CN102576236A - 具有多个电源和/或多个低功率模式的存储器 - Google Patents
具有多个电源和/或多个低功率模式的存储器 Download PDFInfo
- Publication number
- CN102576236A CN102576236A CN2010800468312A CN201080046831A CN102576236A CN 102576236 A CN102576236 A CN 102576236A CN 2010800468312 A CN2010800468312 A CN 2010800468312A CN 201080046831 A CN201080046831 A CN 201080046831A CN 102576236 A CN102576236 A CN 102576236A
- Authority
- CN
- China
- Prior art keywords
- voltage
- memory array
- power
- storer
- power rail
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
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Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Abstract
Description
Claims (26)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24094809P | 2009-09-09 | 2009-09-09 | |
US61/240,948 | 2009-09-09 | ||
US28806409P | 2009-12-18 | 2009-12-18 | |
US61/288,064 | 2009-12-18 | ||
PCT/US2010/048306 WO2011031888A1 (en) | 2009-09-09 | 2010-09-09 | Memory with multiple power supplies and/or multiple low power modes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102576236A true CN102576236A (zh) | 2012-07-11 |
CN102576236B CN102576236B (zh) | 2015-03-25 |
Family
ID=43647684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080046831.2A Active CN102576236B (zh) | 2009-09-09 | 2010-09-09 | 具有多个电源和/或多个低功率模式的存储器 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8605534B2 (zh) |
EP (1) | EP2476036A4 (zh) |
KR (1) | KR101737020B1 (zh) |
CN (1) | CN102576236B (zh) |
WO (1) | WO2011031888A1 (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN107045878A (zh) * | 2015-09-18 | 2017-08-15 | 台湾积体电路制造股份有限公司 | 双轨存储器、存储器宏以及相关的混合供电方法 |
CN107577849A (zh) * | 2017-08-10 | 2018-01-12 | 西安电子科技大学 | 基于快速电压降分析算法的电源分配网络设计方法 |
CN108476021A (zh) * | 2015-12-28 | 2018-08-31 | 高通股份有限公司 | 可调节电源轨复用 |
CN108735246A (zh) * | 2017-04-14 | 2018-11-02 | 半导体元件工业有限责任公司 | 集成电路及用于操作有多个存储器单元的集成电路的方法 |
CN109285579A (zh) * | 2017-07-20 | 2019-01-29 | 三星电子株式会社 | 包括电压区域的存储器器件及其操作方法 |
CN110120699A (zh) * | 2018-02-06 | 2019-08-13 | 意法半导体(鲁塞)公司 | 用于对集成电路电源预充电的方法和对应的集成电路 |
CN111316234A (zh) * | 2017-09-12 | 2020-06-19 | 恩倍科微公司 | 极低功率微控制器系统 |
CN111540399A (zh) * | 2019-02-01 | 2020-08-14 | 爱思开海力士有限公司 | 存储器系统及其操作方法 |
CN111835062A (zh) * | 2014-08-29 | 2020-10-27 | 柏思科技有限公司 | 用于移动路由器从多个电源接收电力的设备和方法 |
CN113196397A (zh) * | 2018-12-20 | 2021-07-30 | 美光科技公司 | 存储器装置低功率模式 |
Families Citing this family (25)
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US7226857B2 (en) | 2004-07-30 | 2007-06-05 | Micron Technology, Inc. | Front-end processing of nickel plated bond pads |
US8977878B2 (en) * | 2011-05-19 | 2015-03-10 | Texas Instruments Incorporated | Reducing current leakage in L1 program memory |
US9665144B2 (en) * | 2011-12-21 | 2017-05-30 | Intel Corporation | Methods and systems for energy efficiency and energy conservation including entry and exit latency reduction for low power states |
US8977890B2 (en) * | 2012-08-31 | 2015-03-10 | Kabushiki Kaisha Toshiba | Memory system and control method |
US8804449B2 (en) | 2012-09-06 | 2014-08-12 | Micron Technology, Inc. | Apparatus and methods to provide power management for memory devices |
CN103871458B (zh) | 2012-12-07 | 2018-05-01 | 三星电子株式会社 | 集成电路及其数据处理方法、解码器、存储器 |
KR102088808B1 (ko) * | 2013-04-19 | 2020-03-13 | 삼성전자주식회사 | 듀얼 파워 레일을 포함하는 시스템 온 칩 및 그것의 전압 공급 방법 |
US9483096B2 (en) * | 2013-12-06 | 2016-11-01 | Sandisk Technologies Llc | Host interface of a memory device supplied with regulated or non-regulated power based on operating mode of the memory device |
US20150169042A1 (en) * | 2013-12-16 | 2015-06-18 | Sandisk Technologies Inc. | Low power interface for a data storage device |
US10050448B2 (en) | 2015-04-15 | 2018-08-14 | Qualcomm Incorporated | Providing current cross-conduction protection in a power rail control system |
US9977480B2 (en) * | 2015-04-15 | 2018-05-22 | Qualcomm Incorporated | Selective coupling of power rails to a memory domain(s) in a processor-based system |
US10163470B2 (en) * | 2015-09-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Dual rail memory, memory macro and associated hybrid power supply method |
US10684671B2 (en) | 2016-05-27 | 2020-06-16 | Qualcomm Incorporated | Adaptively controlling drive strength of multiplexed power from supply power rails in a power multiplexing system to a powered circuit |
US10141045B2 (en) | 2016-12-15 | 2018-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual rail device with power detector for controlling power to first and second power domains |
DE102016125404A1 (de) * | 2016-12-15 | 2018-06-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Dual-rail-speicher, speichermakro und zugehöriges hybrides stromversorgungsverfahren |
US10304500B2 (en) * | 2017-06-29 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Power switch control for dual power supply |
US10657081B2 (en) * | 2017-08-25 | 2020-05-19 | Micron Technology, Inc. | Individually addressing memory devices disconnected from a data bus |
CN107886981B (zh) * | 2017-11-28 | 2021-04-27 | 晶晨半导体(上海)股份有限公司 | 一种应用于嵌入式系统的掉电处理方法 |
US11010326B2 (en) * | 2018-09-20 | 2021-05-18 | Western Digital Technologies, Inc. | Universal serial bus voltage reducing adaptor |
KR102620262B1 (ko) | 2019-06-04 | 2024-01-03 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 그 동작 방법 및 메모리 시스템 |
US11243596B2 (en) | 2019-08-26 | 2022-02-08 | Micron Technology, Inc. | Architecture-based power management for a memory device |
US11290092B1 (en) | 2020-09-29 | 2022-03-29 | Samsung Electronics Co., Ltd. | Level shifter circuits |
US20220406357A1 (en) * | 2021-06-18 | 2022-12-22 | Micron Technology, Inc. | Multi-Rail Power Transition |
FR3127053A1 (fr) * | 2021-09-14 | 2023-03-17 | Stmicroelectronics (Rousset) Sas | Systéme electronique comprenant une unité de contrôle configurée pour communiquer avec une mémoire |
US20230317150A1 (en) * | 2022-03-30 | 2023-10-05 | Qualcomm Incorporated | Memory with Bitcell Power Boosting |
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US5684997A (en) * | 1994-12-22 | 1997-11-04 | Texas Instruments Incorporated | Integrated circuit design for handling of system management interrupts (SMI) |
CN1480948A (zh) * | 2002-09-05 | 2004-03-10 | 三菱电机株式会社 | 可削减输入输出端子的半导体存储器 |
US20080307240A1 (en) * | 2007-06-08 | 2008-12-11 | Texas Instruments Incorporated | Power management electronic circuits, systems, and methods and processes of manufacture |
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US5197033A (en) * | 1986-07-18 | 1993-03-23 | Hitachi, Ltd. | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
JPH0973784A (ja) * | 1995-09-07 | 1997-03-18 | Nec Corp | 半導体装置及びその制御回路 |
KR100406548B1 (ko) * | 2001-12-31 | 2003-11-20 | 주식회사 하이닉스반도체 | 반도체메모리장치의 비트라인프리차지 회로 및 방법 |
US7061820B2 (en) * | 2003-08-27 | 2006-06-13 | Texas Instruments Incorporated | Voltage keeping scheme for low-leakage memory devices |
JP4651287B2 (ja) * | 2004-02-19 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
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FR2871281B1 (fr) * | 2004-04-01 | 2008-06-13 | Atmel Corp | Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee |
KR100604876B1 (ko) | 2004-07-02 | 2006-07-31 | 삼성전자주식회사 | 다양한 pvt 변화에 대해서도 안정적인 버츄얼 레일스킴을 적용한 sram 장치 |
KR100572622B1 (ko) * | 2004-12-22 | 2006-04-24 | 삼성전자주식회사 | 멀티 타임 프로그래머블 반도체 메모리 장치 및 멀티 타임프로그래머블 반도체 메모리 장치의 멀티 타임 프로그래밍방법 |
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-
2010
- 2010-09-09 CN CN201080046831.2A patent/CN102576236B/zh active Active
- 2010-09-09 US US12/878,703 patent/US8605534B2/en active Active
- 2010-09-09 KR KR1020127007571A patent/KR101737020B1/ko active IP Right Grant
- 2010-09-09 WO PCT/US2010/048306 patent/WO2011031888A1/en active Application Filing
- 2010-09-09 EP EP10816098.7A patent/EP2476036A4/en not_active Withdrawn
-
2013
- 2013-11-12 US US14/077,634 patent/US9218856B2/en active Active
-
2015
- 2015-12-02 US US14/957,029 patent/US9570118B2/en active Active
Patent Citations (3)
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US5684997A (en) * | 1994-12-22 | 1997-11-04 | Texas Instruments Incorporated | Integrated circuit design for handling of system management interrupts (SMI) |
CN1480948A (zh) * | 2002-09-05 | 2004-03-10 | 三菱电机株式会社 | 可削减输入输出端子的半导体存储器 |
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Cited By (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111835062B (zh) * | 2014-08-29 | 2023-12-15 | 柏思科技有限公司 | 用于移动路由器从多个电源接收电力的设备和方法 |
CN111835062A (zh) * | 2014-08-29 | 2020-10-27 | 柏思科技有限公司 | 用于移动路由器从多个电源接收电力的设备和方法 |
CN107045878B (zh) * | 2015-09-18 | 2019-08-30 | 台湾积体电路制造股份有限公司 | 双轨存储器、存储器宏以及相关的混合供电方法 |
CN107045878A (zh) * | 2015-09-18 | 2017-08-15 | 台湾积体电路制造股份有限公司 | 双轨存储器、存储器宏以及相关的混合供电方法 |
CN108476021A (zh) * | 2015-12-28 | 2018-08-31 | 高通股份有限公司 | 可调节电源轨复用 |
CN108735246A (zh) * | 2017-04-14 | 2018-11-02 | 半导体元件工业有限责任公司 | 集成电路及用于操作有多个存储器单元的集成电路的方法 |
CN108735246B (zh) * | 2017-04-14 | 2023-04-11 | 半导体元件工业有限责任公司 | 集成电路及用于操作有多个存储器单元的集成电路的方法 |
CN109285579A (zh) * | 2017-07-20 | 2019-01-29 | 三星电子株式会社 | 包括电压区域的存储器器件及其操作方法 |
CN109285579B (zh) * | 2017-07-20 | 2023-09-05 | 三星电子株式会社 | 包括电压区域的存储器器件及其操作方法 |
CN107577849B (zh) * | 2017-08-10 | 2019-07-02 | 西安电子科技大学 | 基于快速电压降分析算法的电源分配网络设计方法 |
CN107577849A (zh) * | 2017-08-10 | 2018-01-12 | 西安电子科技大学 | 基于快速电压降分析算法的电源分配网络设计方法 |
CN111316234A (zh) * | 2017-09-12 | 2020-06-19 | 恩倍科微公司 | 极低功率微控制器系统 |
CN111316234B (zh) * | 2017-09-12 | 2024-03-12 | 恩倍科微公司 | 极低功率微控制器系统 |
CN110120699A (zh) * | 2018-02-06 | 2019-08-13 | 意法半导体(鲁塞)公司 | 用于对集成电路电源预充电的方法和对应的集成电路 |
US11670956B2 (en) | 2018-02-06 | 2023-06-06 | Stmicroelectronics (Rousset) Sas | Method for precharging an integrated-circuit supply, and corresponding integrated circuit |
CN110120699B (zh) * | 2018-02-06 | 2023-08-08 | 意法半导体(鲁塞)公司 | 用于对集成电路电源预充电的方法和对应的集成电路 |
CN113196397A (zh) * | 2018-12-20 | 2021-07-30 | 美光科技公司 | 存储器装置低功率模式 |
CN111540399A (zh) * | 2019-02-01 | 2020-08-14 | 爱思开海力士有限公司 | 存储器系统及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2011031888A1 (en) | 2011-03-17 |
US9218856B2 (en) | 2015-12-22 |
US20160086638A1 (en) | 2016-03-24 |
US20110058439A1 (en) | 2011-03-10 |
US8605534B2 (en) | 2013-12-10 |
KR20120062824A (ko) | 2012-06-14 |
EP2476036A4 (en) | 2013-04-10 |
CN102576236B (zh) | 2015-03-25 |
US20140071782A1 (en) | 2014-03-13 |
KR101737020B1 (ko) | 2017-05-29 |
US9570118B2 (en) | 2017-02-14 |
EP2476036A1 (en) | 2012-07-18 |
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