CN107699947A - 一种适用于g8高效多晶铸锭的热场结构 - Google Patents
一种适用于g8高效多晶铸锭的热场结构 Download PDFInfo
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- CN107699947A CN107699947A CN201711160391.3A CN201711160391A CN107699947A CN 107699947 A CN107699947 A CN 107699947A CN 201711160391 A CN201711160391 A CN 201711160391A CN 107699947 A CN107699947 A CN 107699947A
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- carbon
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- 238000005266 casting Methods 0.000 title claims abstract description 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000009413 insulation Methods 0.000 claims abstract description 28
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 25
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 18
- 239000010439 graphite Substances 0.000 claims abstract description 18
- 238000000462 isostatic pressing Methods 0.000 claims abstract description 17
- CREMABGTGYGIQB-UHFFFAOYSA-N carbon carbon Chemical compound C.C CREMABGTGYGIQB-UHFFFAOYSA-N 0.000 claims description 14
- 239000011203 carbon fibre reinforced carbon Substances 0.000 claims description 14
- 239000002131 composite material Substances 0.000 claims description 9
- 239000011449 brick Substances 0.000 claims description 6
- 238000007711 solidification Methods 0.000 claims description 6
- 230000008023 solidification Effects 0.000 claims description 6
- 239000013078 crystal Substances 0.000 abstract description 17
- 230000012010 growth Effects 0.000 abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 11
- 229910052710 silicon Inorganic materials 0.000 abstract description 11
- 239000010703 silicon Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 4
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000003698 anagen phase Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Silicon Compounds (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (6)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201711160391.3A CN107699947A (zh) | 2017-11-20 | 2017-11-20 | 一种适用于g8高效多晶铸锭的热场结构 |
Applications Claiming Priority (1)
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CN201711160391.3A CN107699947A (zh) | 2017-11-20 | 2017-11-20 | 一种适用于g8高效多晶铸锭的热场结构 |
Publications (1)
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CN107699947A true CN107699947A (zh) | 2018-02-16 |
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Family Applications (1)
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CN201711160391.3A Pending CN107699947A (zh) | 2017-11-20 | 2017-11-20 | 一种适用于g8高效多晶铸锭的热场结构 |
Country Status (1)
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CN (1) | CN107699947A (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202954139U (zh) * | 2012-12-04 | 2013-05-29 | 韩华新能源(启东)有限公司 | 多晶硅铸锭用新型石墨护板 |
CN104294360A (zh) * | 2014-10-28 | 2015-01-21 | 江苏美科硅能源有限公司 | 一种保温铸锭炉以及使用保温铸锭炉铸锭的方法 |
CN204918849U (zh) * | 2015-09-02 | 2015-12-30 | 晶科能源有限公司 | 一种多晶铸锭炉 |
CN207483904U (zh) * | 2017-11-20 | 2018-06-12 | 江苏高照新能源发展有限公司 | 适用于g8高效多晶铸锭的热场结构 |
CN207483905U (zh) * | 2017-11-20 | 2018-06-12 | 江苏高照新能源发展有限公司 | 一种用于高效多晶硅铸锭炉侧部隔热保温结构 |
-
2017
- 2017-11-20 CN CN201711160391.3A patent/CN107699947A/zh active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN202954139U (zh) * | 2012-12-04 | 2013-05-29 | 韩华新能源(启东)有限公司 | 多晶硅铸锭用新型石墨护板 |
CN104294360A (zh) * | 2014-10-28 | 2015-01-21 | 江苏美科硅能源有限公司 | 一种保温铸锭炉以及使用保温铸锭炉铸锭的方法 |
CN204918849U (zh) * | 2015-09-02 | 2015-12-30 | 晶科能源有限公司 | 一种多晶铸锭炉 |
CN207483904U (zh) * | 2017-11-20 | 2018-06-12 | 江苏高照新能源发展有限公司 | 适用于g8高效多晶铸锭的热场结构 |
CN207483905U (zh) * | 2017-11-20 | 2018-06-12 | 江苏高照新能源发展有限公司 | 一种用于高效多晶硅铸锭炉侧部隔热保温结构 |
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PB01 | Publication | ||
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SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: 968 GANGLONG Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant before: JIANGSU GAOZHAO NEW ENERGY DEVELOPMENT Co.,Ltd. |
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant after: Jiangsu Meike Solar Energy Technology Co.,Ltd. Address before: No.198 Guangming Road, Yangzhong Economic Development Zone, Zhenjiang City, Jiangsu Province Applicant before: Jiangsu Meike Solar Energy Technology Co.,Ltd. |
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RJ01 | Rejection of invention patent application after publication | ||
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Application publication date: 20180216 |