CN102651305B - 一种ω形鳍片的制备方法 - Google Patents
一种ω形鳍片的制备方法 Download PDFInfo
- Publication number
- CN102651305B CN102651305B CN201110046371.XA CN201110046371A CN102651305B CN 102651305 B CN102651305 B CN 102651305B CN 201110046371 A CN201110046371 A CN 201110046371A CN 102651305 B CN102651305 B CN 102651305B
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- China
- Prior art keywords
- fin
- semiconductor substrate
- dielectric layer
- groove
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000002360 preparation method Methods 0.000 title claims abstract description 17
- 239000000758 substrate Substances 0.000 claims abstract description 53
- 239000004065 semiconductor Substances 0.000 claims abstract description 41
- 238000000034 method Methods 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 21
- 239000010703 silicon Substances 0.000 claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 238000005530 etching Methods 0.000 claims abstract description 13
- 125000006850 spacer group Chemical group 0.000 claims description 17
- 230000015572 biosynthetic process Effects 0.000 claims description 11
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 5
- 238000002955 isolation Methods 0.000 abstract description 4
- 230000010354 integration Effects 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 230000003071 parasitic effect Effects 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 238000010276 construction Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000003989 dielectric material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 239000000654 additive Substances 0.000 description 1
- 230000000996 additive effect Effects 0.000 description 1
- 238000000231 atomic layer deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Element Separation (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110046371.XA CN102651305B (zh) | 2011-02-25 | 2011-02-25 | 一种ω形鳍片的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110046371.XA CN102651305B (zh) | 2011-02-25 | 2011-02-25 | 一种ω形鳍片的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102651305A CN102651305A (zh) | 2012-08-29 |
CN102651305B true CN102651305B (zh) | 2015-09-30 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110046371.XA Active CN102651305B (zh) | 2011-02-25 | 2011-02-25 | 一种ω形鳍片的制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN102651305B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3226302A1 (en) * | 2016-03-30 | 2017-10-04 | Semiconductor Manufacturing International Corporation (Shanghai) | Method for fabricating finfet structure |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN103794497B (zh) * | 2012-10-29 | 2017-08-01 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制备方法 |
CN105632916A (zh) * | 2016-02-22 | 2016-06-01 | 国家纳米科学中心 | 一种变截面硅孔和硅通道的刻蚀方法 |
CN107799420A (zh) * | 2016-09-05 | 2018-03-13 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制作方法、电子装置 |
CN113451121A (zh) * | 2020-03-24 | 2021-09-28 | 广东汉岂工业技术研发有限公司 | FinFET器件的鳍片制作方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101114651A (zh) * | 2006-07-28 | 2008-01-30 | 海力士半导体有限公司 | 具有被包围通道晶体管的半导体器件 |
CN101388344A (zh) * | 2007-09-11 | 2009-03-18 | 硅绝缘体技术有限公司 | 多栅极场效应晶体管结构及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7863674B2 (en) * | 2003-09-24 | 2011-01-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Multiple-gate transistors formed on bulk substrates |
JP2009021503A (ja) * | 2007-07-13 | 2009-01-29 | Elpida Memory Inc | 半導体装置およびその製造方法 |
KR101113794B1 (ko) * | 2008-08-04 | 2012-02-27 | 주식회사 하이닉스반도체 | 반도체 장치 제조 방법 |
-
2011
- 2011-02-25 CN CN201110046371.XA patent/CN102651305B/zh active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101114651A (zh) * | 2006-07-28 | 2008-01-30 | 海力士半导体有限公司 | 具有被包围通道晶体管的半导体器件 |
CN101388344A (zh) * | 2007-09-11 | 2009-03-18 | 硅绝缘体技术有限公司 | 多栅极场效应晶体管结构及其制造方法 |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3226302A1 (en) * | 2016-03-30 | 2017-10-04 | Semiconductor Manufacturing International Corporation (Shanghai) | Method for fabricating finfet structure |
US10084092B2 (en) | 2016-03-30 | 2018-09-25 | Semiconductor Manufacturing International (Shanghai) Corporation | Method for fabricating FinFET structure |
Also Published As
Publication number | Publication date |
---|---|
CN102651305A (zh) | 2012-08-29 |
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Effective date of registration: 20201214 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics of the Chinese Academy of Sciences |
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Effective date of registration: 20220425 Address after: 510000 room 710, Jianshe building, No. 348, Kaifa Avenue, Huangpu District, Guangzhou, Guangdong Patentee after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
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