CN102570293A - High thermal load large power semiconductor laser - Google Patents
High thermal load large power semiconductor laser Download PDFInfo
- Publication number
- CN102570293A CN102570293A CN2012100310009A CN201210031000A CN102570293A CN 102570293 A CN102570293 A CN 102570293A CN 2012100310009 A CN2012100310009 A CN 2012100310009A CN 201210031000 A CN201210031000 A CN 201210031000A CN 102570293 A CN102570293 A CN 102570293A
- Authority
- CN
- China
- Prior art keywords
- semiconductor laser
- laser chip
- circuit board
- chip assembly
- heat sink
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The invention relates to a high thermal load large power semiconductor laser which comprises a housing, a TEC refrigerator, a heat sink, a semiconductor laser chip assembly, and a circuit board. The semiconductor laser chip assembly is a chip assembly based on COS packaging and comprises a heat radiation substrate and a laser chip which is pasted on the heat radiation substrate. The heat radiation substrate is pasted on the heat sink. The circuit board is a circuit board whose metal surface is coated with ceramic, and the circuit board and the semiconductor laser chip assembly are electrically connected through a connecting copper sheet. The semiconductor laser has a good heat radiation effect, and manufacture of a large power laser can be realized. Simultaneously, the semiconductor laser chip is fixed with the heat sink by employing a pasting mode without deformation or displacement, influence on a product brought by change of machinery, temperature and the like can be overcome, and the reliability of the product is ensured.
Description
Technical field
The present invention relates to a kind of Laser Devices, it can use as light source in systems such as optical communication, light processing, light demonstration.
Background technology
Semiconductor laser develops rapidly because of the appearance of the expansion of its wavelength, high power laser light array and compatible laser leaded light and the micro-processor controlled appearance of laser energy parameter.The semiconductor laser volume is little, in light weight, cost is low, wavelength can be selected, and the field that its range of application spreads all over is more and more broader.
Existing high heat load semiconductor laser usually mainly by shell, be arranged on refrigerator in the shell, semiconductor laser chip assembly heat sink and that be fixed on heat sink is formed.Wherein, the semiconductor laser chip assembly generally adopts the C-mount packaged type, and is as shown in Figure 5.It comprises heat-conducting substrate 10, is fixed on the laser chip 20 on the heat-conducting substrate 10, the lead-in wire 40 that is opened in the screw 30 on the heat-conducting substrate 10 and connects laser chip 20 and power supply.This laser chip assembly, and is connected realization through lead-in wire 40 and leads to light on the metal heat sink (not shown) through screw with power supply.
This C-mount packaged type, because structural limitations, heat-conducting substrate 10 effective areas are little, and are simultaneously limited with the heat sink area that contacts, and cause luminous power less than normal, generally can only be below 8W.And; Because the semiconductor laser chip assembly only can be through screw on heat sink; Poor stability, in use, the position of laser chip assembly changes easily; This is easy to cause coupling efficiency to descend in the fiber coupling system of micron dimension, thereby causes the reliability of semiconductor laser lower.
Summary of the invention
The present invention seeks to the semiconductor laser that power output is higher and power consumption is less, reliability is higher for the deficiency that overcomes prior art.
For achieving the above object, the technical scheme that the present invention adopts is: a kind of high heat load high power semiconductor lasers, and it comprises:
Housing is installed with a plurality of pins on the described housing sidewall;
The TEC refrigerator, it is fixed in the said shell;
Heat sink, it is fixed on the described TEC refrigerator;
The semiconductor laser chip assembly, its stick on described heat sink on, be used to produce LASER Light Source;
Circuit board, it is connected between described semiconductor laser chip assembly and the pin, is used to realize the electric light conversion;
Described semiconductor laser chip assembly is the chip assembly based on COS encapsulation, and it comprises heat-radiating substrate and stick on the laser chip on the heat-radiating substrate, described heat-radiating substrate stick on described heat sink on; Described circuit board is a surface metal coated ceramic circuit board, and is electrically connected through being connected copper sheet between described circuit board and the described semiconductor laser chip assembly.
Further, described heat sink being " L " type, described semiconductor laser chip assembly sticks on the medial surface of said heat sink vertical direction, described circuit board is fixed on the inner surface of said heat sink horizontal direction.
Described heat sink on and be positioned at described semiconductor laser chip assembly both sides and be pasted with lead terminal; Described connection copper sheet two ends contact with lead terminal with described circuit board respectively and are connected; Thereby further guaranteed the reliability that connects, the position of laser chip assembly can not be moved.
The thermistor that is used to monitor the enclosure interior temperature is installed on the described circuit board.
The photodetector that is used to monitor described semiconductor laser chip assembly Output optical power also is installed on the described circuit board.Preferably, described photodetector is the photodiode MPD with monitoring function.
Described housing comprises shell block and cap, and offers the optical transmission window of plating anti-reflection film on the described cap, is window output.
Because technique scheme utilization; The present invention compared with prior art has advantage: because the semiconductor laser chip assembly encapsulates based on COS; Its substrate area is bigger, and contacts fully with heat sink, makes radiating effect better; The entire semiconductor device can bear the output than high power laser, can realize the manufacturing of high power laser.Simultaneously, semiconductor laser chip adopts the mode and heat sink being fixed together of pasting, and can not be out of shape or displacement, can overcome the influence to product that variations such as machinery and temperature bring, and has guaranteed reliability of products.And, further guaranteed the lead connection stability through adopting copper sheet that chip assembly is linked to each other with the metallized ceramic circuit board.
Description of drawings
Accompanying drawing 1 is high heat load high power semiconductor lasers overview of the present invention;
Accompanying drawing 2 is the semiconductor chip assembly based on the COS encapsulation;
Accompanying drawing 4 removes the internal structure sketch map behind the cap for semiconductor laser in the accompanying drawing 1;
Wherein: 1, housing; 11, pin; 12, shell block; 13, cap; 131, optical transmission window;
2, TEC refrigerator; 3, heat sink; 4, semiconductor laser chip assembly; 41, heat-radiating substrate; 42, laser chip; 43, lead terminal; 5, circuit board; 6, connect copper sheet; 7, thermistor; 8, photodetector;
Embodiment
To combine accompanying drawing that the preferred embodiment of the invention is elaborated below:
Like Fig. 1, Fig. 3 and semiconductor laser shown in Figure 4; It comprises housing 1, be arranged on TEC refrigerator 2 in the housing 1, be fixed on the TEC refrigerator 2 heat sink 3, stick on semiconductor laser chip assembly 4 on heat sink 3, be used to realize the drive circuit board 5 of electric light conversion, will describe each part specific structural features below:
Housing 1 mainly by shell block 12 with shell block 12 top edges mutually the cap 13 that is provided with of driving fit form.In the present embodiment, housing 1 integral body is cuboid, and the bottom of shell block 12 is extended with and connects the wing 121, connects on the wing 121 to offer connecting hole 122, and semiconductor laser is connected with equipment (not shown) to be installed through this connecting hole 122.One sidepiece of shell block 12 is equipped with a plurality of pin ones 1, and described pin one 1 is connected with circuit board 5 corresponding ports through lead-in wire.Offer optical transmission window 131 on the cap 13, and be coated with on the optical transmission window 131 the anti-reflection blooming of output optical maser wavelength.The position of this optical transmission window 131 is corresponding with laser chip 42 light-emitting areas on the semiconductor laser chip assembly 4.
In the present embodiment, semiconductor laser chip assembly 4 is for adopting the chip assembly of COS packaged type, and is as shown in Figure 2.So-called COS is Chip on Submount, and it mainly is made up of heat-radiating substrate 41, laser chip 42, and the area of heat-radiating substrate 41 is much larger than laser chip 42, and it is processed by the A1N material usually.Laser chip 42 is fitted above that, and gold thread forms the positive-negative power leading-in end on the bonding.Semiconductor laser chip assembly 4 is fixedly connected through the vertical medial surface of heat conduction elargol or scolding tin processing and heat sink 3; Because heat-radiating substrate 41 has bigger area of dissipation; Be connected and rapidly the heat release that produces on the laser chip gone out with heat sink 3; So can effectively protect the useful life of chip, can improve laser output power simultaneously.
In the present embodiment; Circuit board 5 adopts the metallized ceramic material to process; Be that circuit is molded directly within on the metallized ceramic material; In order to ensure the reliable connection of circuit, on heat sink 3 and be positioned at heat-radiating substrate 41 both sides and be respectively arranged with lead terminal 43, what be set with surface gold-plating on the circuit board 5 between corresponding output end mouth and this lead terminal 43 is connected copper sheet 6.
In the present embodiment, on metallized ceramic circuit board 5, also be respectively arranged with thermistor 7 and photodetector 8, described thermistor 7 is used to monitor housing 1 internal temperature, with temperature information in the timely feedback housing 1, helps outside adjustment.Photodetector 8 is used to monitor the laser chip Output optical power, and in the present embodiment, photodetector 8 is selected the photodiode MPD (MonitorPhoto-Diode) that has monitoring function for use.
The above-mentioned high heat load high power laser that provides is window output, and the laser light emission direction carries the TEC refrigeration vertically upward, and there is the thermistor monitoring temperature inside, and MPD detector monitors Output optical power.It has the following advantages:
1. the semiconductor laser chip assembly is based on the product of COS chip assembly, and COS substrate area of dissipation is big, can bear more powerful laser output, can accomplish 12W or bigger luminous power output.The heat loss of TEC also has bigger decline under the equal-wattage situation, empirical tests, and the power level of output improves 20-50% than traditional structure, under the identical power conditions, the TEC heat load power ratio traditional structure 20-30% that approximately descends.
2. adopt bonding firm heat conduction elargol or scolding tin to stick on, can not be out of shape or displacement, can overcome the influence that the variation of machinery and temperature etc. brings, guaranteed reliability of products product with heat sink.
3. circuit board adopts the metallized ceramic circuit board, through gold-plated copper sheet chip and pin is linked together, and has overcome the bad problem of lead connection stability, and the internal structure layout is more reasonable simultaneously, and technology is standard more.
The foregoing description only is explanation technical conceive of the present invention and characteristics; Its purpose is to let the personage who is familiar with this technology can understand content of the present invention and enforcement according to this; Can not limit protection scope of the present invention with this; All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed within protection scope of the present invention.
Claims (8)
1. high heat load high power semiconductor lasers, it comprises:
Housing (1) is installed with a plurality of pins (11) on described housing (1) sidewall;
TEC refrigerator (2), it freezes in said shell (1);
Heat sink (3), it is fixed on the described TEC refrigerator (2);
Semiconductor laser chip assembly (4), it is arranged on described heat sink (3), is used to produce LASER Light Source;
Circuit board (5), it is connected between described semiconductor laser chip assembly (4) and the pin (12), is used to realize the electric light conversion;
It is characterized in that:
Described semiconductor laser chip assembly (4) is that it comprises heat-radiating substrate (41) and stick on the laser chip (42) on the heat-radiating substrate (41) that described heat-radiating substrate (41) sticks on described heat sink (3) based on the chip assembly of COS encapsulation; Described circuit board (5) is a surface metal coated ceramic circuit board, and is electrically connected through being connected copper sheet (6) between described circuit board (5) and the described semiconductor laser chip assembly (4).
2. high heat load high power semiconductor lasers according to claim 1; It is characterized in that: described heat sink (3) are " L " type; Described semiconductor laser chip assembly (4) sticks on the medial surface of said heat sink (3) vertical direction, and described circuit board (5) is fixed on the inner surface of horizontal direction of said heat sink (3).
3. high heat load high power semiconductor lasers according to claim 1 and 2; It is characterized in that: go up and be positioned at described semiconductor laser chip assembly (4) both sides in described heat sink (3) and be pasted with lead terminal (43), described connection copper sheet (6) two ends contact with lead terminal (43) with described circuit board (5) respectively and are connected.
4. high heat load high power semiconductor lasers according to claim 1 is characterized in that: the thermistor (7) that is used to monitor housing (1) internal temperature is installed on the described circuit board (5).
5. according to claim 1 or 4 described high heat load high power semiconductor lasers, it is characterized in that: the photodetector (8) that is used to monitor described semiconductor laser chip assembly (4) Output optical power also is installed on the described circuit board (5).
6. high heat load high power semiconductor lasers according to claim 5 is characterized in that: described photodetector (8) is for having the photodiode MPD of monitoring function.
7. high heat load high power semiconductor lasers according to claim 1 and 2; It is characterized in that: described housing (1) comprises shell block (12) and cap (13); And offer optical transmission window (131) on the described cap (13), and be coated with on the optical transmission window (131) the anti-reflection blooming of output optical maser wavelength.
8. high heat load high power semiconductor lasers according to claim 1 is characterized in that: described semiconductor laser chip assembly (4) is pasted with described heat sink (3) through heat conduction elargol or scolding tin mutually.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100310009A CN102570293A (en) | 2012-02-13 | 2012-02-13 | High thermal load large power semiconductor laser |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2012100310009A CN102570293A (en) | 2012-02-13 | 2012-02-13 | High thermal load large power semiconductor laser |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102570293A true CN102570293A (en) | 2012-07-11 |
Family
ID=46415048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2012100310009A Pending CN102570293A (en) | 2012-02-13 | 2012-02-13 | High thermal load large power semiconductor laser |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102570293A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801105A (en) * | 2012-08-09 | 2012-11-28 | 无锡沃浦光电传感科技有限公司 | Package of quantum cascade laser with thermoelectric refrigerator |
| CN103474865A (en) * | 2013-09-27 | 2013-12-25 | 北京无线电计量测试研究所 | Device used for cooling sheet-shaped laser gain media |
| CN104201560A (en) * | 2014-09-15 | 2014-12-10 | 上海理工大学 | Semiconductor chip and laser module and radiating method thereof |
| CN104966713A (en) * | 2015-06-12 | 2015-10-07 | 电子科技大学 | Novel packaging structure for IGBT module |
| CN105428460A (en) * | 2015-12-17 | 2016-03-23 | 湖北捷讯光电有限公司 | Electric packaging method for photoelectric device |
| CN107741618A (en) * | 2017-10-31 | 2018-02-27 | 武汉电信器件有限公司 | A kind of high speed DML emitting modules |
| CN109672476A (en) * | 2019-02-14 | 2019-04-23 | 亨通洛克利科技有限公司 | A kind of optical module device |
| CN109727948A (en) * | 2018-12-24 | 2019-05-07 | 西安飞芯电子科技有限公司 | A kind of encapsulating structure and chip mount unit |
| CN110635350A (en) * | 2019-08-02 | 2019-12-31 | 国科光芯(海宁)科技股份有限公司 | Voltage-withstanding preparation method of pluggable semiconductor laser |
| CN110764203A (en) * | 2019-12-10 | 2020-02-07 | 武汉优信技术股份有限公司 | Laser fixing and packaging structure for optical device and manufacturing method thereof |
| CN112928595A (en) * | 2021-04-26 | 2021-06-08 | 武汉敏芯半导体股份有限公司 | TO packaging-based laser with refrigeration and packaging method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6072815A (en) * | 1998-02-27 | 2000-06-06 | Litton Systems, Inc. | Microlaser submount assembly and associates packaging method |
| CN1812213A (en) * | 2006-02-24 | 2006-08-02 | 清华大学 | Passive radiating small heat sink semiconductor laser bar |
| CN202759153U (en) * | 2012-02-13 | 2013-02-27 | 苏州华必大激光有限公司 | High-thermal-load large-power semiconductor laser |
-
2012
- 2012-02-13 CN CN2012100310009A patent/CN102570293A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6072815A (en) * | 1998-02-27 | 2000-06-06 | Litton Systems, Inc. | Microlaser submount assembly and associates packaging method |
| CN1812213A (en) * | 2006-02-24 | 2006-08-02 | 清华大学 | Passive radiating small heat sink semiconductor laser bar |
| CN202759153U (en) * | 2012-02-13 | 2013-02-27 | 苏州华必大激光有限公司 | High-thermal-load large-power semiconductor laser |
Non-Patent Citations (2)
| Title |
|---|
| MARKO LABUDOVIC ET AL.: "Modeling of TE cooling of pump lasers", 《IEEE TRANSACTIONS ON COMPONENTS AND PACKAGING TECHNOLOGIES》 * |
| SETSUKO MURATA ET AL.: "Newly packaged 50-um-spaced 8-element laser diode array with a thermoelecric cooler", 《JPN. J. APPL. PHYS.》 * |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801105A (en) * | 2012-08-09 | 2012-11-28 | 无锡沃浦光电传感科技有限公司 | Package of quantum cascade laser with thermoelectric refrigerator |
| CN103474865A (en) * | 2013-09-27 | 2013-12-25 | 北京无线电计量测试研究所 | Device used for cooling sheet-shaped laser gain media |
| CN104201560A (en) * | 2014-09-15 | 2014-12-10 | 上海理工大学 | Semiconductor chip and laser module and radiating method thereof |
| CN104201560B (en) * | 2014-09-15 | 2017-11-17 | 上海理工大学 | Semiconductor chip laser module and its heat dissipating method |
| CN104966713A (en) * | 2015-06-12 | 2015-10-07 | 电子科技大学 | Novel packaging structure for IGBT module |
| CN105428460A (en) * | 2015-12-17 | 2016-03-23 | 湖北捷讯光电有限公司 | Electric packaging method for photoelectric device |
| CN107741618A (en) * | 2017-10-31 | 2018-02-27 | 武汉电信器件有限公司 | A kind of high speed DML emitting modules |
| CN107741618B (en) * | 2017-10-31 | 2019-02-12 | 武汉电信器件有限公司 | A kind of high speed DML emitting module |
| WO2019085232A1 (en) * | 2017-10-31 | 2019-05-09 | 武汉电信器件有限公司 | High-speed dml emitter assembly |
| CN109727948A (en) * | 2018-12-24 | 2019-05-07 | 西安飞芯电子科技有限公司 | A kind of encapsulating structure and chip mount unit |
| CN109672476A (en) * | 2019-02-14 | 2019-04-23 | 亨通洛克利科技有限公司 | A kind of optical module device |
| CN110635350A (en) * | 2019-08-02 | 2019-12-31 | 国科光芯(海宁)科技股份有限公司 | Voltage-withstanding preparation method of pluggable semiconductor laser |
| CN110764203A (en) * | 2019-12-10 | 2020-02-07 | 武汉优信技术股份有限公司 | Laser fixing and packaging structure for optical device and manufacturing method thereof |
| CN112928595A (en) * | 2021-04-26 | 2021-06-08 | 武汉敏芯半导体股份有限公司 | TO packaging-based laser with refrigeration and packaging method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102570293A (en) | High thermal load large power semiconductor laser | |
| CN202759153U (en) | High-thermal-load large-power semiconductor laser | |
| CN203415815U (en) | Coaxial packaged refrigeration type laser tube core | |
| EP2876355B1 (en) | LED base module and LED lighting device | |
| CN103500787A (en) | Ceramic COB (Chip-on-Board) packaged LED (light-emitting diode) light source with bottom capable of being directly soldered on heat sink | |
| KR100902357B1 (en) | Led package and the method for producing the same | |
| CN104576885A (en) | Flip LED package member | |
| CN101350390B (en) | LED encapsulation structure | |
| CN201187741Y (en) | Array type LED encapsulation structure | |
| CN204118067U (en) | Directly be packaged in the LED chip encapsulation architecture of radiator | |
| CN101958387A (en) | Novel LED light resource module packaging structure | |
| CN201589092U (en) | LED light source module for generating rectangular light spot | |
| CN105098031A (en) | Chip-on-board (COB) light source of flip chip mining lamp | |
| CN104747934A (en) | LED lighting device providing directed beams | |
| US8270444B2 (en) | Side emitting semiconductor package | |
| CN105299500A (en) | Light emitting diode (LED) lighting device used for providing directional light beam | |
| CN102832330B (en) | Wafer level LED packaging structure | |
| CN204240090U (en) | For providing the LED light device of directional beam | |
| CN109991703A (en) | A kind of optical module | |
| CN211151047U (en) | High-power semiconductor laser convenient for spot shaping | |
| CN105098043A (en) | Light-emitting device composite substrate and light emitting diode (LED) module with same | |
| CN101556034B (en) | Light source device | |
| CN103633235A (en) | LED module and manufacturing process thereof | |
| CN105406352A (en) | Device and method for reducing power consumption of light emitting assembly with refrigeration function | |
| CN202678401U (en) | Packaging structure for high-power LED |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| DD01 | Delivery of document by public notice |
Addressee: Starway Laser Inc. Document name: Notification of an Office Action |
|
| DD01 | Delivery of document by public notice |
Addressee: Starway Laser Inc. Document name: Notification that Application Deemed to be Withdrawn |
|
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20120711 |