CN102576236B - 具有多个电源和/或多个低功率模式的存储器 - Google Patents
具有多个电源和/或多个低功率模式的存储器 Download PDFInfo
- Publication number
- CN102576236B CN102576236B CN201080046831.2A CN201080046831A CN102576236B CN 102576236 B CN102576236 B CN 102576236B CN 201080046831 A CN201080046831 A CN 201080046831A CN 102576236 B CN102576236 B CN 102576236B
- Authority
- CN
- China
- Prior art keywords
- voltage
- memory array
- power
- memory
- power rail
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/12005—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details comprising voltage or current generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/02—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding parasitic signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
Abstract
Description
Claims (25)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US24094809P | 2009-09-09 | 2009-09-09 | |
US61/240,948 | 2009-09-09 | ||
US28806409P | 2009-12-18 | 2009-12-18 | |
US61/288,064 | 2009-12-18 | ||
PCT/US2010/048306 WO2011031888A1 (en) | 2009-09-09 | 2010-09-09 | Memory with multiple power supplies and/or multiple low power modes |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102576236A CN102576236A (zh) | 2012-07-11 |
CN102576236B true CN102576236B (zh) | 2015-03-25 |
Family
ID=43647684
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201080046831.2A Active CN102576236B (zh) | 2009-09-09 | 2010-09-09 | 具有多个电源和/或多个低功率模式的存储器 |
Country Status (5)
Country | Link |
---|---|
US (3) | US8605534B2 (zh) |
EP (1) | EP2476036A4 (zh) |
KR (1) | KR101737020B1 (zh) |
CN (1) | CN102576236B (zh) |
WO (1) | WO2011031888A1 (zh) |
Families Citing this family (35)
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US7226857B2 (en) | 2004-07-30 | 2007-06-05 | Micron Technology, Inc. | Front-end processing of nickel plated bond pads |
US8977878B2 (en) * | 2011-05-19 | 2015-03-10 | Texas Instruments Incorporated | Reducing current leakage in L1 program memory |
US9665144B2 (en) * | 2011-12-21 | 2017-05-30 | Intel Corporation | Methods and systems for energy efficiency and energy conservation including entry and exit latency reduction for low power states |
US8977890B2 (en) * | 2012-08-31 | 2015-03-10 | Kabushiki Kaisha Toshiba | Memory system and control method |
US8804449B2 (en) * | 2012-09-06 | 2014-08-12 | Micron Technology, Inc. | Apparatus and methods to provide power management for memory devices |
CN103871458B (zh) | 2012-12-07 | 2018-05-01 | 三星电子株式会社 | 集成电路及其数据处理方法、解码器、存储器 |
KR102088808B1 (ko) * | 2013-04-19 | 2020-03-13 | 삼성전자주식회사 | 듀얼 파워 레일을 포함하는 시스템 온 칩 및 그것의 전압 공급 방법 |
US9483096B2 (en) * | 2013-12-06 | 2016-11-01 | Sandisk Technologies Llc | Host interface of a memory device supplied with regulated or non-regulated power based on operating mode of the memory device |
US20150169042A1 (en) * | 2013-12-16 | 2015-06-18 | Sandisk Technologies Inc. | Low power interface for a data storage device |
CN106575874B (zh) * | 2014-08-29 | 2020-08-04 | 柏思科技有限公司 | 用于移动路由器从多个电源接收电力的设备和方法 |
US10050448B2 (en) | 2015-04-15 | 2018-08-14 | Qualcomm Incorporated | Providing current cross-conduction protection in a power rail control system |
US9977480B2 (en) * | 2015-04-15 | 2018-05-22 | Qualcomm Incorporated | Selective coupling of power rails to a memory domain(s) in a processor-based system |
US9666253B2 (en) | 2015-09-18 | 2017-05-30 | Taiwan Semiconductor Manufacturing Company Ltd. | Dual rail memory, memory macro and associated hybrid power supply method |
US10163470B2 (en) | 2015-09-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Dual rail memory, memory macro and associated hybrid power supply method |
US9852859B2 (en) * | 2015-12-28 | 2017-12-26 | Qualcomm Incorporated | Adjustable power rail multiplexing |
US10684671B2 (en) | 2016-05-27 | 2020-06-16 | Qualcomm Incorporated | Adaptively controlling drive strength of multiplexed power from supply power rails in a power multiplexing system to a powered circuit |
US10141045B2 (en) * | 2016-12-15 | 2018-11-27 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dual rail device with power detector for controlling power to first and second power domains |
DE102016125404A1 (de) * | 2016-12-15 | 2018-06-21 | Taiwan Semiconductor Manufacturing Co. Ltd. | Dual-rail-speicher, speichermakro und zugehöriges hybrides stromversorgungsverfahren |
US10545563B2 (en) * | 2017-04-14 | 2020-01-28 | Semiconductor Components Industries, Llc | Methods and apparatus for power management of a memory cell |
US10304500B2 (en) * | 2017-06-29 | 2019-05-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Power switch control for dual power supply |
US10607660B2 (en) * | 2017-07-20 | 2020-03-31 | Samsung Electronics Co., Ltd. | Nonvolatile memory device and operating method of the same |
CN107577849B (zh) * | 2017-08-10 | 2019-07-02 | 西安电子科技大学 | 基于快速电压降分析算法的电源分配网络设计方法 |
US10657081B2 (en) * | 2017-08-25 | 2020-05-19 | Micron Technology, Inc. | Individually addressing memory devices disconnected from a data bus |
US10754414B2 (en) * | 2017-09-12 | 2020-08-25 | Ambiq Micro, Inc. | Very low power microcontroller system |
CN107886981B (zh) * | 2017-11-28 | 2021-04-27 | 晶晨半导体(上海)股份有限公司 | 一种应用于嵌入式系统的掉电处理方法 |
FR3077677B1 (fr) * | 2018-02-06 | 2020-03-06 | Stmicroelectronics (Rousset) Sas | Procede de precharge d'une alimentation de circuit integre, et circuit integre correspondant |
US11010326B2 (en) | 2018-09-20 | 2021-05-18 | Western Digital Technologies, Inc. | Universal serial bus voltage reducing adaptor |
US11561603B2 (en) * | 2018-12-20 | 2023-01-24 | Micron Technology, Inc. | Memory device low power mode |
KR20200095903A (ko) * | 2019-02-01 | 2020-08-11 | 에스케이하이닉스 주식회사 | 메모리 시스템 및 그것의 동작방법 |
KR102620262B1 (ko) | 2019-06-04 | 2024-01-03 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치, 그 동작 방법 및 메모리 시스템 |
US11243596B2 (en) | 2019-08-26 | 2022-02-08 | Micron Technology, Inc. | Architecture-based power management for a memory device |
US11290092B1 (en) | 2020-09-29 | 2022-03-29 | Samsung Electronics Co., Ltd. | Level shifter circuits |
US20220406357A1 (en) * | 2021-06-18 | 2022-12-22 | Micron Technology, Inc. | Multi-Rail Power Transition |
FR3127053A1 (fr) * | 2021-09-14 | 2023-03-17 | Stmicroelectronics (Rousset) Sas | Systéme electronique comprenant une unité de contrôle configurée pour communiquer avec une mémoire |
US20230317150A1 (en) * | 2022-03-30 | 2023-10-05 | Qualcomm Incorporated | Memory with Bitcell Power Boosting |
Citations (2)
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US5684997A (en) * | 1994-12-22 | 1997-11-04 | Texas Instruments Incorporated | Integrated circuit design for handling of system management interrupts (SMI) |
CN1480948A (zh) * | 2002-09-05 | 2004-03-10 | 三菱电机株式会社 | 可削减输入输出端子的半导体存储器 |
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US5197033A (en) * | 1986-07-18 | 1993-03-23 | Hitachi, Ltd. | Semiconductor device incorporating internal power supply for compensating for deviation in operating condition and fabrication process conditions |
JPH0973784A (ja) * | 1995-09-07 | 1997-03-18 | Nec Corp | 半導体装置及びその制御回路 |
KR100406548B1 (ko) * | 2001-12-31 | 2003-11-20 | 주식회사 하이닉스반도체 | 반도체메모리장치의 비트라인프리차지 회로 및 방법 |
US7061820B2 (en) * | 2003-08-27 | 2006-06-13 | Texas Instruments Incorporated | Voltage keeping scheme for low-leakage memory devices |
JP4651287B2 (ja) * | 2004-02-19 | 2011-03-16 | ルネサスエレクトロニクス株式会社 | 半導体集積回路 |
US7123522B2 (en) * | 2004-03-10 | 2006-10-17 | Micron Technology, Inc. | Method and apparatus for achieving low power consumption during power down |
FR2871281B1 (fr) * | 2004-04-01 | 2008-06-13 | Atmel Corp | Procede et dispositif d'alimentation de puissance duale pour une memoire non-volatile embarquee |
KR100604876B1 (ko) | 2004-07-02 | 2006-07-31 | 삼성전자주식회사 | 다양한 pvt 변화에 대해서도 안정적인 버츄얼 레일스킴을 적용한 sram 장치 |
KR100572622B1 (ko) * | 2004-12-22 | 2006-04-24 | 삼성전자주식회사 | 멀티 타임 프로그래머블 반도체 메모리 장치 및 멀티 타임프로그래머블 반도체 메모리 장치의 멀티 타임 프로그래밍방법 |
US7956669B2 (en) * | 2005-04-15 | 2011-06-07 | International Business Machines Corporation | High-density low-power data retention power gating with double-gate devices |
US7307899B2 (en) | 2005-05-23 | 2007-12-11 | Intel Corporation | Reducing power consumption in integrated circuits |
JP4660280B2 (ja) * | 2005-05-25 | 2011-03-30 | 株式会社東芝 | 半導体記憶装置 |
US7728621B2 (en) * | 2005-08-16 | 2010-06-01 | Novelics, Llc | Block-by-block leakage control and interface |
WO2007043095A1 (ja) * | 2005-09-30 | 2007-04-19 | Spansion Llc | 記憶装置、および記憶装置の制御方法 |
JP2007122814A (ja) * | 2005-10-28 | 2007-05-17 | Oki Electric Ind Co Ltd | 半導体集積回路及びリーク電流低減方法 |
US20070143417A1 (en) * | 2005-12-15 | 2007-06-21 | Daigle Brian K | Instant messaging confirmation and receipt |
US7463545B2 (en) * | 2006-03-17 | 2008-12-09 | Texas Instruments Incorporated | System and method for reducing latency in a memory array decoder circuit |
US8327158B2 (en) * | 2006-11-01 | 2012-12-04 | Texas Instruments Incorporated | Hardware voting mechanism for arbitrating scaling of shared voltage domain, integrated circuits, processes and systems |
JP5057757B2 (ja) * | 2006-11-30 | 2012-10-24 | 株式会社東芝 | 半導体集積回路 |
US7652504B2 (en) * | 2006-12-13 | 2010-01-26 | Apple Inc. | Low latency, power-down safe level shifter |
US20080307240A1 (en) * | 2007-06-08 | 2008-12-11 | Texas Instruments Incorporated | Power management electronic circuits, systems, and methods and processes of manufacture |
US8345490B2 (en) * | 2010-06-23 | 2013-01-01 | International Business Machines Corporation | Split voltage level restore and evaluate clock signals for memory address decoding |
-
2010
- 2010-09-09 CN CN201080046831.2A patent/CN102576236B/zh active Active
- 2010-09-09 US US12/878,703 patent/US8605534B2/en active Active
- 2010-09-09 WO PCT/US2010/048306 patent/WO2011031888A1/en active Application Filing
- 2010-09-09 KR KR1020127007571A patent/KR101737020B1/ko active IP Right Grant
- 2010-09-09 EP EP10816098.7A patent/EP2476036A4/en not_active Withdrawn
-
2013
- 2013-11-12 US US14/077,634 patent/US9218856B2/en active Active
-
2015
- 2015-12-02 US US14/957,029 patent/US9570118B2/en active Active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5684997A (en) * | 1994-12-22 | 1997-11-04 | Texas Instruments Incorporated | Integrated circuit design for handling of system management interrupts (SMI) |
CN1480948A (zh) * | 2002-09-05 | 2004-03-10 | 三菱电机株式会社 | 可削减输入输出端子的半导体存储器 |
Also Published As
Publication number | Publication date |
---|---|
US9218856B2 (en) | 2015-12-22 |
EP2476036A1 (en) | 2012-07-18 |
US8605534B2 (en) | 2013-12-10 |
US20110058439A1 (en) | 2011-03-10 |
KR20120062824A (ko) | 2012-06-14 |
KR101737020B1 (ko) | 2017-05-29 |
CN102576236A (zh) | 2012-07-11 |
US20140071782A1 (en) | 2014-03-13 |
WO2011031888A1 (en) | 2011-03-17 |
EP2476036A4 (en) | 2013-04-10 |
US9570118B2 (en) | 2017-02-14 |
US20160086638A1 (en) | 2016-03-24 |
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Legal Events
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C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
C14 | Grant of patent or utility model | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right |
Effective date of registration: 20200506 Address after: Singapore City Patentee after: Marvell Asia Pte. Ltd. Address before: Ford street, Grand Cayman, Cayman Islands Patentee before: Kaiwei international Co. Effective date of registration: 20200506 Address after: Ford street, Grand Cayman, Cayman Islands Patentee after: Kaiwei international Co. Address before: Hamilton, Bermuda Patentee before: Marvell International Ltd. Effective date of registration: 20200506 Address after: Hamilton, Bermuda Patentee after: Marvell International Ltd. Address before: Babado J San Mega Le Patentee before: MARVELL WORLD TRADE Ltd. |
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