KR20120083333A - 조절된 압력하에 헬륨을 사용하는 고온 처리 방법 - Google Patents

조절된 압력하에 헬륨을 사용하는 고온 처리 방법 Download PDF

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KR20120083333A
KR20120083333A KR1020127006660A KR20127006660A KR20120083333A KR 20120083333 A KR20120083333 A KR 20120083333A KR 1020127006660 A KR1020127006660 A KR 1020127006660A KR 20127006660 A KR20127006660 A KR 20127006660A KR 20120083333 A KR20120083333 A KR 20120083333A
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furnace
heating zone
pressure
reactive gas
reaction
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Korean (ko)
Inventor
프레더릭 쉬미드
데이비드 비. 조이스
존 브로우일렛
다니엘 피. 베티
리안 필포트
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지티 크리스탈 시스템스, 엘엘씨
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Publication of KR20120083333A publication Critical patent/KR20120083333A/ko
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/20—Aluminium oxides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/006—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/02—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method without using solvents
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B7/00—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions
    • C30B7/10—Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions by application of pressure, e.g. hydrothermal processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B17/00—Single-crystal growth onto a seed which remains in the melt during growth, e.g. Nacken-Kyropoulos method
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1004—Apparatus with means for measuring, testing, or sensing
    • Y10T117/1008—Apparatus with means for measuring, testing, or sensing with responsive control means
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10T117/10—Apparatus
    • Y10T117/1024—Apparatus for crystallization from liquid or supercritical state

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
KR1020127006660A 2009-09-02 2010-09-01 조절된 압력하에 헬륨을 사용하는 고온 처리 방법 Ceased KR20120083333A (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US23922809P 2009-09-02 2009-09-02
US61/239,228 2009-09-02
US12/873,388 2010-09-01
US12/873,388 US9546434B2 (en) 2009-09-02 2010-09-01 High-temperature process improvements using helium under regulated pressure

Related Child Applications (1)

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KR1020177026254A Division KR20170109081A (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법

Publications (1)

Publication Number Publication Date
KR20120083333A true KR20120083333A (ko) 2012-07-25

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KR1020127006660A Ceased KR20120083333A (ko) 2009-09-02 2010-09-01 조절된 압력하에 헬륨을 사용하는 고온 처리 방법
KR1020177026254A Ceased KR20170109081A (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법
KR1020187029893A Active KR101975735B1 (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법

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KR1020187029893A Active KR101975735B1 (ko) 2009-09-02 2010-09-01 조절된 압력하에서 헬륨을 사용하는 고온 처리 방법

Country Status (6)

Country Link
US (2) US9546434B2 (enExample)
JP (3) JP2013503811A (enExample)
KR (3) KR20120083333A (enExample)
CN (2) CN102625864A (enExample)
TW (1) TWI519684B (enExample)
WO (1) WO2011028787A1 (enExample)

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US20110179992A1 (en) * 2008-10-24 2011-07-28 Schwerdtfeger Jr Carl Richard Crystal growth methods and systems
JP5838727B2 (ja) * 2011-10-28 2016-01-06 株式会社Sumco サファイア単結晶の製造方法及び製造装置
CN102605426B (zh) * 2012-03-14 2015-05-13 苏州先端稀有金属有限公司 一种用于超高温状态下产生温差的热场结构
US9407746B2 (en) * 2012-12-27 2016-08-02 Gtat Corporation Mobile electronic device comprising a sapphire cover plate having a low level of inclusions
CN103173855B (zh) * 2013-03-12 2016-01-06 贵阳嘉瑜光电科技咨询中心 一种惰性气体保护下的hem晶体生长方法
WO2015047828A1 (en) * 2013-09-30 2015-04-02 Gt Crystal Systems, Llc A technique for controlling temperature uniformity in crystal growth apparatus
CN107130289A (zh) * 2017-06-13 2017-09-05 江苏吉星新材料有限公司 一种改进热交换大尺寸蓝宝石晶体的生长方法
CN108588832B (zh) * 2018-04-28 2021-09-24 内蒙古恒嘉晶体材料有限公司 制备蓝宝石晶体的改进的泡生法及晶体生长炉
CN112501690A (zh) * 2020-12-02 2021-03-16 通辽精工蓝宝石有限公司 一种蓝宝石单晶的生长方法
AT524602B1 (de) * 2020-12-29 2023-05-15 Fametec Gmbh Vorrichtung zur Herstellung eines Einkristalls
TWI811639B (zh) * 2021-02-25 2023-08-11 環球晶圓股份有限公司 長晶純化設備及熱場配件純化方法
CN113880460B (zh) * 2021-11-10 2022-04-08 沃米真玻科技(北京)有限公司 真空玻璃封边抽真空封口一体化加热炉和连续生产线
CN115369489A (zh) * 2022-07-29 2022-11-22 江西兆驰半导体有限公司 一种衬底片无氧退火炉、退火方法以及衬底片
CN117702259A (zh) * 2024-02-06 2024-03-15 宁波合盛新材料有限公司 一种pvt炉快速降温的方法

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Also Published As

Publication number Publication date
WO2011028787A1 (en) 2011-03-10
KR101975735B1 (ko) 2019-05-07
KR20180115815A (ko) 2018-10-23
CN106948004A (zh) 2017-07-14
JP2017100945A (ja) 2017-06-08
US20170096746A1 (en) 2017-04-06
TWI519684B (zh) 2016-02-01
US9546434B2 (en) 2017-01-17
JP2013503811A (ja) 2013-02-04
TW201129728A (en) 2011-09-01
CN102625864A (zh) 2012-08-01
JP2015129089A (ja) 2015-07-16
JP6423908B2 (ja) 2018-11-14
US20110048316A1 (en) 2011-03-03
KR20170109081A (ko) 2017-09-27

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