CN102640262B - 用于基板处理喷洒头的可重置多区气体输送设备 - Google Patents

用于基板处理喷洒头的可重置多区气体输送设备 Download PDF

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Publication number
CN102640262B
CN102640262B CN201080055127.3A CN201080055127A CN102640262B CN 102640262 B CN102640262 B CN 102640262B CN 201080055127 A CN201080055127 A CN 201080055127A CN 102640262 B CN102640262 B CN 102640262B
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CN
China
Prior art keywords
resettable
sprinkler head
inserts
showerhead
plenums
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201080055127.3A
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English (en)
Chinese (zh)
Other versions
CN102640262A (zh
Inventor
汉密第·诺巴卡施
詹姆斯·D·卡达希
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Applied Materials Inc
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Applied Materials Inc
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Publication of CN102640262A publication Critical patent/CN102640262A/zh
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Expired - Fee Related legal-status Critical Current
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49716—Converting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Nozzles (AREA)
CN201080055127.3A 2009-12-04 2010-11-24 用于基板处理喷洒头的可重置多区气体输送设备 Expired - Fee Related CN102640262B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US26682009P 2009-12-04 2009-12-04
US61/266,820 2009-12-04
US12/899,062 US9540731B2 (en) 2009-12-04 2010-10-06 Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads
US12/899,062 2010-10-06
PCT/US2010/057959 WO2011068730A2 (en) 2009-12-04 2010-11-24 Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads

Publications (2)

Publication Number Publication Date
CN102640262A CN102640262A (zh) 2012-08-15
CN102640262B true CN102640262B (zh) 2016-12-07

Family

ID=44115461

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201080055127.3A Expired - Fee Related CN102640262B (zh) 2009-12-04 2010-11-24 用于基板处理喷洒头的可重置多区气体输送设备

Country Status (6)

Country Link
US (1) US9540731B2 (enExample)
JP (1) JP5933447B2 (enExample)
KR (1) KR101438705B1 (enExample)
CN (1) CN102640262B (enExample)
TW (1) TWI502671B (enExample)
WO (1) WO2011068730A2 (enExample)

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US9500405B2 (en) * 2014-10-28 2016-11-22 Lam Research Ag Convective wafer heating by impingement with hot gas
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CN111785604B (zh) * 2019-04-04 2025-04-08 中微半导体设备(上海)股份有限公司 气体喷淋头、制作方法及包括气体喷淋头的等离子体装置
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Also Published As

Publication number Publication date
KR101438705B1 (ko) 2014-09-05
CN102640262A (zh) 2012-08-15
JP5933447B2 (ja) 2016-06-08
TWI502671B (zh) 2015-10-01
TW201130071A (en) 2011-09-01
US20110162800A1 (en) 2011-07-07
WO2011068730A3 (en) 2011-09-09
WO2011068730A2 (en) 2011-06-09
US9540731B2 (en) 2017-01-10
KR20120099759A (ko) 2012-09-11
JP2013513239A (ja) 2013-04-18

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Granted publication date: 20161207