JP2013513239A - 基板処理シャワーヘッド用の再構成可能なマルチゾーンガス供給ハードウェア - Google Patents
基板処理シャワーヘッド用の再構成可能なマルチゾーンガス供給ハードウェア Download PDFInfo
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- JP2013513239A JP2013513239A JP2012542101A JP2012542101A JP2013513239A JP 2013513239 A JP2013513239 A JP 2013513239A JP 2012542101 A JP2012542101 A JP 2012542101A JP 2012542101 A JP2012542101 A JP 2012542101A JP 2013513239 A JP2013513239 A JP 2013513239A
- Authority
- JP
- Japan
- Prior art keywords
- reconfigurable
- showerhead
- plenums
- passages
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000000758 substrate Substances 0.000 title claims abstract description 43
- 239000007789 gas Substances 0.000 claims abstract description 68
- 238000000034 method Methods 0.000 claims abstract description 66
- 230000008569 process Effects 0.000 claims abstract description 62
- 239000012530 fluid Substances 0.000 claims 1
- 238000009826 distribution Methods 0.000 description 11
- 239000000203 mixture Substances 0.000 description 8
- 230000007246 mechanism Effects 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 239000004020 conductor Substances 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009827 uniform distribution Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49716—Converting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Chemical Vapour Deposition (AREA)
- Nozzles (AREA)
Abstract
Description
Claims (15)
- 再構成可能なシャワーヘッドであって、
内部に配置された1以上のプレナムを有する本体と、
1以上のプレナム内に配置されるように構成され、再構成可能なシャワーヘッドを複数のゾーンに分割する1以上のインサートを含む再構成可能なシャワーヘッド。 - 本体は、第2プレートに着脱自在に結合された第1プレートを含み、第1プレート及び第2プレートのうちの少なくとも1つは、内部に形成された1以上の凹部を含み、これによって1以上のプレナムを形成する請求項1記載の再構成可能なシャワーヘッド。
- 本体は、内部に形成された複数の通路を更に含み、複数の通路は、ガス供給部から1以上のプレナムへガスを流すことができるように構成されている請求項1記載の再構成可能なシャワーヘッド。
- 本体は、再構成可能なシャワーヘッドの基板対向面に1以上のプレナムを結合する複数のコンジットを更に含む請求項1〜3のいずれか1項記載の再構成可能なシャワーヘッド。
- 本体の基板対向側に隣接して配置され、内部に形成された複数のコンジットに対応する複数の孔を含む前面プレートを更に含む請求項4記載の再構成可能なシャワーヘッド。
- 前面プレート又は基板対向側本体のうちの少なくとも1つに形成され、複数のコンジットのうちの1つのコンジットと複数の孔のうちの少なくとも1つとの間に結合される凹部を更に含む請求項5記載の再構成可能なシャワーヘッド。
- 1以上のインサートは、ガスの流れが通過できるように内部に形成された1以上の流路を含む請求項1〜3のいずれか1項記載の再構成可能なシャワーヘッド。
- 1以上のインサートは本体とキャップを更に含み、1以上の流路の第1部分は本体内に形成され、1以上の流路の第2部分はキャップ内に形成される請求項7記載の再構成可能なシャワーヘッド。
- 1以上のインサートと1以上のプレナムの壁との間に配置され、1以上のプレナムを2以上のゾーンに分割する1以上のシールを更に含み、2以上のゾーンの各々は、1以上の流路のうちの少なくとも1つを含む請求項7記載の再構成可能なシャワーヘッド。
- 1以上の流路の各々は、入口から複数の通路を通って1以上のプレナム内の複数の出口へと再帰的に広がる請求項7記載の再構成可能なシャワーヘッド。
- 複数の通路の各々は、実質的に等しい流体コンダクタンスを有する請求項10記載の再構成可能なシャワーヘッド。
- 複数の通路の各々は、実質的に等しい流路長を有する請求項10記載の再構成可能なシャワーヘッド。
- 複数の通路の各々は、対応する位置に沿って実質的に等しい断面積を有する請求項10記載の再構成可能なシャワーヘッド。
- 1以上のプロセスガスをプロセスチャンバへ供給するためのガス供給部に結合された前記請求項のいずれか1項記載の再構成可能なシャワーヘッドを有するプロセスチャンバを含む基板処理システム。
- 再構成可能なシャワーヘッドを構成する方法であって、
内部に配置された1以上のプレナムを有する本体と、ガス供給部から1以上のプレナムへガスを流すことができるように構成された複数の通路と、1以上のプレナムを再構成可能なシャワーヘッドの基板対向面に結合する複数のコンジットを提供する工程と、
1以上のプレナム内へ1以上のインサートを挿入し、これによって再構成可能なシャワーヘッドを複数のゾーンに分割する工程を含む方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US26682009P | 2009-12-04 | 2009-12-04 | |
US61/266,820 | 2009-12-04 | ||
US12/899,062 | 2010-10-06 | ||
US12/899,062 US9540731B2 (en) | 2009-12-04 | 2010-10-06 | Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads |
PCT/US2010/057959 WO2011068730A2 (en) | 2009-12-04 | 2010-11-24 | Reconfigurable multi-zone gas delivery hardware for substrate processing showerheads |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2013513239A true JP2013513239A (ja) | 2013-04-18 |
JP2013513239A5 JP2013513239A5 (ja) | 2014-01-16 |
JP5933447B2 JP5933447B2 (ja) | 2016-06-08 |
Family
ID=44115461
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012542101A Active JP5933447B2 (ja) | 2009-12-04 | 2010-11-24 | 基板処理シャワーヘッド用の再構成可能なマルチゾーンガス供給ハードウェア |
Country Status (6)
Country | Link |
---|---|
US (1) | US9540731B2 (ja) |
JP (1) | JP5933447B2 (ja) |
KR (1) | KR101438705B1 (ja) |
CN (1) | CN102640262B (ja) |
TW (1) | TWI502671B (ja) |
WO (1) | WO2011068730A2 (ja) |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9245717B2 (en) * | 2011-05-31 | 2016-01-26 | Lam Research Corporation | Gas distribution system for ceramic showerhead of plasma etch reactor |
US9162236B2 (en) * | 2012-04-26 | 2015-10-20 | Applied Materials, Inc. | Proportional and uniform controlled gas flow delivery for dry plasma etch apparatus |
US9267205B1 (en) * | 2012-05-30 | 2016-02-23 | Alta Devices, Inc. | Fastener system for supporting a liner plate in a gas showerhead reactor |
US9132436B2 (en) * | 2012-09-21 | 2015-09-15 | Applied Materials, Inc. | Chemical control features in wafer process equipment |
US9536710B2 (en) * | 2013-02-25 | 2017-01-03 | Applied Materials, Inc. | Tunable gas delivery assembly with internal diffuser and angular injection |
KR102104018B1 (ko) | 2013-03-12 | 2020-04-23 | 어플라이드 머티어리얼스, 인코포레이티드 | 방위각 및 방사상 분배 제어되는 다중-구역 가스 주입 조립체 |
US20140335679A1 (en) * | 2013-05-09 | 2014-11-13 | Applied Materials, Inc. | Methods for etching a substrate |
US9657397B2 (en) * | 2013-12-31 | 2017-05-23 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
US9597701B2 (en) * | 2013-12-31 | 2017-03-21 | Lam Research Ag | Apparatus for treating surfaces of wafer-shaped articles |
KR101560623B1 (ko) * | 2014-01-03 | 2015-10-15 | 주식회사 유진테크 | 기판처리장치 및 기판처리방법 |
US9500405B2 (en) * | 2014-10-28 | 2016-11-22 | Lam Research Ag | Convective wafer heating by impingement with hot gas |
US10167552B2 (en) * | 2015-02-05 | 2019-01-01 | Lam Research Ag | Spin chuck with rotating gas showerhead |
US10253412B2 (en) * | 2015-05-22 | 2019-04-09 | Lam Research Corporation | Deposition apparatus including edge plenum showerhead assembly |
JP6054470B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置 |
JP5990626B1 (ja) * | 2015-05-26 | 2016-09-14 | 株式会社日本製鋼所 | 原子層成長装置 |
JP6054471B2 (ja) | 2015-05-26 | 2016-12-27 | 株式会社日本製鋼所 | 原子層成長装置および原子層成長装置排気部 |
CN108140550B (zh) * | 2015-10-08 | 2022-10-14 | 应用材料公司 | 具有减少的背侧等离子体点火的喷淋头 |
KR102462931B1 (ko) | 2015-10-30 | 2022-11-04 | 삼성전자주식회사 | 가스 공급 유닛 및 기판 처리 장치 |
US10780447B2 (en) * | 2016-04-26 | 2020-09-22 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
US11017984B2 (en) | 2016-04-28 | 2021-05-25 | Applied Materials, Inc. | Ceramic coated quartz lid for processing chamber |
KR102553629B1 (ko) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
JP6696322B2 (ja) * | 2016-06-24 | 2020-05-20 | 東京エレクトロン株式会社 | ガス処理装置、ガス処理方法及び記憶媒体 |
KR101941488B1 (ko) * | 2016-07-04 | 2019-01-23 | 세메스 주식회사 | 샤워 헤드 유닛 및 이를 가지는 기판 처리 장치 |
US11694911B2 (en) * | 2016-12-20 | 2023-07-04 | Lam Research Corporation | Systems and methods for metastable activated radical selective strip and etch using dual plenum showerhead |
JP6575641B1 (ja) * | 2018-06-28 | 2019-09-18 | 株式会社明電舎 | シャワーヘッドおよび処理装置 |
KR20210027268A (ko) * | 2018-07-31 | 2021-03-10 | 어플라이드 머티어리얼스, 인코포레이티드 | Cvd 챔버를 위한 가스 박스 |
CN111785604A (zh) * | 2019-04-04 | 2020-10-16 | 中微半导体设备(上海)股份有限公司 | 气体喷淋头、制作方法及包括气体喷淋头的等离子体装置 |
US10954595B2 (en) | 2019-07-30 | 2021-03-23 | Applied Materials, Inc. | High power showerhead with recursive gas flow distribution |
US11367594B2 (en) * | 2019-11-27 | 2022-06-21 | Applied Materials, Inc. | Multizone flow gasbox for processing chamber |
US20210404064A1 (en) * | 2020-06-24 | 2021-12-30 | Tokyo Electron Limited | Showerhead for Process Tool |
US20220064797A1 (en) * | 2020-09-02 | 2022-03-03 | Applied Materials, Inc. | Showerhead design to control stray deposition |
US20220108891A1 (en) * | 2020-10-06 | 2022-04-07 | Applied Materials, Inc. | Modular zone control for a processing chamber |
US20220154338A1 (en) * | 2020-11-13 | 2022-05-19 | Applied Materials, Inc. | Apparatus and system for delivering gas to a process chamber |
US12000046B1 (en) | 2021-12-29 | 2024-06-04 | Rolls-Royce High Temperature Composites, Inc. | Load assemblies for loading parts in a furnace |
US11932941B1 (en) * | 2021-12-29 | 2024-03-19 | Rolls-Royce High Temperature Composites, Inc. | Load assemblies for loading parts in a furnace |
WO2024076477A1 (en) * | 2022-10-06 | 2024-04-11 | Lam Research Corporation | Showerhead for diffusion bonded, multi-zone gas dispersion |
Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186140A (ja) * | 1995-10-16 | 1997-07-15 | Applied Materials Inc | プラズマプロセスリアクタのガスインジェクションスリットノズル |
JP2002075692A (ja) * | 2000-04-26 | 2002-03-15 | Unaxis Balzer Ag | プラズマ反応器 |
JP2004079904A (ja) * | 2002-08-21 | 2004-03-11 | Sony Corp | 成膜装置 |
JP2007214295A (ja) * | 2006-02-08 | 2007-08-23 | Tokyo Electron Ltd | ガス供給装置,基板処理装置,ガス供給方法 |
JP2007250860A (ja) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置 |
JP2007535817A (ja) * | 2004-04-30 | 2007-12-06 | ラム リサーチ コーポレーション | シャワーヘッド電極及びヒータを備えるプラズマ処理用の装置 |
JP2008047687A (ja) * | 2006-08-15 | 2008-02-28 | Tokyo Electron Ltd | 基板処理装置、ガス供給装置、基板処理方法及び記憶媒体 |
JP2009016382A (ja) * | 2007-06-29 | 2009-01-22 | Tokyo Electron Ltd | 真空処理装置及び真空処理方法並びに記憶媒体 |
JP2009127131A (ja) * | 2007-11-23 | 2009-06-11 | Applied Materials Inc | コーティング装置及び電極アセンブリの製造方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH05299382A (ja) * | 1992-04-21 | 1993-11-12 | Mitsubishi Electric Corp | プラズマ処理装置およびその方法 |
JP3290036B2 (ja) * | 1994-10-18 | 2002-06-10 | 菱電セミコンダクタシステムエンジニアリング株式会社 | ドライエッチング装置およびドライエッチング方法 |
JPH1116888A (ja) * | 1997-06-24 | 1999-01-22 | Hitachi Ltd | エッチング装置及びその運転方法 |
US6123775A (en) * | 1999-06-30 | 2000-09-26 | Lam Research Corporation | Reaction chamber component having improved temperature uniformity |
US7220937B2 (en) * | 2000-03-17 | 2007-05-22 | Applied Materials, Inc. | Plasma reactor with overhead RF source power electrode with low loss, low arcing tendency and low contamination |
DE10045958B4 (de) * | 2000-09-16 | 2008-12-04 | Muegge Electronic Gmbh | Vorrichtung zum Leiten eines gasförmigen Mediums in eine und/oder aus einer Prozeßkammer |
US20030019428A1 (en) * | 2001-04-28 | 2003-01-30 | Applied Materials, Inc. | Chemical vapor deposition chamber |
US8153281B2 (en) * | 2003-06-23 | 2012-04-10 | Superpower, Inc. | Metalorganic chemical vapor deposition (MOCVD) process and apparatus to produce multi-layer high-temperature superconducting (HTS) coated tape |
JP4513329B2 (ja) * | 2004-01-16 | 2010-07-28 | 東京エレクトロン株式会社 | 処理装置 |
KR101153161B1 (ko) * | 2005-04-01 | 2012-06-18 | 주성엔지니어링(주) | 가스분사장치 및 이를 포함하는 액정표시소자의 제조장치 |
KR20070021637A (ko) | 2005-08-19 | 2007-02-23 | 세메스 주식회사 | 샤워 헤드 및 샤워 헤드를 포함하는 기판 처리 장치 |
JP2007191792A (ja) * | 2006-01-19 | 2007-08-02 | Atto Co Ltd | ガス分離型シャワーヘッド |
US20070215284A1 (en) | 2006-03-16 | 2007-09-20 | Tokyo Electron Limited | Plasma processing apparatus and electrode assembly for plasma processing apparatus |
US8440049B2 (en) * | 2006-05-03 | 2013-05-14 | Applied Materials, Inc. | Apparatus for etching high aspect ratio features |
JP5463536B2 (ja) * | 2006-07-20 | 2014-04-09 | 北陸成型工業株式会社 | シャワープレート及びその製造方法、並びにそのシャワープレートを用いたプラズマ処理装置、プラズマ処理方法及び電子装置の製造方法 |
US20080078746A1 (en) | 2006-08-15 | 2008-04-03 | Noriiki Masuda | Substrate processing system, gas supply unit, method of substrate processing, computer program, and storage medium |
ES2331489T3 (es) * | 2007-03-05 | 2010-01-05 | Applied Materials, Inc. | Instalacion de revestimiento y sistema de conduccion de gas. |
US20090133631A1 (en) * | 2007-11-23 | 2009-05-28 | Applied Materials Inc. | Coating device and method of producing an electrode assembly |
US20090275206A1 (en) * | 2008-05-05 | 2009-11-05 | Applied Materials, Inc. | Plasma process employing multiple zone gas distribution for improved uniformity of critical dimension bias |
-
2010
- 2010-10-06 US US12/899,062 patent/US9540731B2/en active Active
- 2010-11-24 WO PCT/US2010/057959 patent/WO2011068730A2/en active Application Filing
- 2010-11-24 CN CN201080055127.3A patent/CN102640262B/zh not_active Expired - Fee Related
- 2010-11-24 KR KR1020127017429A patent/KR101438705B1/ko active IP Right Grant
- 2010-11-24 JP JP2012542101A patent/JP5933447B2/ja active Active
- 2010-12-03 TW TW099142151A patent/TWI502671B/zh active
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09186140A (ja) * | 1995-10-16 | 1997-07-15 | Applied Materials Inc | プラズマプロセスリアクタのガスインジェクションスリットノズル |
JP2002075692A (ja) * | 2000-04-26 | 2002-03-15 | Unaxis Balzer Ag | プラズマ反応器 |
JP2004079904A (ja) * | 2002-08-21 | 2004-03-11 | Sony Corp | 成膜装置 |
JP2007535817A (ja) * | 2004-04-30 | 2007-12-06 | ラム リサーチ コーポレーション | シャワーヘッド電極及びヒータを備えるプラズマ処理用の装置 |
JP2007214295A (ja) * | 2006-02-08 | 2007-08-23 | Tokyo Electron Ltd | ガス供給装置,基板処理装置,ガス供給方法 |
JP2007250860A (ja) * | 2006-03-16 | 2007-09-27 | Tokyo Electron Ltd | プラズマ処理装置用電極アッセンブリ及びプラズマ処理装置 |
JP2008047687A (ja) * | 2006-08-15 | 2008-02-28 | Tokyo Electron Ltd | 基板処理装置、ガス供給装置、基板処理方法及び記憶媒体 |
JP2009016382A (ja) * | 2007-06-29 | 2009-01-22 | Tokyo Electron Ltd | 真空処理装置及び真空処理方法並びに記憶媒体 |
JP2009127131A (ja) * | 2007-11-23 | 2009-06-11 | Applied Materials Inc | コーティング装置及び電極アセンブリの製造方法 |
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CN102640262A (zh) | 2012-08-15 |
JP5933447B2 (ja) | 2016-06-08 |
TW201130071A (en) | 2011-09-01 |
KR20120099759A (ko) | 2012-09-11 |
WO2011068730A3 (en) | 2011-09-09 |
WO2011068730A2 (en) | 2011-06-09 |
US20110162800A1 (en) | 2011-07-07 |
KR101438705B1 (ko) | 2014-09-05 |
US9540731B2 (en) | 2017-01-10 |
TWI502671B (zh) | 2015-10-01 |
CN102640262B (zh) | 2016-12-07 |
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