CN211151047U - High-power semiconductor laser convenient for spot shaping - Google Patents
High-power semiconductor laser convenient for spot shaping Download PDFInfo
- Publication number
- CN211151047U CN211151047U CN201922294886.6U CN201922294886U CN211151047U CN 211151047 U CN211151047 U CN 211151047U CN 201922294886 U CN201922294886 U CN 201922294886U CN 211151047 U CN211151047 U CN 211151047U
- Authority
- CN
- China
- Prior art keywords
- heat sink
- semiconductor laser
- power semiconductor
- laser
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Landscapes
- Semiconductor Lasers (AREA)
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Abstract
The utility model discloses a high power semiconductor laser convenient to facula plastic, including laser chip, basement heat sink, transition heat sink and electrode, the welding of laser chip sets up on the transition heat sink, and the transition heat sink sets up in the middle part above the basement heat sink, and the basement heat layer is located the both sides position of transition heat sink and is seted up the overflow tank, and the laser chip draws forth the electrode through the gold thread; the semiconductor laser solves the safety problem and other power-on installation problems of heat sink conduction of semiconductor lasers with chip packaging and other C-mount packaging structures, so that the formed semiconductor laser packaging structure is simple, good in heat dissipation and long in service life, and high-quality light spot output is realized.
Description
Technical Field
The utility model relates to a semiconductor laser technical field especially relates to a high power semiconductor laser convenient to facula plastic.
Background
Semiconductor lasers, also known as laser diodes, are lasers that use semiconductor materials as the working substance. The laser has the advantages of small volume, long service life, high electro-optic conversion efficiency, good stability and the like, is widely applied to the aspects of laser communication, laser illumination, laser gyros, laser marking, scientific research, distance measurement, radar and the like, and has the characteristics of high output power, high reliability and long service life when being applied to semiconductor lasers.
The problems faced by the current semiconductor laser are that the packaging mode of a laser chip, the stability of output power is poor, the heat dissipation is poor, the conversion efficiency is not high, and the like, and the problems of inconvenient installation and power-up and the safety problem of the conduction between a power-up electrode of the laser chip and a heat sink of a substrate exist, which restrict the development space of the semiconductor laser, and the existing packaging structure needs to be improved.
SUMMERY OF THE UTILITY MODEL
The not enough of prior art more than, the utility model provides a make laser chip heat-sinking capability, laser instrument luminous efficacy, laser instrument output power stability, add electric flexibility and laser instrument life and obtain further improvement and the high power semiconductor laser of the facula plastic of improving of being convenient for.
The utility model discloses a following technical scheme realizes:
the high-power semiconductor laser convenient for shaping light spots comprises a laser chip, a base heat sink, a transition heat sink and electrodes, wherein the laser chip is welded on the transition heat sink, the transition heat sink is arranged in the middle above the base heat sink, overflow grooves are formed in the positions, located on the two sides of the transition heat sink, of the base heat sink, and the laser chip is led out to the electrodes through gold threads.
Further, the transition heat sink is optically processed graphene.
Furthermore, the electrodes are positive and negative ceramic electrodes, the positive ceramic electrode and the negative ceramic electrode are arranged on two sides of the substrate heat sink, the laser chip is led out to the electrodes through gold wires, and the positive ceramic electrode and the negative ceramic electrode are L type.
Furthermore, the negative electrode of the electrode is a ceramic electrode and is arranged on one side above the substrate heat sink; the negative electrode is arranged at one corner below the substrate heat sink.
Further, a mounting hole is formed below the substrate in a hot sinking mode.
Further, the solder used to solder the laser chip to the submount is a gold-tin solder tab.
Furthermore, the solder between the ceramic electrode and the substrate heat sink is low-temperature soft solder.
Further, the surface of the ceramic electrode is plated with nickel.
The utility model has the advantages that:
1. small volume, simple structure, easy manufacture and high performance reliability.
2. The ceramic electrode and the substrate heat sink form good insulation.
3. The laser module is convenient for fast axis collimation and spot shaping.
Drawings
Fig. 1 is a top view of a schematic diagram of a high power semiconductor laser that facilitates spot shaping in accordance with the present invention;
fig. 2 is a side view of a schematic structural diagram of a high power semiconductor laser that facilitates spot shaping in accordance with the present invention;
fig. 3 is a schematic structural view of a semiconductor laser of embodiment 2.
In the figure: 1. a laser chip; 2. graphene; 3. an overflow trough; 4. a negative ceramic electrode; 5. a positive ceramic electrode; 6. gold thread; 7. mounting holes; 8. a base heat sink.
Detailed Description
The technical solution is explained by referring to fig. 1 to 2, in this embodiment 1, a high power semiconductor laser convenient for spot shaping includes a laser chip 1 and a transition heat sink optically processed graphene 2, the laser chip 1 is soldered to the transition heat sink optically processed graphene 2 by a chip mounter, the solder used is a gold-tin soldering sheet and a base heat sink 8, the base heat sink 8 is made of a heat conducting metal material, two overflow grooves 3 are formed on the surface of the base heat sink 8, the overflow grooves 3 prevent the overflow of the excessive solder when the solder is melted, so as to avoid the solder from forming a protruding solder ball, the transition heat sink optically processed graphene 2, a negative ceramic electrode 4 and a positive ceramic electrode 5 are placed into a vacuum reflow soldering furnace by a design fixture and soldered to the base heat sink 8, the solder used is a low temperature soft solder, the ceramic electrode 4 and the ceramic electrode 5 are intermediate ceramic, the lower surface of the ceramic is plated with nickel, the upper surface of the ceramic is integrated with a copper electrode, the ceramic electrode 4, the ceramic electrode 5 and the substrate heat sink 8 are insulated, the gold wire 6 is bonded and connected with the negative electrode of the laser chip 1 to the graphene through a gold wire bonder, the gold wire is connected with the negative ceramic electrode 4 to lead out a negative electrode, then the gold wire is connected with the positive ceramic electrode 5 to lead out a positive electrode, and the mounting hole 7 is fixed on a device.
The transition heat sink material in the embodiment is the optically processed graphene 2, the optically processed graphene 2 has high thermal conductivity and is beneficial to heat dissipation, the laser chip 1 and the optically processed graphene 2 are convenient to weld, the laser chip has good insulation with the substrate heat sink 8, the thermal expansion coefficient of the optically processed graphene 2 is close to that of the chip, the deformation is small, and the reliability of the laser is high; the ceramic electrode and the substrate heat sink form good insulativity; meanwhile, the overflow groove on the heat sink of the substrate has a good limiting effect.
As shown in fig. 3, in example 2, only one electrode is welded as a negative electrode, and the negative electrode of the electrode is a ceramic electrode and is disposed on one side above the base heat sink; the negative electrode is arranged at one corner below the substrate heat sink. The rest is the same as example 1.
The semiconductor laser solves the safety problem and other power-on installation problems of the heat sink electric conduction of the semiconductor laser with chip packaging and other C-mount packaging structures, the chip of the semiconductor laser is welded to a transition heat sink, the transition heat sink and ceramic electrodes on two sides are welded to a base heat sink, the electrodes on two sides of gold wire bonding lead out positive and negative electrodes, the graphene optically processed by the transition heat sink plays a role in heat conduction and insulation, the ceramic electrodes on two sides are insulated from the heat sink, and the base heat sink is provided with a mounting hole, so that the formed semiconductor laser packaging structure is simple, good in heat dissipation and long in service life, and high-quality light spot output is realized.
Claims (8)
1. The high-power semiconductor laser convenient for spot shaping is characterized by comprising a laser chip, a base heat sink, a transition heat sink and electrodes, wherein the laser chip is welded on the transition heat sink, the transition heat sink is arranged in the middle above the base heat sink, overflow grooves are formed in the positions, located on the two sides of the transition heat sink, of the base heat sink, and the laser chip is led out to the electrodes through gold threads.
2. The high power semiconductor laser for facilitating spot shaping as claimed in claim 1 wherein the submount is optically processed graphene.
3. The high power semiconductor laser for spot shaping as claimed in claim 1, wherein the electrodes are positive and negative ceramic electrodes, the positive and negative ceramic electrodes are disposed on two sides of the substrate heat sink, the laser chip is led out to the electrodes by gold wires, and the positive and negative ceramic electrodes are L type.
4. The high power semiconductor laser for facilitating spot shaping as claimed in claim 1 wherein the negative electrode of the electrode is a ceramic electrode disposed on the upper side of the base heat sink; the negative electrode is arranged at one corner below the substrate heat sink.
5. A high power semiconductor laser for facilitating spot shaping as claimed in claim 2 or 3 or 4 wherein the substrate is provided with mounting holes under a thermal sink.
6. The high power semiconductor laser for facilitating spot shaping as claimed in claim 5 wherein the solder used to solder the laser chip to the submount is a gold-tin solder pad.
7. The high power semiconductor laser for facilitating spot shaping as claimed in claim 6 wherein the solder between the ceramic electrode and the base heat sink is a low temperature soft solder.
8. The high power semiconductor laser for facilitating spot shaping as claimed in claim 7 wherein the surface of said ceramic electrode is nickel plated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922294886.6U CN211151047U (en) | 2019-12-19 | 2019-12-19 | High-power semiconductor laser convenient for spot shaping |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201922294886.6U CN211151047U (en) | 2019-12-19 | 2019-12-19 | High-power semiconductor laser convenient for spot shaping |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN211151047U true CN211151047U (en) | 2020-07-31 |
Family
ID=71751103
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201922294886.6U Active CN211151047U (en) | 2019-12-19 | 2019-12-19 | High-power semiconductor laser convenient for spot shaping |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN211151047U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113471808A (en) * | 2021-06-30 | 2021-10-01 | 青岛镭创光电技术有限公司 | Packaging heat sink, semiconductor laser and semiconductor laser module |
-
2019
- 2019-12-19 CN CN201922294886.6U patent/CN211151047U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113471808A (en) * | 2021-06-30 | 2021-10-01 | 青岛镭创光电技术有限公司 | Packaging heat sink, semiconductor laser and semiconductor laser module |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11139278B2 (en) | Low parasitic inductance power module and double-faced heat-dissipation low parasitic inductance power module | |
| CN102034925B (en) | Flat FCB (Flip Chip Bonding) GaN-based LED (Light-Emitting Diode) chip structure | |
| CN105655306A (en) | Double-side welding and single-side heat radiation power module integrated on heat radiation substrate | |
| CN202759153U (en) | High-thermal-load large-power semiconductor laser | |
| JP2017159335A (en) | Semiconductor device and manufacturing method of the same | |
| CN211151047U (en) | High-power semiconductor laser convenient for spot shaping | |
| WO2022127060A1 (en) | Power device packaging structure and power electronic device | |
| CN113659427B (en) | Semiconductor laser packaging structure and packaging method | |
| CN210577011U (en) | Semiconductor laser single-tube module | |
| CN205429001U (en) | LEDCOB light source packaging structure | |
| CN103247742B (en) | A kind of LED heat radiation substrate and manufacture method thereof | |
| CN115188722A (en) | Structure for packaging semiconductor chip | |
| CN201069771Y (en) | Mounting type LED | |
| CN209912892U (en) | COB light source | |
| CN211238808U (en) | Semiconductor laser with heat radiation module | |
| CN112736042A (en) | Double-sided water-cooled power module | |
| CN212380421U (en) | Vertical LED chip packaging structure | |
| CN205335297U (en) | Integrate LED light source heat conduction structure | |
| CN216413061U (en) | Intelligent power module with strong heat dissipation | |
| CN210516747U (en) | DPC ceramic composite substrate structure with high thermal conductivity | |
| CN201038190Y (en) | LED package structure | |
| CN213816144U (en) | IGBT power module | |
| CN213212151U (en) | Semiconductor packaging structure | |
| CN212517189U (en) | Novel common cathode diode packaging structure | |
| CN216871955U (en) | Power module using copper wire bonding |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant |