TWI519684B - 在控制壓力下使用氦氣之高溫製程改良 - Google Patents
在控制壓力下使用氦氣之高溫製程改良 Download PDFInfo
- Publication number
- TWI519684B TWI519684B TW099129604A TW99129604A TWI519684B TW I519684 B TWI519684 B TW I519684B TW 099129604 A TW099129604 A TW 099129604A TW 99129604 A TW99129604 A TW 99129604A TW I519684 B TWI519684 B TW I519684B
- Authority
- TW
- Taiwan
- Prior art keywords
- hot zone
- furnace
- pressure
- reactive gas
- helium
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 78
- 239000001307 helium Substances 0.000 title claims description 58
- 229910052734 helium Inorganic materials 0.000 title claims description 58
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 title claims description 57
- 230000008569 process Effects 0.000 title description 29
- 230000001105 regulatory effect Effects 0.000 title description 3
- 239000007789 gas Substances 0.000 claims description 72
- 238000006243 chemical reaction Methods 0.000 claims description 69
- 239000013078 crystal Substances 0.000 claims description 65
- 229910052594 sapphire Inorganic materials 0.000 claims description 25
- 239000010980 sapphire Substances 0.000 claims description 25
- 238000001816 cooling Methods 0.000 claims description 17
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 14
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 13
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000012535 impurity Substances 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 230000008018 melting Effects 0.000 claims description 9
- 238000002844 melting Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 7
- 239000000112 cooling gas Substances 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- 238000000137 annealing Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 238000007711 solidification Methods 0.000 claims description 4
- 230000008023 solidification Effects 0.000 claims description 4
- 230000007547 defect Effects 0.000 claims description 3
- 230000000977 initiatory effect Effects 0.000 claims description 2
- 238000011068 loading method Methods 0.000 claims description 2
- 238000010899 nucleation Methods 0.000 claims description 2
- 230000000087 stabilizing effect Effects 0.000 claims description 2
- FGUUSXIOTUKUDN-IBGZPJMESA-N C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 Chemical compound C1(=CC=CC=C1)N1C2=C(NC([C@H](C1)NC=1OC(=NN=1)C1=CC=CC=C1)=O)C=CC=C2 FGUUSXIOTUKUDN-IBGZPJMESA-N 0.000 claims 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 238000011010 flushing procedure Methods 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 21
- 239000000463 material Substances 0.000 description 21
- 229910002804 graphite Inorganic materials 0.000 description 13
- 239000010439 graphite Substances 0.000 description 13
- 229910052593 corundum Inorganic materials 0.000 description 12
- 239000010431 corundum Substances 0.000 description 12
- 230000012010 growth Effects 0.000 description 12
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 description 11
- 229910002091 carbon monoxide Inorganic materials 0.000 description 11
- 239000002178 crystalline material Substances 0.000 description 9
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 7
- 229910052799 carbon Inorganic materials 0.000 description 7
- 238000000354 decomposition reaction Methods 0.000 description 7
- 239000012212 insulator Substances 0.000 description 7
- 238000004886 process control Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 230000003698 anagen phase Effects 0.000 description 4
- 238000004458 analytical method Methods 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 229910052760 oxygen Inorganic materials 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 238000000859 sublimation Methods 0.000 description 4
- 230000008022 sublimation Effects 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- 238000000149 argon plasma sintering Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000011819 refractory material Substances 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000009834 vaporization Methods 0.000 description 3
- 230000008016 vaporization Effects 0.000 description 3
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000000356 contaminant Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000010517 secondary reaction Methods 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 229910002090 carbon oxide Inorganic materials 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 239000004035 construction material Substances 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000002109 crystal growth method Methods 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000002371 helium Chemical class 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 229910000476 molybdenum oxide Inorganic materials 0.000 description 1
- YUSUJSHEOICGOO-UHFFFAOYSA-N molybdenum rhenium Chemical compound [Mo].[Mo].[Re].[Re].[Re] YUSUJSHEOICGOO-UHFFFAOYSA-N 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 229910052704 radon Inorganic materials 0.000 description 1
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 1
- 229910052707 ruthenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 150000003384 small molecules Chemical class 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/16—Oxides
- C30B29/20—Aluminium oxides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/006—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
- C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US23922809P | 2009-09-02 | 2009-09-02 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201129728A TW201129728A (en) | 2011-09-01 |
| TWI519684B true TWI519684B (zh) | 2016-02-01 |
Family
ID=43622958
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099129604A TWI519684B (zh) | 2009-09-02 | 2010-09-01 | 在控制壓力下使用氦氣之高溫製程改良 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9546434B2 (enExample) |
| JP (3) | JP2013503811A (enExample) |
| KR (3) | KR20120083333A (enExample) |
| CN (2) | CN102625864A (enExample) |
| TW (1) | TWI519684B (enExample) |
| WO (1) | WO2011028787A1 (enExample) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20110179992A1 (en) * | 2008-10-24 | 2011-07-28 | Schwerdtfeger Jr Carl Richard | Crystal growth methods and systems |
| JP5838727B2 (ja) * | 2011-10-28 | 2016-01-06 | 株式会社Sumco | サファイア単結晶の製造方法及び製造装置 |
| CN102605426B (zh) * | 2012-03-14 | 2015-05-13 | 苏州先端稀有金属有限公司 | 一种用于超高温状态下产生温差的热场结构 |
| US9407746B2 (en) * | 2012-12-27 | 2016-08-02 | Gtat Corporation | Mobile electronic device comprising a sapphire cover plate having a low level of inclusions |
| CN103173855B (zh) * | 2013-03-12 | 2016-01-06 | 贵阳嘉瑜光电科技咨询中心 | 一种惰性气体保护下的hem晶体生长方法 |
| WO2015047828A1 (en) * | 2013-09-30 | 2015-04-02 | Gt Crystal Systems, Llc | A technique for controlling temperature uniformity in crystal growth apparatus |
| CN107130289A (zh) * | 2017-06-13 | 2017-09-05 | 江苏吉星新材料有限公司 | 一种改进热交换大尺寸蓝宝石晶体的生长方法 |
| CN108588832B (zh) * | 2018-04-28 | 2021-09-24 | 内蒙古恒嘉晶体材料有限公司 | 制备蓝宝石晶体的改进的泡生法及晶体生长炉 |
| CN112501690A (zh) * | 2020-12-02 | 2021-03-16 | 通辽精工蓝宝石有限公司 | 一种蓝宝石单晶的生长方法 |
| AT524602B1 (de) * | 2020-12-29 | 2023-05-15 | Fametec Gmbh | Vorrichtung zur Herstellung eines Einkristalls |
| TWI811639B (zh) * | 2021-02-25 | 2023-08-11 | 環球晶圓股份有限公司 | 長晶純化設備及熱場配件純化方法 |
| CN113880460B (zh) * | 2021-11-10 | 2022-04-08 | 沃米真玻科技(北京)有限公司 | 真空玻璃封边抽真空封口一体化加热炉和连续生产线 |
| CN115369489A (zh) * | 2022-07-29 | 2022-11-22 | 江西兆驰半导体有限公司 | 一种衬底片无氧退火炉、退火方法以及衬底片 |
| CN117702259A (zh) * | 2024-02-06 | 2024-03-15 | 宁波合盛新材料有限公司 | 一种pvt炉快速降温的方法 |
Family Cites Families (22)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3058915A (en) * | 1960-01-18 | 1962-10-16 | Westinghouse Electric Corp | Crystal growing process |
| US3653432A (en) * | 1970-09-01 | 1972-04-04 | Us Army | Apparatus and method for unidirectionally solidifying high temperature material |
| JPS5529011B2 (enExample) * | 1972-12-07 | 1980-07-31 | ||
| US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
| US4096025A (en) * | 1974-02-21 | 1978-06-20 | The United States Of America As Represented By The Secretary Of The Army | Method of orienting seed crystals in a melt, and product obtained thereby |
| US3998686A (en) * | 1975-03-10 | 1976-12-21 | Corning Glass Works | Sapphire growth from the melt using porous alumina raw batch material |
| DE2700994C2 (de) * | 1976-04-16 | 1986-02-06 | International Business Machines Corp., Armonk, N.Y. | Verfahren und Vorrichtung zum Ziehen von kristallinen Siliciumkörpern |
| US4116641A (en) * | 1976-04-16 | 1978-09-26 | International Business Machines Corporation | Apparatus for pulling crystal ribbons from a truncated wedge shaped die |
| DE2821481C2 (de) * | 1978-05-17 | 1985-12-05 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Vorrichtung zum Ziehen von hochreinen Halbleiterstäben aus der Schmelze |
| US4256530A (en) * | 1978-12-07 | 1981-03-17 | Crystal Systems Inc. | Crystal growing |
| JPH0777994B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の酸素濃度コントロール方法及び装置 |
| DE69208146T2 (de) * | 1991-05-30 | 1996-06-20 | Chichibu Cement Kk | Rutil-Einkristalle sowie Verfahren zu deren Zuchtung |
| JP3360626B2 (ja) * | 1998-12-01 | 2002-12-24 | 三菱住友シリコン株式会社 | シリコン単結晶の製造方法 |
| US6749683B2 (en) * | 2000-02-14 | 2004-06-15 | Memc Electronic Materials, Inc. | Process for producing a silicon melt |
| US6543466B2 (en) * | 2000-03-02 | 2003-04-08 | Rajinder S. Gill | Mass flow controller and method of operation of mass flow controller |
| CN1485467A (zh) * | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | 大面积晶体的温梯法生长装置及其生长晶体的方法 |
| CN100404730C (zh) * | 2005-12-21 | 2008-07-23 | 北京有色金属研究总院 | 一种晶体生长的装置及方法 |
| DE102006017622B4 (de) * | 2006-04-12 | 2008-03-27 | Schott Ag | Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium |
| JP2008007354A (ja) * | 2006-06-28 | 2008-01-17 | Sumitomo Metal Mining Co Ltd | サファイア単結晶の育成方法 |
| US8152921B2 (en) * | 2006-09-01 | 2012-04-10 | Okmetic Oyj | Crystal manufacturing |
| DE102007020006A1 (de) * | 2007-04-27 | 2008-10-30 | Freiberger Compound Materials Gmbh | Vorrichtung und Verfahren zur Herstellung von poly- oder multikristallinem Silizium, dadurch hergestellter Masseblock (Ingot) sowie Wafer aus poly- oder multikristallinem Silizium, und Verwendung zur Herstellung von Solarzellen |
| US20080271447A1 (en) * | 2007-05-03 | 2008-11-06 | Abel John B | Method and apparatus for supplying air to an emission abatement device by use of a turbocharger |
-
2010
- 2010-09-01 US US12/873,388 patent/US9546434B2/en active Active
- 2010-09-01 KR KR1020127006660A patent/KR20120083333A/ko not_active Ceased
- 2010-09-01 KR KR1020177026254A patent/KR20170109081A/ko not_active Ceased
- 2010-09-01 TW TW099129604A patent/TWI519684B/zh active
- 2010-09-01 CN CN2010800392313A patent/CN102625864A/zh active Pending
- 2010-09-01 WO PCT/US2010/047506 patent/WO2011028787A1/en not_active Ceased
- 2010-09-01 JP JP2012528006A patent/JP2013503811A/ja active Pending
- 2010-09-01 CN CN201611138038.0A patent/CN106948004A/zh active Pending
- 2010-09-01 KR KR1020187029893A patent/KR101975735B1/ko active Active
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2015
- 2015-03-04 JP JP2015042550A patent/JP2015129089A/ja active Pending
-
2016
- 2016-12-19 US US15/383,388 patent/US20170096746A1/en not_active Abandoned
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2017
- 2017-03-14 JP JP2017048092A patent/JP6423908B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| WO2011028787A1 (en) | 2011-03-10 |
| KR101975735B1 (ko) | 2019-05-07 |
| KR20180115815A (ko) | 2018-10-23 |
| CN106948004A (zh) | 2017-07-14 |
| JP2017100945A (ja) | 2017-06-08 |
| US20170096746A1 (en) | 2017-04-06 |
| US9546434B2 (en) | 2017-01-17 |
| JP2013503811A (ja) | 2013-02-04 |
| TW201129728A (en) | 2011-09-01 |
| CN102625864A (zh) | 2012-08-01 |
| KR20120083333A (ko) | 2012-07-25 |
| JP2015129089A (ja) | 2015-07-16 |
| JP6423908B2 (ja) | 2018-11-14 |
| US20110048316A1 (en) | 2011-03-03 |
| KR20170109081A (ko) | 2017-09-27 |
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