JP2013518028A - 方向性凝固炉に使用するためのルツボ - Google Patents

方向性凝固炉に使用するためのルツボ Download PDF

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Publication number
JP2013518028A
JP2013518028A JP2012550554A JP2012550554A JP2013518028A JP 2013518028 A JP2013518028 A JP 2013518028A JP 2012550554 A JP2012550554 A JP 2012550554A JP 2012550554 A JP2012550554 A JP 2012550554A JP 2013518028 A JP2013518028 A JP 2013518028A
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JP
Japan
Prior art keywords
crucible
directional solidification
solidification furnace
plate
melt
Prior art date
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Pending
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JP2012550554A
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English (en)
Japanese (ja)
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JP2013518028A5 (enExample
Inventor
リチャード・ジェイ・フィリップス
バラジ・デブラパリ
スティーブン・エル・キンベル
アディトヤ・ジェイ・デシュパンデ
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SunEdison Products Singapore Pte Ltd
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SunEdison Products Singapore Pte Ltd
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Publication date
Application filed by SunEdison Products Singapore Pte Ltd filed Critical SunEdison Products Singapore Pte Ltd
Publication of JP2013518028A publication Critical patent/JP2013518028A/ja
Publication of JP2013518028A5 publication Critical patent/JP2013518028A5/ja
Pending legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
JP2012550554A 2010-01-28 2011-01-28 方向性凝固炉に使用するためのルツボ Pending JP2013518028A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US29913310P 2010-01-28 2010-01-28
US61/299,133 2010-01-28
PCT/IB2011/050392 WO2011092659A1 (en) 2010-01-28 2011-01-28 Crucible for use in a directional solidification furnace

Publications (2)

Publication Number Publication Date
JP2013518028A true JP2013518028A (ja) 2013-05-20
JP2013518028A5 JP2013518028A5 (enExample) 2014-03-13

Family

ID=43858054

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2012550554A Pending JP2013518028A (ja) 2010-01-28 2011-01-28 方向性凝固炉に使用するためのルツボ

Country Status (7)

Country Link
US (1) US20110180229A1 (enExample)
EP (1) EP2529043A1 (enExample)
JP (1) JP2013518028A (enExample)
KR (1) KR20120128643A (enExample)
CN (1) CN102741462A (enExample)
TW (1) TW201202491A (enExample)
WO (1) WO2011092659A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201245474A (en) * 2011-05-12 2012-11-16 Hon Hai Prec Ind Co Ltd Evaporation source device and a coating method using the same
FR2979638A1 (fr) * 2011-09-05 2013-03-08 Commissariat Energie Atomique Dispositif de fabrication de materiau cristallin a partir d'un creuset a resistance thermique non uniforme
DE102012202589A1 (de) * 2012-02-21 2013-08-22 Evonik Degussa Gmbh Einsatz für einen Schmelztiegel
CN102808214B (zh) * 2012-08-30 2015-06-10 天威新能源控股有限公司 一种用于铸锭坩埚的复合式护板
DE102014102980B4 (de) * 2014-03-06 2017-12-21 Ald Vacuum Technologies Gmbh Hybridtiegel zur Kristallisation von Materialien, Verwendung des Hybridtiegels, Verfahren zur Herstellung von kristallinem Material sowie kristallines Produkt
US11377751B2 (en) 2020-02-20 2022-07-05 Globalwafers Co., Ltd. Crucible molds
US11326271B2 (en) 2020-02-20 2022-05-10 Globalwafers Co., Ltd. Methods for forming a unitized crucible assembly
TW202444981A (zh) 2020-02-20 2024-11-16 環球晶圓股份有限公司 坩堝模具以及形成套裝坩堝組件之方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11138512A (ja) * 1997-11-14 1999-05-25 Phoenix:Kk 箱およびその製造方法並びにその製造装置
JP2006282495A (ja) * 2005-03-10 2006-10-19 Kyocera Corp 鋳型及びこれを用いた多結晶シリコンインゴットの製造方法
JP2010534179A (ja) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 種結晶から鋳造シリコンを製造するための方法および装置

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4015657A (en) * 1975-09-03 1977-04-05 Dmitry Andreevich Petrov Device for making single-crystal products
US4243471A (en) * 1978-05-02 1981-01-06 International Business Machines Corporation Method for directional solidification of silicon
US4256530A (en) * 1978-12-07 1981-03-17 Crystal Systems Inc. Crystal growing
GB2041236A (en) * 1979-01-18 1980-09-10 Crystal Syst Method and apparatus for growing crystals
GB2084978B (en) * 1980-09-26 1984-07-04 Crystal Syst Growing silicon ingots
US4764195A (en) * 1987-05-20 1988-08-16 Corning Glass Works Method of forming reinforced glass composites
DE4022389C2 (de) * 1990-07-13 1995-06-08 Leybold Ag Schmelz- und Gießofen
DE4236827A1 (de) * 1992-10-30 1994-05-05 Wacker Chemitronic Vorrichtung zur Herstellung multikristalliner Halbleiter-Blöcke mit kolumnarer Kristallstruktur
US6200385B1 (en) * 2000-03-20 2001-03-13 Carl Francis Swinehart Crucible for growing macrocrystals
FR2853913B1 (fr) * 2003-04-17 2006-09-29 Apollon Solar Creuset pour un dispositif de fabrication d'un bloc de materiau cristallin et procede de fabrication
FR2895749B1 (fr) * 2006-01-04 2008-05-02 Apollon Solar Soc Par Actions Dispositif et procede de fabrication d'un bloc de materiau cristallin
EP1811064A1 (fr) * 2006-01-12 2007-07-25 Vesuvius Crucible Company Creuset pour le traitement de silicium à l'état fondu
US20090314198A1 (en) * 2006-06-23 2009-12-24 Rec Scanwafer As Device and method for production of semiconductor grade silicon
US20090208400A1 (en) * 2006-06-23 2009-08-20 Stein Julsrud Method and crucible for direct solidification of semiconductor grade multi-crystalline silicon ingots

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11138512A (ja) * 1997-11-14 1999-05-25 Phoenix:Kk 箱およびその製造方法並びにその製造装置
JP2006282495A (ja) * 2005-03-10 2006-10-19 Kyocera Corp 鋳型及びこれを用いた多結晶シリコンインゴットの製造方法
JP2010534179A (ja) * 2007-07-20 2010-11-04 ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド 種結晶から鋳造シリコンを製造するための方法および装置

Also Published As

Publication number Publication date
KR20120128643A (ko) 2012-11-27
WO2011092659A1 (en) 2011-08-04
CN102741462A (zh) 2012-10-17
EP2529043A1 (en) 2012-12-05
US20110180229A1 (en) 2011-07-28
TW201202491A (en) 2012-01-16

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