CN102652266B - 基于rf电压的等离子体处理系统控制 - Google Patents
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Abstract
提供了一种利用从RF电压信息推导出来的晶片偏压信息控制等离子体处理系统的方法。所述RF电压经由模拟到数字方法处理来获得至少每个基带频率和宽带频率的峰值电压信息。所述峰值电压信息然后使用来推导所述晶片偏压信息，以用作到所述等离子体处理系统的硬件/软件的反馈或控制信息。
Description
背景技术
在半导体工业中，用于制造硅晶片的RF驱动等离子体腔的使用是很常见的。通常需要在这些应用中监视鞘层电压，以及尤其是鞘层电压如何与晶片自身的DC偏压电势相关。
目前，具有多种技术来确定晶片电势，以及鞘层和主体等离子体电势。关于晶片DC偏压电势，一种监视方法包括通过检测在晶片与静电卡盘（ESC）之间的漏电流同时将施加的DC电压变换到ESC来测量晶片的自偏电压。虽然该技术使用在一些当前生产设置中，但是计算的值高度依赖于耦合到在系统中的ESC类型的漏电流的幅度。检测经过晶片到ESC的漏电流的方法也高度依赖于不同类型的背侧晶片膜片。
确定晶片偏压电势的另一种方法是通过使用附接到ESC的外部边缘并且与等离子体接触的碳化硅销针。然而，这种销针是消耗品，并且在生产环境中必须频繁更换。
检测在晶片上的DC偏压的第三种方法是通过在ESC处的RF电压探针以及由RF峰值到峰值电压计算晶片电压的信号处理单元。该方法通过使用校准增益和偏移量（offset）将在ESC处的RF电压按比例调整成DC值，提供不需要探针直接接触等离子体的检测晶片DC偏压电压的方式。该方法假设RF峰值到峰值电压与晶片的DC电势为纯线性关系，这不适用于多频率等离子体的情况。图1示出晶片偏压与RF Vpp的关系。在图1中，当应用线性拟合时，R平方值显著小于1[例如，R2：0.90]。
附图说明
本发明将借助在附图中的实例示出，并且不以限制的方式示出，并且其中相同的参考标记表示相似元件，并且其中：
图1表示晶片偏压与RF Vpp的关系。
图2表示晶片偏压与公开的RF电压传递函数（transfer function）的输出的关系，其中R平方值显著接近1。
图3描述测试确定由碳化硅销针观察的等离子体电势与由布线晶片测量的晶片电势之间的关系。
图4表示在利用在Lam DFC 2300 Flex45平台上的2MHz、27MHz、以及60MHz的HARC（高的深宽比接触）处理期间由Si HER（硅热边缘环）观察的电压与由碳化硅销针观察的电压之比。
图5A描述具有由三个RF发生器供电的ESC电源组成的带有RF驱动等离子体的系统。
图5B示出本公开发明的实施例，其中由电容分压器网络组成的电压探针附接到靠近ESC基板以及信号调理和信号处理装置的RF棒。
图5C是具有数字信号处理单元的模拟RF电压信号调整网络的实施例。
图6-10讨论用于基于频率相关RF电压信号计算晶片电势的高阻抗RF电压探针。
图11根据本发明的实施例表示示例数字实施例的方框图。
具体实施方式
现在将参考其中如在附图中所示的实施例详细描述本发明。在下面的描述中，提出多个具体细节以便提供对本发明的全面理解。然而，本领域的技术人员将会清楚，可以在没有一些或所有这些具体细节的情况下实践本发明。在其他情况下，不需要详细描述已知处理步骤和/或结构以免不必要地使本发明难以理解。
本文在下面描述各种实施例，包括方法和技术。应该认识到，本发明也可以覆盖制造的物品，包括用于实施本发明技术的实施例的计算机可读指令存储在其上的计算机可读介质。计算机可读介质可以包括，例如，半导体的、磁的、光磁的、光的、或者用于存储计算机可读代码的其他形式计算机可读介质。此外，本发明还可以覆盖用于实践本发明实施例的装置。这些装置可以包括专用和/或可编程电路以实施有关本发明实施例的任务。这些装置的实例包括通用计算机和/或经恰当编程的专用计算设备，并且可以包括适于有关本发明实施例的各种任务的计算机/计算设备以及专用/可编程电路的组合。
本公开发明的实施例，通过在ESC处恰当地滤波和调理RF电压以及使用计算多个RF频率在给晶片施加偏压中的贡献的传递函数，将给终端用户提供测量晶片偏压电势的能力。图2表示晶片偏压与公开的RF电压传递函数的输出相关性，其中R平方值显著靠近1[例如，R2：0.97]。
本发明可以构思为试图改进用碳化硅销针测量DC偏压电势的现有方法。发现该销针以及容纳在该销针内的晶体绝缘材料的磨损率是产品生产量的限制因素。已经确定虽然在多频率等离子体中的RF电压与晶片电势之间存在非线性关系，但是可以基于驱动等离子体的每个单个频率的贡献，使用传递函数来推导晶片电势。
已经完成测试来证明由碳化硅销针观察的等离子体电势与由布线晶片测量的晶片电势之间的关系，如图3所描述。然后示出，公开的传递函数显著地与由现有碳化硅销针观察的电压信号相关联。
图4表示在利用在Lam DFC 2300Flex45平台（可以从CA的FremontLam研究公司获得）上的2MHz、27MHz、以及60MHz的HARC（高的深宽比接触）处理期间由硅HER（硅热边缘环）观察的电压与由碳化硅销针观察的电压之比。给出前述碳化硅销针与布线晶片的相关性，可换特性对下面的陈述提供证明，即包含驱动等离子体的单个RF电压的函数也是在晶片接口处的等离子体鞘层电压的有效表示。在一个或多个实施例中，可以在RF电压上执行状态空间分析以推导传递函数。状态空间模型是已知的并且这里将不详述。在一个或多个实施例中，可以使用已知瞬态处理技术来提高鲁棒性。
参考下面的附图和讨论可以更好地理解本发明实施例的特征和优点。
总体而言，间接测量在RF驱动等离子体内的等离子体鞘层电势的DC成分的能力依赖于连接到靠近ESC的RF棒的电压探针。图5A描述具有由三个RF发生器504A、504B、504C经由阻抗匹配网络506供电的ESC电源组成的带有RF驱动等离子体的系统。虽然这些RF发生器提供如图所示的不同RF频率，但是使用的频率数量、使用的精确频率以及使用的多个RF发生器可以根据应用改变。靠近（即，足够靠近以便能够感应RF电压）基板508（或者与ESC关联的另外非等离子体暴露成分）的RF棒或另外的合适的RF感应机构提供RF电压给电容分压器网络530。本文下面将关联图5B更详细讨论电容分压器530。电容分压器网络530的输出然后将提供给信号调理和处理模块532，其将在本文下面中关联图5C更详细地讨论。
图5B示出本公开发明的示例实施例，其中包括电容分压器网络530的电压探针耦接到靠近ESC基板以及耦接到信号调理和信号处理装置的RF棒（或者另外的合适的RF感应机构）。在图5B的实例中，电容器C1与电容器C2串联，其然后与并联的C3/C4串联。如图5B所示获得电压信号。电容分压器电压探针给要感测的RF电压提供高阻抗路径，不会过度地扰乱驱动等离子体的RF功率。
电容分压器的具体组成依赖于驱动等离子体的RF发生器，其中最高频率发生器是主要因素。通过用于将电压信号携带到信号调理和信号处理装置而并联50欧姆同轴电缆来提供到地的低阻抗路径，电容分压器也充分地衰减电压信号。注意，这些值提供作为示例并且仅用于参考并且不作为限制。在图5B的示例中，输入阻抗是显著较高的[Z=1/(ω*C)，当ω=60MHz时，C=0.5pF，那么Z约为33K欧姆]，并且到地的阻抗是较低的（在60MHz为约31欧姆）。
RF电压信号然后通过模数滤波器的网络调理。图5C为在图5A的方框532中实施的模拟RF电压信号调理网络类型的示例实施例。在模拟RF电压信号调理网络的输入端，信号分成多个独立通道（在图5C中为4个）以能对用于驱动等离子体的具体RF频率进行RF滤波。在该实施例中，RF发生器频率为2MHz、27MHz、以及60MHz。一个通道不被滤波，其保持宽带电压频率频谱。在该实施例中，四个通道经由无源峰值检测器[例如，1N5711二极管]转化为DC信号，虽然同样可以使用有源峰值检测器。
DC信号转化为数字信号以便由数字信号处理器处理，其中单个信号被校准并且输入到晶片偏压传递函数。传递函数的输出然后反馈到偏压补偿网络。应该注意，公开的模拟信号调理网络完全可以在数字域内完成。在该情况下，可以不需要信号分离器或模拟滤波器，仅仅需要模数转换器（ADC）以及信号处理单元（DSP、FPGA、CPLD等），其中信号处理单元用于所有滤波、峰值检测、校准、以及传递函数计算。
在一个或多个实施例中，每个电压通道的校准通过施加增益和偏移量到每个通道来执行。用于每个通道（在图5A-5C的实例中的2MHz、27MHz、60MHz以及宽带非滤波电压）的增益和偏移量由响应于预定通道的信号以及它与晶片偏压的相关性确定。对于已滤波通道，通过响应于用于该唯一单个频率的晶片偏压特征化预定已滤波通道来完成该过程。例如，2MHz通道的响应将与用于仅由2MHz驱动的等离子体的晶片偏压相关，并且后续增益和偏移量将使用来校准这个通道。对于27MHz和60MHz重复该过程。宽带信号通过将用于由所有三个频率驱动的等离子体的晶片偏压与每一后续变量（仅2MHz、2MHz和27MHz、仅60MHz、27MHz和60MHz等）相关来校准。
影响校准的重要因素也是电容分压器电压探针530的响应。电容分压器趋于对于每个频率具有唯一的信号响应。作为建议解决方案，网络分析仪可以使用来特征化电容分压器电压传感器的响应，并且该响应然后可以相应地使用来修改前述校准系数。这在制造精确和可重复仪器方面是重要因素。
用于计算晶片偏压的传递函数包括四个输入：对于2MHz、27MHz、60MHz的经校准DC电压信号以及非滤波宽带信号。该电压信号然后乘以一组系数。每个系数是驱动等离子体的预定频率组合的函数。这些系数例如通过包括晶片偏压和四个电压信号（2MHz、27MHz、60MHz、以及宽带）的矩阵的主成分分析（PCA）来推导。然后相加系数乘积的单个结果，产生晶片偏压值。也可以使用条件语句和加权因子来优化这些系数并且因此优化传递函数结果。
图6-10基于频率相关RF电压信号进一步讨论用于计算晶片电势的高阻抗RF电压探针。在图6中，产生了线性传递函数，并且示例流程图示出该线性传递函数如何可以使用来产生晶片偏压值。图7为示出使用非线性传递函数来产生晶片偏压值的流程图。非线性传递函数被认为如果不是大多数情况下，也会在一些情况下，能够更好地由RF电压逼近晶片偏压值。图8、9和10为每个方法（线性与非线性之比）的价值的进一步解释。根据本发明的实施例，两种方法都提供将感测的RF电压与晶片偏压电压关联的方法，特别在多频率应用中。晶片偏压电压然后可以使用作为用于在等离子体处理系统中的ESC电源和/或偏压补偿网络和/或其他子系统的反馈或控制信号。
在另外的实施例中，ESC RF信号可以在数字域中处理以提高可配置性以及提供例如一些高的深宽比蚀刻等严格的处理应用所需要的更宽RF功率动态范围。图11示出了示例性的数字应用的实施方式的方框图。在方框1102中的输入ESC RF信号可以由电容传感器获得，例如举例而言由图5a的电容分压器网络530获得。在图11的示例中，输入RF信号的范围为从大约350KHz到120MHz，其中基带频率在大约400KHz、2MHz、13MHz、27MHz、以及60MHz处，但这些示例值及包含的多个频率不限制本发明的范围。
输入RF信号然后利用反混叠低通滤波器1104来滤波，其具有设置在后续使用来将模拟输入RF信号从方框1102转换为数字信号的模数转换器（ADC）的采样频率的大约1/2的滤波器频率。在图11的示例情况下，ADC采样率为250MHz，并且因此反混叠滤波器设置在大约120MHz，其小于ADC采样率（根据奈奎斯特理论用于符合要求的信号分辨率）的1/2。
来自反混叠滤波器1104的经滤波RF信号然后由RF分离器1106分离成两个通道（利用恰当的低通和高通滤波器）以馈送到双通道ADC 1112内。RF分离可选择来提高信号分辨率，并且实施为接受使用双通道ADC的优化。然而，如果必要，可以使用单通道ADC并且将来自反混叠滤波器1104的经滤波RF信号馈送到单通道ADC内。
因此，与图5C的模拟方法相比，模拟输入RF信号不需要在模拟域中分离和/或在模拟域中峰值检测。相反，RF信号由ADC 1112转换（在经过反混叠滤波器恰当滤波之后）到数字域内。这样既提高了可配置性又提高了动态范围响应，因为没有经受模拟峰值检测方案的限制。特别地，数字方法克服在模拟峰值检测方案中由整流二极管的非线性响应施加的限制。模拟峰值检测方案的另外限制因素是二极管输出趋于作为本质上为功率检测器的输入电压RMS的函数。这个特性进一步限制模拟检测器分辨实际RF峰值幅度而不是作为RMS信号的平均RF电压峰值的能力。数字方法回避了这些和其他问题。
数字处理通过在图11中由现场可编程门阵列（FPGA）1120表示的逻辑电路执行。在当前示例中FPGA部分地使用来获得FPGA在多通道上的并行处理能力的优点，但也可以使用其他形式的逻辑电路，包括微处理器、微控制器、专用硬件电路、数字信号处理器等。
其中一个改进涉及使用来自RF发生器（1122）的RF信号作为进入到数字处理方框1120的独立输入。可以包括来自RF发生器的每个RF信号的状态（on/off）、基带频率、驱动信号相位的该独立输入RF信号数据，其可以使用来抽取基音以在方框1120中调节数字滤波器（例如带通滤波器）。相位数据在分辨在各个频率的ESC RF信号中的调制效果以更精确地计算在任何预定频率处的电压方面是尤其有用的。
为了详细说明，相位信号使得RF信号能解调，该RF信号是等离子体动态性（作为有源非线性载荷）的函数。常规惯例将等离子体腔看作RF混合器，产生作为RF源的频率以及气体的相关/不相关率和等离子体鞘层的膨胀/收缩的函数的音调。通过使用用于提供源给等离子体和/或偏压等离子体的每个RF发生器的驱动信号的相位，可以更精确地分辨每个基带RF音调，即使在例如RF发生器的脉动等大多数动态等离子体情况中也是如此。
可替代地或附加地，利用从RF发生器的RF信号抽取的基带音调的这些数字滤波器的调节使得能够构造在基带频率周围的非常精细和较窄裁剪滤波器，从而大大地提高了数字处理方框1120的信号分辨率的精度。
来自数字处理方框1120的输出包括针对每个基带频率和针对合成宽带信号的峰值电压（V峰值）。峰值检测可以是正峰值、负峰值、或者两者。对于合成信号，负峰值信息在处理相位期间尤其是有用的，因为通常在作为每个RF源的谐波的函数的波形中存在不对称。因此，通过检测正峰值和负峰值，可以分辨等离子体中的谐波的相对度量（metric）。该谐波度量然后可以使用来进一步优化预定状态空间的晶片偏压电势传递函数。
如所讨论的，数字方法的优点是容易具有可配置性。例如，当使用不同的RF频率和/或附加RF频率和/或少数RF频率时，不需要改变硬件。数字滤波器、传递函数、以及其他优化可以在相同可编程逻辑电路上重新编程，当应用改变时，节省大量的时间和成本。
本发明的另外方面涉及使用附加的等离子体腔参数来提高在ESC RF电压与晶片偏压电势之间的相关性。这些附加腔参数包括腔压强、腔间隙（两个电极之间的距离）、RF发送功率、RF频率、RF发射器阻抗匹配网络档位（可变LC网络的电容器位置）、腔化学性、腔拓扑结构（即：接地面积比）、晶片类型（背侧膜片、基板膜片堆）、以及晶片电阻系数。在当前讨论中，讨论两个具体腔参数（压强和间隙距离）来帮助理解，虽然数字和精确参数会依赖于应用改变。
在本发明的另外方面中，办呢发明的发明人注意到，当涉及的腔压强不同时，在RF电压与晶片电压电势之间的相关性（例如，在趋势线的斜率方面的增加）有明显的改变。通过考虑室电压，可以从ESC RF电压获得晶片偏压电压的更精确的即时确定。补偿函数或方程或度量因子可以凭经验在用于例如后续生产设置使用的研究设置中确定（例如，通过在不同的腔压强映射RF电压与晶片偏压电压之比并且确定相关性变化）。在一实施例中，腔压强信息可以使用作为度量因子以度量不可知压强（pressure-agnostic）传递函数输出。附加地或可替代地，腔压强可以使用作为到传递函数的另一个输入以获得到传递函数的预定输入的具体压强输出。
在本发明的另外方面中，本发明的发明人注意到，当涉及的上电极和下电极之间的腔间隙不同时，在RF电压与晶片电压电势之间的相关性（例如，在趋势线的斜率方面的增加）有明显的改变。通过考虑电极间隙数据，可以从ESC RF电压获得晶片偏压电压的更精确的即时确定。补偿函数或方程或度量因子可以凭经验在用于例如后续生产设置使用的研究设置中确定（例如，通过在不同的腔间隙映射RF电压与晶片偏压电压之比并且确定相关性变化）。在一实施例中，腔间隙信息可以使用作为度量因子以度量不可知压强（pressure-agnostic）传递函数输出。附加地或可替代地，腔间隙可以使用作为到传递函数的另一个输入以获得到传递函数的预定输入的具体压强输出。可以可替代地或附加地关联腔压强信息的使用来实施该利用腔间隙信息的优化。相似的考虑应用到其他腔数据，如果它们用于传递函数的进一步优化。
回过来参考图11，附加的腔数据可以经由恰当的通信接口1152从处理模块1150接收。在图11的示例中，传递函数的实际应用以及利用腔数据的优化利用从方框1120接收的峰值电压（正的和负的）信息和从方框1150接收的腔数据信息在DSP方框1154中执行。然而，也可以在方框1120中执行该传递函数应用和优化，在该情况下，方框1120举例而言会直接从处理模块1150获得腔数据。DSP方框1154的输出表示经计算的晶片电势，并且经由DAC 1156转换回到模拟域以用作到ESC电源单元1160和/或RF发生器1162的反馈或控制信号。例如，由于经计算晶片偏压电势（如本文讨论的计算为RF电压的函数）的提高的精度和准度，可以使用该计算值作为用于输送功率的RF发生器的控制信号，以便对于预定晶片处理步骤保持期望的晶片电势。
注意，可以以讨论过的方式执行模拟分离和峰值检测（根据图5C）并且利用附加腔参数应用附加优化以获得经计算的晶片偏压电势。可替代地，输入RF信号可以如关联图11讨论的直接转换到数字域并且然后在数字域中处理和优化来获得经计算的晶片偏压电势。
通过在数字域中处理ESC RF信号和/或使用独立输入RF发生器信号和/或使用用于相关性优化的附加腔参数，本发明的实施例能够从ESC RF信号获得更精确的经计算晶片偏压电势。该更精确获得的晶片偏压电势继而提高监视等离子体状态的能力，以检测不期望的等离子体情况，例如等离子体不受约束等。
虽然已经考虑多个优选实施例描述了本发明，但是具有落入本发明的范围内的改变、排列、以及等同物。例如，虽然使用来计算晶片偏压电势的RF电压在本文中公开为从ESC或ESC基板获取或者从ESC组件或者ESC附近的其他部件获取的电压，但是RF电压实际上可以在RF输送路径上的任何点测量，并且使用于晶片偏压计算目的。因而，术语“RF电压”及“ESCRF电压”及“ESC RF信号”等不应该因它们在示例中的专有名词的使用而解释为限制性的。还应该注意，具有实施本发明的方法和装置的许多可替代方式。虽然在本文中提供了各个示例，但是旨在这些示例是示意性的并且不限制本发明。
Claims (18)
1.一种控制包括等离子体处理腔的等离子体处理系统的方法，包括：
接收来自所述等离子体处理腔的至少一个部件的RF信号；
在数字域中处理所述RF信号以获得所述RF信号的每个基带频率和宽带频率的峰值电压；以及
基于驱动等离子体的每个单个频率的贡献，通过使用传递函数由所述峰值电压推导晶片偏压信息，其中所述传递函数的输入包括所述每个基带频率和所述宽带频率的峰值电压，每个峰值电压乘以系数以实现用于产生单个结果的所述传递函数，每个系数通过晶片偏压和峰值电压的主成分分析来推导，将所述单个结果相加以便产生所述晶片偏压信息，其中所述晶片偏压信息使用作为用于所述控制所述等离子体处理系统的反馈和控制信号中的一个。
2.如权利要求1所述的方法，其中所述控制所述等离子体处理系统包括保持期望的晶片偏压电势。
3.如权利要求2所述的方法，其中所述RF信号通过电容性传感器部件接收。
4.如权利要求2所述的方法，其中所述推导至少考虑等离子体处理参数数据。
5.如权利要求4所述的方法，其中所述等离子体处理参数数据包括腔压强、腔间隙、RF发送功率、RF频率、RF发生器阻抗匹配网络档位、腔化学性、腔拓扑结构、以及晶片电阻系数中的至少一个。
6.如权利要求5所述的方法，其中所述处理包括考虑独立输入RF信号数据。
7.如权利要求6所述的方法，其中所述处理包括使用所述独立输入RF信号数据来执行数字滤波器的应用于所述处理的调谐。
8.如权利要求6所述的方法，其中所述独立输入RF信号数据包括基带频率和所述RF信号的驱动信号相位中的至少一个。
9.如权利要求4所述的方法，其中所述处理包括利用反混叠滤波器滤波所述RF信号。
10.如权利要求9所述的方法，其中处理还包括在所述滤波之后在所述RF信号上执行模数转换。
11.如权利要求10所述的方法，其中所述反混叠滤波器的滤波器频率小于应用于所述模数转换的模数转换器的采样频率的一半。
12.一种具有至少一个等离子体处理腔和用于从由所述等离子体处理腔的至少一个部件获得的RF信号推导晶片偏压信息的装置的等离子体处理系统，包括：
用于滤波所述RF信号的反混叠滤波器；
用于在所述滤波之后在所述RF信号上执行模数转换的模数转换器；
用于在所述转换之后在数字域中处理所述RF信号以获得所述RF信号的每个基带频率和宽带频率的峰值电压的逻辑电路；以及
用于基于驱动等离子体的每个单个频率的贡献通过使用传递函数从所述峰值电压推导晶片偏压信息的逻辑电路，其中所述传递函数的输入包括所述每个基带频率和所述宽带频率的峰值电压，每个峰值电压乘以系数以实现用于产生单个结果的所述传递函数，每个系数通过晶片偏压和峰值电压的主成分分析来推导，将所述单个结果相加以便产生所述晶片偏压信息，其中所述晶片偏压信息使用作为用于所述控制所述等离子体处理系统的反馈和控制信号中的一个。
13.如权利要求12所述的等离子体处理系统，还包括用于在所述滤波之前接收所述RF信号的电容性传感器部件。
14.如权利要求12所述的等离子体处理系统，其中用于推导的所述逻辑电路在计算所述晶片偏压信息中至少考虑等离子体处理参数数据。
15.如权利要求14所述的等离子体处理系统，其中所述等离子体处理参数数据包括腔压强、腔间隙、RF发送功率、RF频率、RF发生器阻抗匹配网络档位、腔化学性、腔拓扑结构、以及晶片电阻系数中的至少一个。
16.如权利要求15所述的等离子体处理系统，其中用于处理的所述逻辑电路在计算所述每个基带频率和所述宽带频率中考虑独立输入RF信号数据。
17.如权利要求16所述的等离子体处理系统，其中用于处理的所述逻辑电路使用所述独立输入RF信号数据来执行数字滤波器应用于所述处理的调谐。
18.如权利要求15所述的等离子体处理系统，其中所述独立输入RF信号数据包括基带频率和所述RF信号的驱动信号相位中的至少一个。
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| US20130345847A1 (en) | 2013-12-26 |
| TW201237923A (en) | 2012-09-16 |
| TWI541854B (zh) | 2016-07-11 |
| US20160351375A1 (en) | 2016-12-01 |
| TW201737300A (zh) | 2017-10-16 |
| US9455126B2 (en) | 2016-09-27 |
| JP6104813B2 (ja) | 2017-03-29 |
| US9911577B2 (en) | 2018-03-06 |
| WO2012078569A1 (en) | 2012-06-14 |
| US9128473B2 (en) | 2015-09-08 |
| JP2014502027A (ja) | 2014-01-23 |
| KR101858265B1 (ko) | 2018-05-15 |
| CN102652266A (zh) | 2012-08-29 |
| US20110137446A1 (en) | 2011-06-09 |
| US20150332894A1 (en) | 2015-11-19 |
| TWI603369B (zh) | 2017-10-21 |
| TW201637069A (zh) | 2016-10-16 |
| KR20130137070A (ko) | 2013-12-16 |
| US8501631B2 (en) | 2013-08-06 |
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