CN102741448B - 氧化物膜及其制造方法、与靶及氧化物烧结体的制造方法 - Google Patents

氧化物膜及其制造方法、与靶及氧化物烧结体的制造方法 Download PDF

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CN102741448B
CN102741448B CN201080062959.8A CN201080062959A CN102741448B CN 102741448 B CN102741448 B CN 102741448B CN 201080062959 A CN201080062959 A CN 201080062959A CN 102741448 B CN102741448 B CN 102741448B
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oxide film
oxide
copper
niobium
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CN102741448A (zh
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山添诚司
和田隆博
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Ryukoku University
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
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    • C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
    • C04B35/495—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on vanadium, niobium, tantalum, molybdenum or tungsten oxides or solid solutions thereof with other oxides, e.g. vanadates, niobates, tantalates, molybdates or tungstates
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
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    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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    • C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
    • C04B2235/3251—Niobium oxides, niobates, tantalum oxides, tantalates, or oxide-forming salts thereof
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    • C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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CN201080062959.8A 2010-02-01 2010-12-28 氧化物膜及其制造方法、与靶及氧化物烧结体的制造方法 Expired - Fee Related CN102741448B (zh)

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Application Number Priority Date Filing Date Title
JP2010-020343 2010-02-01
JP2010020343 2010-02-01
JP2010170331A JP5641402B2 (ja) 2010-02-01 2010-07-29 酸化物膜及びその製造方法、並びにターゲット及び酸化物焼結体の製造方法
JP2010-170331 2010-07-29
PCT/JP2010/073700 WO2011092993A1 (ja) 2010-02-01 2010-12-28 酸化物膜及びその製造方法、並びにターゲット及び酸化物焼結体の製造方法

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CN102741448B true CN102741448B (zh) 2014-04-09

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JP5996227B2 (ja) * 2012-03-26 2016-09-21 学校法人 龍谷大学 酸化物膜及びその製造方法
WO2015170534A1 (ja) * 2014-05-08 2015-11-12 三井金属鉱業株式会社 スパッタリングターゲット材
JP6503928B2 (ja) * 2015-06-29 2019-04-24 コニカミノルタ株式会社 電子写真感光体、画像形成装置および画像形成方法
KR102401226B1 (ko) * 2016-11-17 2022-05-24 니폰 가가쿠 고교 가부시키가이샤 아산화구리 입자, 그의 제조 방법, 광 소결형 조성물, 그것을 사용한 도전막의 형성 방법 및 아산화구리 입자 페이스트
JP7172902B2 (ja) * 2019-07-29 2022-11-16 トヨタ自動車株式会社 酸素吸蔵材
CN111678927A (zh) * 2020-06-08 2020-09-18 首钢集团有限公司 一种钢铁表面氧化物的分析方法

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JP3225049B2 (ja) * 1996-11-15 2001-11-05 シチズン時計株式会社 熱電素子の製造方法
JP4446064B2 (ja) * 2004-07-07 2010-04-07 独立行政法人産業技術総合研究所 熱電変換素子及び熱電変換モジュール
US7657377B2 (en) * 2007-05-31 2010-02-02 Cbg Corporation Azimuthal measurement-while-drilling (MWD) tool
JP2009047969A (ja) * 2007-08-21 2009-03-05 Seiko Epson Corp プロジェクタおよび表示装置
JP2009246085A (ja) * 2008-03-31 2009-10-22 Hitachi Ltd 半導体装置およびその製造方法
JP2010031346A (ja) * 2008-07-02 2010-02-12 Central Glass Co Ltd 酸化亜鉛薄膜及び薄膜積層体

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CN102741448A (zh) 2012-10-17
KR20120112716A (ko) 2012-10-11
JP5641402B2 (ja) 2014-12-17
US20120301673A1 (en) 2012-11-29
JP2011174167A (ja) 2011-09-08
WO2011092993A1 (ja) 2011-08-04

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