CN102738261B - 衬底处理装置、太阳能电池的制造方法及衬底的制造方法 - Google Patents

衬底处理装置、太阳能电池的制造方法及衬底的制造方法 Download PDF

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Publication number
CN102738261B
CN102738261B CN201210104813.6A CN201210104813A CN102738261B CN 102738261 B CN102738261 B CN 102738261B CN 201210104813 A CN201210104813 A CN 201210104813A CN 102738261 B CN102738261 B CN 102738261B
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China
Prior art keywords
processing chamber
reaction tube
gas
coating film
copper
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CN201210104813.6A
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English (en)
Chinese (zh)
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CN102738261A (zh
Inventor
西谷英辅
国井泰夫
丰田一行
宫博信
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INTERNATIONAL ELECTRIC CO Ltd
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Hitachi Kokusai Electric Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/126—Active materials comprising only Group I-III-VI chalcopyrite materials, e.g. CuInSe2, CuGaSe2 or CuInGaSe2 [CIGS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/167—Photovoltaic cells having only PN heterojunction potential barriers comprising Group I-III-VI materials, e.g. CdS/CuInSe2 [CIS] heterojunction photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/128—Annealing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201210104813.6A 2011-04-08 2012-04-06 衬底处理装置、太阳能电池的制造方法及衬底的制造方法 Active CN102738261B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011086642A JP2012222157A (ja) 2011-04-08 2011-04-08 基板処理装置、及び、太陽電池の製造方法
JP2011-086642 2011-04-08

Publications (2)

Publication Number Publication Date
CN102738261A CN102738261A (zh) 2012-10-17
CN102738261B true CN102738261B (zh) 2015-05-27

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Country Status (5)

Country Link
US (1) US20120258566A1 (cg-RX-API-DMAC7.html)
JP (1) JP2012222157A (cg-RX-API-DMAC7.html)
KR (2) KR20120115091A (cg-RX-API-DMAC7.html)
CN (1) CN102738261B (cg-RX-API-DMAC7.html)
TW (1) TWI462322B (cg-RX-API-DMAC7.html)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102015106693B4 (de) 2015-04-29 2024-11-28 Infineon Technologies Austria Ag Superjunction-Halbleitervorrichtung mit Übergangsabschlusserstreckungsstruktur
JP5741921B2 (ja) * 2011-04-08 2015-07-01 株式会社日立国際電気 基板処理装置、基板処理装置に用いられる反応管の表面へのコーティング膜の形成方法、および、太陽電池の製造方法
JP6068633B2 (ja) * 2013-05-31 2017-01-25 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び炉口蓋体
CN105531808A (zh) * 2013-09-10 2016-04-27 泰拉半导体株式会社 热处理装置的腔室及其制造方法
CN104677116B (zh) * 2014-12-30 2017-09-19 湖南顶立科技有限公司 一种自膨胀式超高温加热器

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2855458B2 (ja) * 1989-12-15 1999-02-10 東芝セラミックス株式会社 半導体用処理部材
US5273911A (en) * 1991-03-07 1993-12-28 Mitsubishi Denki Kabushiki Kaisha Method of producing a thin-film solar cell
US5680013A (en) * 1994-03-15 1997-10-21 Applied Materials, Inc. Ceramic protection for heated metal surfaces of plasma processing chamber exposed to chemically aggressive gaseous environment therein and method of protecting such heated metal surfaces
JP4380211B2 (ja) * 2002-08-30 2009-12-09 東ソー株式会社 石英ガラス部品及びその製造方法並びにそれを用いた装置
US20060240677A1 (en) * 2002-09-20 2006-10-26 Hitachi Kokusai Electric Inc., Method for manufacturing semiconductor device and substrate processing apparatus
EP2102898A4 (en) * 2006-11-10 2011-06-29 Solopower Inc REEL TO REEL REACTION OF A PRECURSOR FOIL FOR FORMING A SOLAR CELL ABSORPTION LAYER
US20080210168A1 (en) * 2007-01-18 2008-09-04 May Su Single chamber, multiple tube high efficiency vertical furnace system
JP5154814B2 (ja) * 2007-03-29 2013-02-27 東ソー・クォーツ株式会社 石英ガラス材料の製造方法
WO2010060646A1 (de) * 2008-11-28 2010-06-03 Volker Probst Verfahren zum herstellen von halbleiterschichten bzw. von mit elementarem selen und/oder schwefel behandelten beschichteten substraten, insbesondere flächigen substraten
EP2144026B1 (de) * 2008-06-20 2016-04-13 Volker Probst Prozessvorrichtung und verfahren zum prozessieren von gestapelten prozessgütern
US20110117728A1 (en) * 2009-08-27 2011-05-19 Applied Materials, Inc. Method of decontamination of process chamber after in-situ chamber clean

Also Published As

Publication number Publication date
KR20150002556A (ko) 2015-01-07
CN102738261A (zh) 2012-10-17
US20120258566A1 (en) 2012-10-11
JP2012222157A (ja) 2012-11-12
TWI462322B (zh) 2014-11-21
TW201251100A (en) 2012-12-16
KR20120115091A (ko) 2012-10-17

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Effective date of registration: 20181130

Address after: Tokyo, Japan, Japan

Patentee after: International Electric Co., Ltd.

Address before: Tokyo, Japan, Japan

Patentee before: Hitachi Kunisai Electric Corp.