CN102732856B - 立式分批式成膜装置 - Google Patents

立式分批式成膜装置 Download PDF

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Publication number
CN102732856B
CN102732856B CN201210091746.9A CN201210091746A CN102732856B CN 102732856 B CN102732856 B CN 102732856B CN 201210091746 A CN201210091746 A CN 201210091746A CN 102732856 B CN102732856 B CN 102732856B
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China
Prior art keywords
film
processing chamber
mentioned
gas
processed
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CN201210091746.9A
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English (en)
Chinese (zh)
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CN102732856A (zh
Inventor
远藤笃史
黑川昌毅
入宇田启树
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/694—Inorganic materials composed of nitrides
    • H10P14/6943—Inorganic materials composed of nitrides containing silicon
    • H10P14/69433—Inorganic materials composed of nitrides containing silicon the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326—Deposition processes
    • H10P14/6328—Deposition from the gas or vapour phase
    • H10P14/6334—Deposition from the gas or vapour phase using decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/69—Inorganic materials
    • H10P14/692—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses
    • H10P14/6921—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon
    • H10P14/69215—Inorganic materials composed of oxides, glassy oxides or oxide-based glasses containing silicon the material being a silicon oxide, e.g. SiO2

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
CN201210091746.9A 2011-03-31 2012-03-30 立式分批式成膜装置 Active CN102732856B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2011-078481 2011-03-31
JP2011078481A JP5595963B2 (ja) 2011-03-31 2011-03-31 縦型バッチ式成膜装置

Publications (2)

Publication Number Publication Date
CN102732856A CN102732856A (zh) 2012-10-17
CN102732856B true CN102732856B (zh) 2015-04-29

Family

ID=46925559

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201210091746.9A Active CN102732856B (zh) 2011-03-31 2012-03-30 立式分批式成膜装置

Country Status (5)

Country Link
US (1) US20120247391A1 (https=)
JP (1) JP5595963B2 (https=)
KR (1) KR101474758B1 (https=)
CN (1) CN102732856B (https=)
TW (1) TWI540657B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103866294B (zh) * 2014-04-03 2017-01-11 江西沃格光电股份有限公司 镀膜充气装置
CN106467980B (zh) * 2015-08-21 2019-01-29 东莞市中镓半导体科技有限公司 一种大型垂直式hvpe反应室的装配辅助装置
JP6843087B2 (ja) 2018-03-12 2021-03-17 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
KR102477770B1 (ko) * 2018-05-08 2022-12-14 삼성전자주식회사 막 형성 장치, 막 형성 방법 및 막 형성 장치를 이용한 반도체 장치의 제조 방법
JP7271485B2 (ja) * 2020-09-23 2023-05-11 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム
CN114369813B (zh) * 2020-10-15 2023-05-26 长鑫存储技术有限公司 扩散炉
CN114606476A (zh) * 2020-12-03 2022-06-10 长鑫存储技术有限公司 薄膜的炉管沉积方法
KR20220143222A (ko) 2021-04-15 2022-10-25 삼성전자주식회사 박막 증착 장치 및 박막 증착 방법
JP7658672B2 (ja) 2021-06-08 2025-04-08 東京エレクトロン株式会社 熱処理装置
KR20230007952A (ko) 2021-07-06 2023-01-13 에이에스엠 아이피 홀딩 비.브이. 추출기 챔버가 구비된 복수의 기판 처리용 장치

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0189732U (https=) * 1987-12-07 1989-06-13
JPH05347257A (ja) * 1992-06-15 1993-12-27 Nec Yamaguchi Ltd 減圧気相成長装置
JPH065533A (ja) * 1992-06-18 1994-01-14 Nippon Steel Corp 熱処理炉
JPH06196428A (ja) * 1992-12-24 1994-07-15 Sanyo Electric Co Ltd 半導体基板の処理装置
JPH0758030A (ja) * 1993-08-18 1995-03-03 Toshiba Corp 半導体製造装置
JPH08115883A (ja) * 1994-10-12 1996-05-07 Tokyo Electron Ltd 成膜装置
JP2000174007A (ja) * 1998-12-07 2000-06-23 Tokyo Electron Ltd 熱処理装置
WO2001061736A1 (fr) * 2000-02-18 2001-08-23 Tokyo Electron Limited Procede de traitement d'une plaquette
JP2001274107A (ja) * 2000-03-28 2001-10-05 Nec Kyushu Ltd 拡散炉
JP4706260B2 (ja) * 2004-02-25 2011-06-22 東京エレクトロン株式会社 被処理体の酸化方法、酸化装置及び記憶媒体
KR100745130B1 (ko) * 2006-02-09 2007-08-01 삼성전자주식회사 박막 증착 장치 및 방법
US20090004405A1 (en) * 2007-06-29 2009-01-01 Applied Materials, Inc. Thermal Batch Reactor with Removable Susceptors
JP5198299B2 (ja) * 2008-04-01 2013-05-15 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及び基板処理方法
JP5284182B2 (ja) * 2008-07-23 2013-09-11 株式会社日立国際電気 基板処理装置および半導体装置の製造方法
JP5658463B2 (ja) * 2009-02-27 2015-01-28 株式会社日立国際電気 基板処理装置及び半導体装置の製造方法

Also Published As

Publication number Publication date
KR101474758B1 (ko) 2014-12-19
TWI540657B (zh) 2016-07-01
KR20120112082A (ko) 2012-10-11
CN102732856A (zh) 2012-10-17
JP2012212819A (ja) 2012-11-01
US20120247391A1 (en) 2012-10-04
TW201250904A (en) 2012-12-16
JP5595963B2 (ja) 2014-09-24

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