing macrocrystals
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
JP2006282495A (ja) * 2005-03-10 2006-10-19 Kyocera Corp 鋳型及びこれを用いた多結晶シリコンインゴットの製造方法
FR2895749B1 (fr) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions Dispositif et procede de fabrication d'un bloc de materiau cristallin
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
US20090314198A1 (en) * 2006-06-23 2009-12-24 Rec Scanwafer As Device and method for production of semiconductor grade silicon
US20090208400A1 (en) * 2006-06-23 2009-08-20 Stein Julsrud Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots
CN101755075A (zh) * 2007-07-20 2010-06-23 Bp北美公司 从籽晶制造浇铸硅的方法和装置

Also Published As

Publication number Publication date
KR20120128643A (ko) 2012-11-27
WO2011092659A1 (en) 2011-08-04
CN102741462A (zh) 2012-10-17
EP2529043A1 (en) 2012-12-05
US20110180229A1 (en) 2011-07-28
JP2013518028A (ja) 2013-05-20

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