CN102625864A - 在经调节压力下使用氦的高温工艺改进 - Google Patents

在经调节压力下使用氦的高温工艺改进 Download PDF

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Publication number
CN102625864A
CN102625864A CN2010800392313A CN201080039231A CN102625864A CN 102625864 A CN102625864 A CN 102625864A CN 2010800392313 A CN2010800392313 A CN 2010800392313A CN 201080039231 A CN201080039231 A CN 201080039231A CN 102625864 A CN102625864 A CN 102625864A
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hot
zone
pressure
smelting furnace
reactive gas
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Chinese (zh)
Inventor
弗雷德里克·施密德
大卫·B·乔伊斯
约翰·布罗莱特
丹尼尔·P·贝迪
莱安·费尔伯特
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Gtat Co
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GT Crystal Systems LLC
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Priority to CN201611138038.0A priority Critical patent/CN106948004A/zh
Publication of CN102625864A publication Critical patent/CN102625864A/zh
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
CN2010800392313A 2009-09-02 2010-09-01 在经调节压力下使用氦的高温工艺改进 Pending CN102625864A (zh)

Priority Applications (1)

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Applications Claiming Priority (5)

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US23922809P 2009-09-02 2009-09-02
US61/239,228 2009-09-02
US12/873,388 2010-09-01
PCT/US2010/047506 WO2011028787A1 (en) 2009-09-02 2010-09-01 High-temperature process improvements using helium under regulated pressure
US12/873,388 US9546434B2 (en) 2009-09-02 2010-09-01 High-temperature process improvements using helium under regulated pressure

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CN201611138038.0A Pending CN106948004A (zh) 2009-09-02 2010-09-01 在经调节压力下使用氦的高温工艺改进

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US (2) US9546434B2 (enExample)
JP (3) JP2013503811A (enExample)
KR (3) KR20120083333A (enExample)
CN (2) CN102625864A (enExample)
TW (1) TWI519684B (enExample)
WO (1) WO2011028787A1 (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103173855A (zh) * 2013-03-12 2013-06-26 贵阳嘉瑜光电科技咨询中心 一种惰性气体保护下的hem晶体生长方法
CN107130289A (zh) * 2017-06-13 2017-09-05 江苏吉星新材料有限公司 一种改进热交换大尺寸蓝宝石晶体的生长方法
CN108588832A (zh) * 2018-04-28 2018-09-28 内蒙古恒嘉晶体材料有限公司 制备蓝宝石晶体的改进的泡生法及晶体生长炉
CN112501690A (zh) * 2020-12-02 2021-03-16 通辽精工蓝宝石有限公司 一种蓝宝石单晶的生长方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110179992A1 (en) * 2008-10-24 2011-07-28 Schwerdtfeger Jr Carl Richard Crystal growth methods and systems
JP5838727B2 (ja) * 2011-10-28 2016-01-06 株式会社Sumco サファイア単結晶の製造方法及び製造装置
CN102605426B (zh) * 2012-03-14 2015-05-13 苏州先端稀有金属有限公司 一种用于超高温状态下产生温差的热场结构
US9407746B2 (en) * 2012-12-27 2016-08-02 Gtat Corporation Mobile electronic device comprising a sapphire cover plate having a low level of inclusions
WO2015047828A1 (en) * 2013-09-30 2015-04-02 Gt Crystal Systems, Llc A technique for controlling temperature uniformity in crystal growth apparatus
AT524602B1 (de) * 2020-12-29 2023-05-15 Fametec Gmbh Vorrichtung zur Herstellung eines Einkristalls
TWI811639B (zh) * 2021-02-25 2023-08-11 環球晶圓股份有限公司 長晶純化設備及熱場配件純化方法
CN113880460B (zh) * 2021-11-10 2022-04-08 沃米真玻科技(北京)有限公司 真空玻璃封边抽真空封口一体化加热炉和连续生产线
CN115369489A (zh) * 2022-07-29 2022-11-22 江西兆驰半导体有限公司 一种衬底片无氧退火炉、退火方法以及衬底片
CN117702259A (zh) * 2024-02-06 2024-03-15 宁波合盛新材料有限公司 一种pvt炉快速降温的方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
US4096025A (en) * 1974-02-21 1978-06-20 The United States Of America As Represented By The Secretary Of The Army Method of orienting seed crystals in a melt, and product obtained thereby
US4116641A (en) * 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
US4330362A (en) * 1978-05-17 1982-05-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Device and process for pulling high-purity semiconductor rods from a melt
EP0516014B1 (en) * 1991-05-30 1996-02-07 Chichibu Cement Co., Ltd. Rutile single crystals and their growth processes
CN1485467A (zh) * 2003-08-08 2004-03-31 中国科学院上海光学精密机械研究所 大面积晶体的温梯法生长装置及其生长晶体的方法
CN1986905A (zh) * 2005-12-21 2007-06-27 北京有色金属研究总院 一种晶体生长的装置及方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3058915A (en) * 1960-01-18 1962-10-16 Westinghouse Electric Corp Crystal growing process
US3653432A (en) * 1970-09-01 1972-04-04 Us Army Apparatus and method for unidirectionally solidifying high temperature material
JPS5529011B2 (enExample) * 1972-12-07 1980-07-31
US3998686A (en) * 1975-03-10 1976-12-21 Corning Glass Works Sapphire growth from the melt using porous alumina raw batch material
DE2700994C2 (de) * 1976-04-16 1986-02-06 International Business Machines Corp., Armonk, N.Y. Verfahren und Vorrichtung zum Ziehen von kristallinen Siliciumkörpern
US4256530A (en) * 1978-12-07 1981-03-17 Crystal Systems Inc. Crystal growing
JPH0777994B2 (ja) * 1989-11-16 1995-08-23 信越半導体株式会社 単結晶の酸素濃度コントロール方法及び装置
JP3360626B2 (ja) * 1998-12-01 2002-12-24 三菱住友シリコン株式会社 シリコン単結晶の製造方法
US6749683B2 (en) * 2000-02-14 2004-06-15 Memc Electronic Materials, Inc. Process for producing a silicon melt
US6543466B2 (en) * 2000-03-02 2003-04-08 Rajinder S. Gill Mass flow controller and method of operation of mass flow controller
DE102006017622B4 (de) * 2006-04-12 2008-03-27 Schott Ag Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium
JP2008007354A (ja) * 2006-06-28 2008-01-17 Sumitomo Metal Mining Co Ltd サファイア単結晶の育成方法
US8152921B2 (en) * 2006-09-01 2012-04-10 Okmetic Oyj Crystal manufacturing
DE102007020006A1 (de) * 2007-04-27 2008-10-30 Freiberger Compound Materials Gmbh Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen
US20080271447A1 (en) * 2007-05-03 2008-11-06 Abel John B Method and apparatus for supplying air to an emission abatement device by use of a turbocharger

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3898051A (en) * 1973-12-28 1975-08-05 Crystal Syst Crystal growing
US4096025A (en) * 1974-02-21 1978-06-20 The United States Of America As Represented By The Secretary Of The Army Method of orienting seed crystals in a melt, and product obtained thereby
US4116641A (en) * 1976-04-16 1978-09-26 International Business Machines Corporation Apparatus for pulling crystal ribbons from a truncated wedge shaped die
US4330362A (en) * 1978-05-17 1982-05-18 Wacker-Chemitronic Gesellschaft Fur Elektronik-Grundstoffe Mbh Device and process for pulling high-purity semiconductor rods from a melt
EP0516014B1 (en) * 1991-05-30 1996-02-07 Chichibu Cement Co., Ltd. Rutile single crystals and their growth processes
CN1485467A (zh) * 2003-08-08 2004-03-31 中国科学院上海光学精密机械研究所 大面积晶体的温梯法生长装置及其生长晶体的方法
CN1986905A (zh) * 2005-12-21 2007-06-27 北京有色金属研究总院 一种晶体生长的装置及方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103173855A (zh) * 2013-03-12 2013-06-26 贵阳嘉瑜光电科技咨询中心 一种惰性气体保护下的hem晶体生长方法
CN103173855B (zh) * 2013-03-12 2016-01-06 贵阳嘉瑜光电科技咨询中心 一种惰性气体保护下的hem晶体生长方法
CN107130289A (zh) * 2017-06-13 2017-09-05 江苏吉星新材料有限公司 一种改进热交换大尺寸蓝宝石晶体的生长方法
CN108588832A (zh) * 2018-04-28 2018-09-28 内蒙古恒嘉晶体材料有限公司 制备蓝宝石晶体的改进的泡生法及晶体生长炉
CN108588832B (zh) * 2018-04-28 2021-09-24 内蒙古恒嘉晶体材料有限公司 制备蓝宝石晶体的改进的泡生法及晶体生长炉
CN112501690A (zh) * 2020-12-02 2021-03-16 通辽精工蓝宝石有限公司 一种蓝宝石单晶的生长方法

Also Published As

Publication number Publication date
WO2011028787A1 (en) 2011-03-10
KR101975735B1 (ko) 2019-05-07
KR20180115815A (ko) 2018-10-23
CN106948004A (zh) 2017-07-14
JP2017100945A (ja) 2017-06-08
US20170096746A1 (en) 2017-04-06
TWI519684B (zh) 2016-02-01
US9546434B2 (en) 2017-01-17
JP2013503811A (ja) 2013-02-04
TW201129728A (en) 2011-09-01
KR20120083333A (ko) 2012-07-25
JP2015129089A (ja) 2015-07-16
JP6423908B2 (ja) 2018-11-14
US20110048316A1 (en) 2011-03-03
KR20170109081A (ko) 2017-09-27

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