CN102738105A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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CN102738105A
CN102738105A CN2012101003205A CN201210100320A CN102738105A CN 102738105 A CN102738105 A CN 102738105A CN 2012101003205 A CN2012101003205 A CN 2012101003205A CN 201210100320 A CN201210100320 A CN 201210100320A CN 102738105 A CN102738105 A CN 102738105A
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metal film
semiconductor device
porous matter
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CN102738105B (zh
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秋野胜
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Ablic Inc
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Seiko Instruments Inc
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Abstract

本发明提供一种难以产生由于引线接合所导致的裂纹的半导体装置及其制造方法。本发明的半导体装置，具有：半导体衬底；设置在上述半导体衬底的表面的绝缘膜；设置在上述绝缘膜之上的多孔质金属膜；设置在上述多孔质金属膜之上，并设置定义焊盘区域的开口部的保护膜；以及对上述开口部进行引线接合的引线。因引线接合的冲击所产生的应力通过多孔质金属膜的变形而几乎全都被多孔质金属膜所吸收，防止在绝缘膜产生裂纹。

Description

半导体装置及其制造方法
技术领域
本发明涉及具备在引线接合中所使用的焊盘(pad)的半导体装置及其制造方法。
背景技术
就具备现有焊盘的半导体装置进行说明。图9示出现有的半导体装置的焊盘的局部截面图。在该例子中，在绝缘膜91的上表面设置的最上层的金属膜92之上的保护膜93的开口部被定义为焊盘，引线94对该焊盘进行引线接合(例如，参照专利文献1)。
专利文献1：日本专利公开特开平03-049231号公报
但是，在具备现有焊盘的半导体装置中，存在由于因引线接合的冲击所产生的应力而在从金属膜92形成的焊盘或焊盘下的绝缘膜91产生裂纹的危险性，成为问题。
发明内容
本发明是为了解决上述问题而完成的，其课题为提供具备焊盘的半导体装置及其制造方法，该焊盘具有难以产生由引线接合所导致的裂纹的构造。
为了解决上述课题，本发明为半导体装置，具有：半导体衬底；设置在上述半导体衬底的表面的绝缘膜；设置在上述绝缘膜之上的多孔质金属膜；设置在上述多孔质金属膜之上，并设置定义焊盘区域的开口部的保护膜；以及对上述开口部进行引线接合的引线。
另外，为了解决上述课题，本发明为半导体装置的制造方法，具有：在半导体衬底的表面设置绝缘膜的工序；在上述绝缘膜之上有选择地设置多孔质金属膜的工序；在上述多孔质金属膜之上设置保护膜的工序；在上述多孔质金属膜之上的上述保护膜设置定义焊盘区域的开口部的工序；将引线对上述开口部进行引线接合的的工序。
依据本发明，因引线接合的冲击所产生的应力通过多孔质金属膜的变形而几乎都被多孔质金属膜所吸收。因而，可以防止由于因该冲击所产生的应力而在多孔质金属膜之下的绝缘膜产生裂纹。
附图说明
图1是示出半导体装置的截面图。
图2是示出半导体装置的制造方法的截面图。
图3是示出半导体装置的截面图。
图4是示出半导体装置的截面图。
图5是示出半导体装置的截面图。
图6是示出半导体装置的截面图。
图7是示出半导体装置的截面图。
图8是示出半导体装置的截面图。
图9是示出现有半导体装置的截面图。
图10是示出半导体装置的制造方法的局部截面图。
图11是示出半导体装置的局部截面图。
图12是示出半导体装置的局部截面图。
图13是示出半导体装置的局部截面图。
图14是示出半导体装置的局部截面图。
附图标记说明
1半导体装置；2绝缘膜；3金属膜；4沟槽；5金属膜；6空孔；7多孔质金属膜；9保护膜；10引线；11密封树脂；12第一金属纳米粒子；13第二金属纳米粒子；14粒子间空孔；15有机粘合剂；16导电膏。
具体实施方式
下面，参照附图来说明本发明的实施方式。
首先，就半导体装置的构成进行说明。图1是示出半导体装置的实施例的截面图。实施例所示的半导体装置具备：半导体衬底1、绝缘膜2、多孔质金属膜7、金属膜5、保护膜9、引线10以及密封树脂11。
在半导体衬底1的表面设置绝缘膜2，在绝缘膜2的部分表面上有选择地设置多孔质金属膜7。在多孔质金属膜7之上设置金属膜5，在金属膜5之上设置保护膜9。然后，在该保护膜9上以使金属膜5表面的一部分露出的方式设置开口部。保护膜9的开口部定义为焊盘区域。通过引线接合对焊盘区域连接引线10。其后，用密封树脂11密封半导体装置。
接着，通过图2来说明使用有多孔质金属膜7的半导体装置的制造方法。图2是示出半导体装置的制造方法的示意截面图。
如图2(A)所示，通过溅射在绝缘膜2之上成膜金属膜3。在金属膜3之上涂敷抗蚀剂(未图示)，并通过曝光/显影而有选择地存留抗蚀剂。将该抗蚀剂作为掩模，以金属膜3的膜厚量来蚀刻金属膜3，如图2(B)所示，在金属膜3形成沟槽(trench)4，其后剥离抗蚀剂。
其后，将半导体装置的表面蚀刻至约
Figure BSA00000698523600031
的深度，除去氧化膜。如图2(C)所示，通过溅射在具备沟槽4的金属膜3之上成膜金属膜5。此时，相比在沟槽4的下部，金属膜5在上部更厚地成膜。
如图2(D)所示，在沟槽4填充具备空孔6的金属膜5。这样，形成多孔质金属膜7，并在其上形成金属膜5。
接着，就因引线接合的冲击所产生的应力对半导体装置的影响进行说明。
虽未图示，对焊盘进行引线接合时，以引线接合的冲击点为中心，由于因该冲击所产生的应力，多孔质金属膜7中的多个空孔6在与引线接合的冲击相应的方向上分别压垮，多孔质金属膜7变形。此时，通过多孔质金属膜的变形而使所产生的应力几乎都被多孔质金属膜7所吸收。另一方面，由于多孔质金属膜7和绝缘膜2的接合面几乎没有变形，所以引线接合的冲击几乎不会影响绝缘膜2。也就是说，变得难以在绝缘膜2产生由于因引线接合的冲击所产生的应力而导致的裂纹。
[效果]这样一来，因引线接合的冲击所产生的应力通过多孔质金属膜7的变形而几乎都被多孔质金属膜7所吸收。因此，变得难以在多孔质金属膜7之下的绝缘膜2产生由于因该冲击所产生的应力而导致的裂纹。
[变形例1]在形成决定图2(B)形状的抗蚀剂图案时，可以如图3所示，通过使用经过适当变更的掩模，在多孔质金属膜7有选择地设置具备沟槽4及空孔6的空孔区域，以及不具备沟槽4及空孔6的非空孔区域7a。以覆盖该多孔质金属膜7的侧面的方式设置非空孔区域7a，使空孔区域与非空孔区域7a的界面位于焊盘开口端或者位于比焊盘开口端更靠外侧。即，非空孔区域7a的图上的半导体衬底方向的厚度形成得与保护膜9和金属膜5的重叠宽度相等或者在其以下。由此，在半导体制造过程中的保护膜9的形成工序中，由于非空孔区域7a存在而不会露出空孔6，所以没有空孔6内部的污染。另外，至少在焊盘区域的下方存在多孔质金属膜7，所以与图1的半导体装置同样，难以在多孔质金属膜7之下的绝缘膜2产生裂纹。
[变形例2]如图4所示，可以在金属膜5a之上设置图2(D)的金属膜5全部被蚀刻的多孔质金属膜7。
[变形例3]如图5所示，可以在图4的半导体装置中进而设置非空孔区域7a。
[变形例4]如图6所示，可以在绝缘膜2之上设置图2(D)的金属膜5全部被蚀刻的多孔质金属膜7。
[变形例5]如图7所示，可以在图6的半导体装置中进而设置非空孔区域7a。
[变形例6]如图8所示，可以在图1的半导体装置中使金属膜5b的区域大于多孔质金属膜7的区域。
[变形例7]金属膜3在图2(B)中以金属膜3的膜厚量进行蚀刻。虽未图示，也可以浅于金属膜3的膜厚进行蚀刻。
[变形例8]虽未图示，可以在制造多孔质金属膜7时，在用于溅射的靶材与半导体晶片的角度设为30°～80°、用于溅射的氩气的压力设为比通常时高的2Pa～3Pa的状态下，通过成膜金属膜来形成多孔质金属膜7。
[变形例9]图10～图14是示出本发明的半导体装置的多孔质金属膜7区域的膜构造以及制造方法的局部截面图。图10示出在绝缘膜2上涂敷有导电膏16的状态。导电膏是多个第一金属纳米粒子12和有机粘合剂15的液状混合物，在其中分散有金属纳米粒子12。若对其进行烧成则有机粘合剂分解而成为气体，所以若在真空气氛下进行脱气则如图11～12所示多个金属纳米粒子12彼此接合。然后，在该粒子与粒子之间形成粒子间空孔14。这样，形成包括金属纳米粒子和粒子间空孔的多孔质金属膜7。这里，多孔质金属膜7通过至少由上下两层以上的金属纳米粒子层而形成，从而能够成为多孔质。
虽未图示，在如上述那样形成的多孔质金属膜7之上通过溅射等方法淀积金属膜，并通过构图而形成电极，接下来通过CVD等淀积保护膜，并设置开口部，进而通过在开口部进行引线接合而成为图1所示的半导体装置。
虽然在图11～图12中使用含有具有粒径大致一致的单峰粒径(粒度)分布的金属纳米粒子的导电膏来形成多孔质金属膜，但在图13～图14中示出由含有具有双峰粒径分布的金属纳米粒子的导电膏所形成的多孔质金属膜7。通过与粒径大的第一金属纳米粒子12相接触而配置粒径小的第二金属纳米粒子13，更多地形成小于图11～图12所示的粒子间空孔的粒子间空孔14。通过采用上述构成，因引线接合的冲击所产生的应力通过多孔质金属膜更加得到缓和。另外，如果是本构成，则能够通过增加金属粒子间的接点而成为更加致密的低电阻的电极焊盘。
此外，在采用如图13那样的排列的情况下，第二金属纳米粒子13的粒径为第一金属纳米粒子12的粒径的
Figure BSA00000698523600061
倍，而在采用如图14那样的排列的情况下则成为
Figure BSA00000698523600062
倍。因而，为形成可靠的接点，优选第二金属纳米粒子的粒径的分布中心在图13的排列中为第一金属纳米粒子的粒径的0.41倍到0.45倍左右，而在图14的排列中同样为0.15倍到0.2倍左右。

Claims (14)

1.一种半导体装置，具有：
半导体衬底；
绝缘膜，设置在所述半导体衬底的表面；
多孔质金属膜，设置在所述绝缘膜之上；
保护膜，设置在所述多孔质金属膜之上，并设置有定义焊盘区域的开口部；以及
引线，在所述焊盘区域中对所述多孔质金属膜进行引线接合。
2.根据权利要求1所述的半导体装置，还具备设置在所述多孔质金属膜与所述保护膜之间的金属膜。
3.根据权利要求1所述的半导体装置，还具备设置在所述绝缘膜与所述多孔质金属膜之间的金属膜。
4.根据权利要求1至3中任意一项所述的半导体装置，其中，
所述多孔质金属膜包括具备空孔的空孔区域和非空孔区域，
所述空孔区域与所述非空孔区域的界面位于焊盘开口端或者位于比所述焊盘开口端更靠外侧。
5.根据权利要求1所述的半导体装置，还具备设置在所述多孔质金属膜与所述保护膜之间的金属膜，
所述金属膜的区域大于所述多孔质金属膜的区域。
6.一种半导体装置的制造方法，具有：
在半导体衬底的表面设置绝缘膜的工序；
在所述绝缘膜之上有选择地设置多孔质金属膜的工序；
在所述多孔质金属膜之上设置保护膜的工序；
在所述多孔质金属膜之上的所述保护膜设置定义焊盘区域的开口部的工序；以及
将引线对所述开口部进行引线接合的工序。
7.根据权利要求6所述的半导体装置的制造方法，其中，所述设置多孔质金属膜的工序具有：
在第一金属膜形成沟槽的工序；
在具备所述沟槽的所述第一金属膜之上通过溅射成膜第二金属膜的工序；以及
在所述沟槽填充具备空孔的所述第二金属膜的工序。
8.根据权利要求7所述的半导体装置的制造方法，其中，所述设置多孔质金属膜的工序是，
用于溅射的靶材与半导体晶片的角度为30°～80°、用于所述溅射的氩气的气压为2Pa～3Pa来成膜金属膜的工序。
9.根据权利要求1至3中任意一项所述的半导体装置，其特征在于，所述多孔质金属膜包括多个金属纳米粒子和粒子间空孔。
10.根据权利要求9所述的半导体装置，其特征在于，关于所述多孔质金属膜，所述金属纳米粒子的层至少包括上下两层。
11.根据权利要求10所述的半导体装置，其特征在于，所述金属纳米粒子具备：
具有第一粒径的第一金属纳米粒子；以及
具有第二粒径的第二金属纳米粒子。
12.根据权利要求11所述的半导体装置，其特征在于，所述第二金属纳米粒子的粒径为所述第一金属纳米粒子的粒径的0.15倍以上。
13.根据权利要求6所述的半导体装置的制造方法，其中，设置所述多孔质金属膜的工序具有：
在所述绝缘膜之上涂敷导电膏的工序；以及
烧成所述所涂敷的导电膏的工序。
14.根据权利要求13所述的半导体装置的制造方法，其中，涂敷所述导电膏的工序是涂敷包含具有两种粒径的金属纳米粒子和有机粘合剂的导电膏的工序。
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