KR101375376B1 - 마스크 데이터 작성 프로그램을 기록한 기록 매체, 마스크 제조 방법, 및 노광 방법 - Google Patents

마스크 데이터 작성 프로그램을 기록한 기록 매체, 마스크 제조 방법, 및 노광 방법 Download PDF

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KR101375376B1
KR101375376B1 KR1020110111098A KR20110111098A KR101375376B1 KR 101375376 B1 KR101375376 B1 KR 101375376B1 KR 1020110111098 A KR1020110111098 A KR 1020110111098A KR 20110111098 A KR20110111098 A KR 20110111098A KR 101375376 B1 KR101375376 B1 KR 101375376B1
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pattern
parameter
value
main pattern
mask
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KR20120069542A (ko
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히로유끼 이시이
고오이찌로오 쯔지따
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캐논 가부시끼가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/36—Masks having proximity correction features; Preparation thereof, e.g. optical proximity correction [OPC] design processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70058—Mask illumination systems
    • G03F7/70125—Use of illumination settings tailored to particular mask patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70433—Layout for increasing efficiency or for compensating imaging errors, e.g. layout of exposure fields for reducing focus errors; Use of mask features for increasing efficiency or for compensating imaging errors
    • G03F7/70441—Optical proximity correction [OPC]
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G03F7/705—Modelling or simulating from physical phenomena up to complete wafer processes or whole workflow in wafer productions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274—Photolithographic processes

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
KR1020110111098A 2010-10-29 2011-10-28 마스크 데이터 작성 프로그램을 기록한 기록 매체, 마스크 제조 방법, 및 노광 방법 Active KR101375376B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2010-244368 2010-10-29
JP2010244368A JP5627394B2 (ja) 2010-10-29 2010-10-29 マスクのデータ及び露光条件を決定するためのプログラム、決定方法、マスク製造方法、露光方法及びデバイス製造方法

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KR20120069542A KR20120069542A (ko) 2012-06-28
KR101375376B1 true KR101375376B1 (ko) 2014-03-17

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US (1) US8949748B2 (enExample)
JP (1) JP5627394B2 (enExample)
KR (1) KR101375376B1 (enExample)
CN (1) CN102592002B (enExample)
TW (1) TWI444787B (enExample)

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JP6039910B2 (ja) 2012-03-15 2016-12-07 キヤノン株式会社 生成方法、プログラム及び情報処理装置
JP6108693B2 (ja) 2012-06-08 2017-04-05 キヤノン株式会社 パターン作成方法
JP6192372B2 (ja) * 2013-06-11 2017-09-06 キヤノン株式会社 マスクパターンの作成方法、プログラムおよび情報処理装置
CN103631096B (zh) * 2013-12-06 2015-05-20 北京理工大学 基于Abbe矢量成像模型的光源-掩模-偏振态联合优化方法
CN105607413B (zh) * 2016-03-18 2019-11-01 京东方科技集团股份有限公司 产生掩膜图案的系统和方法以及曝光系统
WO2017176314A1 (en) * 2016-04-04 2017-10-12 Kla-Tencor Corporation Process compatibility improvement by fill factor modulation
US10083833B1 (en) * 2017-06-21 2018-09-25 Arm Limited Integration fill technique
JPWO2019138940A1 (ja) * 2018-01-10 2020-12-24 凸版印刷株式会社 フォトマスク
CN113109990B (zh) * 2020-01-09 2022-08-26 中芯国际集成电路制造(北京)有限公司 掩膜版版图的修正方法
TWI796008B (zh) * 2021-11-22 2023-03-11 力晶積成電子製造股份有限公司 光罩以及半導體元件的製造方法

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JP2012098397A (ja) 2012-05-24
US20120107730A1 (en) 2012-05-03
CN102592002A (zh) 2012-07-18
CN102592002B (zh) 2015-06-03
TW201224676A (en) 2012-06-16
JP5627394B2 (ja) 2014-11-19
TWI444787B (zh) 2014-07-11
US8949748B2 (en) 2015-02-03
KR20120069542A (ko) 2012-06-28

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