CN102592002B - 产生掩模数据的方法、制造掩模的方法和曝光方法 - Google Patents

产生掩模数据的方法、制造掩模的方法和曝光方法 Download PDF

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Publication number
CN102592002B
CN102592002B CN201110333535.7A CN201110333535A CN102592002B CN 102592002 B CN102592002 B CN 102592002B CN 201110333535 A CN201110333535 A CN 201110333535A CN 102592002 B CN102592002 B CN 102592002B
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China
Prior art keywords
pattern
mask
parameter
value
auxiliary
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CN201110333535.7A
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English (en)
Chinese (zh)
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CN102592002A (zh
Inventor
石井弘之
辻田好一郎
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Canon Inc
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • H10P76/2041—

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
CN201110333535.7A 2010-10-29 2011-10-28 产生掩模数据的方法、制造掩模的方法和曝光方法 Active CN102592002B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2010244368A JP5627394B2 (ja) 2010-10-29 2010-10-29 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法
JP2010-244368 2010-10-29

Publications (2)

Publication Number Publication Date
CN102592002A CN102592002A (zh) 2012-07-18
CN102592002B true CN102592002B (zh) 2015-06-03

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CN201110333535.7A Active CN102592002B (zh) 2010-10-29 2011-10-28 产生掩模数据的方法、制造掩模的方法和曝光方法

Country Status (5)

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US (1) US8949748B2 (enExample)
JP (1) JP5627394B2 (enExample)
KR (1) KR101375376B1 (enExample)
CN (1) CN102592002B (enExample)
TW (1) TWI444787B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6039910B2 (ja) * 2012-03-15 2016-12-07 キヤノン株式会社 生成方法、プログラム及び情報処理装置
JP6108693B2 (ja) * 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置
CN103631096B (zh) * 2013-12-06 2015-05-20 北京理工大学 基于Abbe矢量成像模型的光源-掩模-偏振态联合优化方法
CN105607413B (zh) * 2016-03-18 2019-11-01 京东方科技集团股份有限公司 产生掩膜图案的系统和方法以及曝光系统
JP6952711B2 (ja) * 2016-04-04 2021-10-20 ケーエルエー コーポレイション ターゲットデザイン方法、製造方法及び計量ターゲット
US10083833B1 (en) * 2017-06-21 2018-09-25 Arm Limited Integration fill technique
JPWO2019138940A1 (ja) * 2018-01-10 2020-12-24 凸版印刷株式会社 フォトマスク
CN113109990B (zh) * 2020-01-09 2022-08-26 中芯国际集成电路制造(北京)有限公司 掩膜版版图的修正方法
TWI796008B (zh) * 2021-11-22 2023-03-11 力晶積成電子製造股份有限公司 光罩以及半導體元件的製造方法

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3577363B2 (ja) * 1994-06-29 2004-10-13 株式会社ルネサステクノロジ 半導体装置の製造方法
KR960002536A (enExample) * 1994-06-29 1996-01-26
US6335130B1 (en) 2000-05-01 2002-01-01 Asml Masktools Netherlands B.V. System and method of providing optical proximity correction for features using phase-shifted halftone transparent/semi-transparent features
EP1249734B1 (en) * 2001-04-11 2012-04-18 Fujitsu Semiconductor Limited Rectangle/lattice data conversion method for charged particle beam exposure mask pattern and charged particle beam exposure method
JP3754934B2 (ja) * 2002-04-23 2006-03-15 キヤノン株式会社 マスクパターン及び照明条件の設定方法
US7124395B2 (en) 2002-07-26 2006-10-17 Asml Masktools B.V. Automatic optical proximity correction (OPC) rule generation
JP4332331B2 (ja) * 2002-08-05 2009-09-16 キヤノン株式会社 露光方法
US7001693B2 (en) * 2003-02-28 2006-02-21 International Business Machines Corporation Binary OPC for assist feature layout optimization
US6964032B2 (en) * 2003-02-28 2005-11-08 International Business Machines Corporation Pitch-based subresolution assist feature design
US7355673B2 (en) * 2003-06-30 2008-04-08 Asml Masktools B.V. Method, program product and apparatus of simultaneous optimization for NA-Sigma exposure settings and scattering bars OPC using a device layout
US6905899B2 (en) 2003-09-23 2005-06-14 Macronix International Co., Ltd. Methods for forming a photoresist pattern using an anti-optical proximity effect
JP4709511B2 (ja) 2004-08-18 2011-06-22 株式会社東芝 マスクパターン補正方法、マスクパターン補正プログラム、フォトマスクの作製方法及び半導体装置の製造方法
US8037429B2 (en) * 2005-03-02 2011-10-11 Mentor Graphics Corporation Model-based SRAF insertion
JP4389222B2 (ja) * 2005-05-02 2009-12-24 エルピーダメモリ株式会社 マスクデータ作成方法
US7349066B2 (en) * 2005-05-05 2008-03-25 Asml Masktools B.V. Apparatus, method and computer program product for performing a model based optical proximity correction factoring neighbor influence
KR20080068006A (ko) * 2005-11-15 2008-07-22 가부시키가이샤 니콘 노광 장치와, 노광 방법 및 디바이스 제조 방법
JP4791198B2 (ja) 2006-02-03 2011-10-12 パナソニック株式会社 フォトマスク、そのフォトマスクを用いたパターン形成方法及びマスクデータ作成方法
JP5235322B2 (ja) * 2006-07-12 2013-07-10 キヤノン株式会社 原版データ作成方法及び原版データ作成プログラム
JP4804294B2 (ja) * 2006-09-20 2011-11-02 キヤノン株式会社 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
JP2008076683A (ja) * 2006-09-20 2008-04-03 Canon Inc 原版データ作成プログラム、原版データ作成方法、原版作成方法、露光方法及びデバイスの製造方法
JP4484909B2 (ja) * 2007-07-24 2010-06-16 キヤノン株式会社 原版データ作成方法、原版作成方法、露光方法および原版データ作成プログラム
KR100871750B1 (ko) 2007-08-10 2008-12-05 주식회사 동부하이텍 마스크 형성 방법
JP2009093138A (ja) * 2007-09-19 2009-04-30 Canon Inc 原版データの生成方法、原版作成方法、露光方法、デバイス製造方法及び原版データを作成するためのプログラム
EP2040120B1 (en) * 2007-09-19 2011-03-02 Canon Kabushiki Kaisha Mask data generation method, mask fabrication method, exposure method, device fabrication method, and program
JP4402145B2 (ja) 2007-10-03 2010-01-20 キヤノン株式会社 算出方法、生成方法、プログラム、露光方法及び原版作成方法
JP5300354B2 (ja) * 2008-07-11 2013-09-25 キヤノン株式会社 生成方法、原版作成方法、露光方法、デバイス製造方法及びプログラム
JP2010165856A (ja) * 2009-01-15 2010-07-29 Canon Inc 決定方法、露光方法、デバイスの製造方法及びプログラム
JP2011028098A (ja) * 2009-07-28 2011-02-10 Toshiba Corp パターン評価方法、パターン作成方法およびパターン評価プログラム
JP5665398B2 (ja) * 2009-08-10 2015-02-04 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP2011059513A (ja) * 2009-09-11 2011-03-24 Toshiba Corp パターン作成方法、マスクの製造方法および半導体デバイスの製造方法
JP5603685B2 (ja) * 2010-07-08 2014-10-08 キヤノン株式会社 生成方法、作成方法、露光方法、デバイスの製造方法及びプログラム
JP5513324B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム
JP5513325B2 (ja) * 2010-09-01 2014-06-04 キヤノン株式会社 決定方法、露光方法及びプログラム
JP6039910B2 (ja) * 2012-03-15 2016-12-07 キヤノン株式会社 生成方法、プログラム及び情報処理装置
JP5677356B2 (ja) * 2012-04-04 2015-02-25 キヤノン株式会社 マスクパターンの生成方法

Also Published As

Publication number Publication date
TWI444787B (zh) 2014-07-11
JP2012098397A (ja) 2012-05-24
US8949748B2 (en) 2015-02-03
KR101375376B1 (ko) 2014-03-17
KR20120069542A (ko) 2012-06-28
CN102592002A (zh) 2012-07-18
JP5627394B2 (ja) 2014-11-19
TW201224676A (en) 2012-06-16
US20120107730A1 (en) 2012-05-03

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