JP6457549B2 - 材料結晶化のためのハイブリッドるつぼ - Google Patents
材料結晶化のためのハイブリッドるつぼ Download PDFInfo
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- JP6457549B2 JP6457549B2 JP2016555671A JP2016555671A JP6457549B2 JP 6457549 B2 JP6457549 B2 JP 6457549B2 JP 2016555671 A JP2016555671 A JP 2016555671A JP 2016555671 A JP2016555671 A JP 2016555671A JP 6457549 B2 JP6457549 B2 JP 6457549B2
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- 239000000463 material Substances 0.000 title claims description 76
- 238000002425 crystallisation Methods 0.000 title claims description 18
- 230000008025 crystallization Effects 0.000 title claims description 18
- 230000001681 protective effect Effects 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 33
- 239000002994 raw material Substances 0.000 claims description 28
- 239000000155 melt Substances 0.000 claims description 20
- 230000008569 process Effects 0.000 claims description 16
- 239000007787 solid Substances 0.000 claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 14
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- 239000010703 silicon Substances 0.000 claims description 14
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 239000002178 crystalline material Substances 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 16
- 239000013078 crystal Substances 0.000 description 14
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 9
- 238000010309 melting process Methods 0.000 description 7
- 238000007711 solidification Methods 0.000 description 7
- 230000008023 solidification Effects 0.000 description 7
- 238000000576 coating method Methods 0.000 description 6
- 238000011109 contamination Methods 0.000 description 6
- 230000006378 damage Effects 0.000 description 6
- 239000000919 ceramic Substances 0.000 description 5
- 239000011248 coating agent Substances 0.000 description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 238000005429 filling process Methods 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 229910052574 oxide ceramic Inorganic materials 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910021486 amorphous silicon dioxide Inorganic materials 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007713 directional crystallization Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005713 exacerbation Effects 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000002648 laminated material Substances 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 229910052752 metalloid Inorganic materials 0.000 description 1
- 150000002738 metalloids Chemical class 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/002—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
- C30B35/002—Crucibles or containers
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
A.本発明によるハイブリッドるつぼに原材料を充填するステップと、
B.材料が上から下へと溶融するように入熱するステップと、
C.溶融物を凝固させて結晶質製品を形成するステップとを含み、
プロセス全体を通して、未溶融材料の画分(Anteil)が底板上に留まる、プロセスが提供される。
A.保護フレームを底板上に設置するステップと、
B.任意に、保護フレーム内で底板上に種材料を充填するステップと、
C.原材料を種材料上に充填するステップと、
D.保護フレームを取り除くステップと、
E.材料が上から下へと溶融するように入熱するステップと、
F.溶融物を凝固させて結晶質製品を形成するステップとを含み、
プロセス全体を通して、未溶融材料の画分が底板上に留まり、原材料を溶融する時点よりも前にフレームが底板上に設置される。
2 フレーム
3 溶融物
4 固体底部層
5 結晶成長の方向
6 結晶化前線
Claims (14)
- 材料の結晶化のための、底板(1)およびフレーム(2)を備えるハイブリッドるつぼであって、
前記底板(1)および前記フレーム(2)が異なる材料で作られ、
前記底板(1)の熱伝導率が前記フレーム(2)の熱伝導率よりも高く、
前記るつぼの使用の前に、前記フレーム(2)と前記底板(1)との間の固定接続を確立することなく、前記フレーム(2)が前記底板(1)上に設置され、
前記るつぼが、溶融物(3)の衝撃に対して前記底板(1)を保護し、結晶化される前記材料と同材料でなる固体底部層を、前記底板(1)の上に形成するように設計されている
ことを特徴とするハイブリッドるつぼ。 - 前記底板(1)が、前記フレーム(2)の少なくとも1.1倍の熱伝導率を有する、請求項1に記載のハイブリッドるつぼ。
- 前記底板(1)が、材料内に熱伝導率の特異的分布を有する傾斜材料で作られる、請求項1または2に記載のハイブリッドるつぼ。
- 前記底板(1)が、局所的に異なる熱伝導率を有しており、それによって局所的に異なる熱流が確立される、請求項1から3のいずれか一項に記載のハイブリッドるつぼ。
- 前記フレーム(2)が、0℃で5W/(m・K)以下の熱伝導率を有する、請求項1から4のいずれか一項に記載のハイブリッドるつぼ。
- 前記底板(1)が、0℃で少なくとも40W/(m・K)の熱伝導率を有する、請求項1から5のいずれか一項に記載のハイブリッドるつぼ。
- 請求項1から6のいずれか一項に記載のハイブリッドるつぼを使用した結晶質材料を作製する方法。
- a.請求項1から6のいずれか一項に記載のハイブリッドるつぼに原材料を充填するステップと、
b.前記原材料が上から下へと溶融するように、前記ハイブリッドるつぼに入熱するステップと、
c.溶融物を方向性凝固させて結晶質製品を形成するステップとを含み、
プロセス全体を通して、未溶融材料の画分が前記底板上に留まる、結晶質材料を作製する方法。 - 前記原材料がシリコン原材料である請求項8に記載の方法。
- 前記プロセス中、液化されないかまたは完全には液化されず、前記底板上に固体底部層または未溶融材料の画分として留まるように選択される、前記原材料と同じ材料から成る種材料を導入するステップを、
前記ステップa)の前に、さらに含む、請求項8または9に記載の方法。 - 前記充填ステップの前に、保護フレームが前記底板上に配置される、請求項8から10のいずれか一項に記載の方法。
- 前記フレームの配置の前に、前記保護フレームが前記底板上に設置される、請求項11に記載の方法。
- 前記入熱の前に、前記保護フレームが取り除かれる、請求項11または12に記載の方法。
- 前記結晶質材料の除去後に前記フレームが交換され、次に新しいフレームを用いて前記方法が再び実施される、請求項8から13のいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102014102980.1A DE102014102980B4 (de) | 2014-03-06 | 2014-03-06 | Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt |
DE102014102980.1 | 2014-03-06 | ||
PCT/EP2015/054762 WO2015132399A1 (de) | 2014-03-06 | 2015-03-06 | Hybridtiegel zur kristallisation von materialien |
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JP2017507108A JP2017507108A (ja) | 2017-03-16 |
JP6457549B2 true JP6457549B2 (ja) | 2019-01-23 |
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Country Status (9)
Country | Link |
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US (1) | US10100427B2 (ja) |
EP (1) | EP3114259B1 (ja) |
JP (1) | JP6457549B2 (ja) |
CN (1) | CN106133207A (ja) |
CA (1) | CA2941189A1 (ja) |
DE (1) | DE102014102980B4 (ja) |
MX (1) | MX2016011288A (ja) |
TW (1) | TWI668339B (ja) |
WO (1) | WO2015132399A1 (ja) |
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CN1914119B (zh) * | 2004-01-29 | 2010-09-29 | 京瓷株式会社 | 铸模及其形成方法,和采用此铸模的多晶硅基板的制造方法 |
JP2006282495A (ja) | 2005-03-10 | 2006-10-19 | Kyocera Corp | 鋳型及びこれを用いた多結晶シリコンインゴットの製造方法 |
KR20090024797A (ko) * | 2006-06-23 | 2009-03-09 | 알이씨 스캔웨이퍼 에이에스 | 재사용가능한 도가니 및 이를 제조하는 방법 |
FR2918675B1 (fr) * | 2007-07-10 | 2009-08-28 | Commissariat Energie Atomique | Dispositif de fabrication d'un bloc de materiau cristallin avec modulation de la conductivite thermique. |
DE102009048741A1 (de) * | 2009-03-20 | 2010-09-30 | Access E.V. | Tiegel zum Schmelzen und Kristallisieren eines Metalls, eines Halbleiters oder einer Metalllegierung, Bauteil für einen Tiegelgrundkörper eines Tiegels und Verfahren zum Herstellen eines Bauteils |
DE102009015236B4 (de) * | 2009-04-01 | 2015-03-05 | H.C. Starck Gmbh | Tiegel und seine Verwendung |
JP5446681B2 (ja) * | 2009-09-30 | 2014-03-19 | 富士電機株式会社 | SiC単結晶製造方法 |
US20110180229A1 (en) * | 2010-01-28 | 2011-07-28 | Memc Singapore Pte. Ltd. (Uen200614794D) | Crucible For Use In A Directional Solidification Furnace |
CN102859049B (zh) * | 2010-03-30 | 2016-01-20 | 瑞科斯太阳能源私人有限公司 | 制造半导体级硅晶锭的方法、可再使用的坩埚及其制造方法 |
CN102383184A (zh) * | 2010-09-01 | 2012-03-21 | 赵钧永 | 晶体及其铸造方法和装置 |
DE102011052016A1 (de) * | 2011-07-21 | 2013-01-24 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Bausatz für einen Schmelztiegel, Schmelztiegel und Verfahren zur Herstellung eines Schmelztiegels |
CN102268724B (zh) * | 2011-07-28 | 2014-04-16 | 英利能源(中国)有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
US20150086464A1 (en) * | 2012-01-27 | 2015-03-26 | Gtat Corporation | Method of producing monocrystalline silicon |
DE102012102597B4 (de) | 2012-03-26 | 2020-05-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines gerichtet erstarrten Materialkörpers aus Silizium oder Germanium, Wafer aus Silizium oder Germanium, sowie Verwendungen hiervon |
US9562304B2 (en) | 2012-04-01 | 2017-02-07 | Jiang Xi Sai Wei Ldk Solar Hi-Tech Co., Ltd. | Polycrystalline silicon ingot, preparation method thereof, and polycrystalline silicon wafer |
JP2015020941A (ja) | 2013-07-23 | 2015-02-02 | 日本坩堝株式会社 | シリコン鋳造用容器 |
CN203393257U (zh) * | 2013-08-16 | 2014-01-15 | 天威新能源控股有限公司 | 一种多导热底板高效多晶硅锭铸锭炉 |
CN103482632A (zh) * | 2013-09-16 | 2014-01-01 | 青岛隆盛晶硅科技有限公司 | 应用于多晶硅定向凝固提纯的组合式坩埚 |
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- 2014-03-06 DE DE102014102980.1A patent/DE102014102980B4/de active Active
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2015
- 2015-03-06 CA CA2941189A patent/CA2941189A1/en not_active Abandoned
- 2015-03-06 EP EP15708218.1A patent/EP3114259B1/de active Active
- 2015-03-06 MX MX2016011288A patent/MX2016011288A/es unknown
- 2015-03-06 CN CN201580012185.0A patent/CN106133207A/zh active Pending
- 2015-03-06 JP JP2016555671A patent/JP6457549B2/ja active Active
- 2015-03-06 WO PCT/EP2015/054762 patent/WO2015132399A1/de active Application Filing
- 2015-03-06 US US15/123,284 patent/US10100427B2/en active Active
- 2015-03-06 TW TW104107144A patent/TWI668339B/zh active
Also Published As
Publication number | Publication date |
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CN106133207A (zh) | 2016-11-16 |
JP2017507108A (ja) | 2017-03-16 |
US20170058426A1 (en) | 2017-03-02 |
TW201600653A (zh) | 2016-01-01 |
EP3114259B1 (de) | 2023-07-12 |
MX2016011288A (es) | 2017-04-27 |
US10100427B2 (en) | 2018-10-16 |
TWI668339B (zh) | 2019-08-11 |
EP3114259A1 (de) | 2017-01-11 |
DE102014102980B4 (de) | 2017-12-21 |
WO2015132399A1 (de) | 2015-09-11 |
DE102014102980A1 (de) | 2015-09-10 |
CA2941189A1 (en) | 2015-09-11 |
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